Invited Speakers

Area 1 Advanced CMOS: Material Fundamentals, Process Science and Device Physics

• C-1-01
  Gate-All-Around Transistors Based on Vertically Stacked Si Nanowires: Recent Progress in CMOS Integration and in Advanced Inline Metrology
  Hans Mertens(IMEC, Belgium)
• B-6-01
  Atomic Layer Etching - Breaking Through the Limitation of Etch
  Kazuo Nojiri(Lam Research Co., Ltd., Japan)
• C-5-01
  Importance of Self-Consistent and Transient Technology Computer-Aided Design Simulation of a Negative Capacitance Transistor
  Hiroyuki Ota (AIST, Japan)
• J-8-01
  Emerging Hardware Substrates for Boolean and Non-Boolean Computing
  Nikhil Shukla(Univ. of Virginia, USA)
• C-3-01
  Atomic Sites of Dopants in Si Visualized by Spectro-Photoelectron Holography
  Kazuo Tsutsui(Tokyo Tech, Japan)

Area 2 Advanced / Emerging Memories and New Applications

• B-4-01
  Prospects of Nonvolatile Logic LSI Using MTJ/MOS-Hybrid Circuitry and Its Application
  Takahiro Hanyu(Tohoku Univ., Japan)
• B-2-01
  New Development and characterization of Oxide-based Selector for
  Cross-Point 25-nm ReRAM
  Soo Gil Kim(SK Hynix Inc., Korea)
• B-7-01
  Progress of Single-Gate Vertical Channel (SGVC) 3D NAND Technology and Introduction of 3D AND-type NVM
  Hang-Ting Lue(Macronix International Co., Ltd., Taiwan)
• B-3-01
  Neuromorphic Computing with memristive devices and arrays
  Jianhua (Joshua) Yang(Univ. of Massachusetts Amherst, USA)
• B-1-01
  Highly reliable ReRAM for embedded memory and beyond applications
  Shinichi Yoneda(Panasonic Semiconductor Solutions Co., Ltd., Japan)
• C-6-01
  Investigation of Ferroelectric Switching Mechanism and Improvement of Switching Speed in Si doped HfO₂ for FeRAM Application
  Hyangkeun Yoo(SK Hynix Inc., Korea)

Area 3 Interconnect / 3D Integrations / MEMS

• G-3-01
  A Moore's law for Packaging
  Subramanian S. Iyer(UCLA, USA)
• G-4-01
  Low Temperature and Non-Vacuum Surface Modification for Robust Hybrid Bonding
  Akitsu Shigetou(NIMS, Japan)
• G-1-01
  Fully Aligned Via Integration for beyond 7nm
  Devika Sil(IBM Research, USA)
• G-6-01
  Conductor trends for future interconnects
  Zsolt Tokei(IMEC, Belgium)
• G-7-01
  MEMS Vibrational Energy Harvesters for Perpetual Electronics
  Hiroshi Toshiyoshi(Univ. of Tokyo, Japan)

Area 4 Power / High-speed Devices, and Materials

• D-5-01
  Advances in InP Double Heterojunction Bipolar Transistors
  Colombo Bolognesi(ETH Zurich, Switzerland)
• D-4-01
  Evolution and Prospects of Gallium Oxide-Based Materials and Power Devices
  Shizuo Fujita(Kyoto Univ., Japan)
• D-6-01
  State of the art and Future Prospective of Si-IGBT Technologies
  Thomas Laska (Infineon Technologies AG, Germany)
• D-2-01
  Inversion Layer Mobility of SiC MOSFETs with Thermally Grown Oxide
  : Effect of Post-Oxidation Nitridation and Gate Oxide Thickness
  Munetaka Noguchi(Mitsubishi Electric Corp., Japan)
• D-7-01
  Recent Topics of Vertical GaN Power Devices - Trench MOS SBDs and Trench MOSFETs -
  Tohru Oka(Toyoda Gosei Co., Ltd., Japan)
• D-1-01
  Novel Vertical GaN Power Devices
  Tomas Palacios(MIT, USA)
• D-3-01
  Diamond Electronics: Past Perspectives and Future Prospects
  Hitoshi Umezawa (AIST, Japan)

Area 5 Advanced Photonics: Devices, Integration and Related Technology

• H-3-01
  Technological advances on CMOS compatible hybrid III-V/Si lasers in 200mm platform
  Karim Hassan(CEA - LETI, France)
• H-3-04
  III-V/Si Photonic Integration Platform for On-Si Laser Diodes and High Efficiency Mach-Zehnder Modulators
  Tatsurou Hiraki(NTT Device Technology Labs., Japan)
• J-7-01
  High Power Slow Light VCSEL Amplifier for LiDAR Applications
  Fumio Koyama(Tokyo Tech, Japan)
• H-8-01
  High Performance III-nitride Photodetectors Using Nanoplasmonic Effects
  Dabing Li(Chinese Academy of Sci., China)
• H-1-01
  Elastic Strain Engineering of Group IV Materials for Low-Threshold On-Chip Lasers
  Donguk Nam(Nanyang Technological Univ., Singapore)
• H-2-01
  Artificial neural networks based on Mach-Zehnder interferometers in a Si PIC
  Yichen Shen(MIT, USA)

