Invited Speakers
Area 1 Advanced CMOS: Material Science / Process Engineering / Device Technology
-
Value Proposition of Vertical Transistor for Future’s Logic Applications: Symmetry, Drivability and Routability
Yanbang Chu
Peking Univ., China
-
Material-Driven Device-Level Thermal Management Strategies
Chang-Seok Lee
Samsung Advanced Institute of Tech., Korea
- Holistic System and Technology Co-Optimization for High-Performance Edge AI Computing Platforms Youseok Suh Qualcomm, USA
Area 2 Advanced and Emerging Memories / New Applications
-
Analysis of OTS Switching Mechanisms and Memory Characteristics via DFT-informed Stochastically Induced Defect Percolation Model
Hyunsang Hwang
POSTECH, Korea
-
Bandgap-Engineered Gate Stack Using BN-Based Dielectric for 3D V-NAND Flash Memory
Dae Hyun Kang
KAIST, Korea
-
Advanced MTJ Scaling Technologies for High-Density STT-MRAM
Masahiko Nakayama
Kioxia Corp., Japan
- Towards Bio‑Inspired Edge Intelligence: Precise Analog‑Flash Programming for Reconfigurable Event‑Driven Circuits and Analog Gated Recurrent Units Sheng-Yu Peng National Yang-Ming Univ. of National Chiao Tung, China
-
Property design of HfO2-and AlN-based ferroelectric films for
memory applications
Hiroshi Funakubo
Science Tokyo, Japan
-
High-density and Low-power 3D DRAM technology by Oxide-semiconductor Channel Transistor DRAM (OCTRAM)
Fumiya Kimura
Kioxia Corp., Japan
-
Device-to-Package Co-Design of Vertically Integrated FeRAM for Efficient AI Memory
Vijaykrishnan Narayanan
The Pennsylvania State Univ., USA
- Design Strategies for Radiation-Hard FeFET Memories through Interface, Channel, and HfZrOx Composition Engineering Yung-Hsien Wu National Tsing Hua Univ., Taiwan
-
Energy-Efficient MTJ-based Probabilistic Ising Processors: Device, Architecture, and Scaling
Hyunsoo Yang
National Univ. of Singapore, Singapore
- Polarization Switching Dynamics of Integrated Ferroelectric DRAM Capacitors Michael Hoffmann Ferroelectric Memory Company, USA
Area 3 Heterogeneous and 3D Integration / Interconnect / MEMS
Area 4 Power / High‐speed Devices and Materials
- Vertical GaN devices, and implantation technology for vertical GaN Tetsu Kachi Nagoya Univ., Japan
-
World first free-standing (111) heteroepitaxial diamondwithout twin grown on Sapphire substrate
Seong-Woo Kim
Orbray Co., Ltd., Japan
-
Extrinsic regrown base for fine emitter InP HBTs with low base-collector capacitance
Yasuyuki Miyamoto
Science Tokyo
-
Recent Status in GaN/SiC-based Hybrid HEMT Technologies
Akira Nakajima
AIST, Japan
- Performance Enhancement of GaN Power Electronics for Harsh Environment Applications Shu Yang Univ. of Science and Technology of China, China
Area 5 Photonics: Devices / Integration / Related Technology
- Neural Network Computing Leveraging Silicon Photonic Integrated Circuit and Photonic-Electronic Fusion Toward Streaming Processors Guangwei Cong AIST, Japan
- TBA Gong-Ru Lin National Taiwan Univ., Taiwan
-
Hybrid integrated nanophotonic devices assembled by transfer printing
Yasutomo Ota
Keio Univ., Japan
-
Tunable and Reconfigurable Metaoptics
Jing Hua Teng
A*STAR, Singapore
-
Room-temperature telecom-band optical devices based on InP/InAs nanowires
Guoqiang Zhang
NTT Basic Research Laboratories, Japan
Area 6 Energy Harvesting and Converting Devices and Materials
-
Development of Solid-State Electrochemical Thermal Transistors
Hiromichi Ohta
Hokkaido Univ., Japan
- Gamma-ray tolerant, ultrathin flexible perovskite solar cells for space applications Hiroaki Jinno JAXA, Japan
- Future Prospects of III-V Compound Thin-Film Multi-junction Solar Cells Tatsuya Takamoto Univ. of Miyazaki, Japan
Area 7 Organic / Molecular / Bio‐electronics
- Development of High-Durability and Low-Cost Technologies for the Practical Application of Perovskite Solar Cells Takurou Murakami AIST
- Microneedles for Electrochemical Sensing Wonhyoung Ryu Yonsei Univ., Korea
-
MicroLED-Based Neural Interfaces for Spatially Resolved Optogenetic Stimulation and Recording
Hiroto Sekiguchi
Meijo Univ.
