Invited Speakers

Area 1 Advanced LSI Processing & Materials Science

• E-2-01
  Stacked-Wires FETs for advanced CMOS scaling
  Sylvain Barraud(CEA-Leti, France)
• K-1-01
  Interface Dipole Layers between Two Dielectrics: Considerations on Physical Origins and Opportunities to Control Their Formation
  Koji Kita(Univ. of Tokyo, Japan)
• K-4-01
  Ion implantation technology for advanced ULSI devices
  Takashi Kuroi(Nissin Ion Equipment Co., Ltd., Japan)
• K-5-01
  CMOS Compatible Ferroelectric Devices for Beyond 1X nm Technology Nodes
  Halid Mulaosmanovic(NaMLab gGmbH, Germany)

Area 2 Interconnect Technologies, MEMS, and Reliability

• H-6-01
  Heterogeneous Integration Based on Low-Temperature Bonding for Advanced Optoelectronic Devices
  Eiji Higurashi(AIST/Univ. of Tokyo, Japan)
• H-2-01
  Pharmaceutical Contaminants and pH Sensing using MWCNTs based Electrodes
  Matiar R Howlader(McMaster Univ., Canada)
• H-1-01
  Nanocarbon application including interconnects and thermal interface materials
  Daiyu Kondo(Fujitsu Labs. Ltd., Japan)
  * Invited from ICEP2017
• H-3-01
  Effect of Metallization on the Microstructural Evolution of Microbump under Electric Current Stressing
  Kwang-Lung Lin(National Cheng Kung Univ., Taiwan)
• H-5-01
  Advanced Packaging Technology to Address Micro-bump Solder Bonding and Warpage in Large-die 3D IC using 22nm ULK Dielectrics
  Katsuyuki Sakuma(IBM T. J. Watson Research Center, USA)

Area 3 CMOS Devices / Device Physics

• E-3-01
  Performance Evaluation of III-V Nanowire Broken-Gap TFETs Including Electron-Phonon Scattering Using an Atomistic Mode Space NEGF Technique Enabling Million Atoms NW Simulations
  Aryan Afzalian(TSMC Europe BV, Belgium)
• E-1-01
  Reliability Characterizations for high-performace, low-power 10nm-FinFET technology
  Kihyun Choi(Samsung Electronics Co., Ltd., Korea)
• E-5-01
  Improvement of Device and Circuit Performance of Si-based Tunnel Field-Effect Transistors by Utilizing Isoelectronic Trap Technology
  Takahiro Mori(AIST, Japan)
• E-6-01
  Achieving BEOL footprint-efficient and low cost monolithic 3D+ IoT chip using low thermal budget laser technology
  Chih-Chao Yang(National Nano Device Labs., Taiwan)

Area 4 Advanced Memory Technology

• D-3-01
  “More-than-Neumann” and “Beyond-Neumann” Architectures
  Tetsuya Asai(Hokkaido Univ., Japan)
• A-5-04
  Key advanced technology for eMRAM development
  Junghyuk Lee(Samsung Electronics Co., Ltd., Korea)
• D-1-01
  Physical modeling of carbon nanotube based nanoelectromechanical memory cell SET and RESET operations
  Michael Stopa(Nantero, Inc., USA)
• A-8-01
  Transition Metal-Ge-Te Chalcogenides for PCRAM Material
  Yuji Sutou(Tohoku Univ. , Japan)
• D-2-01
  FinFET Split-Gate MONOS for Embedded Flash in 16/14nm-node and Beyond
  Shibun Tsuda (Renesas Electronics Corp., Japan)
• M-1-01
  CMOS Ising Computing for Combinatorial Optimization Problems
  Masanao Yamaoka(Hitachi, Ltd., Japan)

