COMMITTEES

Program Committee

Subcommittee Members:

[ 1 ] Advanced Gate Stack / Si Processing Science

Chair:	J. Yugami (Renesas Tech. Corp.)
Co-Chair:	S. Miyazaki (Hiroshima Univ.)
Members:	O. Faynot (CEA-LETI) H. Fukutome (Fujitsu Labs. Ltd.) H. Hwang (Gwangju Inst. of Sci. & Tech.) M. F. Li (Fudan Univ. and NUS) B. Mizuno (UJT Lab. Inc.) Y. Nara (Selete) K. Shiraishi (Univ. of Tsukuba) Y. Tsunashima (Toshiba Corp.) T. Tatsumi (Canon ANELVA Corp.) S. Tsujikawa (Sony Corp.)

[ 2 ] Characterization and Materials Engineering for Interconnect Integration

Chair:	Y. Hayashi (NEC Electronics Corp.)
Co-Chair:	S. Ogawa (Selete)
Members:	G. Beyer (IMEC) J. Gambino (IBM) N. Hata (NEDO) S. Hsu (National Tsinghua Univ.) K. Ito (Kyoto Univ.) J. Kodate (NTT Corp.) M. Kodera (Toshiba Corp.) S. Matsumoto (Matsushita Electric Industrial Co., Ltd.) M. Matsuura (Renesas Tech. Corp.) N. Nakano (Keio Univ.) M. Nihei (Fujitsu Labs. Ltd.) T. Tatsumi (Sony Corp.)

[ 3 ] CMOS Devices /Device Physics

Chair:	M. Hane (NEC Electronics Corp.)
Co-Chair:	K. Shibahara (Hiroshima Univ.)
Members:	A. Azuma (Toshiba Corp.) F. Boeuf (STMicroelectronics) S. Hayashi (Matsushita Electric Industrial Co., Ltd.) T. Hiramoto (Univ. of Tokyo) D. Hisamoto (Hitachi, Ltd.) K. Horita (Renesas Tech. Corp.) H. C. Lin (National Chiao Tung Univ.) N. Mori (Osaka Univ.) T. Tanaka (Fujitsu Ltd.) H. Wakabayashi (Sony Corp.) J. C. S. Woo (UCLA)

[ 4 ] Advanced Memory Technology

Chair:	A. Nitayama (Toshiba Corp.)
Co-Chair:	M. Moniwa (Renesas Tech. Corp.)
Members:	Y. C. Chen (Macronix International Co., Ltd.) T. Eshita (Fujitsu Microelectronics Ltd.) H. Hada (NEC Corp.) K. Hamada (Elpida Memory, Inc.) K. Ishihara (Sharp Corp.) S. Lee (Samsung Electronics Co., Ltd.) R. Shen (eMemory Tech. Inc.) Y. Shimamoto (Hitachi, Ltd.) M. J. Tsai (ITRI)

[ 5 ] Advanced Circuits and Systems

Chair:	S. Kawahito (Shizuoka Univ.)
Co-Chair:	T. Matsuoka (Osaka Univ.)
Members:	R. Fujimoto (Toshiba Corp.) J. C. Guo (National Chiao Tung Univ.) T. Hamasaki (Texas Instruments Japan Ltd.) M. Horiguchi (Renesas Tech. Corp.) T. Komuro (Agilent Technologies Japan, Ltd.) K. Masu (Tokyo Tech.) J. K. Shin (Kyungpook National Univ.) H. Yamauchi (Samsung Electronics Co., Ltd.)

[ 6 ] Compound Semiconductor Circuits, Electron Devices and Device Physics

Chair:	T. Hashizume (Hokkaido Univ.)
Co-Chair:	M. Kuzuhara (Univ. of Fukui)
Members:	Y. J. Chan (Industrial Tech. Res. Inst.) E. Y. Chang (National Chiao Tung Univ.) R. Hattori (Mitsubishi Electric Corp.) S. Kuroda (Eudyna Devices Inc.) K. Maezawa (Univ. of Toyama) G. Meneghesso (Univ. of Padova) A. Nakagawa (New Japan Radio Co., Ltd.) Y. Ohno (Univ. of Tokushima) K. S. Seo (Seoul National Univ.) S. Tanaka (NEC Corp.) T. Tanaka (Matsushita Electric Industrial Co., Ltd.) S. Yamahata (NTT Corp.)

