Invited Speakers

Focus Session 1 Quantum Computing: Materials, Devices, and Circuits

This focus session is about quantum computing technologies including material research, device development, and circuit design for cryogenic quantum controller. From cutting-edge research to device demonstration, the current state of quantum computation will be discussed.

• G-4-02 Challenge and Opportunity of Low‐power Nonvolatile FPGA using NanoBridge for Cryogenic Quantum Controller Munehiro Tada (NanoBridge Semiconductor, Inc., Japan)
• G-3-01 Quantum Computation — Spins Inside Lieven Vandersypen (Delft Univ. of Tech., The Netherlands)
• C-5-01 Developments of Silicon Spin Qubits beyond High‐Fidelity Gate Operations Jun Yoneda (Tokyo Tech, Japan)
• G-4-01 High Volume Cryogenic Characterization of Silicon Spin Qubit Devices from a 300mm Process Line Otto Zietz (Intel, USA)

Focus Session 2 CMOS and Memory Applications of Low Dimensional Materials

The scope of this focus session includes novel applications of low-dimensional materials like hBN, graphene and TMDCs to emerging CMOS and memory devices for a breakthrough in current technological challenges. Novel concept devices based on the new materials will be also discussed both experimentally and theoretically.

• F-10-01 Hybrid 2D/CMOS microchips for memristive technologies Mario Lanza (KAUST, Saudi Arabia)
• F-9-01 Novel high‐k insulator deposition on 2D materials for future electronics Kosuke Nagashio (Univ. of Tokyo, Japan)
• F-9-05 Comparing h-BN and MgO as Tunnel Barriers in scaled Magnetic Tunnel Junctions John Robertson (Cambridge Univ., UK)
• F-10-05 2D transistor top and bottom gate stack scaling in 300mm pilot line Quentin Smets (imec, Belgium)

Focus Session 3 Design, Process, and Technology for High–performance Chiplet

The scope of this focus session includes novel design and system, innovative process and technology for integration, and ultrafast interconnect methodology to develop High-performance Chiplet. The current status and future potentiality of High-performance Chiplet will be also given in this session to carve out a new future.

• K-3-03 Advanced Encapsulants for Compound Semiconductor Package Kuo‐Chan Chiou (ITRI, Taiwan)
• K-4-01 Heterogenous Integration on Flexible Substrates Subramanian S. Iyer (ULCA, USA)
• K-3-01 Wafer Bonding Advances and 3D Applications Hiroshi Yamamoto (EV Group Japan, Japan)
• K-3-02 Advances in monolithic high‐speed SiGe photonic electronic system integration Lars Zimmermann (IHP, Germany)

Area 1 Advanced CMOS: Material Science / Process Engineering / Device Technology

• G-10-01 Design‐Technology Co‐Optimization for Future CMOS: from finFET to CFETs and Backside Power Gaspard Hiblot (imec, Belgium)
• G-2-01 Opportunity of Deep Learning Applicable to TCAD Sanghoon Myung (Samsung Electronics, Korea)
• G-5-01 3D Sequential Process Integration for CMOS Image Sensor Junpei Yamamoto (Sony, Japan)
• E-4-02 Opportunity of Monolithic 3D Compute‐in‐Memory Technology Shimeng Yu (Georgia Inst. of Tech., USA)
• G-7-01 CMOS Technology Beyond FINFET : Challenges and Opportunities Kai Zhao (IBM, USA)

Area 2 Advanced and Emerging Memories / New Applications

• F-3-01 HfO₂–based FeRAM, from material perspective to circuit application Jean Coignus (CEA-Leti, France)
• F-5-01 Scaling Perspectives on 3D NAND Flash Akira Goda (Micron, Japan)
• F-7-01 Neuromorphic computing with diffusive memristors J. Joshua Yang (Univ. of Southern California, USA)

Area 3 Interconnect / 3D Integrations / MEMS

• E-7-01 Strategy of Wafer Bonding Techniques in Commercial MEMS Tadashi Inoue (MMI Semiconductor Co., Ltd., Japan)
• K-6-01 Further Scaling Challenges and Opportunities Takashi Hayakawa (TEL, Japan)

Area 4 Power / High–speed Devices and Materials

• J-3-01 Terahertz InP/GaAsSb Double Heterojunction Bipolar Transistors Akshay Mahadev Arabhavi (ETH-Zurich, Switzerland)
• J-2-01 Advanced GaN HEMTs for high‐efficiency and high‐frequency power amplifiers Yusuke Kumazaki (Fujitsu Labs. Ltd., Japan)
• J-9-01 Non‐destructive Breakdown in GaN/SiC‐based Hybrid HEMT Akira Nakajima (AIST, Japan)
• J-8-01 Progress of Low‐Voltage Si‐Power MOSFETs Wataru Saito (Kyushu Univ., Japan)
• J-4-01 Beyond SiC: What's Next for Kilovolts Power Devices? Yuhao Zhang (Virginia Tech. Univ., USA)