-
Development of Polymer-Blend Organic Electrochemical Transistors Based on Structure–Property Relationships
Shunsuke Yamamoto
Kyoto Univ.
Area 8 Low Dimensional Devices and Materials
- High-transconductance MoS2 Top-gate Transistors Enabled by Epitaxial Interface Engineering Wen-Hao Chang Academia Sinica, Taiwan
-
Subband, moiré, and symmetry engineering using van der Waals junctions of 2D materials
Tomoki Machida
The Univ. of Tokyo, Japan
-
Supersolid crystals of dipolar excitons in a lattice
Corentin Morin
CNRS, France
-
Growth of 2-Dimensional Quantum-Dot Network Structures by MBE and Their Optoelectronic Characteristics
Koichi Yamaguchi
The Univ. of Electro-Communications, Japan
-
Probing Sub-Picosecond Optical-to-Electrical Conversion in Two-Dimensional Materials Using On-Chip Terahertz Electronics
Katsumasa Yoshioka
NTT BRL, Japan
Area 9 Novel Functional / Quantum / Spintronic Devices and Materials
Area 10 Thin Film Electronics: Oxide / Non‐single Crystalline / Novel Process
-
Unlocking New Possibilities of Energy-Efficient Computing Hardware through Oxide Semiconductor Technology
Xiao Gong
National Univ. of Singapore, Singapore
- TBD Masashi Kurosawa Nagoya Univ., Japan
- Electrical Characteristics of Enhancement-mode Ultra-Thin InGaSnOx (IGTO) Channel Thin-Film Transistors Chun-Hsiung Lin National Yang Ming Chiao Tung Univ., Taiwan
-
Recent progress in diamond MOSFET technology
Norio Tokuda
Kanazawa Univ., Japan
Area 11 Advanced Materials: Synthesis / Crystal Growth / Characterization
- TBA Michael Arnold Univ. of Wisconsin–Madison, USA
- TBA Masahiro Horita Nagoya Univ., Japan
-
Interface engineering for high-performance energy harvesting material
Takafumi Ishibe
Osaka Univ., Japan
-
Contact Scaling for Si and Ge Nanosheet Devices: Recent Source/Drain Epitaxy and Contact Developments
Clement Porret
imec, Belgium
-
Epitaxy growth of 2D p-type semiconductors with continuous crystallinity on
amorphous dielectric
Vincent Tung
The Univ. of Tokyo, Japan
Area 12 Advanced and Innovative Circuits / Systems Interacting with Devices and Materials
-
Development of Scalable Highly Integrated Quantum Bit Error Correction System
Kazutoshi Kobayashi
Kyoto Inst. of Technology, Japan
-
Integrated Cryo-CMOS Circuit Systems for Quantum Computing
Jae-Yoon Sim
POSTECH, Korea
-
Optically-powered microelectronics platform for IoT and Biomedical
applications
Takashi Tokuda
Science Tokyo, Japan
Invited Speakers
- Area 1 Advanced CMOS: Material Science / Process Engineering / Device Technology
- Area 2 Advanced and Emerging Memories / New Applications
- Area 3 Heterogeneous and 3D Integration / Interconnect / MEMS
- Area 4 Power / High‐speed Devices and Materials
- Area 5 Photonics: Devices / Integration / Related Technology
- Area 6 Energy Harvesting and Converting Devices and Materials
- Area 7 Organic / Molecular / Bio‐electronics
- Area 8 Low Dimensional Devices and Materials
- Area 9 Novel Functional / Quantum / Spintronic Devices and Materials
- Area 10 Thin Film Electronics: Oxide / Non‐single Crystalline / Novel Process
- Area 11 Advanced Materials: Synthesis / Crystal Growth / Characterization
- Area 12 Advanced and Innovative Circuits / Systems Interacting with Devices and Materials