[ 7 ] Photonic Devices and Device Physics

Chair:	H. Yamada (Tohoku Univ.)
Co-Chair:	M. Sugawara (Fujitsu Labs. Ltd.)
Members:	R. Akimoto (AIST) S. J. Chua (IMRE and NUS) S. L. Chuang (Univ. of Illinois at Urbana-Champaign) M. Ezaki (Toshiba Corp.) J. Fujikata (NEC Corp.) M. Gotoda (Mitsubishi Electric Corp.) Y. Huang (Tsinghua Univ.) Y. Lee (Hitachi, Ltd.) S. Noda (Kyoto Univ.) O. Wada (Kobe Univ.)

[ 8 ] Advanced Material Synthesis and Crystal Growth Technology

Chair:	A. Yamada (Tokyo Tech.)
Co-Chair:	H. Yamaguchi (NTT Corp.)
Members:	H. Asahi (Osaka Univ.) A. Endo (Tohoku Univ.) T. Fukui (Hokkaido Univ.) T. Iwai (Fujitsu Labs. Ltd.) M. Kobayashi (Waseda Univ.) M. Nakada (NEC Corp.) R. Notzel (Eindhoven Univ. of Tech.) Y. Sakuma (NIMS) E. S. Tok (National Univ. of Singapore)

[ 9 ] Physics and Applications of Novel Functional Materials and Devices

Chair:	T. Fujisawa (Tokyo Tech.)
Co-Chair:	Y. Takahashi (Hokkaido Univ.)
Members:	D. G. Austing (Nat'l Res. Council of Canada) K. Hirakawa (Univ. of Tokyo) P. W. Li (National Central Univ.) K. Ono (RIKEN) B. G. Park (Seoul National Univ.) Y. Suda (Tokyo Univ. of Agri. & Tech.) M. Tabe (Shizuoka Univ.) Y. Uraoka (NAIST) M. Watanabe (Tokyo Tech.)

[ 10 ] Organic Materials Science, Device Physics, and Applications

Chair:	T. Kamata (AIST)
Co-Chair:	K. Kato (Niigata Univ.)
Members:	S. Aramaki (Mitsubishi Chemical Group Sci. & Tec. Res. Center, Inc. (MCRC)) S. Aratani (Hitachi, Ltd.) K. Fujita (Kyushu Univ.) S. F. Horng (ITRI) K. Kudo (Chiba Univ.) Y. Majima (Tokyo Tech.) K. Nomoto (Sony Corp.) T. Someya (Univ. of Tokyo) C. K. Song (Dong-A Univ.)

[ 11 ] Micro/Nano Electromechanical and Bio-Systems (Devices)

Chair:	H. Tabata (Univ. of Tokyo)
Co-Chair:	K. Ajito (NTT Corp.)
Members:	S. Antoranz Contera (Univ. of Oxford) O. Nakagawara (Murata Manufacturing Co., Ltd.) T. Nishimoto (Shimadzu Corp.) M. Niwano (Tohoku Univ.) M. Sasaki (Toyota Technological Inst.) K. Sawada (Toyohashi Univ. of Tech.) I. Yamashita (Nara Inst. of Sci. and Tech.) Y. S. Yang (National Chiao Tung Univ.)

[ 12 ] Spintronic Materials and Devices

Chair:	M. Tanaka (Univ. of Tokyo)
Co-Chair:	K. Ando (AIST)
Members:	K. Inomata (NIMS) K. Itoh (Keio Univ.) T. W. Kang (Dongguk Univ.) H. Munekata (Tokyo Tech.) Y. Ohno (Tohoku Univ.) Y. Saito (Toshiba Corp.) S. Sugahara (Tokyo Tech.)

[ 13 ] Applications of Nanotubes and Nanowires

Chair:	K. Matsumoto (Osaka Univ.)
Co-Chair:	K. Ishibashi (RIKEN)
Members:	S. Akita (Osaka Prefecture Univ.) Y. Awano (Fujitsu Labs. Ltd.) Y. Homma (Tokyo Univ. of Sci.) S. Maruyama (Univ. of Tokyo) J. Motohisa (Hokkaido Univ.) Y. Ochiai (JST) Y. Ohno (Nagoya Univ.) K. Tateno (NTT Coup.) L. E. Wernersson (Lund Univ.)