INVITED SPEAKERS

CORE AREAS

Area 1

Advanced LSI Processing & Materials Science

from 13:30 on 9/28/2011, 11F Room No. 1102
"Investigation of the Electrical Properties of Ge/High-k Gate Stack"
J. Mitard (IMEC, Belgium)

from 15:45 on 9/28/2011, 11F Room No. 1102
"In depth characterization of electrical effects of dopants (Al, La, Mg, N) in high-k/metal gate stacks"
G. Reimbold (CEA LETI, France)

from 13:35 on 9/30/2011, 11F Room No. 1102
"Challenges for High-k/III-V CMOS: Interfacial Chemistry, Defects, and Fermi Level Pinning"
R. M. Wallace (Texas Univ., USA)

from 15:25 on 9/29/2011, 11F Room No. 1102
"Challenges to Strained Source/Drain and Advanced Silicide for High Performance Transistors"
T. Yamaguchi (Renesas Electronics Corp., Japan)

Area 2

Advanced Interconnect / Materials Technology and Characterization

from 11:15 on 9/30/2011, 12F Room No. 1201
"Optical Interconnection based on Silicon photonics"
S. Itabashi (NTT Microsystem Integration Laboratories, Japan)

from 13:30 on 9/28/2011, 10F Room No. 1003
"TSV and Cu-Cu direct bonding: two key technologies for High Density 3D"
N. Sillon (CEA/LETI, France)

from 14:00 on 9/30/2011, 10F Room No. 1003
"Low temperature curable nano-inks for printed wiring and transparent films"
K. Suganuma (Osaka University, Japan)

from 15:25 on 9/29/2011, 10F Room No. 1003
"1X nm Copper and Low-k reliability "
Z. Tokei (IMEC, Belgium)

Area 3

CMOS Devices / Device Physics

from 11:15 on 9/30/2011, 11F Room No. 1101
"Extremely Thin SOI (ETSOI) - a Planar CMOS technology for System-on-chip Applications"
K. Cheng (IBM, USA)

from 14:00 on 9/30/2011, 11F Room No. 1101
"A Consistent Modeling Framework to Explain Negative Bias Temperature Instability (NBTI) DC Stress, Recovery and AC Experiments"
S. Mahapatra (IIT Bombay, India)

from 9:00 on 9/30/2011, 11F Room No. 1101
"Advanced Foundry CMOS: From Planar into the Multi-Gate Era"
A. Wei (GlobalFoundries, USA)

Area 4

Advanced Memory Technology

from 11:15 on 9/30/2011, 11F Room No. 1103
"Current Status and Future Challenges of Resistive Switching Memories"
W. C. Chien (Macronix International Co., Ltd., Taiwan)

from 13:30 on 9/28/2011, 11F Room No. 1103
"Magnetoresistive Random Access Memory with Spin Transfer Torque Write (Spin RAM) - Present and Future -"
H. Ohno (Tohoku University, Japan)

from 9:00 on 9/30/2011, 11F Room No. 1103
"Entropy-controlled Phase-change Memory"
J. Tominaga (AIST, Japan)

from 15:40 on 9/28/2011, 11F Room No. 1103
"An Overview of Embedded Ferroelectric Memory Technology"
K. R. Udayakumar (Texas Instruments Inc., USA)

Area 5

Advanced Circuits and Systems

from 15:25 on 9/29/2011, 11F Room No. 1104
"Challenges and Trends of Resistive Memory (Memristor) Based Circuits for 3D-IC Applications "
M. F. Chang (National Tsing Hua University, Taiwan)

from 13:30 on 9/28/2011, 11F Room No. 1104
"High Speed Vision for Gesture UI, Dynamic Image Control and Visual Feedback"
M. Ishikawa (University of Tokyo, Japan)

from 14:40 on 9/28/2011, 11F Room No. 1104
"RF MEMS Switch Technology in OMRON"
T. Seki (OMRON Corp., Japan)

