SCOPE

CORE AREAS

Area 1

Advanced LSI Processing & Materials Science
(Chair: T. Nabatame, NIMS)

This area covers all the innovative front-end-of-line process technologies and material sciences for advanced LSI devices. Not only the gate stack technology but all the novel front-end process technologies are welcome. Papers are solicited in the following areas (but are not limited to these areas): (1) advanced gate stack technologies, such as ultrathin dielectrics, high-k dielectrics, metal gates, high-mobility channel materials like Ge and III-V, three-dimensional channel, and the device integration with these technologies; (2) front-end process technologies that break-through the scaling limit, such as shallow and conformal junction formation, novel diffusion/oxidation, high-precision dry/wet etching fabrication techniques of three-dimensional structures, and highly controlled surface preparation techniques for nano-scale fabrication; (3) reliability physics and analysis; and (4) material characterization and modeling for LSI processes.

Area 2

Advanced Interconnect / Interconnect Materials and Characterization
(Chair: S. Ogawa, AIST)

Technologies and sciences that cover advanced interconnect / interconnect materials, so-called back-end-of-line (BEOL) devices / processes, and related characterizations are discussed. This area requires new innovations in the material, process, device structure, and characterization fields. Papers are solicited in the following areas, but not limited.: (1) Cu / low-k and packaging technologies; (2) passive components for RF or high-speed operations; (3) structures and materials for new interconnects, such as a TSV / micro-bump for 3-D integration, a carbon based interconnect, an optical interconnect, and BEOL-based memory applications; (4) future applications to or from printable, organic, bio materials and devices including contact formation; (5) characterization technologies for materials, mechanical and electrical properties, metrology, and yield improvement; (6) reliability phenomena, and their physics. Joint sessions with related areas may be organized.

Area 3

CMOS Devices / Device Physics
(Chair: D. Hisamoto, Hitachi)

This area focuses on CMOS device technologies and physics for advanced ULSIs. Papers are solicited in the following areas: (1) advanced silicon CMOS devices and their integration technologies; (2) performance-booster technologies such as high-mobility channels including strained-Si , SiGe, Ge and III-V’s; (3) device architectures such as a planar SOI, FinFET, multi-channels, nano-wires and their parasitic characteristics; (4) device physics of not only advanced CMOS but also emerging transistors, such as a tunneling FET and steep subthreshold swing transistor including modeling and simulation on carrier transport; (5) reliability-assessment technologies including HC, NBTI and RTN; (6) circuit-design interaction including modeling of devices; and (7) manufacturing and yield sciences in conjunction with the increasing variability of device parameters, due to random and systematic variations.

Area 4

Advanced Memory Technology
(Chair: M. Moniwa , Renesas Electronics Corp.)

Advanced memory technologies are very much expected to explosively evolve digital information technologies including Cloud-Computing toward "high speed, low power, high density, broadband and mobile." Papers are solicited in the area of all advanced volatile and nonvolatile memory devices, such as DRAM, flash (including SONOS and nanocrystal devices), FeRAM, MRAM (STT type MRAM: STT-RAM, Domain Wall type MRAM etc.), PRAM (phase change memories), ReRAM (resistive memories of transition metal oxide or perovskite oxide, ion-plug memory, and conductive bridge memory, etc.), one time programming memory, 3D memory, organic memory, probing memory and others. Also, newly evolving memory-function-related circuit elements, such as nonvolatile-logic with MTJ, are welcome. Topics include memory-cell-device physics, performance improvement and characterization, process integration and materials, tunneling dielectrics, ferroelectric and ferromagnetic materials, reliability, failure analysis, quality assurance and testing, modeling and simulation, process control and yield enhancement, integrated circuits, new concept memories, and new applications and systems (solid state disks, memory cards, programmable logic, etc.).

Area 5

Advanced Circuits and Systems
(Chair: T. Koide, Hiroshima Univ.)

Original papers bridging the gap between materials, devices, circuits, and systems in ULSI are solicited in subject areas that include, but not limited to the following:
(1) advanced digital, analog, and mixed-signal circuits as well as memory; (2) high-speed and high-frequency circuits for wireless, wireline, and optical communication; (3) technologies for systems on a chip (SoC) and system in a package (SiP), including three-dimensional IC technology and intra/inter-chip interface design; (4) device, interconnect and circuits modeling for heterogeneous integration; (5) interface circuits and systems for sensor devices; (6) circuits and systems for MEMS devices as well as RF MEMS; (7) heterogeneous integration circuits for nano/bio sensors and MEMS; (8) advanced interconnect technologies for body area network as well as wearable computer; (9) circuit technologies for emerging devices as well as thin film transistors, micro/nano devices, and organic devices.
Some topics for MEMS are closely related in Area11, so a joint session with Area 5 and Area 11 will be planned at the conference.