Area 5 Advanced Circuits and Systems

• G-7-01
  QZSS Short Message Synchronized SS-CDMA Communication
  Suguru Kameda(Tohoku Univ. , Japan)
• G-8-01
  Open Innovation of CMOS-MEMS Integrated Devices by Open Facility
  Yoshio Mita(Univ. of Tokyo, Japan)
• G-5-01
  Advanced Stacked CMOS Image Sensor Technology
  Yoshikazu Nitta(Sony Semiconductor Solutions Corp., Japan)
• G-6-01
  HPP: A Noval Architecture for High Performace Processing
  Zhiwei Zhang(Inst. of Automation, Chinese Academy of Sci., China)

Area 6 Compound Semiconductor Electron Devices
& Related Technologies

• N-4-01
  High Frequency GaN HEMTs for RF MMIC Applications
  David F. Brown(HRL Labs., USA)
• N-5-01
  Recent achievements and pending challenges in Gallium Nitride vertical device development
  Srabanti Chowdhury(Univ. of California, Davis, USA)
• N-1-01
  THz Circuitry Designs Based on InP and CMOS Devices
  Yoichi Kawano(Fujitsu Labs. Ltd., Japan)
• N-3-01
  Monolithically Integrated GaN-on-Si Power Circuits
  Richard Reiner(Fraunhofer IAF , Germany)

Area 7 Photonic Devices and Related Technologies

• C-5-01
  Integration of Photonics with Digital Processing Units
  Luca Alloatti(ETH Zürich, Switzerland)
• H-8-04
  Line Beam Scanner using Slow-Light Waveguides in Si Photonics
  Toshihiko Baba(Yokohama National Univ., Japan)
• A-1-04
  Functional Oxides for Photonics
  Jean Fompeyrine(IBM Research GmbH, Zurich Research Laboratory, Switzerland)
• G-2-01
  Current Status and Future of III-Nitride Ultraviolet and THz Emitters
  Hideki Hirayama(RIKEN, Japan)
• H-7-01
  High power Silicon laser based on the dressed photon technology
  Tadashi Kawazoe(Tokyo Denki Univ., Japan)

Area 8 Advanced Material Synthesis and
Crystal Growth Technology

• J-1-01
  Utilizing Reflection High Energy Electron Diffraction to Map Growth Windows in Hybrid Molecular Beam Epitaxy
  Roman Engel-Herbert(Pennsylvania State Univ., USA)
  → Cancelled
• N-2-01
  Recent Progress in MOCVD Technology:
  III-Nitrides and 2D Nanomaterials
  Michael Heuken(AIXTRON SE, Germany)
• M-3-01
  Recent progress of crystal growth, conductivity control and solar cells of semiconducting barium disilicide
  Takashi Suemasu(Univ. of Tsukuba, Japan)
• M-5-01
  Nanospectroscopic investigation of individual free-standing semiconductor nanowires using nanoprobe-cathodoluminscence techniques
  Kentaro Watanabe(Osaka Univ., Japan)

Area 9 Physics and Applications of
Novel Functional Devices and Materials

• M-2-02
  Emulating Synaptic Plasticity in Neuromorphic Systems with Resistive Memories
  Selina La Barbera(CEA-Leti, France)
• M-2-03
  Low Power Deep Neural Network Hardware Based on Memristive Crossbar Circuits
  Irina Kataeva(DENSO CORP., Japan)
• M-1-02
  Scalability of diamond-based quantum information devices
  Kae Nemoto(National Inst. of Informatics, Japan)
• M-2-01
  Memory devices in Neuromorphic Computing Systems
  Carlo Reita(CEA-Leti, France)
• C-6-01
  1D van der Waals Materials in 2D Form
  Peide Ye(Purdue Univ., USA)

Area 10 Organic Materials Science, Device Physics,
Applications and Printed Technologies

• B-3-01
  Fundamentals and Applications of Nano-molecular devices
  Nicolas Clement(NTT BRL, Japan)
• B-4-01
  The Excitonics in Photonic Colloidal Nanostructures and Devices
  Seonghoon Lee(Seoul National Univ., Korea)
• B-1-01
  Significant Lifetime Enhancement of Organic Light Emitting Diodes by Removing Residual Water during Device Fabrication
  Hideyuki Murata(JAIST, Japan)
• F-6-01
  Bioorganic Hybrid Nanomaterials in Optics, Electronics and Sensing
  Eugen Stulz(Univ. of Southampton, UK)
• B-2-01
  Flexible Printed Organic TFT Devices and Potential Applications
  Shizuo Tokito(Yamagata Univ., Japan)

