Committees

Organizing Committee

Chair

H. Amano (Nagoya Univ.)

Vice-chair

A. Kurobe (Toshiba Corp.)

Members

Y. Arakawa (Univ. of Tokyo)
T. Asano (Kyushu Univ.)
S. Chung (National Chiao Tung Univ.)
T. Endoh (Tohoku Univ.)
S. Fujita (Kyoto Univ.)
K. Hashimoto (Toshiba Memory Corp.)
H. Hidaka (Renesas Electronics Corp.)
T. Hiramoto (Univ. of Tokyo)
D. Hisamoto (Hitachi, Ltd.)
M. Izawa (Hitachi High-Technologies Corp.)
T. Kanayama (AIST)
M. Katayama (DENSO Corp.)
T. Kato (Fujitsu Laboratories Ltd.)
S. Kawaji (TOYOTA CENTRAL R&D LABS., INC.)
E. K. Kim (Hanyang Univ.)
M. Kimura (Murata Manufacturing Co., Ltd.)
M. Konagai (Tokyo City Univ.)
K. Masu (Tokyo Tech)
K. Matsumoto (Osaka Univ.)
Y. Miyamoto (Tokyo Tech)
S. Miyazaki (Nagoya Univ.)
K. Nakahara (Rohm Co., Ltd.)
M. Namba (NHK)
T. Oomori (Mitsubishi Electric Corp.)
M. Shirane (NEC Corp.)
H. Sobukawa (EBARA Corp.)
T. Sogawa (NTT Basic Res. Labs.)
T. Someya (Univ. of Tokyo)
T. Tanaka (Panasonic Corp.)
T. Tatsumi (Sony Semiconductor Solutions Corp.)
H. Ueda (Tokyo Electron Technology Solutions Ltd.)
H. Watanabe (HAMAMATSU PHOTONICS K.K.)

International Advisory Committee

Members

C. Y. Chang (National Endowed Chair Professor, Taiwan / President Emeritus, National Chiao Tung University, Taiwan / National Academy of Engineering, USA)
G. Declerck (Board Member imec International / Professor Emeritus KULeuven)
L. Esaki (President, Yokohama University of Pharmacy / Chairman, The Science and Technology Promotion Foundation of Ibaraki)
K. v. Klitzing (Prof. Dr., Max-Planck-Institut FKF)
D. L. Kwong (Executive Director, Institute for Infocomm Research / Executive Director, Institute of Microelectronics / Agency for Science, Technology and Research)
Y. Nishi (Professor Emeritus, Stanford University)
K. H. Ploog (Director (retired), Paul Drude Institute for Solid State Electronics)
T. Sugano (Professor Emeritus, The University of Tokyo)
K. Takahashi (Professor Emeritus, Tokyo Institute of Technology)

Steering Committee

Chair

J. Suda (Nagoya Univ.)

Vice-Chair

H. Mizuta (JAIST)

Secretary

K. Makihara (Nagoya Univ.)
M. Sakashita (Nagoya Univ.)

Members

C. Y. Chang (TSMC)
M. Deki (Nagoya Univ.)
M. Ezaki (Toshiba Corp.)
M. Horita (Nagoya Univ.)
D. Imai (Meijyo Univ.)
S. H. Kim (KAIST)
A. Kojima (Toshiba Corp.)
J. Kojima (DENSO Corp.)
H. Kondo (Nagoya Univ.)
M. Kushimoto (Nagoya Univ.)
K. Kutsuki (TOYOTA CENTRAL R&D LABS., INC.)
R. Miyagawa (Nagoya Inst. of Tech.)
A. Ohta (Nagoya Univ.)
S. Shibayama (Nagoya Univ.)
Y. Shimura (Shizuoka Univ.)
T. Takahashi (JEOL Ltd.)
W. Takeuchi (Aichi Inst. of Tech.)
H. Tanaka (Nagoya Univ.)
N. Taoka (Nagoya Univ.)
T. Tsutsumi (Nagoya Univ.)
R. Zhang (Zhejiang Univ.)

Program Committee

Chair

H. Fujioka (Univ. of Tokyo)

Vice-Chair

K. Uchida (Univ. of Tokyo)
F. Boeuf (STMicroelectronics)

Secretary

K. Toko (Univ. of Tsukuba)
K. Nishiguchi (NTT Basic Res. Labs.)
K. Kakushima (Tokyo Tech)

JJAP Special Issues Editors

H. Yaguchi (Saitama Univ.)
M. Takenaka (Univ. of Tokyo)
T. Hosoi (Osaka Univ.)

Area 1 Advanced CMOS: Material Fundamentals, Process Science and Device Physics

Chair

H. Morioka (Socionext Inc.)

Vice-Chair

M. Kobayashi (Univ. of Tokyo)
O. Nakatsuka (Nagoya Univ.)
F. L. Yang (Academia Sinica)

Member

H. Arimura (IMEC)
S. Cho (Gachon Univ.)
R. Huang (Peking Univ.)
H. Itokawa (Toshiba Memory Corp.)
M. Kadoshima (Renesas Electronics Corp.)
H. Kageshima (Shimane Univ.)
Y. Kamakura (Osaka Inst. of Tech.)
C. Lee (Zhejiang Univ.)
M. H. Liao (National Taiwan Univ.)
T. Matsukawa (AIST)
N. Mise (Hitachi High-Technologies Corp.)
G. Nakamura (Tokyo Electron Ltd.)
H. Oishi (Sony Semiconductor Solutions Corp.)
N. Planes (STMicroelectronics)
P. Su (NCTU)
S. Takeda (NAIST)
O. Weber (CEA-Leti)
K. Yamamoto (Kyushu Univ.)

