Invited Speakers
Area 1 Advanced CMOS: Material Science / Process Engineering / Device Technology
Area 2 Advanced and Emerging Memories / New Applications
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Analysis of OTS Switching Mechanisms and Memory Characteristics via
DFT-informed Stochastically Induced Defect Percolation Model
Hyunsang Hwang
POSTECH, Korea
-
Bandgap-Engineered Gate Stack Using BN-Based Dielectric for 3D V-NAND Flash
Memory
Dae Hyun Kang
KAIST, Korea
-
Advanced MTJ Scaling Technologies for High-Density STT-MRAM
Masahiko Nakayama
Kioxia Corp., Japan
- TBA Sheng-Yu Peng National Yang-Ming Univ. of National Chiao Tung, China
-
Property design of HfO2-and AlN-based ferroelectric films for
memory applications
Hiroshi Funakubo
Science Tokyo, Japan
-
High-density and Low-power 3D DRAM technology by Oxide-semiconductor Channel
Transistor DRAM (OCTRAM)
Fumiya Kimura
Kioxia Corp., Japan
-
Stacked 3D Ferroelectric Memories: Architectural Implications
Vijaykrishnan Narayanan
The Pennsylvania State Univ., USA
- TBA Yung-Hsien Wu National Tsing Hua Univ., Taiwan
-
MRAM based probabilistic computing
Hyunsoo Yang
National Univ. of Singapore, Singapore
- TBA Michael Hoffmann Ferroelectric Memory Company, USA
Area 3 Heterogeneous and 3D Integration / Interconnect / MEMS
Area 4 Power / High‐speed Devices and Materials
- TBA Tetsu Kachi Nagoya Univ., Japan
-
World first free-standing (111) heteroepitaxial diamond without twin grown on
Sapphire substrate
Seong-Woo Kim
Orbray Co., Ltd., Japan
-
Extrinsic regrown base for fine emitter InP HBTs with low base-collector
capacitance
Yasuyuki Miyamoto
Science Tokyo
-
Recent status in GaN/SiC-based hybrid power device technologies
Akira Nakajima
AIST, Japan
- TBA Shu Yang Univ. of Science and Technology of China, China
Area 5 Photonics: Devices / Integration / Related Technology
- Neural Network Computing Using Silicon Photonic Integrated Circuit Guangwei Cong AIST, Japan
- TBA Gong-Ru Lin National Taiwan Univ., Taiwan
- Transfer Printing for Advanced Photonic Integration Yasutomo Ohta Keio Univ., Japan
-
Tunable and Reconfigurable Metaphotonics
Jing Hua Teng
A*STAR, Singapore
-
CMOS-compatible bottom-up telecom nanowire lasers
Guoqiang Zhang
NTT Basic Research Laboratories, Japan
Area 6 Energy Harvesting and Converting Devices and Materials
Area 7 Organic / Molecular / Bio‐electronics
- Development of High-Durability and Low-Cost Technologies for the Practical Application of Perovskite Solar Cells Takurou Murakami AIST
- TBA Wonhyung Ryu Yonsei Univ., Korea
-
MicroLED-Based Neural Interfaces for Spatially Resolved Optogenetic Stimulation and Recording
Hiroto Sekiguchi
Meijo Univ.
-
Development of Polymer-Blend Organic Electrochemical Transistors Based on Structure–Property Relationships
Shunsuke Yamamoto
Kyoto Univ.
Area 8 Low Dimensional Devices and Materials
- TBA Wen-Hao Chang Academia Sinica, Taiwan
-
Subband electronics based on van der Waals tunnel junctions of 2D materials
Tomoki Machida
The Univ. of Tokyo, Japan
-
Supersolid crystals of dipolar excitons in a lattice
Corentin Morin
CNRS, France
-
Growth of 2-Dimensional Quantum-Dot Network Structures by MBE and Their Optoelectronic Characteristics
Koichi Yamaguchi
The Univ. of Electro-Communications, Japan
-
Probing Sub-Picosecond Optical-to-Electrical Conversion in Two-Dimensional Materials Using On-Chip Terahertz Electronics
Katsumasa Yoshioka
NTT BRL, Japan
Area 9 Novel Functional / Quantum / Spintronic Devices and Materials
Area 10 Thin Film Electronics: Oxide / Non‐single Crystalline / Novel Process
Area 11 Advanced Materials: Synthesis / Crystal Growth / Characterization
- TBA Michael Arnold Univ. of Wisconsin–Madison, USA
- TBA Masahiro Horita Nagoya Univ., Japan
-
Interface engineering for high-performance energy harvesting material
Takafumi Ishibe
Osaka Univ., Japan
- TBA Clement Porret imec, Belgium
-
Epitaxy growth of 2D p-type semiconductors with continuous crystallinity on
amorphous dielectric
Vincent Tung
The Univ. of Tokyo, Japan
Area 12 Advanced and Innovative Circuits / Systems Interacting with Devices and Materials
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Development of Scalable Highly Integrated Quantum Bit Error Correction System
Kazutoshi Kobayashi
Kyoto Inst. of Technology, Japan
-
Integrated Cryo-CMOS Circuit Systems for Quantum Computing
Jae-Yoon Sim
POSTECH, Korea
-
Optically-powered microelectronics platform for IoT and Biomedical
applications
Takashi Tokuda
Science Tokyo, Japan
Invited Speakers
- Area 1 Advanced CMOS: Material Science / Process Engineering / Device Technology
- Area 2 Advanced and Emerging Memories / New Applications
- Area 3 Heterogeneous and 3D Integration / Interconnect / MEMS
- Area 4 Power / High‐speed Devices and Materials
- Area 5 Photonics: Devices / Integration / Related Technology
- Area 6 Energy Harvesting and Converting Devices and Materials
- Area 7 Organic / Molecular / Bio‐electronics
- Area 8 Low Dimensional Devices and Materials
- Area 9 Novel Functional / Quantum / Spintronic Devices and Materials
- Area 10 Thin Film Electronics: Oxide / Non‐single Crystalline / Novel Process
- Area 11 Advanced Materials: Synthesis / Crystal Growth / Characterization
- Area 12 Advanced and Innovative Circuits / Systems Interacting with Devices and Materials