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SHORT COURSE
Short Courses for young researchers and students, will be held on 24 September 2013, the first day of SSDM2013
A separate fee is required to attend the Short Course.
Online Registration
You will also be able to register onsite.
A. Fundamentals on Advanced CMOS/Memory technologies
(Organizer: S. Takagi, Univ. of Tokyo)
1) |
“Present Status and Future Trend of CMOS Scaling” T. Hiramoto (Univ. of Tokyo, Japan) |
2) |
“High Mobility Channel CMOS Technology” S. Takagi (Univ. of Tokyo, Japan) |
3) |
“Impact of 3D structured Memory and Spintronics based NV-Memory for High Performance & Low Power Systems” T. Endoh (Tohoku Univ., Japan)
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B. Fundamentals and Applications of Spintronics Frontier
(Organizer: A. Fujiwara, NTT Corp.)
1) |
“Advanced Spintronic Materials: for Generation and Control of Spin Current” K. Takanashi (Tohoku Univ., Japan) |
2) |
“Spin Caloritronics - more than spin-dependent thermoelectrics” G. E.W. Bauer (Tohoku Univ., Japan) |
3) |
“MTJ-based Spintronics” Y. Ando (Tohoku Univ., Japan) |
4) |
“Group-IV Spintronics” M. Shiraishi (Osaka Univ., Japan) |
5) |
“Light and Spintronics” H. Munekata (Tokyo Tech, Japan) |
C. Trends for Future Power Devices
(Organizer: S. Fujita, Kyoto Univ.)
1) |
“Technologies and trends related to Si Power Module” K.Satoh, T.Minato (Mitsubishi Electric) |
2) |
“Recent Advances in Si, SiC and GaN High-Voltage Power Devices” T. P. Chow (Rensselaer Polytechnic Institute, USA) |
3) |
“Power Electronics Innovation by Widegap Semiconductor Power Devices” H. Okumura (AIST, Japan) |
4) |
“Diamond-Based Power Devices” H. Umezaea (AIST, Japan) |
5) |
“Gallium Oxide-Based Power Devices” M. Higashiwaki (NICT, Japan) |
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