History of SSDM Paper Award
| Year of Award | Year of presentaion | Presentation number | Paper Title | Authors | Affiliation (Country) |
| SSDM2024 56th |
2023 | F-7-02 | Epi Source/Drain Damage Mitigation with Inner Spacer and Buffer Optimization in Stacked Nanosheet Gate-All-Around Transistors | Curtis S Durfee1, Ivo Otto2, Subhadeep Kal2, Shanti Pancharatnam2, Matthew Flaugh2, Toshiki Kanaki2, Matthew Rednor2, Huimei Zhou1, Liqiao Qin1, Juntao Li1, Luciana Meli1, Nicolas Loubet1 Peter Biolsi2 and Nelson Felix1 | 1 IBM (United States of America), 2 TEL (United States of America), |
| SSDM2023 55th |
2022 | G-10-02 | Impact of Back-side Power Delivery Network Layout on the FinFET Device Performance | Goutham Arutchelvan, Thomas Chiarella, Hiroaki Arimura, Anabela Veloso, Anne Jourdain, Eugenio Dentoni Litta, Naoto Horiguchi and Jerome Mitard | imec (Belgium) |
| SSDM2022 54th |
2021 | A-1-02 | 16×8 Quantum Dot Array Operation at Cryogenic Temperatures | Noriyuki Lee1, Ryuta Tsuchiya1, Yusuke Kanno1, Toshiyuki Mine1, Yoshitaka Sasago1, Go Shinkai1, Raisei Mizokuchi2, Jun Yoneda2, Tetsuo Kodera2, Chihiro Yoshimura1, Shinichi Saito1, Digh Hisamoto1 and Hiroyuki Mizuno1 | 1 Hitachi, Ltd. (Japan), 2 Tokyo Tech (Japan), |
| SSDM2021 53rd |
2020 | I-5-02 | TiN/MgO/Si memrisitive devices as a selectorless synapse for ultralow-power analog neuron chip and time-series applications | Takao Marukame1, Koichi Mizushima1, Kumiko Nomura1, Junichi Sugino2, Toshimitsu Kitamura2, Koji Takahashi2, Yutaka Tamura2, and Yoshifumi Nishi1 | 1 Toshiba Corporation, 2 Toshiba Information Systems (Japan) Corporation |
| SSDM2020 52nd |
2019 | K-1-02 | Demonstration of 1200 V / 1.4 mΩ cm2 Vertical GaN Planar MOSFET Fabricated by All Ion Implantation Process | Ryo Tanaka1, Shinya Takashima1, Katsunori Ueno1, Hideaki Matsuyama1, Yuta Fukushima1, Masaharu Edo1, and Kiyokazu Nakagawa2 | 1 Fuji Electric Co., Ltd., 2 Univ. of Yamanashi |
| SSDM2018 50th |
2017 | F-3-04 | Ultra-sensitive biosensor with capacitive coupling-gate InGaZnO-based FET | K. Ito1, K. Nishimura1, K. Ikeda2, K. Matsuzawa2, T. Tezuka2, T. Sakata1 | 1.Univ. of Tokyo (Japan), 2.Toshiba Corp. (Japan) |
| SSDM2017 49th |
2016 | C-3-02 | 1.3µm Hybrid III-V on Silicon Transmitter Operating at 25Gb/s | T.Ferrotti1,2,3, B.Blampey1, H.Duprez1, C.Jany1, A.Chantre2, ○F.Boeuf2, C.Seassal3, B.Ben Bakir1 | 1.Univ. Grenoble Alpes, CEA, LETI, MINATEC Campus (France), 2.STMicroelectronics (France), 3.Univ. de Lyon (France) |
| SSDM2016 48th |
2015 | K-2-4 | Steep-Slope Tunnel FET using InGaAs-InP Core-Shell Nanowire/Si Heterojunction | K. Tomioka1, 2, F. Ishizaka1, J. Motohisa1, T. Fukui1 | 1.Hokkaido Univ., 2.JST-PRESTO, Japan |
| SSDM2015 47th |
2014 | F-1-2 | Operations of CMOS Inverter and Ring Oscillator Composed of Ultra-Thin Body Poly-Ge p- and n-MISFETs for Stacked Channel 3D-IC | Y. Kamata1, M. Koike1, E. Kurosawa1, M. Kurosawa2, H. Ota1, O. Nakatsuka2, S. Zaima2 and T. Tezuka1 | 1.AIST, 2.Nagoya Univ. |
| SSDM2014 46th |
2013 | B-1-2 | Thermal and Plasma Treatments for Improved (Sub-)1nm EOT Planar and FinFET-based RMG High-k Last Devices and Enabling a Simplified Scalable CMOS Integration Scheme | A. Veloso1, G. Boccardi1, L.Å. Ragnarsson1, Y. Higuchi2, H. Arimura1,3, J.W. Lee1,3, E. Simoen1, M.J. Cho1, Ph.J. Roussel1, V. Paraschiv1, X. Shi1, T. Schram1, S.A. Chew1, S. Brus1, A. Dangol1, E. Vecchio1, F. Sebaai1, K. Kellens1, N. Heylen1, K. Devriendt1, H. Dekkers1, A. Van Ammel1, T. Witters1, T. Conard1, I. Vaesen1, O. Richard1, H. Bender1, R. Athimulam1, T. Chiarella1, A. Thean1 and N. Horiguchi1 | 1.Imec, 2.Panasonic, 3.K. U. Leuven |
