Invited Speakers

Area 1 Advanced CMOS: Material Science / Process Engineering / Device Technology

Area 2 Advanced and Emerging Memories / New Applications

• Exploring Innovative IGZO-channel based DRAM Cell Architectures and Key Technologies for Sub-10nm Node Daewon Ha Samsung Electronics, Korea
• Investigation of Read Disturb for Hf 0.5 Zr 0.502 Ferroelectric Field-Effect Transistors Based Neuromorphic Applications Genquan Han Xidian Univ., China
• Comprehensive Design Guidelines of Gate Stack for QLC and Highly Reliable Ferroelectric VNAND Jinseong Heo Samsung Electronics, Korea
• HZO FeRAM scalability demonstration at 22nm FDSOI node for embedded applications Simon Martin CEA-Leti, France
• Design Technology of CMOS/Spintronics-Hybrid AI Processor Masanori Natsui Tohoku Univ., Japan
• HfO₂-based Ferroelectric Devices for Edge AI Application Jun Okuno Sony Semiconductor Solutions Corp., Japan
• Superior Scalability of Advanced Horizontal Channel Flash For Future Generations of 3D Flash Memory Minoru Oda Kioxia Corp., Japan

Area 3 Heterogeneous and 3D Integration / Interconnect / MEMS

• TBD Tatsuya Funaki Murata Manufacturing Co., Ltd., Japan
• Fracture mechanisn of sintered silver film revealed by in situ SEM uniaxial tensile loading Ken Nakahara ROHM, Japan

Area 4 Power / High‐speed Devices and Materials

• Recent development of GeO2, SBD device development Kentaro Kaneko Ritsumeikan Univ./PATENTIX, Japan
• Reconsideration on trap-passivation processes of 4H-SiC MOS interfaces Koji Kita The Univ. of Tokyo, Japan
• High-speed, high-sensitivity THz detectors based on 2D plasmons in graphene-/InGaAs-channel transistors Akira Satou Tohoku Univ., Japan
• TBD Uttam Singisetti University at Buffalo, USA
• Analog devices with compound semiconductors Zhikai Tang Texas Instruments, USA
• Overcoming Dynamic Instabilities in GaN Power Devices Jin Wei Peking Univ., China

Area 5 Photonics: Devices / Integration / Related Technology

• Example of work: Broadband Dual-Polarization 90° Optical Hybrid Array Supporting Spatial Parallelism Haoshuo Chen Nokia Bell Labs, USA
• High density CPO based on Si photonics technology Masaki Kato Marvell Technology, Japan
• UV Photonics Atsushi Taguchi Hokkaido Univ., Japan
• Coherent Ising Machine Kyoungsik Yu KAIST, Korea

Area 6 Energy Harvesting and Converting Devices and Materials

• Perovskite solar cells Shigeru Ikeda Konan Univ., Japan
• Various device structures of thermoelectric systems for specific purposes Woochul Kim Yonsei Univ., Korea
• Low-cost III-V multijunction cells Ryuji Oshima AIST, Japan

Area 7 Organic / Molecular / Bio‐electronics

• Iridium oxide based electrodes for bio-interface applications Po-Chun Chen National Taipei Univ. of Technology, Taiwan
• Organic host dispersion-based perovskite nanocrystals light-emitting diodes Takayuki Chiba Yamagata Univ., Japan
• Molecular Neuromorphic Building Blocks for Artificial Intelligence Sreetosh Goswami Indian Institute of Science, India
• Magnetic Biosensors Based on Giant Magnetoresistance Jung-Rok Lee Ewha Womans Univ., Korea
• Single-walled Carbon Nanotubes Transparent Electrodes with p- and n-Doping for Organic and Perovskite Solar Cells Yutaka Matsuo Nagoya Univ., Japan

Area 8 Low Dimensional Devices and Materials

• TBD Kah-Wee Ang National Univ. of Singapore, Singapore
• TBD Koji Horiba NIQST, Japan
• TBD Jinkwan Kwoen U Tokyo, Japan
• How to form interfaces in carbon nanotube electron devices? Yutaka Ohno Nagoya Univ., Japan

Area 9 Novel Functional / Quantum / Spintronic Devices and Materials

• 300mm Process Optimization for Silicon Spin Qubit Clément Godfrin IMEC, Belgium
• TBD Ryoichi Ishihara TUDelft, The Netherlands
• Towards Van der Waals Semiconductor Heterojunction Spintronics Kaiyou Wang Chinese Academy of Sciences, China

Area 10 Thin Film Electronics: Oxide / Non‐single Crystalline / Novel Process

• Oxide semiconductor FET for 3D integration in LSI application Masaharu Kobayashi The Univ. of Tokyo, Japan
• p-channel transistors Ao Liu Univ. of Electronic Science and Technology of China, China
• Carrier mobility enhancement of extremely-thin body Ge-On-Insulator (GOI) MOSFETs Shinichi Takagi The Univ. of Tokyo, Japan

Area 11 Advanced Materials: Synthesis / Crystal Growth / Characterization

• Graphene nanoribbons growth process on Ge and its device applications Micheal Arnold Univ. of Wisconsin-Madison, USA
• Recent Advances in ScAlN/GaN-based High Electron Mobility Transistors Takuya Maeda The Univ. of Tokyo, Japan
• Advanced Si / SiGe epitaxy process for beyond 2nm technology node Shogo Mochizuki IBM Research, USA
• On-demand evaluation of metal/insulator/semiconductor structures by voltage-applied HAXPES Hiroshi Nohira Tokyo City Univ., Japan
• Development of Spatiotemporal Measurement and Analysis Techniques in X-ray Photoelectron Spectroscopy Satoshi Toyoda Scienta Omicron, Japan

Area 12 Advanced and Innovative Circuits / Systems Interacting with Devices and Materials