Area 6 Photovoltaic / Energy Harvesting / Battery-related Technology

• F-6-01
  Light Trapping in Colloidal Quantum and Silicon Nanowire Solar Cells
  Michael Adachi(Simon Fraser Univ., Canada)
• F-1-01
  Requirements and Testing Protocols for Lithium Metal Secondary Batteries
  Tim Holme(Quantumscape Corp., USA)
• F-3-01
  Up-Scaling Strategies of Perovskite Solar Cells and Modules
  Luis. K. Ono(OIST, Japan)
• F-2-01
  High-capacity positive electrode materials with cationic/anionic redox for non-aqueous batteries
  Naoaki Yabuuchi(Yokohama National Univ., Japan)
• F-4-01
  Flexible Perovskite Solar Cells
  Longkai Yang(LEADVANCED (Shanghai) Photovoltaic Technology Co. Ltd., China)

Area 7 Organic / Molecular / Bio-electronics

• K-1-01
  Hyperfluorescence™, a Game Changing Technology of OLED Displays
  Junji Adachi(Kyulux Inc., Japan)
• J-5-01
  Wireless interface in biomedical applications
  Sanghoek Kim(Kyung Hee Univ.)
• K-4-01
  Research on Organic Resistive Memory Devices: Integration and Mechanism
  Takhee Lee(Seoul National Univ., Korea)
• K-7-01
  Odor Sensing System with Multi-dimensional Data Analysis
  Takamichi Nakamoto(Tokyo Tech, Japan)
• K-3-01
  BEAMing (Beads, Emulsion, Amplification, Magnetics) on a Chip for Liquid Biopsy in Clinical Diagnostics
  Ayato Tagawa(Sysmex Corp., Japan)
• K-8-01
  Predictive Modelling of Supramolecular Assemblies
  Damien Thompson (Univ. of Limerick , Ireland)

Area 8 Low Dimensional Devices and Materials

• M-1-01
  Indistinguishable quantum-dot single-photon-sources on a reconfigurable photonic integrated circuit
  Anthony J. Bennett(Toshiba Research Europe Ltd. / Cardiff Univ., UK)
• M-4-01
  Group IV nanowires as model systems to explore phase behaviour, nucleation and interface dynamics in nanoscale systems
  Stephan Hofmann(Univ. of Cambridge, UK)
• M-2-01
  2D Materials Heterostructures: Electronic and Optical Properties
  Tony Low(Univ. of Minnesota, USA)
• M-3-01
  High-performance and low-power 2D transition-metal dichalcogenide
  field-effect transistors
  Xinran Wang(Nanjing Univ., China)
• M-6-01
  Using graphene as an epitaxial substrate and transparent electrode for GaN/AlGaN UV LEDs
  Helge Weman(NTNU/CrayoNano, Norway)

Area 9 Novel Functional / Quantum / Spintronic Devices and Materials

• A-2-01
  Ultralow-Power and Compact Nonvolatile Brain-Inspired VLSIs Based on CMOS/MTJ Hybrid Technology
  Tetsuo Endoh(Tohoku Univ., Japan)
• A-6-01
  Skyrmions in magnetic multilayers: materials physics and device applications
  Wanjun Jiang(Tsinghua Univ., China)
• A-1-01
  Spintronics in 2D Materials
  Roland Kawakami(The Ohio State Univ., USA)
• A-5-01
  Nonreciprocal Electronic Devices for Matter Waves
  Jochen Mannhart(Max Planck Inst. for Solid State Research, Germany)
• A-4-01
  Microscopic Mechanism of the Electric-Field Effects on Spintronics Devices Elucidated by X-ray Magnetic Circular Dichroism Spectroscopy
  Motohiro Suzuki (JASRI, Japan)
• A-7-01
  Controlling spin-orbit interaction in scalable silicon-MOS quantum dot architectures
  Tuomo Tanttu(The Univ. of New South Wales, Australia)
• A-2-03
  Using (emerging) memories for machine learning hardware
  Diederik Verkest(IMEC, Belgium)
• A-2-02
  Saving Energy Consumption of Memory Systems by Voltage-Control Spintronics Memory (VoCSM)
  Hiroaki Yoda(Toshiba Corp., Japan)

