INVITED SPEAKERS

CORE AREAS (TENTATIVE)

Area 1

Advanced LSI Processing & Materials Science

"Ultimate Scaling of High-k Gate Dielectrics: Current Status and Challenges"
T. Ando (IBM T. J. Watson Research Center, USA)

"CMOS Contact Resistance Reduction through Aluminum Profile Engineering"
S. M. Koh (National Univ. of Singapore, Singapore)

"Basic issues on alternative channel materials for Post-Si logic devices: from high mobility semiconductors to two dimensional atomic layers"
A. Molle (IMM-CNR, Italy)

"Raman spectroscopy for strain measurement in state-of-the-art LSI"
A. Ogura (Meiji Univ., Japan)

Area 2

Advanced Interconnect / Interconnect Materials and Characterization

"Silicon photonics transceivers with integrated hybrid lasers"
J. M. Fedeli (CEA, LETI, Minatech, France )

"3D Integration: Applications and Technology"
W. C. Lo (ITRI, Taiwan)

"Challenges in High-Density 3D-integeration"
M. Murugesan (NICHe, Tohoku Univ., Japan)

"Chemical Soldering: New Method for Single Molecular Interconnects"
Y. Okawa (WPI-MANA, NIMS, Japan)

Area 3

CMOS Devices / Device Physics

"Design-friendly scalability of cost-effective 28LP technology platform featuring 2nd generation gate-first HK/MG transistors without eSiGe"
H. Fukutome (Samsung Electronics Co., Ltd., Korea)

"Device architectures and their integration challenges for 1x nm node: FINFETs with high mobility channel"
N. Horiguchi (IMEC, Belgium)

"High-Performance Tri-Gate Silicon Nanowire Transistors for Ultra-Low Power LSI"
M. Saitoh (Toshiba Corp., Japan)

"III-V/Ge Channel MOS Transistor Technologies for Advanced CMOS"
S. Takagi (Univ. of Tokyo, Japan)

Area 4

Advanced Memory Technology

"Resistive Switching in Transition Metal Oxide ReRAM Devices"
B. Magyari-Kope (Stanford Univ., USA)

"Ultra-Low Power Devices by Taking Advantages of Atom Switches with Polymer Solid-electrolyte"
H. Hada (LEAP, Japan)

"Overview and Future Challenge of High Density DRAM for 20nm and beyond"
Y. Hwang (Samsung Electronics Co. Ltd., Korea)

"A Physics-based Model of Resistive Switching in Metal Oxides"
D. Ielmini (Politecnico di Milano, Italy)

"A Process Technology and Characterization for 20nm PRAM"
B. Kim (Samsung Electronics Co. Ltd., Korea)

Area 5

Advanced Circuits and Systems

"Advanced Radiation Image Sensors with SOI Technology"
Y. Arai (KEK, Japan)

"Advanced sensing technology for automobile"
Y. Nonomura (Toyota Central R&D Labs., Japan)

"Low Power SoC integrated circuits design for Wireless Medical and health care applications"
Z. Wang (Tsinghua Univ., China)

“Modeling and simulation of CMOS integrated MEMS: application to low-cost sensors”
P. Nouet (LIRMM, Univ. Montpellier 2, France)

Area 6

Compound Semiconductor Electron Devices and Related Technologies

"InAs High-Electron Mobility Transistors on the Path to THz Operation"
J. A. del Alamo (MIT, USA)

"Sub-Millimeter-Wave GaN-HEMT Technology"
K. Shinohara (HRL Labs., USA)

"III-V 3D Transistors"
P. Ye (Purdue Univ., USA)

"InGaAs MOSFETs with Regrown Source: DC and RF Performance"
L.-E.Wernersson (Lund Univ., Sweden)

"GaN Power Electronics and Applications"
Y. Dora (Transphorm, USA)

Area 7

Photonic Devices and Optoelectronic Integration

"Generic Integration Processes for InP based Application Specific Photonic Integrated Circuits (ASPICs) in Europe: Current Status and future Prospects."
H. P. M. M. Ambrosius(Eindhoven Univ. of Tech., The Netherlands)

"Quantum information device based on NV center in diamond"
N. Mizuochi (Osaka Univ., Japan)

"Plasmonic EM absorbers and photothermal effects"
M. Qiu (Zhejiang Univ., China)

"Ultrafast directly modulated single-mode photonic crystal nanocavity light-emitting diode"
G. Shambat (Stanford Univ., USA,)

"Silicon/Ge/Silica monolithic photonic integration for telecommunications applications."
K. Yamada (NTT Microsystem Integration Labs., Japan)

Area 8

Advanced Material Synthesis and Crystal Growth Technology

"Development of novel piezoelectric materials for Si-based MEMS application"
H. Funakubo (Tokyo Inst. of Tech., Japan)

"Droplet etching: Application to Quantum Dots and Nanopillars for Thermoelectrics"
C. Heyn (Univ. of Hamburg, Germany)

"Interface control of III-oxide/nitride composite structures"
M. Higashiwaki (NICT, Japan)

"Epitaxial Graphene: Synthesis, Integration, and Nanoscale Devices"
J. Robinson (The Pennsylvania State Univ., USA)

Area 9

Physics and Applications of Novel Functional Devices and Materials

"Electrical control of the spin-orbit interaction in a single InAs self-assembled Quantum dot"
R. S. Deacon (Univ. of Tokyo, Japan)

"Multiexciton generation and recombination in semiconductor nanomaterials"
Y. Kanemitsu (Kyoto Univ., Japan)

"Detection of nuclear spin signals from a quantum dot under Kondo effect regime"
M. Kawamura (RIKEN, Japan)

"Strain engineered graphene: current trends and prospects"
V. M. Pereira (National Univ. of Singapore, Singapore)

Area 10

Organic Materials Science, Device Physics, and Applications

"Carbon Materials Nanoengineering for High Performance Optoelectronics"
S. O. Kim (KAIST, Korea)

"Dielectric and photoinduced absorption spectroscopies for characterization of organic photovoltaic devices"
H. Naito (Osaka Prefecture Univ., Japan)

"Magnetoresitance in Organic Materials"
H. Tada (Osaka Univ., Japan)

"Recent development of new organic semiconductors for thin-film transistor applications"
K. Takimiya (Hiroshima Univ., Japan)

"Electrodeposited and Patterned Polymer Thin Films and Devices"
R. C. Adovincula (Case Western Reserve Univ., USA)