Area 6

Compound Semiconductor Electron Devices and Related Technologies
(Chair: Y. Miyamoto, Tokyo Tech)

This session covers all aspects of advanced electron device and IC technologies based on compound semiconductors, including III-V, III-N, SiC, oxide semiconductors and other materials. Papers are solicited in the following areas: (1) FETs, HFETs, HEMTs, HBTs, and other novel device structures; (2) high-voltage or high-temperature electron devices; (3) Discrete devices and ICs for microwave and millimeter-wave applications; (4) high-speed digital ICs; (5) advanced sensor devices; (6) transparent thin film transistors; (7) theory and physics of electron devices; (8) processing and characterization techniques for devices and ICs; (9) stability and reliability issues; and (10) novel applications utilizing compound semiconductor devices and circuits. In order to strengthen the importance of the power devices in compound semiconductor area, one or more sessions will be jointly organized with Area 14. Contributions related to other interesting topics are also welcome.

Area 7

Photonic Devices and Optoelectronic Integration
(Chair: Y. Tanaka, Fujitsu Labs. Ltd.)

This area covers all aspects of photonic devices, featuring silicon photonics, quantum photonics and solid-state lighting towards creating highly integrated systems of optical telecommunication, optical interconnection and efficient illumination. The topics include but are not limited to: (1) light sources (LDs, LEDs, etc.), optical amplifiers/attenuators and photodetectors (photovoltaic cells); (2) waveguides, waveguide devices, 2D/3D optical wiring, and photonic integrated circuits of any materials; (3) functional optical devices including modulators, switches, memories and any of MEMS devices; (4) optical quantum structures including quantum wells, quantum wires, and quantum dots; (5) photonic and plasmonic structures including photonic crystals, metamaterials, and surface-plasmon antennae; (6) nonlinear signal-processing devices including wavelength converters, all-optical switches; (7) device structures and circuit designs for optoelectronic integration; (8) implementation and packaging of photonic devices; (9) novel phenomena and applications including slow/fast light and optoelectronic tweezers; (10) optical material growth and fabrication process as well as characterization techniques, etc.

Area 8

Advanced Material Synthesis and Crystal Growth Technology
(Chair: H. Hibino, NTT Corp.)

The scope of this area covers all kinds of synthesis, growth, and fabrication techniques of materials and structures including semiconductors, oxides, etc. The principle idea is to foster mutual communication of commonly important key technologies in synthesis processes among people in different fields of materials science. Specific scopes are, but not limited to, the following: (1) novel synthesis, growth, and fabrication techniques; (2) novel material systems; (3) silicon-related materials; (4) III-V compound semiconductors including nitrides; (5) carbon nanomaterials; (6) functional oxides; (7) nanowires and nanoparticles; (8) self-assembly; (9) nanoscale 3D structures; (10) characterization of fundamental properties. Joint sessions with regard to graphene and nanowires will be held in conjunction with Area 9 and Area 13.

Area 9

Physics and Applications of Novel Functional Devices and Materials
(Chair: H. Gotoh, NTT Corp.)

This area covers physics, applications and fabrication techniques of novel functional devices and materials. We strongly encourage novel, pioneering, and fundamental research works that would be influential in various solid state devices of materials (semiconductors, metals, superconductors, magnetic and organic materials, etc.). Specific topics are (1) quantum phenomena in nanostructures; (2) transport and optical characteristics of low-dimensional structures; (3) devices dealing with single electron, hole, exciton, photon, and other quanta; (4) solid-state quantum computing and communications; (5) nanometer-scale characterization with scanning probe techniques; (6) nanofabrication techniques and self-organized phenomena; and (7) other novel functional devices and materials such as tunneling field-effect transistor, micro- and nano-electro-mechanical-systems (MEMS and NEMS), and topological insulators, but are not limited to these subjects. Joint sessions with regard to graphene and nanowires will be held in conjunction with Area 8 and Area 13.

Area 10

Organic Materials Science, Device Physics, and Applications
(Chair: H. Usui, Tokyo Univ. of Agri. & Tech.)

This area covers organic materials, process technology, device physics, characterization, and applications to organic devices. Papers are solicited in the following areas (but are not limited to these areas): (1) organic transistors and circuits; (2) organic light emitting devices; (3) organic diodes, photodetectors, and photovoltaic devices; (4) chemical sensors and gas sensors; (5) molecular electronics; (6) fabrication and characterization of organic thin films; (7) electrical and optical properties of organic thin film and materials; (8) organic-inorganic hybrid systems; and (9) interfacial phenomena, LC devices, EPD devices, etc. A special joint session will be organized for the organic photovoltaics in cooperation with Area 15.