SCOPE

CORE AREAS

Area 1

Advanced Gate Stack/Si Processing Science
(Chair: Y. Nara, Selete)

This subcommittee covers all the innovative front-end-ofline process technologies and sciences for advanced silicon-based LSI devices. Not only the gate stack technology but all the new concepts on Si-based front-end process technologies are welcome. Papers are solicited in the following areas (but are not limited to these areas):(1) advanced gate stack technologies, such as a SiON gate insulator, high-k gate insulator, and metal gate technologies, including device integration technology;(2) front-end-of-line process technologies that break through the scaling limit, such as a low-temperature process, shallow junction formation, novel diffusion/oxidation, and high-precision etching; (3) reliability physics and analysis; and (4) characterization and modeling of a Si process.

Invited Speakers:
"Understanding of the Degradation and Breakdown of Sub-
1nm EOT High k/Metal Gate Transistors"
G. Groeseneken (IMEC, Belgium)
"High-resolution RBS Analysis of Si-dielectrics Interfaces"
K. Kimura (Kyoto Univ., Japan)
Further invited speakers will be added.

Area 2

Characterization and Materials Engineering for Interconnect Integration
(Chair: S. Ogawa, Matsushita Electric)

Technologies and sciences that cover a Si back-end-ofline process are discussed, including package technology. Low-k materials have been in practical use; however, they brought new, difficult issues with decreasing in size, especially in reliability and package areas, and these areas require different ideas from conventional interconnect in characterization, material, and process/structure technologies. Papers are solicited in the following areas(but are not limited to these areas): (1) characterization methodology for materials, mechanical and electrical properties in small geometry, metrology and yield improvement; (2) materials and process technologies for advanced Cu/Low-k interconnect, including new dielectric and metal formation, planarization, and etching; (3)reliability phenomena and physics, such as EM, SIV, TDDB, and modeling/prediction; (4) packaging for Cu/Low-k chips; (5) new concepts and materials for future interconnects, such as a 3-D structure, a CNT interconnect, and wireless applications. A special session focused on advanced Cu/Low-k technologies is scheduled to highlight this area through unit processes, characterization, up to reliability.

Invited Speakers:
"New Method of Probing Barrier Integrity and Low-k Stability"
C. U. Kim (U. T. Arlington, USA)
"Carbon Nanotube via Technologies for Advanced Interconnect Integration"
M. Nihei (Fujitsu, Japan)
"Si Nano-photonics for LSI On-chip Optical Interconnection"
K. Nishi (NEC, Japan)
"3D System Integration: Enabling Technologies and Applications"
P. Ramm (Fraunhofer IZM, Germany)
"Reliability Challenges for Advanced Copper Low-k Interconnects"
Z. Tokei (IMEC, Belgium)
"Challenges of Cu Metallization for 45nm and Beyond"
M. H. Tsai (TSMC, Taiwan)
"Defects in Electroplated Cu and their Impact on Stress Migration Reliability"
A. Uedono (Univ. of Tsukuba, Japan)
"Design of New Ultra Low-dielectric Materials and Characterization"
D. Y. Yoon (Seoul National Univ., Korea)

Area 3

CMOS Devices/Device Physics
(Chair: K. Shibahara, Hiroshima Univ.)

The aim of this area is to discuss advanced silicon device technologies and physics. Papers are solicited in the following areas: (1) sub-100-nm silicon CMOS devices and their integration technologies; (2) performance enhancement technologies, such as a strained-silicon channel and SiGe and Ge channels; (3) post-bulk-planar silicon device structures, including planar SOI, FinFET, and double gate FET; (4) device physics of advanced CMOS, including simulation and modeling on carrier transport and reliability; and (5) manufacturing and yield science.

