Invited Speakers

Area 1 Advanced CMOS: Material Science / Process Engineering / Device Technology

Area 2 Advanced and Emerging Memories / New Applications

• Bandgap-Engineered Gate Stack Using BN-Based Dielectric for 3D V-NAND Flash Memory Dae Hyun Kang KAIST, Korea
• Analysis of OTS Switching Mechanisms and Memory Characteristics via DFT-informed Stochastically Induced Defect Percolation Model Hyunsang Hwang POSTECH, Korea
• TBA Sheng-Yu Peng National Yang-Ming Univ. of National Chiao Tung, China
• TBA Hiroshi Funakubo Tokyo Inst. of Technology, Japan
• TBA Vijaykrishnan Narayanan The Pennsylvania State Univ., USA
• TBA Masahiko Nakayama Kioxia Corp., Japan
• TBA Mutsumi Okajima Kioxia Corp., Japan
• TBA Yung-Hsien Wu National Tsing Hua Univ., Taiwan
• MRAM based probabilistic computing Hyunsoo Yang National Univ. of Singapore, Singapore
• TBA Michael Hoffmann Ferroelectric Memory Company, USA

Area 3 Heterogeneous and 3D Integration / Interconnect / MEMS

• Perspectives of CoSn kagome metal as anisotropic conductor for advanced interconnects Tomoya Nakatani NIMS, Japan

Area 4 Power / High‐speed Devices and Materials

• TBA Tetsu Kachi Nagoya Univ., Japan
• TBA Akira Nakajima AIST, Japan

Area 5 Photonics: Devices / Integration / Related Technology

• Neural Network Computing Using Silicon Photonic Integrated Circuit Guangwei Cong AIST, Japan
• Transfer Printing for Advanced Photonic Integration Yasutomo Ohta Keio Univ., Japan
• TBA Guoqiang Zhang NTT, Japan

Area 6 Energy Harvesting and Converting Devices and Materials

• Development of Solid-State Electrochemical Thermal Transistors Hiromichi Ohta Hokkaido Univ., Japan
• TBA Hiroaki Jinno JAXA, Japan

Area 7 Organic / Molecular / Bio‐electronics

• Development of High-Durability and Low-Cost Technologies for the Practical Application of Perovskite Solar Cells Takurou Murakami NAIST, Japan
• TBA Wonhyung Ryu Yonsei Univ., Korea

Area 8 Low Dimensional Devices and Materials

• TBA Wen-Hao Chang Academia Sinica, Taiwan
• TBA Tomoki Machida The Univ. of Tokyo, Japan
• TBA Corentin Morin CNRS, France
• TBA Koichi Yamaguchi The Univ. of Electro-Communications, Japan
• TBA Katsumasa Yoshioka NTT BRL, Japan

Area 10 Thin Film Electronics: Oxide / Non‐single Crystalline / Novel Process

• TBA Xiao Gong National Univ. of Singapore, Singapore
• Recent progress in diamond MOSFET technology Norio Tokuda Kanazawa Univ., Japan
• TBA Wenchang Yeh Shimane Univ., Japan

Area 11 Advanced Materials: Synthesis / Crystal Growth / Characterization

• TBA Michael Arnold Univ. of Wisconsin–Madison, USA
• TBA Masahiro Horita Nagoya Univ., Japan
• TBA Takafumi Ishibe Osaka Univ., Japan
• TBA Clement Porret imec, Belgium
• TBA Vincent Tung The Univ. of Tokyo, Japan

Area 12 Advanced and Innovative Circuits / Systems Interacting with Devices and Materials