Area 11 Sensors and Materials for
Biology, Chemistry and Medicine

• F-3-01
  Diamond Quantum Sensors for Biological Application
  Mutsuko Hatano(Tokyo Tech, Japan)
• F-2-01
  Biodevice Technologies for Cancer Diagnosis Using Exosome-based Biomarkers
  Takanori Ichiki(Univ. of Tokyo, Japan)
• F-4-01
  Integrated photonics for miniature flow cytometry
  Niels Verellen(IMEC, Belgium)
• F-1-01
  The Next Generation Biochip: The Development of Polysilicon Nanowire Effect Transistor Based Biosensor Array
  Yuh-Shyong Yang(National Chiao Tung Univ., Taiwan)

Area 12 Spintronics Materials and Devices

• A-1-02
  Magneto-optical Spatial Light Modulator for 3D Holographic Display
  Ken-ichi Aoshima(NHK Japan Broadcasting Corp., Japan)
• A-1-01
  Electric, Magnetic, and Optical Control of Multiferroics
  Masakazu Matsubara(Tohoku Univ., Japan)
• A-5-01
  Accumulative Magnetic Switching of Ultrahigh-Density Recording Media by Circularly Polarized Light
  Yukiko K. Takahashi (NIMS, Japan)
• A-2-01
  Magnetic Skyrmions in Confined Geometries
  Mingliang Tian(Chinese Academy of Sci., China)
• D-4-01
  Neuromorphic computing with spintronic nanoscale oscillators
  Jacob Torrejon(CNRS/Thales, France)

Area 13 Applications of Nanotubes, Nanowires, and
Graphene and related 2D materials

• J-6-01
  Synchrotron-based Characterization of Nanowires and Nanowire Devices
  Anders Mikkelsen(Lund Univ., Sweden)
• J-3-01
  Novel Graphene Devices
  Tian-Ling Ren(Tsinghua Univ., China)
• J-5-01
  Flexible Optoelectronic Devices Based on Nitride Nanowires Embedded in Polymer Films
  Maria Tchernycheva(CNRS, France)
• J-2-01
  Two-Dimensional Materials: from Contact to Device Applications
  Chao-Hui Yeh(National Tsing Hua Univ., Taiwan)

Area 14 Power Devices and Materials

• O-3-01
  Characterization of Ga₂O₃ MOSFETs for Low to Medium Power Applications
  Gregg H. Jessen(Air Force Research Lab., USA)
• N-6-01
  Demonstration of Reduction in Vce(sat) of IGBT based on a 3D Scaling Principle
  Kuniyuki Kakushima(Tokyo Tech, Japan)
• O-3-02
  Normally Off Diamond Metal-Oxide-Semiconductor Field-Effect-Transistor with Inversion Mode
  Tsubasa Matsumoto(Kanazawa Univ., Japan)
• O-1-01
  Accurate Evaluation of Fast Threshold Voltage Shift for SiC MOS Devices Under Various Gate Bias Stress Conditions
  Mitsuru Sometani(AIST, Japan)

Area 15 Photovoltaic Materials and Devices

• C-1-01
  Crystal Growth of CZ-Si and Relationship between Carrier Lifetime and Defects
  Koichi Kakimoto(Kyushu Univ., Japan)
• B-5-01
  Solution-processed solar cells with nanostructured hybrid materials
  Takaya Kubo(Univ. of Tokyo, Japan)
• C-3-01
  Next-generation High Efficiency and Low Cost GaAs/Si Multijunction Solar Cells with Smart Stack Technology
  Kikuo Makita(AIST, Japan)
• C-2-01
  Improvement in Performance of CIGS Solar Cells by Surface Modification
  Akira Yamada(Tokyo Tech, Japan)