Japanese Journal of Applied Physics
Vol. 57, No. 4S, Apr. 2018
Solid State Devices and Materials

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The papers in this special issue are open access for one year from the publication.

This special issue focuses on the 2017 International Conference on Solid State Devices and Materials (SSDM2017) held at Sendai International Center, Sendai, Japan, from September 19 to 22, 2017, under the sponsorship of the Japan Society of Applied Physics. The purpose of the conference was to bring together scientists and engineers active at the forefront of solid-state devices and materials development and to discuss the latest progress in their respective fields. Through deep discussions, the conference also acted to promote science and industry related to solid-state electronics. SSDM2017 covered a broad area of research and development of significant innovation/improvement of devices and materials, and processing technologies. The 2017 program featured 3 plenary talks, 67 invited papers, 257 contributed oral papers, 168 posters, and 60 late news papers. The conference topics are listed below:

  • 1) Advanced LSI Processing & Materials Science
  • 2) Interconnect Technologies, MEMS, and Reliability
  • 3) CMOS Devices/Device Physics
  • 4) Advanced Memory Technology
  • 5) Advanced Circuits and Systems
  • 6) Compound Semiconductor Electron Devices & Related Technologies
  • 7) Photonic Devices and Related Technologies
  • 8) Advanced Material Synthesis and Crystal Growth Technology
  • 9) Physics and Applications of Novel Functional Devices and Materials
  • 10) Organic Materials Science, Device Physics, Applications and Printed Technologies
  • 11) Sensors and Materials for Biology, Chemistry and Medicine
  • 12) Spintronics Materials and Devices
  • 13) Applications of Nanotubes, Nanowires, and Graphene and related 2D materials
  • 14) Power Devices and Materials
  • 15) Photovoltaic Materials and Devices

This special issue, published in April, 2018, includes submitted papers by authors who presented their results at the conference, and had their manuscripts accepted in time for publication through the regular reviewing process of the Japanese Journal of Applied Physics (JJAP). The papers are presented as progress review papers, regular papers and brief notes. We sincerely hope that readers who are working in the field of advanced solid-state devices and materials will find this special issue interesting, stimulating and useful.


  • Hiroyuki Kageshima (Shimane University)
  • Takuji Hosoi (Osaka University)
  • Satoshi Iwamoto (The University of Tokyo)
  • Takayuki Arie (Osaka Prefecture University)
  • Masahisa Fujino (The University of Tokyo)
  • Yuzo Fukuzaki (Sony Semiconductor Solutions Corporation)
  • Shunta Harada (Nagoya University)
  • Masashi Ikegami (Toin University of Yokohama)
  • Noriyuki Iwamuro (University of Tsukuba)
  • Koh Johguchi (Shinshu University)
  • Kuniyuki Kakushima (Tokyo Institute of Technology)
  • Haruichi Kanaya (Kyushu University)
  • Akihiko Kikuchi (Sophia University)
  • Kentaro Kinoshita (Tokyo University of Science)
  • Rihito Kuroda (Tohoku University)
  • Yasuyoshi Kurokawa (Nagoya University)
  • Kenzo Maehashi (Tokyo University of Agriculture and Technology)
  • Keiichi Maekawa (Renesas Electronics)
  • Toshiharu Makino (AIST/National Institute of Advanced Industrial Science and Technology)
  • Toshinori Matsushima (Kyushu University)
  • Toshitaka Miyata (Toshiba Memory Corporation)
  • Hiroshi Morioka (Socionext Inc.)
  • Mariappan Murugesan (Tohoku University)
  • Kosuke Nagashio (The University of Tokyo)
  • Takahiro Nagata (NIMS/National Institute for Materials Science)
  • Osamu Nakatsuka (Nagoya University)
  • Nobuhiko Nishiyama (Tokyo Institute of Technology)
  • Akira Oiwa (Osaka University)
  • Hiroyuki Okada (University of Toyama)
  • Teruo Ono (Kyoto University)
  • Toshitsugu Sakamoto (NEC)
  • Toshiya Sakata (The University of Tokyo)
  • Mizuki Shirao (Mitsubishi Electric)
  • Kazuo Sukegawa (Socionext Inc.)
  • Toshikazu Suzuki (Japan Advanced Institute of Science and Technology)
  • Hidetoshi Suzuki (University of Miyazaki)
  • Tetsuya Taima (Kanazawa University)
  • Tetsu Tanaka (Tohoku University)
  • Kohichi Tatsuoka (Shizuoka University)
  • Takehiko Tawara (NTT BRL)
  • Kunio Tsuda (Toshiba Infrastructure Systems & Solutions Corporation)
  • Kazuhiko Yamamoto (Toshiba Memory Corporation)