Invited Speakers
Area 1 Advanced CMOS: Material Science / Process Engineering / Device Technology
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Value Proposition of Vertical Transistor for Future’s Logic Applications: Symmetry, Drivability and Routability
Yanbang Chu
Peking Univ., China
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Material-Driven Device-Level Thermal Management Strategies
Chang-Seok Lee
Samsung Advanced Institute of Tech., Korea
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Holistic System and Technology Co-Optimization for High-Performance Edge AI Computing Platforms
Youseok Suh
Qualcomm, USA
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Carrier Relaxation and Transport in Cryogenic CMOS Devices
Ken Uchida
The Univ. of Tokyo, Japan
Area 2 Advanced and Emerging Memories / New Applications
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Analysis of OTS Switching Mechanisms and Memory Characteristics via DFT-informed Stochastically Induced Defect Percolation Model
Hyunsang Hwang
POSTECH, Korea
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Bandgap-Engineered Gate Stack Using BN-Based Dielectric for 3D V-NAND Flash Memory
Dae Hyun Kang
KAIST, Korea
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Advanced MTJ Scaling Technologies for High-Density STT-MRAM
Masahiko Nakayama
Kioxia Corp., Japan
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Towards Bio‑Inspired Edge Intelligence: Precise Analog‑Flash Programming for Reconfigurable Event‑Driven Circuits and Analog Gated Recurrent Units
Sheng-Yu Peng
National Yang Ming Chiao Tung University, Taiwan
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Property design of HfO2-and AlN-based ferroelectric films for
memory applications
Hiroshi Funakubo
Science Tokyo, Japan
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High-density and Low-power 3D DRAM technology by Oxide-semiconductor Channel Transistor DRAM (OCTRAM)
Fumiya Kimura
Kioxia Corp., Japan
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Device-to-Package Co-Design of Vertically Integrated FeRAM for Efficient AI Memory
Vijaykrishnan Narayanan
The Pennsylvania State Univ., USA
- Design Strategies for Radiation-Hard FeFET Memories through Interface, Channel, and HfZrOx Composition Engineering Yung-Hsien Wu National Tsing Hua Univ., Taiwan
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Energy-Efficient MTJ-based Probabilistic Ising Processors: Device, Architecture, and Scaling
Hyunsoo Yang
National Univ. of Singapore, Singapore
- Polarization Switching Dynamics of Integrated Ferroelectric DRAM Capacitors Michael Hoffmann Ferroelectric Memory Company, USA
Area 3 Heterogeneous and 3D Integration / Interconnect / MEMS
- The properties of SnO2 as a channel layer for advanced semiconductor device (tentative) Hyeongtag Jeon Hanyang Univ., Korea
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Perspectives of CoSn kagome metal as anisotropic conductor for advanced interconnects
Tomoya Nakatani
NIMS, Japan
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Gas-responsive Luminescent Metal−Organic Framework
Haruka Yoshino
Tohoku Univ., Japan
Area 4 Power / High‐speed Devices and Materials
- Vertical GaN devices, and implantation technology for vertical GaN Tetsu Kachi Nagoya Univ., Japan
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World first free-standing (111) heteroepitaxial diamondwithout twin grown on Sapphire substrate
Seong-Woo Kim
Orbray Co., Ltd., Japan
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Extrinsic regrown base for fine emitter InP HBTs with low base-collector capacitance
Yasuyuki Miyamoto
Science Tokyo
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Recent Status in GaN/SiC-based Hybrid HEMT Technologies
Akira Nakajima
AIST, Japan
- Performance Enhancement of GaN Power Electronics for Harsh Environment Applications Shu Yang Univ. of Science and Technology of China, China
Area 5 Photonics: Devices / Integration / Related Technology
- Neural Network Computing Leveraging Silicon Photonic Integrated Circuit and Photonic-Electronic Fusion Toward Streaming Processors Guangwei Cong AIST, Japan
- TBA Gong-Ru Lin National Taiwan Univ., Taiwan
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Hybrid integrated nanophotonic devices assembled by transfer printing
Yasutomo Ota
Keio Univ., Japan
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Tunable and Reconfigurable Metaoptics
Jing Hua Teng
A*STAR, Singapore
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Room-temperature telecom-band optical devices based on InP/InAs nanowires
Guoqiang Zhang
NTT Basic Research Laboratories, Japan
Area 6 Energy Harvesting and Converting Devices and Materials
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Development of Solid-State Electrochemical Thermal Transistors
Hiromichi Ohta
Hokkaido Univ., Japan
- Gamma-ray tolerant, ultrathin flexible perovskite solar cells for space applications Hiroaki Jinno JAXA, Japan
- Future Prospects of III-V Compound Thin-Film Multi-junction Solar Cells Tatsuya Takamoto Univ. of Miyazaki, Japan
Area 7 Organic / Molecular / Bio‐electronics
- Materials and Process Technologies for the Commercialization of Perovskite Solar Cells Takurou Murakami AIST
- Microneedles for Electrochemical Sensing Wonhyoung Ryu Yonsei Univ., Korea
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MicroLED-Based Neural Interfaces for Spatially Resolved Optogenetic Stimulation and Recording
Hiroto Sekiguchi
Meijo Univ.
