Committees

Organizing Committee

Chair
T. Hiramoto (The Univ. of Tokyo)
Vice-Chair
M. Hatano (Science Tokyo)
Members
  • N. Aoto (Hiroshima Univ.)
  • F. Boeuf (STMicroelectronics)
  • T. Endoh (Tohoku Univ.)
  • S. Fujita (Kyoto Univ.)
  • J. Fujikata (EBARA Corp.)
  • H. Hidaka (Renesas Electronics Corp.)
  • D. Hisamoto (Hitachi, Ltd.)
  • M. Izawa (Hitachi High-Tech Corp.)
  • M. Katayama (MIRISE Technologies Corp.)
  • D. Kikuta (TOYOTA CENTRAL R&D LABS., INC.)
  • E. K. Kim (Hanyang Univ.)
  • T. Kimoto (Kyoto Univ.)
  • M. Kimura (Murata Manufacturing Co., Ltd.)
  • P.‐W. Li (NYCU)
  • N. Matsuzawa (Panasonic Industry Co., Ltd.)
  • Y. Miyamoto (Science Tokyo)
  • S. Miyazaki (Hiroshima Univ.)
  • K. Nakahara (Rohm Co., Ltd.)
  • M. Namba (NHK STRL)
  • T. Satake (Mitsubishi Electric Corp.)
  • S. Sato (Fujitsu Ltd.)
  • M. Shirane (NEC Corp.)
  • T. Sogawa (NTT Science and Core Technology Laboratory Group)
  • T. Someya (The Univ. of Tokyo)
  • T. Tatsumi (JSAP)
  • H. Ueda (Tokyo Electron Technology Solutions Ltd.)
  • J. Wada (KIOXIA Corp.)
  • H. Watanabe (Osaka Univ.)
  • T. Yasuda (AIST)
  • H. Yuasa (Kyushu Univ.)

Steering Committee

Chair
S. Iwamoto (The Univ. of Tokyo)
Vice-Chair
K. Nagashio (The Univ. of Tokyo)
Secretary
  • M. Nomura (The Univ. of Tokyo)
  • M. Deura (Waseda Univ.)
Members
  • G. Biwa (Sony Semiconductor Solutions Corp.)
  • T. Gotow (AIST)
  • T. Hoshii (Science Tokyo)
  • K. Ide (Science Tokyo)
  • F. Inoue (Yokohama National Univ.)
  • K. Kakushima (Science Tokyo)
  • K. Kuroyama (The Univ. of Tokyo)
  • M. Kobayashi (The Univ. of Tokyo)
  • N. Matsuhisa (The Univ. of Tokyo)
  • T. Miyazawa (Fujitsu Ltd.)
  • T. Kasidit (The Univ. of Tokyo)
  • R. Togashi (Sophia Univ.)
  • T. Onaya (The Univ. of Tokyo)
  • Y. Ota (Keio Univ.)
  • T. Oya (Yokohama National Univ.)
  • G. Yamahata (NTT BRL)
  • K. Yamamoto (Kumamoto Univ.)
  • S. Yoshida (Sumitomo Electric Industries, Ltd.)

Program Committee

Chair
  • H. Yuasa (Kyushu Univ.)
Vice-Chair
  • O. Nakatsuka (Nagoya Univ.)
Secretaries
  • T. Yajima (Kyushu Univ.)
  • K. Makihara (Nagoya Univ.)
  • W. Mizubayashi (AIST)
JJAP Special Issues Editors
  • T. Sadoh (Kyushu Univ.)
  • N. Taoka (Aichi Inst. of Technology)
  • S. Hara (Hokkaido Univ.)

Area 1 Advanced CMOS: Material Science / Process Engineering / Device Technology

Chair
  • K. Kakushima (Science Tokyo)
Vice-chair
  • P. Su (National Yang Ming Chiao Tung Univ.)
Members
  • F. Andrieu (CEA-Leti)
  • B.H. Choi (Samsung Electronics)
  • W.Y. Choi (Seoul National Univ.)
  • S. Kabuyanagi (KIOXIA Corp.)
  • T. Matsukawa (AIST)
  • G. Nakamura (Tokyo Electron Ltd.)
  • H. Ogawa (Rapidus Corp.)
  • N. Planes (STMicroelectronics)
  • S. Souma (Kobe Univ.)
  • K. Toprasertpong (The Univ. of Tokyo)
  • S. Tsuda (Renesas Electronics Corp.)
  • A. Veloso (imec)
  • K. Yamamoto (Kyushu Univ.)