Area 5 Photonics: Devices / Integration / Related Technology

• A-2-01 Integrated active lithium niobate photonic devices Ya Cheng (Shanghai Inst. of Optics and Fine Mechanics, China)
• A-10-05 Analog photonic computing for Deep Neural Network Applications Nikos Pleros (Aristotle Univ. of Thessaloniki, Greece)

Area 6 Photovoltaics / Energy Harvesting / Battery–related Technology

• C-3-01 From ink development to module commercialization, approach, challenges, and opportunities Samy Almosni (Saule Technologies, Poland)
• C-2-05 Pathways to high‐efficiency and outdoor‐stable perovskite/silicon tandem solar cells Stefaan De Wolf (KAUST, Saudi Arabia)
• C-4-01 Toward Low Cost and High Energy Beyond Li‐Ion Batteries for Large‐Scales Haegyeom Kim (Lawrence Berkeley National Lab., USA)
• C-9-01 Composite effects on thermoelectric properties: a new design of practical thermoelectric generators Tsunehiro Takeuchi (Toyota Technological Inst., Japan)

Area 7 Organic / Molecular / Bio–electronics

• D-3-01 3D nanoelectrode arrays for high resolution neuronal recording at the single cell level Guilhem Larrieu (LAAS-CNRS, France)
• D-5-01 Synthesis and Characterization of new TADF (macro)molecular materials based on through‐space donor‐acceptor interactions Fabrice Mathevet (IPCM, CNRS, Sorbonne Universite, France)
• D-2-01 Electrochemical imaging system and its application for vascular model and stem cell differentiation Hitoshi Shiku (Tohoku Univ., Japan)
• D-6-01 Recent Progress of On‐Skin Electronics and Smart Textiles Takao Someya (Univ. of Tokyo, Japan)

Area 8 Low Dimensional Devices and Materials

• H-6-01 Growth of quantum dots and light source applications Kouichi Akahane (NICT, Japan)
• H-3-06 Post‐growth Tailoring of Nanowires' Bandgap: Towards Tunable Single Photon Sources and Quantum Rings Marta De Luca (Sapienza Univ. of Rome, Italy)
• H-8-01 Upconversion Optoelectronic Phenomena in van Der Waals Heterostructures Goki Eda (National Univ. of Singapore, Singapore)
• H-5-01 Heterostructures based on two‐dimensional semiconductors Ryo Kitaura (NIMS, Japan)

Area 9 Novel Functional / Quantum / Spintronic Devices and Materials

• C-8-01 Ferrimagnetic Spintronics Kyung‐Jin Lee (KAIST, Korea)
• H-2-01 In‐Materio Reservoir Computing Devices of Random Network Nanoparticles for Autonomous robotics Hirofumi Tanaka (Kyushu Inst. of Tech., Japan)
• C-6-01 Recent Progress in Quantum Annealing Machine Using Kerr‐Parametric Oscillators Aiko Yamaguchi (NEC Corp., Japan)

Area 10 Thin Film Electronics: Oxide / Non–single Crystalline / Novel Process

• E-2-01 In‐situ observations of crystal growth behaviors of silicon during solidification Kozo Fujiwara (Tohoku Univ., Japan)
• E-3-01 Electrical Characteristic and Stability of Indium‐Oxide Based Nanosheet Transistor with Different Metal Dopants Po‐Tsun Liu (NYCU, Taiwan)
• E-6-01 Robust Molecular Recognition Electronics using Metal Oxide Nanostructures Takeshi Yanagida (Univ. of Tokyo / Kyushu Univ., Japan)
• E-4-01 Atomic-layer-deposited atomically thin In₂O₃ channel for BEOL logic and memory applications Peide D. Ye (Purdue Univ., USA)

Area 11 Advanced Materials: Synthesis / Crystal Growth / Characterization

• B-2-02 Morphology and Properties of Diamond Deposited on Grooved 4H‐SiC Substrate Kuan Yew Cheong (Universiti Sains Malaysia, Malaysia)
• B-2-01 Metrology to Support Processing and Development of 4H‐SiC CMOS and Power Devices at Fraunhofer IISB from Research to Multi Project Wafer Services Mathias Rommel (Fraunhofer Inst. for Integrated Systems and Device Tech., Germany)
• B-8-01 Layer exchange of group IV materials: crystal growth and device applications Kaoru Toko (Univ. of Tsukuba, Japan)
• B-3-01 Heteroepitaxy of Group IV Materials for Future Device Application Yuji Yamamoto (IHP, Germany)

Area 12 Advanced Circuits / Systems Interacting with Innovative Devices and Materials

• K-7-01 Mixed‐Signal Circuit Design for the Data‐Driven World Boris Murmann (Stanford Univ., USA)
• K-5-01 Hiddenite: CNN Inference Accelerator for Randomly Weighted Neural Networks Jaehoon Yu (Tokyo Tech, Japan)