Scope

Area 1 Advanced CMOS: Material Science / Process Engineering / Device Technology

Chair : H. Oishi (Sony Semiconductor Solutions Corp.)

Papers related to material science, process engineering, and device technology for CMOS and relevant transistors are solicited including the following:

(1) Advanced CMOS devices for scaling — high performance, low power, high density, high reliability;
(2) Advanced transistors and devices for emerging applications — AI, RF for 5G/6G, cryo‐CMOS for quantum computing etc;
(3) Emerging material and process — high‐mobility channel, high‐k/metal‐gate, MOS interface, junction/contact, 3D nanostructure, heterogeneous integration, sustainable process technology etc;
(4) Fundamental physics, modeling, and simulation for material, process, and device
(5) Design technology co‐optimization (DTCO) for high manufacturability and system performance.

Area 2 Advanced and Emerging Memories / New Applications

Chair : M.‐H. Lee (Macronix International Co., Ltd)

Papers related to advanced memory technologies are solicited including the following:

(1) Conventional memories and novel memories such as ReRAM, MRAM, PRAM, and FeRAM;
(2) Memory‐function‐related circuit elements;
(3) Memory device physics, reliability, and modeling;
(4) Cell structures, processes, and materials;
(5) Devices for neuromorphic computing applications, and memory‐based logic applications.

Area 3 Interconnect / 3D Integrations / MEMS

Chair : T. Saito (Osaka Metropolitan Univ.)

Papers related to interconnect materials, processes, and devices are solicited including the following:

(1) Interconnect systems for advanced CMOS, low‐power and high power devices, Cu/low‐k materials, barrier technologies, carbon‐based interconnects, novel interconnect and contact materials and processes
(2) Theoretical and experimental study for interconnect reliability
(3) Fabrication technology for optical interconnects;
(4) 3D integration and packaging technologies, including TSVs, bumps, bonding, stacking methods, stress and thermal analysis, etc.;
(5) Heterogeneous 3D systems‐in‐packages;
(6) MEMS/RF, MEMS and bio‐MEMS integration processes;

Area 4 Power / High‐speed Devices and Materials

Chair : H. Watanabe (Osaka Univ.)

Papers related to power devices (Si, SiC, GaN, Ga₂O₃, diamond, and other materials) and high‐speed compound semiconductor devices (FETs, HFETs, HEMTs, HBTs, and other novel devices) are solicited including topics on the following:

(1) Materials and physical properties;
(2) Processes and characterization;
(3) Device physics;
(4) Reliability and modeling;
(5) Interconnect, packaging, and module technologies;
(6) Novel applications.

Area 5 Photonics: Devices / Integration / Related Technology

Chair : S. Iwamoto (Univ. of Tokyo)

Papers related to photonic technologies and physics are solicited including the following:

(1) Photonic/optoelectronic integration such as Si photonics, hybrid photonics, and photonic/electronic convergence circuits;
(2) LEDs (including III‐nitride, organic/inorganic, and novel materials), lasers, photodetectors, optical modulators, optical amplifiers, optical isolators, optical waveguides, wavelength filters, and other photonic devices;
(3) Implementation and packaging for optical communication systems and LED lighting;
(4) Photonic devices and circuits for optical interconnects;
(5) Optical signal processing;
(6) Optical sensing technologies for living bodies, in‐vehicle use, and others;
(7) Photonic materials and process technologies;
(8) Device physics;
(9) Novel optical phenomena and applications;
(10) Integrated optical circuits for quantum applications;
(11) Applications of integrated optics to AI.

Area 6 Photovoltaics / Energy Harvesting / Battery‐related Technology

Chair : T. Tayagaki (AIST)

Papers related to experimental and theoretical studies of solar cells, solid‐state rechargeable batteries, capacitors, solid oxide fuel cells, and other ambient energy harvesters including thermoelectric generators, electrets, rectennas, piezoelectric generators, etc. The scope of this area includes the following:

(1) Novel materials for energy generation/conversion/storage systems including superionic conductors;
(2) Processes, characterizations, and physical properties of solid‐state materials and devices for energy generation/conversion/storage systems including superionic conductors;
(3) Device physics and numerical simulation/modeling;
(4) Cathode/anode/electrolyte developments for electrochemical energy storage devices (batteries, capacitors);
(5) Module technologies, including encapsulation and interconnections.

Area 7 Organic / Molecular / Bio‐electronics

Chair : R. Tero (Toyohashi Univ. of Technology)

The scope of this area is devices using organic or molecular materials, or dealing with biological, chemical or medical applications. Papers in the following lists are solicited, including peripheral area.

