Invited Speakers
Area 1 Advanced CMOS: Material Fundamentals / Process Science / Device Physics
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A-4-01
Ge and GeSn-based Nano-electronic Devices and Photo Detectors
Gong Xiao
(NUS, Singapore)
-
A-6-01
Metal-Assisted Solid Phase Crystallization of Vertical Si Channel in 3D Flash Memory
Hidenori Miyagawa
(Kioxia Corp., Japan)
-
A-3-01
Materials and Layer Transfer Process Technologies for Heterogeneous 3D Integration of Germanium on Silicon
Willy Rachmady
(Intel Corp., USA)
-
A-5-01
Towards extreme scaling of logic standard cells using Forksheet devices
Pieter Weckx
(imec, Belgium)
Area 2 Advanced and Emerging Memories / New Applications
-
B-10-04
Overcoming the Endurance-Retention Trade-Off in CBRAM: the Introduction of Co as Active Electrode
Attilio Belmonte
(imec, Belgium)
-
B-2-05
Introduction to FeFET Technology
Sven Beyer
(GrobalFoundaries, Germany)
-
B-9-01
A General Assessment of Computing-In-Memory (CIM) for Deep Neural Network (DNN) with Flash Memory Devices
Hang-Ting Lue
(Macronix International Co., Ltd, Taiwan)
-
B-7-02
Nanoscale Limits of Resistance Switching in Some Oxides and 2D Chalcogenide Materials
Eric Pop
(Stanford Univ., USA)
-
B-7-03
Phase-change materials for low-energy operation PCRAM
Yuji Sutou
(Tohoku Univ., Japan)
Area 3 Interconnect / 3D Integrations / MEMS
-
C-9-01
Hacking Blu-ray for High-Resolution 3D printing
En-Te Hwu
(Technical Univ. of Denmark, Denmark)
-
C-6-01
Novel Stacking Technologies for The Stacked CMOS Image Sensors
Yoshihisa Kagawa
(Sony Semiconductor Solutions Corp., Japan)
-
C-4-01
3D-IC technology in the era of AI, IoT and Big data
Katsuya Kikuchi
(AIST, Japan)
-
C-1-01
Novel low k Dielectric materials for nano device interconnect technology
Son Nguyen
(IBM Research, USA)
Area 4 Power / High-speed Devices and Materials
-
D-2-01
Vertical GaN Power Device
—Expectation and Challenges— Tetsu Kachi (Nagoya Univ., Japan) -
D-3-01
Recent Advances in GaN Power Amplifier Design for Millimeter-Wave Applications
Jun Kamioka
(Mitsubishi Electric Corp., Japan) -
D-6-01
Recent Progress of Silicon Carbide Super-Junction MOSFETs
Ryoji Kosugi
(AIST, Japan)
-
D-8-01
Innovative Silicon (i-Si) Power Device with Time-Spatial Carrier Control
Tomoyuki Miyoshi
(Hitachi Ltd., Japan)
-
D-10-01
The impact of buffer design on GaN HEMTs
Michael J. Uren
(Univ. of Bristol, UK)
-
D-5-05
High-Performance III-V-On-Si Transistor Technology Platform
Cezar B. Zota
(IBM Research Europe, Switzerland)
Area 5 Photonics: Devices / Integration / Related Technology
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E-9-01
High-Speed Ge/Si Electro-Absorption Optical Modulator with C-band Wavelengths Operation at high Temperature up to 85°C
Junichi Fujikata
(PETRA, Japan)
-
E-10-01
Plasmonics – High-Speed Photonics for Co-Integration with Electronics
Ueli Koch
(ETH-Zurich, Switzerland)
-
E-1-03
Quantum Dot Lasers Monolithically Integrated on Si Substrate
Huiyun Liu
(UCL, UK)
-
E-9-04
Singe 120 Gbit/s Operation of Silicon-Polymer Hybrid Modulator
Shiyoshi Yokoyama
(Kyushu Univ., Japan)
Area 6 Photovoltaic / Energy Harvesting / Battery-related Technology
Area 7 Organic / Molecular / Bio-electronics
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G-6-01
Doping of organic and inorganic semiconductors with molecular acceptors
Norbert Koch
(Humboldt-Universität zu Berlin, Germany)
-
G-5-01
Printing Technology for Stress-Free Human Monitoring Devices
Ken-ichi Nomura
(AIST, Japan)
-
G-4-01
Polymer mold fabrication for biomimetic circular microstructures
Woo-Tae Park
(Seoul National Univ. of Sci. and Tech., Korea)
-
G-1-01
Recent development of near infrared organic light-emitting materials and devices
Jean-Charles Ribierre
(KOALA Tech Inc., Japan)
-
G-2-01
Preparation of Purified Key Materials for
Lead and Tin-based Perovskite Solar Cells Atsushi Wakamiya (Kyoto Univ., Japan)
Area 8 Low Dimensional Devices and Materials
