INVITED SPEAKERS

STRATEGIC AREAS

Organic Materials Science, Device Physics, and Applications

“Plastic dye-sensitized solar cells and solidification with nano-carbon materials”
T. Miyasaka, Toin Univ. of Yokohama, Japan

“Charge Transport through Molecular Wires and Inorganic Nanowires”
T. Lee, Gwangju Inst. of Sci. and Tech., Korea

“Jet-Printed Polymer Transistor Display Backplanes”
R. Street, Palo Alto Research Center, USA

“Vertical Type Organic Transistors for Flexible Opto-electric Devices”
K. Kudo, Chiba Univ., Japan

Micro/Nano Electromechanical and Bio-Systems (Devices)

“Fabrication of 3-dimensional structure by nanoimprint process”
Y. Hirai, Osaka Prefecture Univ., Japan

“Si based Planer Type Ion-channel Biosensor and Its Applications”
T. Urisu, Inst. for Molecular Sci., Japan

“Bio-Nano Approaches to Fabrication of Quantum Dot Floating Gate Flash Memories”
S. K. Banerjee, Univ. of Texas at Austin, USA

“TH₂ and microwave biochip”
C.K.Suh, National Taiwan Uni. Taiwan

Spintronic Materials and Devices

“Spin Transfer Toique RAM(STT-RAM)Technology”
Y. Huai, Grandis, Inc., USA

“Structural Study on CoFeB/MgO/CoFeB Magnetic Tunnel Junctions”
K. Tsunekawa, Canon ANELVA Corp., Japan

“Giant TMR in CoFeB/MgO/CoFeB Magnetic Tunnel Junctions”
S. Ikeda, Tohoku Univ., Japan

“The Magnetic Racetrack Memory: anovel spintronic device based on the current induced motion of domain walls”
S. S. P. Parkin, IBM, USA

“Spin Injection and Transport in Ferromagnet/semiconductor Structure”
C. J. Palmstrom, Univ. of Minnesota, USA

Applications of Nanotubes and Nanowires

“Nanowires for Nanoscale Electronics, Biosensors and Energy Applications”
S. Meister, Stanford Univ., USA

“III-V semiconductor hetero-structure nanowires by selective area MOVPE”
T. Fukui, Hokkaido Univ., Japan

“Digital Circuits with Carbon Nanotube Transistors”
A. Raychowdhary, Intel Corp., USA

“Advances in Carbon Nanotube Devices and Circuits”
Y. M. Lin, IBM, USA