INVITED SPEAKERS
CORE AREAS
Area 1
Advanced Si Processing & Materials Science
“Defect-Free GOI (Ge on Insulator) by SiGe Mixing-Triggered Liquid-Phase Epitaxy”
M. Miyao (Kyushu Univ., Japan)
“Atomic mechanism of Flat band voltage shifts by Oxide dipole Layers in High K-Metal Gate Stacks”
J. Robertson (Cambridge Univ., UK)
“Overview and Challenges in Source/Drain Formation Technology in High Performance Transistors.”
K. Suguro (Toshiba Corp., Japan)
“High-k/Metal Gate Technology for 22nm Generation and Beyond”
M. Takayanagi (Toshiba America Electronic Components, Inc., USA)
“Dopant/carrier profiling in nanostructures.”
W. Vandervorst (IMEC, Belgium)
Area 2
Advanced Interconnect /3-D Integration Science
“Thermal Transport in Graphene and Few-Layer Graphene: Applications in Thermal Management”
A. A. Balandin (Univ. of California, USA)
“3D Integration Technology and 3D System-on- a Chip”
M. Koyanagi (Tohoku Univ., Japan)
“Cu Alloys and Noble Metal Liner Materials to Extend Damascene Copper Interconnect Schemes”
T. Nogami (IBM, USA)
“Advanced organic polymers for the aggressive scaling of low-k materials”
M. Pantouvaki (IMEC, Belgium)
“Low temperature bonding for 3D integration”
T. Suga (Univ. of Tokyo, Japan)
“Electromigration Void Dynamics in Copper-Based Interconnects”
C. V. Thompson (MIT, USA)
Area 3
CMOS Devices / Device Physics
“Extremely-Thin SOI (ETSOI) for Mainstream CMOS:Challenges and Opportunities”
Ali Khakifirooz (IBM, USA)
“Tunnel FET Promise and Challenges”
Tsu-Jae King Liu (Univ. of California at Berkeley, USA)
“CVD Graphene for High Speed Electronics”
J. C. S. Woo (UCLA, USA)
Area 4
Advanced Memory Technology
“Overview and Future Challenge of Hafnium Oxide ReRAM”
Yu-Sheng Chen (ITRI, Taiwan)
“Current Status and Future Challenge of Embedded High-speed MRAM”
S. Fukami (NEC Corp., Japan)
“Current Development Status and Future Challenges of FeRAM”
Y. Fujimori (ROHM Co., Ltd., Japan)
“A Survey of Cross Point Phase Change Memory Technologies”
DerChang Kau (Intel Corp., USA)
“Current Development Status and Future Challenges of Charge-Trapping NAND Flash”
Hang-Ting Lue (Macronix Int'l Co., Ltd., Taiwan)
“Current Status and Future Challenge of Fe-NAND/SRAM Cell Technology”
K. Takeuchi (Univ. of Tokyo, Japan)
Area 5
Advanced Circuits and Systems
“CMOS High–Speed Image Sensors –Pixel Devices, Circuits and Architectures–”
S. Kawahito (Shizuoka Univ., Japan)
“Integrated CMOS-MEMS Technology and its Application.”
K. Machida (NTT-AT, Japan)
“Evolutions of Transceiver Architectures toward Software-Defined and Cognitive Radios “
T. Tsukahara (Univ. of Aizu, Japan)
“A Practical Modeling Solution for the Nanodevices with Strain Engineering”
C. S. Yeh (UMC, Taiwan)
Area 6
Compound Semiconductor Electron Devices and Related Technologies
“GaN Based Power Devices:A New Era in Power Electronics “
M. A. Briere (International Rectifier, USA)
“SiC Power devices-Recent Progress and upcoming challenges”
P. Friedrichs (SiCED, Germany)
“Adding Value to CMOS through Heterogeneous Integration”
Y. Royter (HRL Laboratories, LLC, USA)
“Terahertz Oscillating InGaAs/AlAs Resonant Tunneling Diode”
S. Suzuki (Tokyo Tech, Japan)
“Integration Technologies for GaN Power Transistors”
T. Ueda (Panasonic Corp., Japan )
Area 7
Photonic Devices and Optoelectronic Integration
“Membrane-type photonic devices for optical circuits on SOI”
S. Arai (Tokyo Tech, Japan)
“Nanophotonic On-Chip Interconnection Networks for Energy-Performance Optimized Computing”
K. Bergman(Columbia Univ. , USA)
“Information processing and sensing with photonic crystal microcavities in SOI”
P. M. Fauchet (Univ. of Rochester, USA)
“ Roadmap of ultrafast energy-saving optical semiconductor devices to Year 2025”
Y. Ueno (Univ. of Electro-Communications, Japan )
Area 8
Advanced Material Synthesis and Crystal Growth Technology
“Towards Industrial Applications of Graphene Electrodes”
B. H. Hong (Sungkyunkwan Univ., Korea)
“Let us update the present status of research on magnetic semiconductors”
H. Munekata, (Tokyo Tech, Japan)
“Quantum Dot Superlattice for High Efficiency Intermediate Band Solar Cell”
Y. Okada (Univ. of Tokyo, Japan)
“Droplet elimination process by radical beam irradiation for the growth of InN-based III-nitrides and its application to device structure”
T. Yamaguchi (Ritsumeikan Univ., Japan)
Area 9
Physics and Application of Novel Functional Devices and Materials
“Silicon Quantum Dots and Donors for Quantum Information Processing”
A. S. Dzurak (Univ. of New South Wales, Australia )
“Quantum media conversion from a photon to an electron spin”
H. Kosaka (Tohoku Univ., Japan)
“STS Observations of Topological Dirac Fermion on Graphite Surafaces”
T. Matsui (Univ. of Tokyo, Japan)
“Electronic Transport Properties in Graphene Nanoribbons and Junctions”
K. Wakabayashi (NIMS, Japan)
Area 10
Organic Materials Science, Device Physics, and Applications
“Materials and Processes for Air-Stable n-Channel Organic Transistors”
Z. Bao (Stanford Univ., USA)
“Electronic Structures and Electric Properties of Rubrene Single Crystal Studied By Photoemission, Time-of-Flight, and Displacement Current Measurements”
H. Ishii (Chiba Univ., Japan)
“Ink-jet Printing of Organic Thin-Film Transistors”
T. Kawase (Seiko Epson Corp., Japan)
“Non-Volatile Molecular Memory nano-interfaced with organic molecules”
H. Lee (Sungkyunkwan Univ., Korea)
“Non-Contact Measurement of Charge Carrier Mobility in Inorganic and
Organic Semiconductor Materials”
S. Seki (Osaka Univ., Japan)
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