Area 2 Advanced and Emerging Memories / New Applications

Chair
  • X. Bai (NanoBridge Semiconductor, Inc.)
Vice-chairs
  • K. Hosotani (KIOXIA Corp.)
  • H. Mulaosmanovic (GlobalFoundries)
Members
  • L. Grenouillet (CEA-Leti)
  • A. Himeno (Panasonic Holdings Corp.)
  • E. R. Hsieh (National Yang Ming Chiao Tung Univ.)
  • S. Jeon (KAIST)
  • H. S. Jung (Samsung Electronics)
  • K. Kouno (Nuvoton Technology Corp. Japan)
  • M. H. Lee (Macronix International Co., Ltd.)
  • K. Nagai (RAMXEED)
  • T. Numata (Toyota Technological Institute)
  • Y. Sato (Tohoku Univ.)
  • S. Ramesh (Micron Technology, Inc.)
  • A. Seko (Micron Memory Japan, K.K.)
  • W. T. Sun (eMemory Technology Inc.)
  • K. Takeuchi (The Univ. of Tokyo)
  • H. Tanigawa (Sony Semiconductor Manufacturing Corp.)
  • Y. Zheng (Tokyo Univ. of Science)

Area 3 Heterogeneous and 3D Integration / Interconnect / MEMS

Chair
  • K. Shiojima (Univ. of Fukui)
Vice-chairs
  • X. Gu (ASM)
  • M. B. Takeyama (Kitami Inst. of Technology)
Members
  • C. Hsien-Wei (TSMC)
  • J. De Messemaeker (imec)
  • C. Dussarrat (Air Liquide)
  • W. Feng (AIST)
  • M. Kitamura (KIOXIA Corp.)
  • T. Matsumoto (Tokyo Electron Technology Solutions Ltd.)
  • T. Minari (NIMS)
  • T. Namazu (KUAS)
  • T. Nogami (IBM Research)
  • Y. Ohba (Sony Semiconductor Manufacturing Corp.)
  • J. M. Song (National Chung Hsing Univ.)
  • K. Suzuki (Samsung Japan Corp.)
  • N. Tsuruoka (Tohoku Univ.)
  • C. H. Wang (ITRI)
  • A. Yamaguchi (Toyo Univ.)
  • S. Yasuhara (Japan Advanced Chemicals Ltd.)

Area 4 Power / High‐speed Devices and Materials

Chair
  • T. Sato (Hokkaido Univ.)
Vice-Chairs
  • J. T. Asubar (Univ. of Fukui)
  • M. Kato (Nagoya Inst. of Technology)
  • G. Greco (CNR-IMM)
Members
  • K. Adachi (Mitsubishi Electric)
  • H. Dixit (Wolfspeed, Inc.)
  • Y. M. Hsin (National Central Univ.)
  • Q. Jiang (Chinese Academy of Sciences)
  • T. Kachi (Toshiba Device & Storage)
  • K. Kutsuki (Toyota Central R&D Labs., Inc.)
  • T. Nishiguchi (Sumitomo Electric)
  • M. Okamoto (AIST)
  • T. Ono (Kobe Univ.)
  • K. Sasaki (Novel Crystal Technology, Inc.)
  • S. Takashima (Fuji Electric)
  • S. Usami (Osaka Univ.)
  • T. Suto (Hitachi, Ltd.)
  • T. Tsutsumi (Osaka Metropolitan Univ.)

Area 5 Photonics: Devices / Integration / Related Technology

Chair
  • K. Akahane (NICT)
Vice-Chairs
  • M. Shirao (Mitsubishi Electric)
  • K. Hassan (CEA-LETI)
Members
  • F. Boeuf (STMicroelectronics)
  • U. Koch (ETH Zurich)
  • K. Komatsu (Sumitomo Electric Industries, Ltd.)
  • Y. J. Lu (Academia Sinica)
  • M. Murayama (Sony Semiconductor Solutions)
  • A. Ono (Shizuoka Univ.)
  • H. Ono (OKI)
  • K. Suzuki (AIST)
  • X. Xu (Nippon Telegraph and Telephone Corp.)

Area 6 Energy Harvesting and Converting Devices and Materials

Chair
  • H. Suzuki (Univ. of Miyazaki)
Vice-Chairs
  • S. Ishizuka (AIST)
  • H.S. Lee (Korea Univ.)
Members
  • K. O. Hara (NAIST)
  • T. Hoshii (Science Tokyo)
  • S. Kato (Nagoya Inst. of Technology)
  • A. Kosuga (Osaka Metropolitan Univ.)
  • M. Shahiduzzaman (Kanazawa Univ.)
  • M. Nomura (The Univ. of Tokyo)
  • Y. Nose (Kyoto Univ.)
  • T. Sekimoto (Panasonic Corp.)
  • N. Shibayama (Toin Univ. of Yokohama)
  • H. Shinohara (Waseda Univ.)
  • S. Yamada (Kyushu Inst. of Technology)
  • S. Yamaguchi (Toyota Motors)
  • K. Watanabe (The Univ. of Tokyo)

Area 7 Organic / Molecular / Bio‐electronics

Chair
  • M. Nakamura (NAIST)
Vice-Chairs
  • C. Nijhuis (Univ. of Twente)
  • T. Tokuda (Science Tokyo)
  • C. Liu (National Tsing Hua Univ.)
Members
  • H. M. C. P. Chen (National Yang Ming Chiao Tung Univ.)
  • H. Iino (Science Tokyo)
  • H. Kino (Kyushu Univ.)
  • H. Takehara (The Univ. of Tokyo)
  • K. Takei (Hokkaido Univ.)
  • D. Tadaki (Tohoku Univ.)
  • K. Takahashi (Toyohashi Univ. of Technology)
  • R. Tero (Toyohashi Univ. of Technology)
  • T. Matsushima (Kyushu Univ.)
  • S. Yokokura (Hokkaido Univ.)

