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CALL FOR PAPERS - Summary,Plenary Talk, and Area scope -
Area 5
Advanced Circuits and Systems |
| (Chair: H. Kobayashi, Gunma Univ.) |
Original papers bridging the gap between materials, devices, circuits, and systems in Si-ULSI, including SiGe, are solicited in subject areas that include, but not limited to the following: (1) advanced digital, analog, mixed-signal circuits as well as memory; (2) high-speed and highfrequency circuits; (3) wireless, wireline, and optical communication circuits; (4) power devices and circuits as well as power management technology; (5) interconnection design for communication inside a chip as well as among chips; (6) technologies for systems on a chip (SoC) and system in a package (SiP); and (7) LSI testing technology;(8) three dimensional IC technology; (9) MEMS (passive)devices as well as circuits, RF MEMS; (10) sensor devices and circuits; (11) thin film transistors and circuits;(12) organic transistors and circuits. A special session focused on RF CMOS devices and circuits is scheduled to highlight this area.
Invited Speakers:
“Accurate Process Sensitivity Models based DFM Flows” |
| C. Guardiani (PDF Solutions, Italy) |
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| “History of DLP Technology” |
| P. V. Kessel (Texas Instruments, USA) |
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| “Error Correction and Calibration Technology for RF Circuits and Systems” |
| A. Matsuzawa (Tokyo Tech., Japan) |
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| “RF CMOS Modeling” |
| T. Ooguro (Toshiba, Japan) |
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| “RF CMOS Circuits ?Overview and Perspective?” |
| T. Tsukahara (Aizu Univ., Japan) |
Area 6
Compound Semiconductor Circuits, Electron Devices and Device Physics |
| (Chair: M. Kuzuhara, Univ. of Fukui ) |
This session covers all aspects of advanced electron device and IC technologies based on compound semiconductors, including III-V, III-N, SiC, and other materials. Papers are solicited in the following areas:(1) FETs, HFETs, HBTs, and other novel device structures; (2) high-voltage or high-temperature electron devices and circuits; (3) microwave and millimeter-wave amplifiers, oscillators, switches, and other ICs; (4) highspeed digital ICs and mixed-signal ICs; (5) theory and physics of electron devices; (6) characterization techniques for devices and ICs; (7) innovative device processing and packaging; (8) reliability issues; and(9) novel applications utilizing compound semiconductor devices and circuits. Contributions related to other interesting topics are also welcome.
Invited Speakers:
“Next Generation High-Efficiency RF Transmitter Technology for Basestations” |
| P. M. Asbeck (UCSD, USA) |
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| “Growth of InAs Channel HEMT Structure on Si Substrate and its Possible Application for Low Power Logic” |
| E. Y. Chang (National Chiao Tung Univ., Taiwan) |
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| “Microwave Class-F Power Amplifiers Using GaN HEMTs” |
| K. Honjo (Univ. of Electro-Communications, Japan) |
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| “Parasitic Effects and Reliability Issues on GaN based HEMTs” |
| G. Meneghesso (Univ. of Padova, Italy) |
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| “GaN HEMT Transistors and MMICs: Technology Status and Applications” |
| P. Parikh (Cree Santa Barbara, USA) |
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