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History of SSDM Award

Year of the award	Awarded thesis
Year of the award	Conference number held	Year of presentaion	Thesis number	Name of awardees	Title of thesis
28th (2017)	25th	1993	D-9-4	Takatomo Enoki, Yohtaro Umeda and Yasunobu Ishii NTT LSI Laboratories	0.05-µm-Gate InAlAs/InGaAs HEMT and Reduction of Its Short-Channel Effects
27th (2016)	11th	1979	B-3-4	S. Arai, Y. Itaya, Y. Suematsu and K. Kishino Tokyo Institute of Technology	1.5-1.6 µm Wavelength (100) GaInAsP/InP DH Lasers
26th (2015)	19th	1987	C-3-6	H. Shinriki, Y. Nishioka and K. Mukai Central Research Laboratory Hitachi Ltd.	Highly Reliable Ta₂O₅/SiO₂ Double Dielectric Films on Poly Crystalline Silicon
25th (2014)	24th	1992	S-IV-3	A.Toriumi, T. Mizuno, M. Iwase, M. Takahashi, H. Niiyama, M. Fukumoto, S. Inaba, I. Mori, and M. Yoshimi ULSI Research Center, Toshiba Corporation	High Speed 0.1µm CMOS Devices Operating at Room Temperature
24th (2013)	9th	1977	C-1-1	H. Suzuki, K. Suyama, K. Odani, and M. Fukuta Fujitsu Laboratories Ltd.	C-band 10W Power GaAs MESFET with an Internal Matching Circuit
	9th	1977	C-1-2	Y. Aono, A. Higashisaka, T. Ogawa and F. Hasegawa Central Research Laboratories, Nippon Electric Co. Ltd.	X- and Ku-band Performance of Submicron Gate GaAs Power FETs
23rd (2012)	13th	1981	A-3-8	I. Kato, T. Ito, S. Inoue, T. Nakamura, and H. Ishikawa Fujitsu Laboratories Ltd.	Ammonia annealed SiO₂ films for thin gate insulator
22nd (2011)	17th	1985	C-3-9 LN	T. Sekigawa, Y. Hayashi, K. Ishii, and S. Fujita** Nanoelectronics Research Institute of AIST, Nanosystem Research Institute of AIST, (Ex) Nanoelectronics Research Institute of AIST, **Corporate Technology Planning Center, Ricoh Company, Ltd.	XMOS Transistor for a 3D-IC
21st (2010)	18th	1986	A-7-4	K. Yamada Univ. of Tsukuba	Thermodynamical Approach to a New High Dielectric Capacitor Structure: W/HfO₂/W
20th (2009)	25th	1993	PB-3-9	K. Natori Univ. of Tsukuba	Ⅰ-Ⅴ Characteristics of SOI MOSFETs in Ballistic Mode
19th (2008)	2nd	1970	1-1	S. Furukawa and H. Ishiwara Tokyo Tech.	Vacancy Distribution Theory for Ion-Implanted Target
18th (2007)	3rd	1971	5-2	H. Sakaki and T. Sugano Univ. of Tokyo	Anistropic Channel Conductivity of a MOS Transistor on the (110) Surface of Silicon
17th (2006)	14th	1982	B-2-3	H. Soda, Y. Motegi, and K. Iga Tokyo Tech.	Threshold Condition and Design of Surface Emitting GaInAsP/InP Injection Lasers
16th (2005)	19th	1987	C-4-2	H. Matsunami, N. Kuroda, W. S. Yoo, S. Nishino, and K. Shibahara Kyoto Univ., Japan	Step-Controlled VPE Growth of SiC Single Crystals at Low Temperatures
15th (2004)	22th	1990	S-CII-4	Y. Hayashide, H. Miyatake, J. Mitsuhashi, M. Hirayama, T. Higaki, and H. Abe Mitsubishi Electric, Japan	Fabrication of Storage Capacitance-Enhanced Capacitors with a Rough Electrode
	22th	1990	S-CII-5	H. Watanabe, N. Aoto, S. Adachi, T. Ishijima, E. Ikawa, and K. Terada NEC, Japan	A New Stacked Capacitor Structure using Hemispherical-Grain(HSG) Poly-Silicon Electrodes
14th (2003)	24th	1992	S-1-1	I. Akasaki and H. Amano Meijo Univ., Japan	Room Temperature Ultraviolet/Blue Light Emitting Devices Based on AlGaN/GaN Multi-Layered Structure
13th (2002)	3th	1971	5-5	H. Hara, T. Sato, Y. Takeishi, K. Ohuchi, H. Tango, Y. Ohmori, H. Iizuka, Y. Yasuda, and F. Masuoka Toshiba Research and Development Center, Japan	Avalanche-Injection MOS Read-Only Memory
12th (2001)	6th	1974	B-3-3	M. Esashi and T. Matsuo Tohoku Univ., Japan	Biomedical Cation Sensor Using Field Effect of Semiconductor
11th (2000)	4th	1972	6-1	T. Warabisako, I. Yoshida, and T. Tokuyama Hitachi, Japan	Properties of MOS Structures Prepared on Substrates Having Ion-Implanted Impurity Distribution Profile
9th (1998)	12th	1980	C-3-9 (LN)	T. Mimura, S. Hiyamizu, H. Hashimoto, and H. Ishikawa Fujitsu Labs., Japan	An Enhancement-Mode High Electron Mobility Transistor for VLSI
10th (1999)	6th	1974	B-2-1	H. Abe Mitsubishi, Japan	The Application of Gas Plasma to the Fabrication of MOS LSI (Invited)
	18th	1986	B-8-4	Y. Matsushita, M. Wakatsuki, and Y. Saito Toshiba, Japan	Improvement of Silicon Surface Quality by H₂ Anneal
8th (1997)	12th	1980	A-4-7	T. Sakai, Y. Kobayashi, H. Yamauchi, M. Sato, and T. Makino NTT, Japan	High Speed Bipolar ICs Using Super Self-Aligned Process Technology
7th (1996)	11th	1979	A-3-7	K. Izumi, M. Dohken, and H. Ariyoshi NTT, Japan	High Speed C-MOS IC Using Buried SiO₂ Layers Formed by Ion Implantation
6th (1995)	5th	1973	3-4	H. Yonezu, I. Sakuma, T. Kamejima, M. Ueno, K. Kobayashi, K. Nishida, Y. Nannichi, and I. Hayashi Nippon Electric, Japan	Degradation of Al_xGa_1-xAs Double Heterostructure Lasers
5th (1994)	10th	1978	A-1-4	M. