History of SSDM Award

Year of the award Awarded thesis
Conference number held Year of presentaion Thesis number Name of awardees Title of thesis
34th
(2023)		 14th 1982 A-2-LNI Eiichi Suzuki,Yutaka Hayashi, Kenichi Ishii,
and Hisato Hiraishi
Electrotechnical Laboratory, Japan		 A Low-Voltage Alterable Metal-Oxide-Nitride-Oxide-Semiconductor Memory with Nano-Meter Thick Gate Insulators (NM-MONOS)
33rd
(2022)		 16th 1984 B-6-2 Akio Nakagawa, Hiromichi Ohashi,and Tsuneo Tsukakoshi
Toshiba Research and Development Center, Japan		 High Voltage Bipolar‐Mode MOSFET with High Current Capability
32nd
(2021)		 19th 1987 C-3-1 Kazuyuki Tsunokuni1, Kazuo Nojiri1, Sumi Kuboshima2, and Kado Hirobe3
1 Musashi Works, Hitachi, Ltd., 2 Hitachi Microcomputer Engineering, Ltd., 3 Kanagawa Works, Hitachi, Ltd.		 The Effect of Charge Build-up on Gate Oxide Breakdown during Dry Etching
31st
(2020)		 33rd 2001 D-8-3 T. Hasegawa1,2, K. Terabe1,2, T. Nakayama1,2, and M. Aono1,2,3
1 Surface and Interface Laboratory, RIKEN (The Institute of Physical and Chemical Research), 2 CREST, Japan Science & Technology Corporarion (JST), 3 Department of Precision Science and Technology, Osaka University		 Quantum Point Contact Switch using Solid Electrochemical Reaction
30th
(2019)		 7th 1975 A-5-2 I. Yoshida, M. Kubo and S. Ochi
Central Research Laboratory, Hitachi, Ltd.		 A High Power MOSFET with a Vertical Drain Electrode and Meshed Gate Structure
29th
(2018)		 26th 1994 S-IV-3 T. Shibata, H. Kosaka, H. Ishii, and T. Ohmi
Tohoku University		 A Neuron-MOS Neural Network Using Low-Power Self-Learning-Compatible Synapse Cells
28th
(2017)		 25th 1993 D-9-4 T. Enoki, Y. Umeda and Y. Ishii
NTT LSI Laboratories		 0.05-µm-Gate InAlAs/InGaAs HEMT and Reduction of Its Short-Channel Effects
27th
(2016)		 11th 1979 B-3-4 S. Arai, Y. Itaya, Y. Suematsu and K. Kishino
Tokyo Institute of Technology		 1.5-1.6 µm Wavelength (100) GaInAsP/InP DH Lasers
26th
(2015)		 19th 1987 C-3-6 H. Shinriki, Y. Nishioka and K. Mukai
Central Research Laboratory Hitachi Ltd.		 Highly Reliable Ta2O5/SiO2 Double Dielectric Films on Poly Crystalline Silicon
25th
(2014)		 24th 1992 S-IV-3 A.Toriumi, T. Mizuno, M. Iwase, M. Takahashi, H. Niiyama, M. Fukumoto, S. Inaba, I. Mori, and M. Yoshimi
ULSI Research Center, Toshiba Corporation		 High Speed 0.1µm CMOS Devices Operating at Room Temperature
24th
(2013)		 9th 1977 C-1-1 H. Suzuki, K. Suyama, K. Odani, and M. Fukuta
Fujitsu Laboratories Ltd.		 C-band 10W Power GaAs MESFET with an Internal Matching Circuit

9th 1977 C-1-2 Y. Aono, A. Higashisaka, T. Ogawa and F. Hasegawa
Central Research Laboratories, Nippon Electric Co. Ltd.		 X- and Ku-band Performance of Submicron Gate GaAs Power FETs
23rd
(2012)		 13th 1981 A-3-8 I. Kato, T. Ito, S. Inoue, T. Nakamura, and H. Ishikawa
Fujitsu Laboratories Ltd.		 Ammonia annealed SiO2 films for thin gate insulator
22nd
(2011)		 17th 1985 C-3-9
LN		 T. Sekigawa, Y. Hayashi1, K. Ishii2, and S. Fujita3
Nanoelectronics Research Institute of AIST, 1 Nanosystem Research Institute of AIST, 2 (Ex) Nanoelectronics Research Institute of AIST, 3 Corporate Technology Planning Center, Ricoh Company, Ltd.		 XMOS Transistor for a 3D-IC
21st
(2010)		 18th 1986 A-7-4 K. Yamada
Univ. of Tsukuba		 Thermodynamical Approach to a New High Dielectric Capacitor Structure: W/HfO2/W
20th
(2009)		 25th 1993 PB-3-9 K. Natori
Univ. of Tsukuba		 Ⅰ-Ⅴ Characteristics of SOI MOSFETs in Ballistic Mode
19th
(2008)		 2nd 1970 1-1 S. Furukawa and H. Ishiwara
Tokyo Tech.		 Vacancy Distribution Theory for Ion-Implanted Target
18th
(2007)		 3rd 1971 5-2 H. Sakaki and T. Sugano
Univ. of Tokyo		 Anistropic Channel Conductivity of a MOS Transistor on the (110) Surface of Silicon
17th
(2006)		 14th 1982 B-2-3 H. Soda, Y. Motegi, and K. Iga
Tokyo Tech.		 Threshold Condition and Design of Surface Emitting GaInAsP/InP Injection Lasers
16th
(2005)		 19th 1987 C-4-2 H. Matsunami, N. Kuroda, W. S. Yoo, S. Nishino, and K. Shibahara
Kyoto Univ., Japan		 Step-Controlled VPE Growth of SiC Single Crystals at Low Temperatures
15th
(2004)		 22th 1990 S-CII-4 Y. Hayashide, H. Miyatake, J. Mitsuhashi, M. Hirayama, T. Higaki, and H. Abe
Mitsubishi Electric, Japan 		Fabrication of Storage Capacitance-Enhanced Capacitors with a Rough Electrode

