CALL FOR PAPERS     - Summary,Plenary Talk, and Area scope -

This session focuses on micro/nano electromechanical systems(MEMS/NEMS) and their applications, such as biosensors. Bio-M/NEMS devices and bio-sensors are widely applied to biochemical, medical, and environmental fields in which many devices are studied, such as biochips, micro-TAS, lab on a chip, etc. Interdisciplinary research of microelectronic devices with materials and technique in the chemical, biological, and medical fields is expected to open the door to new scientific and business fields. Papers are solicited in the following areas (but are not limited to these areas): (1) micro/nano electromechanical systems (M/NEMS) for RF, optical, power and biomaterial fields, and others; (2) micro-TAS and lab on a chip; (3) various biochips and sensors;(4) fabrication technologies and surface/interface modification techniques, such as SAM for micro-TAS and/or biochips; and (5) new integrated micro/nanosystems for biochemical and medical applications.

Invited Speakers: “Microelectronics for Bio Sensor”

S. Banerjee (Univ. of Texas at Austin, USA)

“Fabrication of 3-dimensional Structure by Nanoimprint Process”

Y. Hirai (Osaka Prefecture Univ., Japan)

“To be announced”

T. Urisu (Inst. of Molecular Science, Japan)

Further invited speakers will be added.

This field covers spintronic materials (metals, semiconductors, insulators, hybrid structures, and nanostructures), spin-related phenomena, and device applications. Papers are solicited in the following areas(but are not limited to these areas): (1) ferromagnetic and/or half-metallic materials; (2) hybrid structures and nanostructures in which spin effects are apparent and important; (3) spin-dependent optical and transport phenomena; (4) spin dynamics; (5) spintronics devices and systems including magnetic tunnel junctions and TMR devices, nonvolatile memory, magnetic sensors, spin-transistors, optical isolators, optical switches etc;(6) quantum information processing using spin states.

Invited Speakers: “Spin Transfer Switching in MTJs for MRAM”

Y. Huai (Grandis Inc., USA)

“Giant TMR in CoFeB/MgO/CoFeB Magnetic Tunnel Junctions” (tentative)

S. Ikeda (Tohoku Univ., Japan)

“Giant TMR and Future Nonvolatile Memory”

S. S. P. Parkin (IBM Almaden, USA)

“Structural Study on CoFeB/MgO/CoFeB Magnetic Tunnel Junctions”

K. Tsunekawa (Canon ANELVA, Japan)

Further invited speakers will be added.