Invited Speakers:
"Simulation of Atomic Scale Effects and Fluctuations in Nano-scale CMOS"
A. Asenov (Univ. of Glasgow, UK)
"Direct Silicon Bond (DSB) Mixed Orientation Substrates for High Performance Bulk CMOS Technology"
C.Y. Sung (IBM, USA)
"Sub-10-nm CMOS Devices"
H. Wakabayashi (NEC, Japan)
"MOSFET Performance Enhancement Using Latticemismatched Source/Drain Materials"
Y.-C. Yeo (National Univ. of Singapore, Singapore)

Area 4

Advanced Memory Technology
(Chair: A. Nitayama, Toshiba)

Advanced memory technologies are very much expected to explosively evolve SoC devices and digital information technologies toward "high speed and high density, broadband and mobile." Papers are solicited in the area of all advanced volatile or nonvolatile memory devices, such as DRAM, flash (including SONOS and nanocrystal devices), FeRAM, MRAM, phase change RAM, resistance RAM, one time programming memory, 3-D memory, and others. Topics include cell device physics and characterization, process integration and materials, tunneling dielectrics, ferroelectric and ferromagnetic materials, reliability, failure analysis, quality assurance and testing, modeling and simulation, process control and yield enhancement, integrated circuits, new concept memories, and new applications and systems (solid state disks, memory cards, programmable logic, etc.).

Invited Speakers:
"Overview and Future Challenges of Floating Gate Flash Technologies"
F. Arai (Toshiba, Japan)
"Overview and Future Challenge of FeRAM Technologies"
Y. Kato (Matsushita Electric, Japan)
"Mechanisms of Resistance Switchig Memory Effect in Oxides"
M. Kawasaki (Tohoku Univ., Japan)
"Overview and Future Challenges of e-DRAM Technologies"
H. Sugimura (NEC, Japan)

Area 5

Advanced Circuits and Systems
(Chair: H. Kobayashi, Gunma Univ.)

Original papers bridging the gap between materials, devices, circuits, and systems in Si-ULSI, including SiGe, are solicited in subject areas that include, but not limited to the following: (1) advanced digital, analog, mixedsignal circuits as well as memory; (2) high-speed and high-frequency circuits; (3) wireless, wireline, and optical communication circuits; (4) power management technology; (5) interconnection design for communication inside a chip as well as among chips; (6) technologies for systems on a chip (SoC) and system in a package (SiP); and (7) LSI testing technology.

Invited Speaker:
"A Practical, Systematic, Simple Method to Evaluate Speed/Bandwidth Potential of CMOS Processes for Analog Design and Related Practical Considerations"
K. Hadidi (Urmia Univ., Iran)
Further invited speakers will be added.

Area 6

Compound Semiconductor Circuits, Electron Devices and Device Physics
(Chair: M. Kuzuhara, Univ. of Fukui)

This session covers all aspects of advanced electron device and IC technologies based on compound semiconductors, including III-V, III-N, SiC, and other materials. Papers are solicited in the following areas: (1)FETs, HFETs, HBTs, and other novel device structures;(2) high-voltage or high-temperature electron devices and circuits; (3) microwave and millimeter-wave amplifiers, oscillators, switches, and other ICs; (4) high-speed digital ICs and mixed-signal ICs; (5) theory and physics of electron devices; (6) characterization techniques for devices and ICs; (7) innovative device processing and packaging; (8) reliability issues; and (9) novel applications utilizing compound semiconductor devices and circuits. Contributions related to other interesting topics are also welcome.

Invited Speakers:
"Methods and Mechanisms for Ohmic Contacts on AlGaN/GaN HEMTs"
I. Adesida (Univ. of Illinois, USA)
"Recent Advances in GaN Power Devices"
T. Kachi (Toyota Central R&D Labs., Japan)
"Diamond-and GaN-based Electronics"
E. Kohn (Univ. Ulm, Germany)
"InP-based High-speed Transistors and their IC Applications"
K. Murata (NTT, Japan)

Area 7

Photonic Devices and Device Physics
(Chair: M. Sugawara, Fujitsu Labs.)