22th 1990 S-CII-5 H. Watanabe, N. Aoto, S. Adachi, T. Ishijima, E. Ikawa, and K. Terada
NEC, Japan		 A New Stacked Capacitor Structure using Hemispherical-Grain(HSG) Poly-Silicon Electrodes
14th
(2003)		 24th 1992 S-1-1 I. Akasaki and H. Amano
Meijo Univ., Japan		 Room Temperature Ultraviolet/Blue Light Emitting Devices Based on AlGaN/GaN Multi-Layered Structure
13th
(2002)		 3th 1971 5-5 H. Hara, T. Sato, Y. Takeishi, K. Ohuchi, H. Tango, Y. Ohmori, H. Iizuka, Y. Yasuda, and F. Masuoka
Toshiba Research and Development Center, Japan		 Avalanche-Injection MOS Read-Only Memory
12th
(2001)		 6th 1974 B-3-3 M. Esashi and T. Matsuo
Tohoku Univ., Japan		 Biomedical Cation Sensor Using Field Effect of Semiconductor
11th
(2000)		 4th 1972 6-1 T. Warabisako, I. Yoshida, and T. Tokuyama
Hitachi, Japan		 Properties of MOS Structures Prepared on Substrates Having Ion-Implanted Impurity Distribution Profile
9th
(1998)		 12th 1980 C-3-9
(LN)		 T. Mimura, S. Hiyamizu, H. Hashimoto, and H. Ishikawa
Fujitsu Labs., Japan		 An Enhancement-Mode High Electron Mobility Transistor for VLSI
10th
(1999)		 6th 1974 B-2-1 H. Abe
Mitsubishi, Japan		 The Application of Gas Plasma to the Fabrication of MOS LSI (Invited)

18th 1986 B-8-4 Y. Matsushita, M. Wakatsuki, and Y. Saito
Toshiba, Japan		 Improvement of Silicon Surface Quality by H2 Anneal
8th
(1997)		 12th 1980 A-4-7 T. Sakai, Y. Kobayashi, H. Yamauchi, M. Sato, and T. Makino
NTT, Japan		 High Speed Bipolar ICs Using Super Self-Aligned Process Technology
7th
(1996)		 11th 1979 A-3-7 K. Izumi, M. Dohken, and H. Ariyoshi
NTT, Japan		 High Speed C-MOS IC Using Buried SiO2 Layers Formed by Ion Implantation
6th
(1995)		 5th 1973 3-4 H. Yonezu, I. Sakuma, T. Kamejima, M. Ueno, K. Kobayashi, K. Nishida, Y. Nannichi, and I. Hayashi
Nippon Electric, Japan		 Degradation of AlxGa1-xAs Double Heterostructure Lasers
5th
(1994)		 10th 1978 A-1-4 M. Koyanagi and N. Hashimoto
Hitachi, Japan		 Novel High Density, Stacked Capacitor MOS RAM
4th
(1993)		 7th 1975 A-1-1 Y. Horiike and M. Shibagaki
Toshiba, Japan		 A New Chemical Dry Etching
3rd
(1992)		 11th 1979 C-3-4 M. Tajima, A. Yusa*, and T. Abe**
ETL, *Komatsu Electronic Metals and **Shin-Etsu Handotai, Japan		 Characterization of Residual Impurities in Highly Pure Si Crystals by Photoluminescence Technique
2nd
(1991)		 6th 1974 A-1-1 T. Tsukada
Hitachi, Japan		 Buried-Heterostructure Injection Lasers
1st
(1990)		 1st 1969 4-1 Y. Tarui, Y. Hayashi, and T. Sekigawa
ETL, Japan		 Diffusion Self-Aligned MOST: A New Approach for High Speed Device