Area 10 Thin Film Electronics: Oxide, Non-single Crystalline and Novel Process

• N-6-01
  Solution-processed organic-inorganic perovskite thin film transistors
  Toshinori Matsushima(OPERA, Kyushu Univ., Japan)
• N-8-01
  Development of GeSn-related group-IV thin films for designing energy band
  Osamu Nakatsuka(Nagoya Univ., Japan)
• N-3-01
  Development of spinel-type ZnGa₂O₄ thin-film transistor and its application to flexible devices
  Makoto Nakazumi(Nikon Corp., Japan)
• N-1-01
  Electronic, Thermal, and Unconventional Applications of 2D Materials
  Eric Pop(Stanford Univ., USA)

Area 11 Advanced Materials Synthesis and Advanced Characterization

• E-5-01
  New insights into doping behavior of catalyst-free (In,Ga)As-based nanowires
  Gregor Koblmueller(Technical Univ. of Munich, Germany)
• E-7-01
  High-quality diamond epitaxial layer growth and electron devices application
  Yasuo Koide(NIMS, Japan)
• E-3-01
  Photoemission Study of Gate Dielectrics and Stack Interfaces
  Seiichi Miyazaki(Nagoya Univ., Japan)
• E-7-02
  HVPE growth of bulk GaN and Homoepitaxy for Device Applications
  Ke Xu(Chinese Academy of Sci., China)

Special Advanced Circuits/Systems Interacting with Innovative Devices & Materials

Topical session 1: Ion/photon coupled systems

Overview: As solid state devices and materials are utilized more than ever in bio, battery, optical sensing/communication applications and so on, ion and/or photon coupled system integrations are increasing their importance. In order to maximize the functionalities of those ion/photon coupled systems, circuit/system and device engineers must understand fundamentals of ionic and photonic behaviors and utilize them into circuit/system design. In the topical session 1, Professor Kazuaki Sawada of Toyohashi Univ. of Technology and Professor Jun Ohta of NAIST will talk about fundamentals of ion and photon coupled systems, and advanced researchers will present their latest works in this field.

• J-2-02
  Ion Sensor Array For Electronics – Biological Matter Interface
  Kazuaki Sawada(Toyohashi Tech, Japan)
• J-2-01
  Implantable optoelectronic devices for biomedical applications
  Jun Ohta(NAIST, Japan)
• J-6-01
  Applications of chemical imaging sensor in the field of electrochemistry
  Ko-ichiro Miyamoto(Tohoku Univ., Japan)
• J-5-02
  An Energy-Autonomous Biomedical IoT Platform Using Human Computer Ion-Coupled Energy Interaction for Next-Generation Diabetes Care
  Kiichi Niitsu(Nagoya Univ., Japan)
• J-7-02
  Advanced LiDAR SoC for Automobile Range-Imaging
  Akihide Sai(Toshiba Corp., Japan)
• J-3-01
  The Design of Voltage and Current Acquisition Front-Ends for
  Brain-Machine Interface
  Jie George Yuan(Hong Kong Univ. of Sci. & Tech., Hong Kong)

Topical session 2: Innovative device based circuits

Overview: Researches on new materials and device structures such as Tunnel FET, Negative Capacitance FET, Graphene, CNT, 2D FETs, Memristors, and so on aiming for further supply voltage reduction and adding more functionalities to LSI have been very active. In order to practically apply these innovative devices into actual circuits and systems, research activities to directly link between processes, materials, devices researches and circuits and systems design are vital. In the topical session 2, Professor Vijaykrishnan Narayanan of the Pennsylvania State Univ. will talk about the whole picture in this research field, and the world delegates will talk about researches on modeling, benchmarking, novel circuits and system architectures leveraging the advanced characteristics of new materials and devices and demonstrate latest system level integrations.

• J-1-01
  Technology-Driven Emerging Computational Models and Systems
  Vijaykrishnan Narayanan(The Pennsylvania State Univ., USA)
• J-8-02
  Emerging Memory Based Circuits for Beyond von Neumann Applications: Nonvolatile-Logic and Computing-in-Memory
  Meng-Fan Chang(National Tsing Hua Univ., Taiwan)
• J-4-01
  Extremely Low Power LSI Using Crystalline Oxide Semiconductor Transistor
  Tatsuya Onuki(Semiconductor Energy Lab. Co., Ltd., Japan)
• J-1-02
  An Ultra-Low-Power High-Speed Cache Memory Comprising Hybrid
  TFET-FinFET SRAM Cells
  Massoud Pedram(Univ. of Southern California, USA)
• J-3-02
  Carbon nanotube based high performance CMOS and optoelectronic devices and integrated systems
  Lian-Mao Peng(Peking Univ., China)
• J-8-03
  Evaluation of Negative Capacitance Ferroelectric Field-Effect Transistors For Low Power Circuit Applications
  Xiao Gong(National Univ. of Singapore, Singapore)