Invited Speakers
Area 1 Advanced CMOS: Material Science / Process Engineering / Device Technology
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Cryogenic characterization of advanced FDSOI devices for quantum computing applications
Bruna Cardoso-Paz
Quobly, France
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Demonstration of single-channel WSe2 CMOS devices and circuits
Takamasa Kawanago
SFRC, AIST, Japan
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Modeling of Transistor and Interconnect Technologies Targeting Next Generation Logic GAA and CFET Nodes
Ashish Pal
AMAT, USA
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Challenges and Opportunities in CFET-Based SRAM Design
Vita Pi-Ho Hu
National Taiwan Univ., Taiwan
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Oxide Semiconductors for Future DRAM and Monolithic 3D Integration
Jianshi Tang
Tsinghua Univ., China
Area 2 Advanced and Emerging Memories / New Applications
- Emerging Ferroelectric Materials for Next-Generation Memory and In-Memory Computing Genquan Han Xidian Univ., China
- 22nm FDSOI Hf0.5Zr0.5O2 FeRAM Demonstration for Embedded Applications: from Ferroelectric Capacitors to FeRAM Arrays Simon Martin CEA-Leti, France
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Emerging Trends in MTJ-Based Nonvolatile Logic LSI Technology
Masanori Natsui
Tohoku Univ., Japan
- Recent progress in materials design for voltage-controlled magnetic random access memory Takayuki Nozaki AIST, Japan
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Horizontal Channel Flash to Explore the Limits of 3D Flash Memory
Minoru Oda
Kioxia Corp., Japan
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HfO2-based Ferroelectric Devices for Edge AI Application
Jun Okuno
Sony Semiconductor Solutions Corp., Japan
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Recent Advances and Outlook on Ferroelectric NAND Technology
Sijung Yoo
Samsung Electronics, Korea
Area 3 Heterogeneous and 3D Integration / Interconnect / MEMS
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COW Integration Technology for Capacitor Embedded 3D Functional Interposer
Tatsuya Funaki
Murata Manufacturing Co., Ltd., Japan
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Pay more attention to development other than power devices: Its importance in commercializing new devices
Ken Nakahara
ROHM, Japan
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Optically-Powered Microelectronic Systems with Heterogeneous Integration
Takashi Tokuda
Institute of Science Tokyo, Japan
Area 4 Power / High‐speed Devices and Materials
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Recent progress in GeO2: bulk, thin film crystal growth, and devices
Kentaro Kaneko
Ritsumeikan Univ.
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Consideration on 4H-SiC surface nitridation reactions for designing more efficient SiO2/SiC interface defect passivation processes
Koji Kita
The Univ. of Tokyo, Japan
- THz Plasmonic Detectors Based on Grating-Gate InGaAs-Channel High-Electron-Mobilitiy Transistors Akira Satou Tohoku Univ., Japan
- High performance gallium oxide devices: status and challenges Uttam Singisetti Univ. at Buffalo, USA
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Application/Reliability-Driven Device Design of GaN Power Switches
Zhikai Tang
Texas Instruments, USA
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Overcoming Dynamic Instabilities in GaN Power Devices
Jin Wei
Peking Univ., China
Area 5 Photonics: Devices / Integration / Related Technology
- Unified Coherent Receiver for Space-Wavelength-Division Multiplexing Haoshuo Chen Nokia Bell Labs, USA
- High density CPO based on Si photonics technology Masaki Kato Marvell Technology, USA
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Simultaneous Deep-UV Raman and Photoluminescence Microscopy for Nanoscale Materials Characterization
Atsushi Taguchi
Hokkaido Univ., Japan
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Silicon Photonic MEMS-based Tunable Optical Elements and their Applications to Coherent Ising Machines
Kyoungsik Yu
KAIST, Korea
Area 6 Energy Harvesting and Converting Devices and Materials
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Calcium Titanate Doped with Several Elements for Efficient Photocatalytic Hydrogen Evolution
Shigeru Ikeda
Konan Univ., Japan
