AWARDS

SSDM2013 awards the following papers for outstanding papers presented in past conferences as follows.

SSDM Paper Award

SSDM Paper Award2013 will be awarded to the best paper presented at SSDM2012.

"Eight-bit CPU with Nonvolatile Registers Capable of Holding Data for 40 Days at 85C Using Crystalline In-Ga-Zn Oxide Thin Film Transistors"
T. Ohmaru, S. Yoneda, T. Nishijima, M. Endo, H. Dembo, M. Fujita, H. Kobayashi, K. Ohshima, T. Atsumi, Y. Shionoiri, K. Kato, Y. Maehashi, J. Koyama, S. Yamazaki
(Semiconductor Energy Lab. Corp. Ltd., Japan)

SSDM Young Researcher Award

SSDM Young Researcher Award 2013 will be awarded to outstanding papers authored by young researchers and presented at SSDM2012.

"Nickel Stanogermanide Ohmic Contact on N-type Germanium-Tin (Ge1-xSnx) using Se and S Implant and Segregation"
Y. Tong, ¹ S. Su, ² B. Liu, ¹ L. Wang, ¹ P. S. Y. Lim, ¹ Y. Yang, ¹ W. Wang, ¹ K. L. Low, ¹ G. Zhang, ² C. Xue, ² B. Cheng, ² G. Han, ¹ and Y.-C. Yeo¹ (¹National Univ. of Singapore, ² State Key Lab. on Integrated Optoelectronics, Inst. of Semiconductors, Chinese Academy of Sci., Singapore)

"Integration of 1-bit CMOS Address Decoders and Single-Electron Transistors Operating at Room Temperature"
R. Suzuki, M. Nozue, T. Saraya, and T. Hiramoto (Univ. of Tokyo, Japan)

"Shape-memory polymer microvalves and its application to a field-programmable valve array"
H. Takehara, ¹,² K. Uto, ³ M. Ebara, ³ T. Aoyagi, ³ and T. Ichiki¹ (¹Univ. of Tokyo, ²JSPS, ³NIMS, Japan)

"Graphene ReRAM towards All Graphene LSIs: Experimental Demonstration of Two-terminal ReRAM Operation in Electrically Broken Mono- and Multi-layer Graphene"
A. Shindome,¹,² Y. Doioka,¹,² S. Oda,¹ and K. Uchida ² (¹Tokyo Tech, ²Keio Univ. Japan)

>>SSDM Award