| SSDM2013 45th |
2012 | J-5-2 | Eight-bit CPU with Nonvolatile Registers Capable of Holding Data for 40 Days at 85°C Using Crystalline In-Ga-Zn Oxide Thin Film Transistors | T. Ohmaru, S. Yoneda, T. Nishijima, E. Masami, H. Dembo, M. Fujita, H. Kobayashi, K. Ohshima, T. Atsumi, Y. Shionoiri, K. Kato, Y. Maehashi, J. Koyama and S. Yamazaki | Semiconductor Energy Lab. Corp. Ltd., Japan |
| SSDM2012 44th |
2011 | F-1-2 | Studies on Static Noise Margin and Scalability for Low-Power and High-Density Nonvolatile SRAM using Spin-Transfer-Torque (STT) MTJs | T. Ohsawa, F. Iga, S. Ikeda, T. Hanyu, H. Ohno and T. Endoh | Tohoku Univ., Japan |
| SSDM2011 43rd |
2010 | D-5-4L | Stimulated Emission in Silicon Fin Light-Emitting Diode | S. Saito1,3, K. Tani1,3, T. Takahama1, M. Takahashi1, E. Nomoto1, Y. Matsuoka1, J. Yamamoto1, Y. Suwa2,3, D. Hisamoto1, S. Kimura1, H. Arimoto1, T. Sugawara1, M. Aoki1, K. Torii1 and T. Ido1,3 | 1.Hitachi, Ltd., Central Res. Lab., 2.Hitachi Advanced Res. Lab., 3.PECST, Japan |
| SSDM2010 42nd |
2009 | K-4-3 | Carrier-induced Dynamic Backaction in GaAs Micromechanical Resonators | H. Okamoto1, D. Ito1,2, K. Onomitsu1, H. Sanada1, H. Gotoh1, T. Sogawa1 and H. Yamaguchi1,2 | 1.NTT Basic Res. Labs., 2.Tohoku Univ., Japan |
| SSDM2009 41st |
2008 | B-1-3 | High Mobility sub-60nm Gate Length Germanium-On-Insulator Channel pMOSFETs with Metal Source/Drain and TaN MIPS Gate | K. Ikeda1, Y. Yamashita1, M. Harada1, T. Yamamoto1, S. Nakaharai1, N. Hirashita1, Y. Moriyama1, T. Tezuka1, N. Taoka2, I. Watanabe3, N. Hirose3, N. Sugiyama1 and S. Takagi2,4 | 1.MIRAI-ASET, 2.MIRAI-ASRC, 3.NICT, 4.Univ. of Tokyo, Japan |
| SSDM2008 40th |
2007 | A-3-4 | nMOSFET Reliability Improvement attributed to the Interfacial Dipole formed by La Incorporation in HfO2 | C. Y. Kang1, P. Kirsch2, D. Heh1, C. Young1, P. Sivasubramani1, G. Bersuker1, S. C. Song1, R. Choi1, B. H. Lee2, J. Lichtenwalner3, J. S. Jur3, A. I. Kingon3, and R. Jammy2 | 1.SEMATECH, USA, 2.IBM Assignee, USA, 3.North Carolina State Univ., USA |
| D-8-5 | Fabrication of single electron transistor using cage-shaped protein supramolecule | S. Kumagai1, S. Yoshii1, N. Matsukawa1, R. Tsukamoto3, K. Nishio1, and I. Yamashita1,2,3 | 1.Matsushita Electric Industrial Co., Ltd., Japan, 2.NAIST, Japan, 3.Core Research for Evolutional Sci. and Tech., Japan | ||
| SSDM2007 39th |
2006 | A-2-2 | Optical Properties of Dynamically-Modulated Dots and Wires Formed by Surface Acoustic Waves | T. Sogawa1, H. Gotoh1, Y. Hirayama1, T. Saku1, S. Miyashita2, P. V. Santos3, and K. H. Ploog3 | 1.NTT Basic Research Labs., Japan, 2.NTT Advanced Technology Corp., Japan, 3.Paul Drude Institute, Germany |
| SSDM2006 38th |
2005 | A-1-3 | Extendibility of High Mobility HfSiON Gate Dielectrics | S. Inumiya, T. Miura, K. Shirai, T. Matsuki, K. Torii* and Y. Nara | Semiconductor Leading Edge Technologies, Inc., Japan |
| I-1-2 | High-Voltage 4H-SiC RESURF MOSFETs Processed by Oxide Deposition and N2O Annealing | T. Kimoto, H. Kawano, M. Noborio and J. Suda | Kyoto University, Japan | ||
| SSDM2005 37th |
2004 | H-7-4 | Observation of Light Emission at 〜1.5 µm from InAs Quantum Dots in Photonic Crystal Microcavity | S. Iwamoto, J. Tatebayashi, T. Fukuda, T. Nakaoka, S. Ishida and Y. Arakawa | University of Tokyo, Japan |
| C-10-1 | Dielectric Constant Increase of Yttrium-Doped HfO2 by Structural Phase Modification | K. Kita, K. Kyuno and A. Toriumi | University of Tokyo, Japan | ||
| SSDM2004 36th |
2003 | F-9-2 | 100-Gbit/s Full-Rate Operation of PD-EAM Optical Gate for Retiming Function | T. Yoshimatsu, S. Kodama, K. Yoshino and H. Ito | NTT Corp., Japan |