(1) Organic and molecular electronics and related phenomena;
(2) Organic transistors and light‐emitting devices;
(3) Organic‐based photovoltaics;
(4) Physical and chemical sensors, memories, and actuators;
(5) Biological materials and related phenomena;
(6) Imaging and spectroscopy systems;
(7) Biosensors and medical sensors;
(8) Bio‐MEMS/NEMS, CMOS, and related devices;
(9) µ‐TAS and labs on chips (LOCs);
(10) Liquid crystal materials and devices.

Area 8 Low Dimensional Devices and Materials

Chair : S. Nakaharai (NIMS)

Papers related to low‐dimensional materials such as quantum dots, nanowires, nanotubes, graphene, and 2D materials, and their device applications are solicited. The scope includes both experimental and theoretical studies on the following:

(1) Growth and characterization;
(2) Fundamental physics;
(3) Electronic and optical devices;
(4) Sensors;
(5) Interconnects;
(6) Energy harvesting;
(7) Nano‐mechanics;
(8) Novel functional devices.

Area 9 Novel Functional / Quantum / Spintronic Devices and Materials

Chair : T. Kodera (Tokyo Tech)

Papers related to new physics and its applications in novel functional/quantum/spintronic devices and materials are solicited, including topics the following:

(1) Quantum‐mechanical phenomena and nanodevices studied utilizing single electrons, excitons, photons, plasmons, and other quanta;
(2) Spin transport and spintronic devices;
(3) Spin‐related interactions with light and high‐frequency electromagnetic waves;
(4) Emerging material systems such as topological insulators, graphene, diamond NV centers, and 2D materials;
(5) Emerging device systems for neuromorphic computing or neuroscience.

Area 10 Thin Film Electronics: Oxide / Non‐single Crystalline / Novel Process

Chair : K. Toko (Univ. of Tsukuba)

Papers are solicited on technical innovations relating to thin‐film materials, processing, and manufacturing technologies covering

(1) Oxide and non‐single‐crystalline materials for thin‐film electronics including amorphous, nanosize, low‐dimensional, microcrystalline, and polycrystalline materials;
(2) Homogeneous and compound thin‐film material synthesis, growth, and other process technologies including deposition, crystallization, layer transfer, liquid processes, and novel approaches;
(3) Device fabrication, characterization, reliability, modeling, flexible devices, and their applications.

Area 11 Advanced Materials: Synthesis / Crystal Growth / Characterization

Chair : T. Sadoh (Kyushu Univ.)

Papers related to advanced material synthesis, crystal growth, and characterization technologies are solicited, including semiconductor‐ and functional‐material‐based advanced technologies of

(1) Crystal growth;
(2) Synthesis;
(3) Fabrication;
(4) Doping;
(5) Nanostructures;

Area 12 Advanced Circuits / Systems Interacting with Innovative Devices and Materials

Chair : T. Yoshida (Hiroshima Univ.)

Papers related to circuits and systems using solid‐state devices and materials that have been evaluated by measurement or simulation results are solicited, including:

(1) Sensor‐related circuits, systems, and applications including imagers, photonic devices, and chemical/physical sensors;
(2) Power electronics circuits and systems including drivers, power converters, wireless power transfer systems, and energy‐harvesting circuit techniques;
(3) Memory‐related circuit and system techniques including neuroscience, AI, edge computing for IoT;
(4) RF/analog/digital/mixed‐signal/biomedical/MEMS circuit techniques for building blocks;
(5) Other circuits and systems using new devices and materials including ultralow‐power circuit design methodologies and test/measurement techniques.

Scope

Area 1 :
Advanced CMOS: Material Science / Process Engineering / Device Technology
Area 2 :
Advanced and Emerging Memories / New Applications
Area 3 :
Interconnect / 3D Integrations / MEMS
Area 4 :
Power / High‐speed Devices and Materials
Area 5 :
Photonics: Devices / Integration / Related Technology
Area 6 :
Photovoltaics / Energy Harvesting / Battery‐related Technology
Area 7 :
Organic / Molecular / Bio‐electronics
Area 8 :
Low Dimensional Devices and Materials
Area 9 :
Novel Functional / Quantum / Spintronic Devices and Materials
Area 10 :
Thin Film Electronics: Oxide / Non‐single Crystalline / Novel Process
Area 11 :
Advanced Materials: Synthesis / Crystal Growth / Characterization
Area 12 :
Advanced Circuits / Systems Interacting with Innovative Devices and Materials