The scope of this subcommittee covers all aspects of emerging technologies in active, passive, and integrated optoelectronic and photonic devices as well as device physics, which include: (1) laser diodes, LEDs, photodetectors, SOAs, and OEICs; (2) quantum nanostructure optical devices including quantum wells, quantum wires, or quantum dots; (3) photonic crystal materials and novel functional devices; (4) optical switches, modulators, and MEMS; (5) optical wavelength converters, nonlinear optical devices, and all-optical switches; (6) waveguide components, PLCs and integrated photonic circuits; (7) material and device processing and characterization techniques; (8) hybrid and monolithic integration, packaging and moduling; (9) optical communication, interconnection and signal processing applications of optoelectronic and photonic devices; (10)linear and nonlinear optical properties, electronic band structures, and the relaxation mechanism of quantum nanostructures; and (11) novel phenomena and applications including slow light, fast light, optical memory, and optoelectronic tweezers, etc. A special session focused on "Photonic crystals and Si nanophotonics" is scheduled to highlight this area through their concept, design, fabrication processes, and devices.

Invited Speakers:
"Control of Light Emission and Propagation in Semiconductor Photonic Nanostructures"
T. Baba (Yokohama National Univ., Japan)
"Self-Assembled Quantum Dots: Engineered Gain Medium"
S. Oktyabrsky (Univ. at Albany-SUNY, USA)
"Single-photon Generators for Telecom Applications"
. Usuki (Univ. of Tokyo, Japan)
"Optoelectronic Tweezers: Optical Manipulation Using LEDs and Spatial Light Modulators"
M. C. Wu (Univ. of California, Berkeley, USA)
"Fabrication of Sb-based QDs Structures for Longwavelength VCSELs"
N. Yamamoto (National Inst. of Information and
Communications Technology, Japan)
Further invited speakers will be added.

Area 8

Advanced Material Synthesis and Crystal Growth Technology
(Chair: H. Yamaguchi, NTT)

The scope of this subcommittee covers all kinds of synthesis, growth, and fabrication techniques of not only semiconducting but also novel functional materials and structures, including spintronic materials, nitride compounds, CNT, nanowires and nanoparticles, etc. The principle idea is to enhance mutual communication among people in different committees to share knowledge of commonly important key technologies in fabrication processes. Specific scopes are, but not limited to, the following: (1) novel material systems and structures; (2)materials and structures for spintronics; (3) nitride-related compound semiconductors; (4) novel synthesis, growth, and fabrication techniques; (5) carbon nanotubes; (6)nanowires and nanoparticles; (7) microscale- and nanoscale 3-D structures and mechanical systems; (8)characterization of fundamental properties.

Invited Speakers:
"Probing Carbon Nanostructures Growth Mechanism Using an In-situ UHVTEM"
Y.-L. Foo (Inst. of Materials Research and Engineering,
Singapore)
"Functions and Device Applications of Quantum-sized Silicon"
N. Koshida (Tokyo Univ. of Agri. and Tech., Japan)
"Fabrication and Properties of GaN-based Quantum Dots, Disks and Wires with Novel Electronic Properties"
K. H. Ploog (Paul Drude Inst., Germany)
"Catalyst-free Metal-organic Chemical Vapor Deposition of ZnO Nanorods and their Device Applications"
G.-C. Yi (POSTECH, Korea)

Area 9

Physics and Applications of Novel Functional Materials and Devices
(Chair: Y. Takahashi, Hokkaido Univ.)

This session covers applications and physics of novel functional devices and quantum nanostructures that are made mainly by using nanofabrication technology or selforganized phenomena. Papers are solicited in the following areas (but are not limited to these areas): (1)quantum phenomena in nanostructures; (2) quantum dots and single-electron devices; (3) solid-state quantum computing and communications; (4) spintronics; (5)carbon nanotube devices; (6) nanometer-scale characterization, such as SPM and SNOM, other novel devices, such as small superconducting devices, and resonant tunneling devices in nanoscale.

Invited Speakers:
"Single-photon Detectors Based on Quantum Dots Devices"
B. Kardynal (Toshiba Research Europe, UK)
"Nanowire Field Effect Transistor"
L.-E. Wernersson (Lund Univ., Sweden)
"Single-Crystal Nanowire Transistor for Future Logic and Memory Applications"
B. Yu (NASA Ames Research Center, USA)
Further invited speakers will be added.