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H-6-01
Novel Nanowires from Highly Mismatched Alloys for Optoelectronics
Irina A. Buyanova
(Linkoping Univ., Sweden)
-
H-1-01
Controlled Growth and Properties of InAs Nanostructures
Itaru Kamiya
(Toyota Technological Inst., Japan)
-
H-10-01
Two-dimensional Materials and Devices: Promising Concepts for Emerging IT Applications
Max C. Lemme
(RWTH Aachen Univ., Germany)
-
H-2-01
Growth of transition-metal-dichalcogenide in-plane heterostructures
Yasumitsu Miyata
(Tokyo Metropolitan Univ., Japan)
-
H-4-01
Spin-Orbit Interaction in a Hole Nanowire and its Applications for Hybrid Quantum Systems
Rui Wang
(Tokyo Univ. of Science, Japan)
-
H-8-01
2D Materials for Next-Generation Computing Technologies
Peng Zhou
(Fudan Univ., China)
Area 9 Novel Functional / Quantum / Spintronic Devices and Materials
-
I-5-01
Programming Artificial Intelligence:
A Reconfigurable AI shield for Embedded Microcontrollers Tetsuya Asai (Hokkaido Univ., Japan) -
I-4-01
Quantum computation with superconducting qubits
Abhinav Kandala
(IBM, USA)
-
I-6-01
Quantum computing with silicon and germanium: hot and fast
Menno Veldhorst
(TU Delft, The Netherland)
-
I-1-01
Spintronics on chiral objects
See-Hun Yang
(IBM, USA)
Area 10 Thin Film Electronics: Oxide / Non-single Crystalline / Novel Process
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J-6-01
Electronic property modulation of transition metal oxides by electrochemical and strain engineering
Takayoshi Katase
(Tokyo Tech, Japan)
-
J-4-01
An Assessment on Dynamic Physical Changes in Dielectric Thin Films: A View Toward the Mechanism Behind The Resistive Switching
Nobuhiko P. Kobayashi
(Univ. of California, Santa Cruz, USA)
-
J-1-01
High performance electronics based on 2D materials and ultrathin ITO
Yanqing Wu
(Peking Univ., China)
Area 11 Advanced Materials: Synthesis / Crystal Growth / Characterization
-
K-1-02
Plasmonic Nanomaterials Based on Metal-Coated Porous Silicon: Fabrication, Characterization and Application in Biosensing
Hanna Bandarenka
(Belarusian State Univ. of Informatics and Radioelectronics, Belarus) -
K-1-01
Functionalization of Group IV Semiconductor Nanowire Channels for High-Speed Transistor Applications
Naoki Fukata
(NIMS, Japan)
-
K-4-01
Gate Stack Technology for Advanced GaN-based MOS Devices
Heiji Watanabe
(Osaka Univ., Japan)
-
K-9-01
Triboelectric Nanogenerators for Energy Harvesting, Delivery and Tribotronics
Sang-Woo Kim
(Sungkyunkwan Univ., Korea)
Area 12 Advanced Circuits / Systems Interacting with Innovative Devices and Materials
-
D-3-03
Future of 300-GHz-Band Wireless Communications and Their Enabler, CMOS Transceiver Technologies
Minoru Fujishima
(Hiroshima Univ., Japan)
-
A-7-01
Circuit and Package Co-design for 3D Integration
Tadahiro Kuroda
(Univ. of Tokyo, Japan)
-
L-9-01
Mixed Signal Technology for 5G Era: History and Future
Akira Matsuzawa
(Tech Idea, Japan)
-
C-5-01
Circuit Technology for High-speed Wireline Communication
Hisakatsu Yamaguchi
(Fujitsu Labs. Ltd., Japan)
-
D-3-02
Breaching the 70% Efficiency Plateau: a Mixed-Signal Approach to RF-PA Design
Atsushi Yamaoka
(Toshiba Corp., Japan)
PAGE CONTENTS
- Area 1 :
Advanced CMOS: Material Fundamentals / Process Science / Device Physics - Area 2 :
Advanced and Emerging Memories / New Applications - Area 3 :
Interconnect / 3D Integrations / MEMS - Area 4 :
Power / High-speed Devices and Materials - Area 5 :
Photonics: Devices / Integration / Related Technology - Area 6 :
Photovoltaic / Energy Harvesting / Battery-related Technology - Area 7 :
Organic / Molecular / Bio-electronics - Area 8 :
Low Dimensional Devices and Materials - Area 9 :
Novel Functional / Quantum / Spintronic Devices and Materials - Area 10 :
Thin Film Electronics: Oxide / Non-single Crystalline / Novel Process - Area 11 :
Advanced Materials: Synthesis / Crystal Growth / Characterization - Area 12 :
Advanced Circuits / Systems Interacting with Innovative Devices and Materials