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Various Device Structures of Thermoelectric Systems for Specific Purposes
Woochul Kim
Yonsei Univ., Korea
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Low-cost strategies for III-V solar cells using hydride vapor phase epitaxy
Ryuji Oshima
AIST, Japan
Area 7 Organic / Molecular / Bio‐electronics
- Iridium Oxide Based Electrodes for Bio-Interface Applications Po-Chun Chen National Taipei Univ. of Technology, Taiwan
- Organic host dispersion-based perovskite nanocrystals light-emitting diodes Takayuki Chiba Yamagata Univ., Japan
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Molecular Neuromorphic Building Blocks for Artificial Intelligence
Sreetosh Goswami
Indian Institute of Science, India
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Magnetic Biosensors Based on Giant Magnetoresistance
Jung-Rok Lee
Ewha Womans Univ., Korea
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Single-walled Carbon Nanotubes Transparent Electrodes with p- and n-Doping for Organic and Perovskite Solar Cells
Yutaka Matsuo
Nagoya Univ., Japan
Area 8 Low Dimensional Devices and Materials
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Scalable 2D Memristors Heterointegration for Energy-Efficient Compute-in-Memory Hardware
Kah-Wee Ang
National Univ. of Singapore, Singapore
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Introduction of the new synchrotron radiation facility NanoTerasu and its application to nanomaterials
Koji Horiba
NIQST, Japan
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Growth and Application of Quantum Dot Lasers for Silicon Photonic Integrated Circuits
Jinkwan Kwoen
U Tokyo, Japan
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Interfaces in Semiconductor Devices Based on Low-dimensional Materials: The Case of Flexible Carbon Nanotube TFTs and Analog ICs
Yutaka Ohno
Nagoya Univ., Japan
Area 9 Novel Functional / Quantum / Spintronic Devices and Materials
Area 10 Thin Film Electronics: Oxide / Non‐single Crystalline / Novel Process
- Nanosheet Oxide Semiconductor Transistors for 3D integrated devices Masaharu Kobayashi The Univ. of Tokyo, Japan
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Developing high-performance p-type oxide TFTs and circuits
Ao Liu
Univ. of Electronic Science and Technology of China, China
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Carrier mobility enhancement of extremely-thin body Ge-On-Insulator (GOI) MOSFETs
Shinichi Takagi
The Univ. of Tokyo, Japan
Area 11 Advanced Materials: Synthesis / Crystal Growth / Characterization
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Chemical Vapor Deposition of Single Crystal Graphene, Graphene Nanoribbons, and hBN on Ge and Ge-on-Si and Related Device Applications
Micheal Arnold
Univ. of Wisconsin-Madison, USA
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Recent Advances in ScAlN/GaN-based High Electron Mobility Transistors
Takuya Maeda
The Univ. of Tokyo, Japan
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Advanced Group-IV Epitaxy and Integration Strategies for GAA Nanosheet Transistor Performance Enhancement
Shogo Mochizuki
IBM Research, USA
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Operand Measurement of metal/insulator/semiconductor structures by Voltage-applied HAXPES
Hiroshi Nohira
Tokyo City Univ., Japan
- Challenges in Visualizing Buried Interfaces of Multi-Layered Thin-Film Structures for Applications: A Depth-Resolved and Spatiotemporal Big Data Analysis Approach Based on Angle-Resolved XPS Satoshi Toyoda Scienta Omicron, Japan
Area 12 Advanced and Innovative Circuits / Systems Interacting with Devices and Materials
Invited Speakers
- Area 1 Advanced CMOS: Material Science / Process Engineering / Device Technology
- Area 2 Advanced and Emerging Memories / New Applications
- Area 3 Heterogeneous and 3D Integration / Interconnect / MEMS
- Area 4 Power / High‐speed Devices and Materials
- Area 5 Photonics: Devices / Integration / Related Technology
- Area 6 Energy Harvesting and Converting Devices and Materials
- Area 7 Organic / Molecular / Bio‐electronics
- Area 8 Low Dimensional Devices and Materials
- Area 9 Novel Functional / Quantum / Spintronic Devices and Materials
- Area 10 Thin Film Electronics: Oxide / Non‐single Crystalline / Novel Process
- Area 11 Advanced Materials: Synthesis / Crystal Growth / Characterization
- Area 12 Advanced and Innovative Circuits / Systems Interacting with Devices and Materials