Area 8 Low Dimensional Devices and Materials

Chair
  • M. Jo (RIKEN)
Vice-Chairs
  • T. Irisawa (AIST)
  • G. Souvik (imec)
Members
  • T. Arie (Osaka Metropolitan Univ.)
  • J. Brault (CNRS)
  • S. Hara (Hokkaido Univ.)
  • S. Hiura (Hokkaido Univ.)
  • Y. Hoshi (Tokyo City Univ.)
  • T. Kato (Tohoku Univ.)
  • T. Kawanago (AIST)
  • Y. F. Lin (National Chung Hsing Univ.)
  • S. Nakaharai (Tokyo Univ. of Tech.)
  • T. Sasaki (QST)
  • T. Takenobu (Nagoya Univ.)
  • S. Wang (NTT Basic Research Lab.)
  • T. Yanagida (The Univ. of Tokyo)
  • M. Yamamoto (Kansai Univ.)

Area 9 Novel Functional / Quantum / Spintronic Devices and Materials

Chair
  • T. Fujita (Osaka Univ.)
Vice-Chairs
  • Y. Nishi (Toshiba Corp.)
  • S. Ohya (The Univ. of Tokyo)
  • P.‐W. Li (National Yang Ming Chiao Tung Univ.)
Members
  • K. Aoshima (NHK STRL)
  • H. Asai (AIST)
  • S. Karube (Kyoto Univ.)
  • M. Kohda (Tohoku Univ.)
  • S. Lee (Gachon Univ.)
  • W. C. Lin (National Taiwan Normal Univ.)
  • Y. Matsuzaki (AIST)
  • T. Miyazawa (Fujitsu Ltd.)
  • N. Nishizawa (Kitasato Univ.)
  • M. Quinsat (KIOXIA Corp.)
  • M. Shinozaki (Tohoku Univ.)
  • H. Sukegawa (NIMS)
  • T. Tsuchiya (NIMS)
  • H. Yuasa (Kyushu Univ.)
  • J. Yoneda (The Univ. of Tokyo)

Area 10 Thin Film Electronics: Oxide / Non‐single Crystalline / Novel Process

Chair
  • R. Matsumura (NIMS)
Vice-Chairs
  • T. Murakami (KIOXIA Corp.)
  • C.-Y. Chang (TSMC)
Members
  • J. P. Bermundo (NAIST)
  • M. Furuta (Kochi Univ. of Technology)
  • K. Ide (Science Tokyo)
  • J. Koyama (Semiconductor Energy Lab.)
  • S. Kuroki (Hiroshima Univ.)
  • T.E. Lee (National Yang Ming Chiao Tung Univ.)
  • C. Liu (Sun Yat-sen Univ.)
  • P.T. Liu (National Yang Ming Chiao Tung Univ.)
  • Y. Magari (Hokkaido Univ.)
  • K. Moto (Forschungszentrum Jülich)
  • H. Nishinaka (Kyoto Inst. of Technology)
  • K. Toko (Univ. of Tsukuba)
  • W. Yeh (Shimane Univ.)
  • S.M. Yoon (Kyung Hee Univ.)

Area 11 Advanced Materials: Synthesis / Crystal Growth / Characterization

Chair
  • S. Ogawa (Toray Research Center, Inc.)
Vice-Chairs
  • A. Kikuchi (Sophia Univ.)
  • K. Watanabe (Shinshu Univ.)
  • Y. Shimura (imec)
Members
  • Y.L. Chueh (National Tsing-Hua Univ.)
  • S. Fujii (Univ. of Hyogo)
  • T. Hoshi (NTT Device Technology Lab.)
  • K. Makihara (Nagoya Univ.)
  • T. Sadoh (Kyushu Univ.)
  • H. Tatsuoka (Shizuoka Univ.)
  • Y. Tominaga (Hiroshima Univ.)
  • W.‐W. Wu (National Yang Ming Chiao Tung Univ.)
  • T. Yamaguchi (Kogakuin Univ.)
  • Y. Yamamoto (IHP GmbH)

Area 12 Advanced Circuits / Systems Interacting with Innovative Devices and Materials

Chair
  • K. Miyaji (Shinshu Univ.)
Vice-Chairs
  • Y. Ogasawara (AIST)
  • A. Tsuchiya (The Univ. of Shiga Prefecture)
  • H. Lin (National Chung Hsing Univ.)
Members
  • A. Kosuge (The Univ. of Tokyo)
  • M. Islam (Science Tokyo)
  • K. J. Lee (Ulsan National Inst. of Science and Technology)
  • Y. Ma (Zhejiang Univ.)
  • N. Nakano (Keio Univ.)
  • H. Qiu (Nanjing Univ.)
  • W. Saito (Renesas Electronics Corp.)
  • J. Yoo (Seoul National Univ.)
  • T. Yoshida (Hiroshima Univ.)