Area 2 Advanced / Emerging Memories and New Applications

Chair

K. Yamamoto (Toshiba Memory Corp.)

Vice-Chair

K. Kinoshita (Tokyo Univ. of Science)
S. Jeon (KAIST)

Member

L. Grenouillet (CEA-Leti)
Y. Hikosaka (Fujitsu Semiconductor Ltd.)
A. Himeno (Panasonic Corp.)
Y. Jono (Micron Memory Japan, G.K)
I. Kataeva (DENSO Corp.)
M. H. Lee (Macronix International Co., Ltd.)
H. J. Lim (Samsung Electronics Co., Ltd.)
H. Sato (Tohoku Univ.)
T. Sakamoto (NEC Corp.)
W. T. Sun (eMemory Technology Inc.)
N. Takaura (Hitachi, Ltd.)

Area 3 Interconnect / 3D Integrations / MEMS

Chair

M. B. Takeyama (Kitami Inst. of Tech.)

Vice-Chair

M. Mariappan (Tohoku Univ.)
K. Shiojima (Univ. of Fukui)
J. M. Song (National Chung Hsing Univ.)

Member

J. De Messemaeker (IMEC)
A. Isobayashi (Toshiba Corp.)
H. Kitada (Fujitsu Labs. Ltd.)
M. Kodera (Moses Lake Industries, Inc.)
T. Minari (NIMS)
T. Nogami (Principal Research Staff Member, IBM Research)
Y. Orii (NAGASE & CO., LTD.)
M. Ueki (Sony Semiconductor Manufacturing Corp.)

Area 4 Power Devices / High-speed Devices, and Materials

Chair

D. Hisamoto (Hitachi, Ltd.)

Vice-Chair

N. Iwamuro (Univ. of Tsukuba)
K. Tsuda (Toshiba Infrastructure Systems & Solutions Corp.)
M. Wang (Peking Univ.)

Member

C. R. Bolognesi (ETH Zurich)
H. Y. Cha (Hongik Univ.)
H. Fujiwara (Toyota Motor Corp.)
S. Harada (Nagoya Univ.)
K. Hirama (NTT Basic Res. Labs.)
K. Kakushima (Tokyo Tech)
K. Lee (National Taiwan Univ.)
T. Matsudai (Toshiba Electronic Devices & Storage Corp.)
S. Ohmagari (AIST)
T. Oshima (FLOSFIA INC.)
S. Ozaki (Fujitsu Labs. Ltd.)
M. Sometani (AIST)
S. Suzuki (Tokyo Tech)
T. Suzuki (JAIST)
T. Terashima (Mitsubishi Electric Corp.)
M. Yanagihara (Panasonic Corp.)

Area 5 Photonics: Devices, Integration and Related Technology

Chair

N. Nishiyama (Tokyo Tech)

Vice-Chair

T. Tawara (NTT Basic Res. Labs.)
F. Boeuf (STMicroelectronics)

Member

M. D. Birowosuto (Nanyang Technological Univ.)
G. Cong (AIST)
K. Hassan (Leti)
A. Hayakawa (Fujitsu Labs. Ltd.)
K. Kitamura (Kyoto Inst. of Tech.)
S. Kuboya (Mie Univ.)
D. Okamoto (PETRA)
N. Ozaki (Wakayama Univ.)
M. Shirao (Mitsubishi Electric Corp.)
L. Vivien (Univ. of Paris Sud)
M. Watanabe (Sumitomo Electric Industries, Ltd.)

Area 6 Photovoltaic / Energy Harvesting / Battery-related Technology

Chair

M. Ikegami (Toin Univ. of Yokohama)

Vice-Chair

Y. Kurokawa (Nagoya Univ.)
L. S. Hong (TECRO)

Member

H. Araki (National Institute of Technology, Nagaoka College)
M. Chikamatsu (AIST)
C. W. Chu (Academia Sinica)
K. Dokko (Yokohama National Univ.)
T. Horiuchi (Ricoh Co., Ltd.)
T. Hoshii (Tokyo Tech)
T. Kato (SHOWA SHELL SEKIYU K.K.)
A. Limmanee (NSTDA)
M. Motoyama (Nagoya Univ.)
K. Nakada (Tokyo Tech)
H. Shinohara (CEREBA)
S. Shiraki (Nippon Inst. of Tech.)
H. Suzuki (Univ. of Miyazaki)
T. Taima (Kanazawa Univ.)
T. Tayagaki (AIST)

