Invited Speakers
Area 1 Advanced CMOS: Material Science / Process Engineering / Device Technology
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A-1-01
Recent Progress of FDSOI MOS Technology for Quantum Computing and Perspectives for Scaling up
Benoit Bertrand
(CEA-Leti, France)
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A-6-01
SOI CMOS and SiGe BiCMOS Technologies for RF and mmW Applications
Pascal Chevalier
(STMicroelectronics, France)
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A-4-05
GeSn/GeSi Stacked Channel Transistors
CheeWee Liu
(National Taiwan Univ., Taiwan)
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A-7-01
Enablement of Next Generation Nanosheet Technology
Nicolas Loubet
(IBM Research, USA)
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A-4-01
Technology Enablement for Advanced Logic Nodes using Materials to Systems Co-Optimization™ Platform
Ashish Pal
(AMAT, USA)
Area 2 Advanced and Emerging Memories / New Applications
- B-5-01 Hafnia-based Ferroelectric Tunnel Junction for Emerging Applications Shosuke Fujii (Kioxia Corp., Japan)
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B-6-01
Technology Challenge and Opportunity of HfO2-based FeFET Memory
Masaharu Kobayashi
(The Univ. of Tokyo, Japan)
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B-3-05
Toward ultimately-dense memory devices using ferroelectric HfO2
Junhee Lee
(UNIST, Korea)
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B-2-01
Co-integration of ReRAM with OTS back-end selector for high density Crosspoint arrays
Gabriel Molas
(CEA-Leti, France)
Area 3 Interconnect / 3D Integrations / MEMS
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C-6-01
"An overview of recent trends in ALD/CVD chemistry for Advanced IC interconnects
"
Jean-Marc Girard
(Air Liquide Advanced Materials, France)
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C-5-01
Haptic MEMS Based on Novel Ultra-Thin MEMS Technology
Takeshi Kobayashi
(AIST, Japan)
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C-4-01
mmWave Front End Antenna Package and High Bandwidth Component By LTCC Technology
Chun-An Lu
(ITRI, Taiwan)
Area 4 Power / High-speed Devices and Materials
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D-3-01
Progress in CMOS Integration in Wide-bandgap Electronics
Samuel James Bader
(Cornell Univ., USA)
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D-4-01
Reduction of Interface State Density in the SiC MOS Structures by a Non-oxidation Process
Tsunenobu Kimoto
(Kyoto Univ., Japan)
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D-2-01
Performance Comparison of Scaled IGBTs and CIGBTs
Sankara Narayanan Ekkanath Madathil
(The Univ. of Sheffield, UK)
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D-6-01
Recent progress in crystal growth of β–Ga2O3 for power-device applications
Kohei Sasaki
(Novel Crystal Tech., Inc., Japan)
- D-1-01 RF GaN HEMT Product and Application for Base Station Norihiko Ui (Sumitomo Electric Device Innovations, Inc., Japan)
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D-7-01
GaN-on-Si Power Device Platform: Epitaxy, Device, Reliability and Application
Roy King-Yuen Wong
(Innoscience Tech., China)
Area 5 Photonics: Devices / Integration / Related Technology
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E-2-01
Programmable Silicon Photonics
Wim Bogaerts
(Ghent Univ. - IMEC, Belgium)
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E-6-01
Towards efficient GeSn laser sources on mid-IR photonic platform
Mustafa El-Kurdi
(C2N-Université-Paris-Saclay/CNRS, France)
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E-5-01
Recent advances in terahertz quantum cascade lasers based on difference-frequency generation
Kazuue Fujita
(Hamamatsu Photonics, Japan)
Area 6 Photovoltaics / Energy Harvesting / Battery-related Technology
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F-5-01
Roadmap for Industrial Mass Production Equipment for High Efficiency Silicon Heterojunction Solar Cells
Xuemei Cheng
(Singulus Technologies AG, Germany)
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F-2-01
Li+ Transport Mechanism at the Heterogeneous Cathode/Solid Electrolyte Interface in an All-Solid-State Battery via the First-Principles Structure Prediction Scheme
Bo Gao
(NIMS, Japan)
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F-6-01
Monolithic 2-Terminal Perovskite/CIGS Tandem Solar Cells
C. A. Kaufmann
(HZB, Germany)
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F-1-01
MEMS Energy Harvester Adaptable to Environmental Vibrations
Hiroshi Toshiyoshi
(The Univ. of Tokyo, Japan)
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F-4-01
Impact and Recent Approaches of High-efficiency Solar Cell Modules for PV-powered Vehicles
Masafumi Yamaguchi
(Toyota Technological Inst., Japan)
Area 7 Organic / Molecular / Bio-electronics
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G-2-01
Direct roll transfer printed transistors for high-performance flexible electronics
Ravinder S. Dahiya
(Univ. of Glasgow, UK)
- G-2-02 Sharp Switching Printed Thin-Film Transistors based on Highly Layered-Crystalline Organic Semiconductors Tatsuo Hasegawa (The Univ. of Tokyo, Japan)
