Rump Sessions

Rump Sessions will be held on September 4 from 17:00 to 18:30
at Toyoda Auditorium Meeting Room and Noyori Conference Hall

RUMP SESSION A Will Memory change in the age of
AI, IoT, VR/AR and 5G?

Toyoda Auditorium Meeting Room

This rump session highlights the advances in memory technology used for Artificial Intelligence (AI), Internet of Things (IoT), VR (Virtual Reality) / AR (Augmented Reality) and 5G communication.

Semiconductor memory technology is widely utilized for ultra-low power IoT applications and neural network calculations. The spread of 5G will drive the growth of semiconductor memory market. These trends are enabled by DRAM, NAND FLASH, high-density NVM, MRAM, circuit technology for machine learning, CMOS annealing as In-memory computing, and Atom Switch for non-volatile Field-Programmable Gate Array (FPGA). In this rump session, fundamental aspects of these enablers will be concisely reviewed by industrial and academic experts. The use cases for Information Technology (IT) and Operational Technology (OT) will be also introduced.

Promising future prospects and challenges to overcome the “R&D death valley” will be revealed. Anyone from semiconductor users to application developers is welcome to join and discuss value creation by various use cases and collaboration with customers.

Moderator:
  • Norikatsu Takaura Hitachi, Ltd. --- (IoT, Edge, and 5G)
Panelists:
  • Nahomi Aoto Micron Memory Japan --- (DRAM, NAND, NVM)
  • Daniel Bankman Stanford University --- (Circuits for Machine Learning)
  • Manuji Rathor Arm Ltd. --- (MRAM)
  • Munehiro Tada NEC Corporation --- (Atom Switch)
  • Chihiro Yoshimura Hitachi, Ltd. --- (CMOS Annealing for In-memory computing)

RUMP SESSION B Wide Band Gap and Silicon Power:
Vision to Reality

Noyori Conference Hall

In 1957, GE introduced p-n-p-n structure device, which is called silicon controlled rectifier (SCR), which is an alternative name of thyristor, with the price of 60USD for 300V-7A device. SCR commercialization triggered rapid advancement of “modern” power electronics. After SCR, GTO (1960s), Power MOSFEET (1970s) , IGBT (1980s) followed and contribute to power management and motor control. The device price has been dramatically reduced to couple of cents for 1 amp.

SiC device first commercialized in 1990s and GaN in 2000s. WBG devices are now  widely used from traction to mobile PC adapters and shows significant impact to miniaturization of the system and efficiency improvement. GaO and diamond are under R&D and they are very attractive for future power semiconductors for special applications.

In this session, six specialist from Si, SiC, GaN, GaO and diamond devices will explain the current status of the material-device technology development and show clear vision and impact to the future power semiconductor device commercialization.

Coordinator:
Digh Hisamoto Hitachi, Ltd.
Moderator:
Ichiro Omura Kyushu Institute of Technology
Panelists:
  • Hiroshi Amano Nagoya University --- (GaN)
  • Masataka Higashiwaki NICT
     --- (GaO)
  • Manabu Shimoyama SUMCO Corporation
     --- (Silicon)
  • Tomohide Terashima Mitsubishi Electric Corporation
     --- (SiC)
  • Yasuhiro Uemoto Panasonic Corporation
     --- (GaN)
  • Hitoshi Umezawa AIST --- (Diamond)
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