Area 6

Compound Semiconductor Electron Devices and Related Technologies

from 9:00 on 9/30/2011, 5F Hall 1
"High-Voltage SiC Power Devices for Energy Electronics"
T. Kimoto (Kyoto Univ., Japan)

from 13:30 on 9/28/2011, 5F Hall 1
"InAlN/GaN HEMTs: Recent Progress and Challenges for the Future"
J. Kuzmik (Slovak Academy of Sciences, Slovakia)

from 15:40 on 9/28/2011, 5F Hall 1
"Extending the Bandwidth and Functionality of High Performance InP HBT Technologies"
M. Urteaga (Teledyne Scientific Company, USA)

Area 7

Photonic Devices and Optoelectronic Integration

from 13:30 on 9/28/2011, 12F Room No. 1201
"Lens-integrated surface-emitting DFB laser arrays for short-reach optical links"
K. Adachi (Hitachi, Ltd., Central Research Laboratory, Japan)

from 9:00 on 9/29/2011, 12F Room No. 1201
"Plasmonic Nanophotonic Structures for Future Communications and Energy Applications"
H. A. Atwater (Caltech, USA)

from 15:40 on 9/28/2011, 12F Room No. 1201
"Photonic Crystal Devices Fabricated by CMOS-Compatible Process"
T. Baba (Yokohama National University, Japan)

from 9:30 on 9/30/2011, 12F Room No. 1201
"High Speed Optoelectronic Devices in Silicon"
L. Vivien (University of Paris Sud , France)

from 9:00 on 9/30/2011, 12F Room No. 1201
"Silicon Photoniics in Next Generation Computers"
M. R. Watts (MIT, USA)

Area 8

Advanced Material Synthesis and Crystal Growth Technology

from 13:30 on 9/28/2011, 12F Room No. 1207
"Progress in Nonpolar and Semipolar GaN Materials and Devices"
J. S. Speck (Univ. of California. Santa Barbara, USA)

from 15:40 on 9/28/2011, 12F Room No. 1207
"Multi-dimensional Nanostructured Oxide Devices"
H. Tanaka (Osaka Univ., Japan)

from 9:00 on 9/30/2011, 5F Hall 2
"Formation of graphene nanostructures on vicinal SiC surfaces"
S. Tanaka (Kyushu Univ., Japan)

from 9:00 on 9/29/2011, 12F Room No. 1207
"Morphological and compositional interface stability of metastable ternary and quaternary (Ga,In)(As,Sb) quantum wells"
A. Trampert (Paul Drude Institute, Germany)

from 17:05 on 9/29/2011, 5F Hall 2
"Epitaxial metal nanocrystal-semiconductor quantum dot plasmonic nanostructures"
A. Urbanczyk (Eindhoven University of Technology, Netherlands)

Area 9

Physics and Application of Novel Functional Devices and Materials

from 9:00 on 9/29/2011, 12F Room No. 1202
"Electronic transport in graphene nanostructures"
T. Ihn (ETH Zurich, Switzerland)

from 14:00 on 9/30/2011, 12F Room No. 1202
"Atomic Physics and Quantum Optics using Superconducting Qubits."
F. Nori (RIKEN, Japan)

from 9:30 on 9/30/2011, 12F Room No. 1202
"Imaging of Spin Polarized Quantum Hall Current in GaAs Quantum Well by Scanning Kerr Microscope"
K. Oto (Chiba University, Japan)

from 9:00 on 9/30/2011, 12F Room No. 1202
"Acoustic transport and manipulation of carriers and spins in GaAs."
P. V. Santos (Paul Drude Institute, Germany)

Area 10

Organic Materials Science, Device Physics, and Applications

from 15:25 on 9/29/2011, 10F Room No. 1002
"Organic resistive memory device composed of hyperbranched polystyrene and gold nanoparticles"
K. Fujita (Kyushu Univ., Japan)

from 9:00 on 9/30/2011, 10F Room No. 1002
"Device Physics of Organic Transistors"
T. Hasegawa (AIST, Japan)

from 14:00 on 9/30/2011, 10F Room No. 1002
"Flexible organic transistor memory devices"
J. S. Lee (School of Advanced Materials Engineering, Kookmin University, Korea)

from 15:40 on 9/28/2011, 10F Room No. 1002
"Nanotransfer Direct Printing Methods"
M. M. Sung (Hanyang Univ., Korea)