CALL FOR PAPERS     - Summary,Plenary Talk, and Area scope -

The scope of this subcommittee covers all aspects of emerging technologies in active, passive, and integrated optoelectronic and photonic devices as well as device physics, which include: (1) laser diodes, LEDs, photodetectors, SOAs, and OEICs; (2) quantum nanostructure optical devices including quantum wells, quantum wires, or quantum dots; (3) photonic crystal materials and novel functional devices; (4) optical switches, modulators, and MEMS; (5) optical wavelength converters, nonlinear optical devices, and all-optical switches; (6) waveguide components, PLCs and integrated photonic circuits; (7) material and device processing and characterization techniques; (8) hybrid and monolithic integration, packaging and moduling; (9) optical communication, interconnection and signal processing applications of optoelectronic and photonic devices;(10) linear and nonlinear optical properties, electronic band structures, and the relaxation mechanism of quantum nanostructures; and (11) novel phenomena and applications including slow light, fast light, optical memory, and optoelectronic tweezers, A special session focused on “Photonic crystals and Si nano-photonics” is scheduled to highlight this area through their concept, design, fabrication processes, and devices.

Invited Speakers: “High-speed Quantum-dot Lasers”

P. Bhattacharya (Univ. of Michigan, USA)

“GaN-based High-speed Intersubband Optical Switches”

N. Iizuka and N. Suzuki (Toshiba, Japan)

“MOCVD Growth of Quantum-dot Optical Devices”

K. Kawaguchi (Fujitsu Labs., Japan)

“Quantum Confined Ultra-Thin Silicon Light-Emitting Transistor for On-Chip Optical Interconnection”

S. Saito (Hitachi, Japan)

“Nanophotonic Technologies for PC-SMZ-based Alloptical Flip-flop Switch : PC-FF”

Y. Sugimoto1,2 and K. Asakawa2(1NIMS, 2Univ. of Tsukuba, Japan)

“High-speed Wavelength Tunable Lasers”

S. Tsuji (Hitachi, Japan)

Further invited speakers will be added.

The scope of this subcommittee covers all kinds of synthesis, growth, and fabrication techniques of not only semiconducting but also novel functional materials and structures, nitride compounds, carbon nanotubes, nanowires and nanoparticles, etc. The principle idea is to enhance mutual communication among people in different committees to share knowledge of commonly important key technologies in fabrication processes. Specific scopes are, but not limited to, the following: (1) novel material systems and structures; (2) nitride-related compound semiconductors; (3) novel synthesis, growth, and fabrication techniques; (4) carbon nanotubes;(5) nanowires and nanoparticles; (6) microscale and nanoscale 3-D structures; (7) characterization of fundamental properties.

Invited Speakers: “InAs/In(Ga,Al)AsSb Quantum Dot Heterostructures for Photonic Devices”

J. -I. Chyi (NCU, Taiwan)

“Present Status and Future Issues of III-V Semiconductor Nanowires”

K. Hiruma (ASET, Japan)

“Bottom-up Approach for the Nanopatterning of Si(001)”

R. Koch (Johannes Kepler Univ., Austria)

“In Situ X-ray Diffraction during Semiconductor Nanostructure Growth”

M. Takahashi (Japan Atomic Energy Agency, Japan)