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Development of Polymer-Blend Organic Electrochemical Transistors Based on Structure–Property Relationships
Shunsuke Yamamoto
Kyoto Univ.
Area 8 Low Dimensional Devices and Materials
- High-transconductance MoS2 Top-gate Transistors Enabled by Epitaxial Interface Engineering Wen-Hao Chang Academia Sinica, Taiwan
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Subband, moiré, and symmetry engineering using van der Waals junctions of 2D materials
Tomoki Machida
The Univ. of Tokyo, Japan
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Supersolid crystals of dipolar excitons in a lattice
Corentin Morin
CNRS, France
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Growth of 2-Dimensional Quantum-Dot Network Structures by MBE and Their Optoelectronic Characteristics
Koichi Yamaguchi
The Univ. of Electro-Communications, Japan
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Probing Sub-Picosecond Optical-to-Electrical Conversion in Two-Dimensional Materials Using On-Chip Terahertz Electronics
Katsumasa Yoshioka
NTT BRL, Japan
Area 9 Novel Functional / Quantum / Spintronic Devices and Materials
- Efficient spin-charge conversion at room temperature with ferroelectrics: Enabling FESO Manuel Bibes CNRS / Thales / Univ. Paris-Saclay, France
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Design and Control of Silicon Spin Qubit Devices for Scalable Quantum Computing
Takashi Nakajima
RIKEN, Japan
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Ionics and Spintronics-based Reservoir Computing
Wataru Namiki
NIMS, Japan
Area 10 Thin Film Electronics: Oxide / Non‐single Crystalline / Novel Process
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Unlocking New Possibilities of Energy-Efficient Computing Hardware through Oxide Semiconductor Technology
Xiao Gong
National Univ. of Singapore, Singapore
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Potential of Si-Compatible Group-IV Thin Films for Low-Temperature Thermoelectric Applications
Masashi Kurosawa
Nagoya Univ., Japan
- Electrical Characteristics of Enhancement-mode Ultra-Thin InGaSnOx (IGTO) Channel Thin-Film Transistors Chun-Hsiung Lin National Yang Ming Chiao Tung Univ., Taiwan
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Recent progress in diamond MOSFET technology
Norio Tokuda
Kanazawa Univ., Japan
Area 11 Advanced Materials: Synthesis / Crystal Growth / Characterization
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Single Crystals of Graphene, Graphene Nanoribbons, and hBN on Ge and Ge-on-Si via Chemical Vapor Deposition and Related Device Applications
Michael Arnold
Univ. of Wisconsin–Madison, USA
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Study on Intrinsic Point Defects in n-type GaN Formed by Ion Implantation and Electron-Beam Irradiation
Masahiro Horita
Nagoya Univ., Japan
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Interface engineering for high-performance energy harvesting material
Takafumi Ishibe
Osaka Univ., Japan
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Contact Scaling for Si and Ge Nanosheet Devices: Recent Source/Drain Epitaxy and Contact Developments
Clement Porret
imec, Belgium
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Epitaxy growth of 2D p-type semiconductors with continuous crystallinity on
amorphous dielectric
Vincent Tung
The Univ. of Tokyo, Japan
Area 12 Advanced and Innovative Circuits / Systems Interacting with Devices and Materials
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Development of Scalable Highly Integrated Quantum Bit Error Correction System
Kazutoshi Kobayashi
Kyoto Inst. of Technology, Japan
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Integrated Cryo-CMOS Circuit Systems for Quantum Computing
Jae-Yoon Sim
POSTECH, Korea
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Optically-powered microelectronics platform for IoT and Biomedical
applications
Takashi Tokuda
Science Tokyo, Japan
Invited Speakers
- Area 1 Advanced CMOS: Material Science / Process Engineering / Device Technology
- Area 2 Advanced and Emerging Memories / New Applications
- Area 3 Heterogeneous and 3D Integration / Interconnect / MEMS
- Area 4 Power / High‐speed Devices and Materials
- Area 5 Photonics: Devices / Integration / Related Technology
- Area 6 Energy Harvesting and Converting Devices and Materials
- Area 7 Organic / Molecular / Bio‐electronics
- Area 8 Low Dimensional Devices and Materials
- Area 9 Novel Functional / Quantum / Spintronic Devices and Materials
- Area 10 Thin Film Electronics: Oxide / Non‐single Crystalline / Novel Process
- Area 11 Advanced Materials: Synthesis / Crystal Growth / Characterization
- Area 12 Advanced and Innovative Circuits / Systems Interacting with Devices and Materials