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G-1-01
Modulation spectroscopies for the characterization of the electronic transport properties in organic solar cells
Hiroyoshi Naito
(Osaka Prefecture Univ., Japan)
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G-6-05
Advances in Aperture-Suspended Bilayers for Parallel Ion Channel Recordings
Maurits de Planque
(Univ. of Southampton, UK)
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G-5-01
Functional Visualization of Biomolecules by FM-AFM and 3D Force Mapping Method
Hirofumi Yamada
(Kyoto Univ., Japan)
Area 8 Low Dimensional Devices and Materials
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H-2-06
Controlled Growth of Hexagonal Boron Nitride and Heterostructures with Graphene
Hiroki Hibino
(Kwansei Gakuin Univ., Japan)
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H-4-01
Control of Carrier Dynamics in Quantum Dots for Intermediate-Band Solar Cells
Takashi Kita
(Kobe Univ., Japan)
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H-6-01
Hybrid III-V/Si photonic device integration based on template-assisted selective epitaxy
Kirsten Moselund
(IBM Research Zurich, Switzerland)
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H-2-01
GaBiAs-based Core-Shell and Core-Multishell Nanowires for Greener Photonic Devices
Muhammad Usman
(The Univ. of Melbourne, Australia)
- H-5-01 One-dimensional van der Waals heterostructures for devices Rong Xiang (The Univ. of Tokyo, Japan)
Area 9 Novel Functional / Quantum / Spintronic Devices and Materials
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I-6-01
Materials with Exchange Coupling Profiles for nm-scale Magnetization State Control
Andreas Berger
(CIC nanoGUNE BRTA, Spain)
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I-5-01
Numerical simulation of reservoir computing with patterned nano-magnets
Hikaru Nomura
(Osaka Univ., Japan)
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I-1-01
Photon-spin quantum interface using gate-defined quantum dots combined with nano-photonic structures
Akira Oiwa
(Osaka Univ., Japan)
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I-2-01
Memristive Neurons and Synapses for Bioinspired Computing
Rui Yang
(Huazhong Univ. of Sci. and Tech., China)
Area 10 Thin Film Electronics: Oxide / Non-single Crystalline / Novel Process
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J-6-01
Multilayer metal oxide transistors manufactured with light
Thomas Anthopoulos
(KAUST, Saudi Arabia)
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J-5-01
Complementary Thin-Film Transistor Technology Based on Oxide Semiconductors
I-Chun Cheng
(National Taiwan Univ., Taiwan)
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J-4-01
Group-IV materials grown on insulator for advanced thin-film thermoelectric applications
Masashi Kurosawa
(Nagoya Univ., Japan)
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J-2-01
Contact-controlled transistors in digital and analog applications: specific challenges in thin-film silicon and oxide technologies
Radu Sporea
(Univ. of Surrey, UK)
Area 11 Advanced Materials: Synthesis / Crystal Growth / Characterization
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K-1-01
2.5 Dimensional Materials: New Frontier of Atomic Layers
Hiroki Ago
(Kyushu Univ., Japan)
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K-2-07
Stretchable and printable electrical conductors for wearable technology
Pooi See Lee
(Nanyang Technological Univ., Singapore)
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K-6-01
Si and SiGe Epitaxial Growth in view of Nanosheet CMOS Devices and 3D Sequential Integration
Roger Loo
(imec, Belgium)
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K-4-01
Multicrystalline Informatics for High-Performance Crystals
Noritaka Usami
(Nagoya Univ., Japan)
Area 12 Advanced Circuits / Systems Interacting with Innovative Devices and Materials
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L-3-01
Towards 100 GHz Ultra-High-Speed Superconductor Computing
Koji Inoue
(Kyushu Univ., Japan)
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L-2-01
Physical Attack Protection Techniques in IC Chips for IoT Security
Makoto Nagata
(Kobe Univ., Japan)
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L-5-01
Digitalized Power Electronics for Incorporating IoT and AI
Makoto Takamiya
(The Univ. of Tokyo, Japan)
PAGE CONTENTS
- Area 1 : Advanced CMOS: Material Science / Process Engineering / Device Technology
- Area 2 : Advanced and Emerging Memories / New Applications
- Area 3 : Interconnect / 3D Integrations / MEMS
- Area 4 : Power / High-speed Devices and Materials
- Area 5 : Photonics: Devices / Integration / Related Technology
- Area 6 : Photovoltaics / Energy Harvesting / Battery-related Technology
- Area 7 : Organic / Molecular / Bio-electronics
- Area 8 : Low Dimensional Devices and Materials
- Area 9 : Novel Functional / Quantum / Spintronic Devices and Materials
- Area 10 : Thin Film Electronics: Oxide / Non-single Crystalline / Novel Process
- Area 11 : Advanced Materials: Synthesis / Crystal Growth / Characterization
- Area 12 : Advanced Circuits / Systems Interacting with Innovative Devices and Materials