Area 7 Organic / Molecular / Bio-electronics

Chair

T. Tanaka (Tohoku Univ.)

Vice-Chair

H. Okada (Univ. of Toyama)
T. Shimada (Hokkaido Univ.)
C. H. Liu (National Tsing Hua Univ.)

Member

M. Ando (Hitachi, Ltd.)
H. M. Chen (NCTU)
N. Clement (IIS/CNRS Univ. of Tokyo)
H. Endoh (NEC Corp.)
A. Fujii (Osaka Univ.)
A. Hirano (Tohoku Univ.)
Y. Kashimura (NTT Basic Res. Labs.)
S. Kumagai (Meijo Univ.)
T. Matsushima (Kyushu Univ.)
S. Nakajima (Japan Aviation Electronics Ind., Ltd.)
M. Nakamura (NAIST)
C. A. Nijhuis (NUS)
T. Sakata (Univ. of Tokyo)
K. Takei (Osaka Prefecture Univ.)
H. Tanaka (Panasonic Corp.)
R. Tero (Toyohashi Tech)
T. Tokuda (Tokyo Tech)

Area 8 Low Dimensional Devices and Materials

Chair

K. Nagashio (Univ. of Tokyo)

Vice-Chair

S. Hara (Hokkaido Univ.)
H. Tan (Australian National Univ.)

Member

T. Arie (Osaka Prefecture Univ.)
F. Ishikawa (Ehime Univ.)
R. Kaji (Hokkaido Univ.)
T. Kato (Tohoku Univ.)
K. Kawaguchi (Fujitsu Labs. Ltd.)
T. Kawanago (Tokyo Tech)
T. Mano (NIMS)
S. Nakaharai (NIMS)
M. Takamura (NTT Basic Res. Labs.)
T. Takenobu (Nagoya Univ.)
T. Yanagida (Kyushu Univ.)

Area 9 Novel Functional / Quantum / Spintronic Devices and Materials

Chair

A. Oiwa (Osaka Univ.)

Vice-Chair

T. Ono (Kyoto Univ.)
K. Terabe (NIMS)
P. W. Li (NCTU)

Member

K. Aoshima (Japan Broadcasting Corp.)
M. Ishida (NEC Corp.)
Y. Kaneko (Panasonic Corp.)
S. Kawabata (AIST)
T. Kodera (Tokyo Tech)
T. Miyazawa (Fujitsu Labs. Ltd.)
K. Nemoto (NII)
Y. Nishi (Toshiba Corp.)
J. Nitta (Tohoku Univ.)
S. Ohya (Univ. of Tokyo)
K. Ota (Toshiba Memory Corp.)
B. G. Park (KAIST)
H. Sanada (NTT Basic Res. Labs.)
H. Shimizu (Tokyo Univ. of Agri. & Tech.)
H. Yang (NUS)
H. Yuasa (Kyushu Univ.)

Area 10 Thin Film Electronics: Oxide, Non-single Crystalline and Novel Process

Chair

S. Higashi (Hiroshima Univ.)

Vice-Chair

M. Furuta (Kochi Univ. of Tech.)
S. H. K. Park (KAIST)

Member

K. Hayashi (Kobe Steel, Ltd.)
H. Ikenoue (Kyushu Univ.)
N. Itagaki (Kyushu Univ.)
H. Kakiuchi (Osaka Univ.)
T. Kamiya (Tokyo Tech)
K. Koga (Kyushu Univ.)
J. Koyama (Semiconductor Energy Laboratory Co.,LTD.)
S. Kuroki (Hiroshima Univ.)
P. T. Liu (NCTU)
H. Odaka (AGC Inc.)
K. Takechi (Tianma Japan, Ltd.)
T. Tezuka (Toshiba Memory Corp.)
K. Toko (Univ. of Tsukuba)
W. Yeh (Shimane Univ.)

Area 11 Advanced Materials Synthesis, Crystal Growth and Characterization

Chair

A. Kikuchi (Sophia Univ.)

Vice-Chair

H. Tatsuoka (Shizuoka Univ.)
W. W. Wu (NCTU)

Member

O. Bierwagen (Paul-Drude-Institut)
A. Heya (Univ. of Hyogo)
T. Hoshi (NTT Device Tech. Labs.)
S. Ogawa (Toray Research Center, Inc.)
T. Sadoh (Kyushu Univ.)
Y. Tominaga (Hiroshima Univ.)
K. Watanabe (Tohoku Univ.)
J. Yamaguchi (Fujitsu Labs. Ltd.)
T. Yamaguchi (Kogakuin Univ.)

Special Advanced Circuits/Systems Interacting with Innovative Devices & Materials

Chair

R. Kuroda (Tohoku Univ.)

Vice-Chair

K. Johguchi (Shinshu Univ.)
H. Majima (Toshiba Electronic Devices & Storage Corp.)
H. Lin (National Chung Hsing Univ.)

Member

J. C. Guo (NCTU)
D. Kanemoto (Osaka Univ.)
T. Minotani (NTT Device Tech. Labs.)
K. Niitsu (Nagoya Univ.)
Y. Ogasahara (AIST)
K. Takeuchi (Chuo Univ.)
T. Yoshida (Hiroshima Univ.)

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