The scope of this focus session includes novel applications of low-dimensional materials like hBN, graphene and TMDCs to break through the challenges in advanced CMOS and memory technologies. Novel concept devices based on the new materials will be also discussed both experimentally and theoretically.
The scope of this focus session includes novel oxide semiconductors with innovative solutions for emerging logic and memory applications. Novel material, device concepts, and the integration with CMOS technology will be discussed.
New applications such as neural networks and AI may require new computation strategies. Approaches to improve the performance of the future computing system will be discussed in this focused session, which include 2D materials, devices, computation algorithms, circuits, and system architectures,...etc.
2D Material based Bio-inspired Neuromorphic Edge
Computing Devices
Saptarshi Das
(Pennsylvania State Univ., USA)
Analog Computation-in-Memory (CiM) for Neuromorphic
Computing
Ken Takeuchi
(Univ. of Tokyo, Japan)
This focus session is about quantum computing technologies including material research, device development, device modeling, and circuit design for cryogenic computing. From cutting-edge research to device demonstration, the current state of quantum computation will be discussed.
Cryogenic InGaAs HEMTs for LNA and routing circuits in
Quantum computing
Sanghyeon Kim
(KAIST, Korea)
The scope of this focus session includes novel design and system, innovative process and technology for advanced CMOS integration, and ultrafast interconnect methodology to develop high-performance computing systems. The current status and future potentiality of 3D as well as heterogenous integration to realize high-performance chiplet will be also given in this session to carve out a new future.
The evolution towards CMOS 2.0, a Heterogeneous Logic Platform
Geert Hellings
(imec, Belgium)
Scaling Potential of Transition Metal Dichalcogenide Monolayer Transistors (Focus Session 1)
Gouthamm Arutchelvan
(TSMC, Taiwan)
Oxide Semiconductor Devices for Back-End-of-Line Applications(Focus Session2)
Xiao Gong
(National Univ. of Singapore, Singapore)
Vertical-Transport Nanosheet Technology for Scaling
beyond the Lateral-Transport Devices CMOS Era
Hemanth Jagannathan
(IBM Research, USA)
Cryogenic InGaAs HEMTs for LNA and routing circuits in
Quantum computing(Focus Session4)
Sanghyeon Kim
(KAIST, Korea)
Channel and Transistor Stacking of Nanosheets
Chee-Wee Liu
(National Taiwan Univ., Taiwan)
Low Temperature Selective Growth of Group-IV Source / Drain Epilayers for
Advanced Contact Applications
Clement Porret
(imec, Belgium)
Introducing 2D Materials in Magnetic Tunnel Junctions
(Focus Session1)
Bruno Dlubak
(CNRS / Univ. of Paris-Saclay, France)
IGZO FET for Capacitorless DRAM Application
(Focus Session2)
Ming Liu
(Fudan Univ., China)
Polysilicon channel in 3-D NAND: Challenges and Strategies for
Improvement
Sivaramakrishnan Ramesh
(imec, Belgium)
Analog Computation-in-Memory (CiM) for Neuromorphic
Computing (Focus Session3)
Ken Takeuchi
(Univ. of Tokyo, Japan)
The evolution towards CMOS 2.0, a Heterogeneous Logic Platform
(Focus Session 5)
Geert Hellings
(imec, Belgium)
Considerations for post-Cu Alternative Metal BEOL Interconnects ~ Challenges
and Solutions ~
Koichi Motoyama
(IBM, USA)
Recent Progress towards high-performance lateral Ga2O3 FETs
Andrew Green
(Air Force Res. Lab., USA)
Proton implantation: the last resort to solve bipolar
degradation of SiC power devices?
Masashi Kato
(Nagoya Inst. of Tech., JAPAN)
Feasibility Study of InP-based Tera-Hertz-ICs Fabrication Process for Beyond
5G / 6G Wireless Network Systems
Takuya Tsutsumi
(NTT Device Tech. Lab., JAPAN)
Large-Scale Integrated Silicon Thermoelectric
Device
Takanobu Watanabe
(Waseda Univ., Japan)
Demonstration of Reversible Photo-Assisted Lithium Extraction at Solid-Solid
Interface toward Photo-Rechargeable Battery
Masataka Yoshimoto
(Tokyo Tech, Japan)
Perovskite Solar Cells Consisting of Sn and All-perovskite Tandem Solar
Cells(Joint Session)
Shuzi Hayase
(The Univ. of Electro-Communications, Japan)
Simple & Rapid Virus Detection by Integrated Graphene FET Array with Automated
Solution Exchange System
Kazuhiko Matsumoto
(Osaka Univ., Japan)
Development of high-performance Sn Based Halide Perovskite Transistors
Yong-Young Noh
(Pohang Univ. of Sci. and Tech. (POSTECH), Korea)
Synthesis and Electronic Applications of Wafer-Scale
2.5D Materials
Hiroki Ago
(Kyusyu Univ., Japan)
2D Material based Bio-inspired Neuromorphic Edge
Computing Devices
(Focus Session 3)
Saptarshi Das
(Pennsylvania State Univ., USA)
Electron- and Magnon-Mediated Spin Torque based on Topological
Materials
Yi Wang
(Dalian Univ. of Tech., China)
Si-Ge-Sn heterostructures grown by chemical vapor
deposition for electronic and photonic devices silicon
during solidification
Detlev Grützmacher
(Forschungszentrum Julich, Germany)
Design of Novel Hetero-Nanostructures for Electronic and Optoelectronic
Devices
Johnny Ho
(City Univ. of Hong Kong, China)
Effect of Basal Plane Dislocation Structure on 1SSF Expansion Rate in
4H-SiC
Johji Nishio
(Toshiba Corp., Japan)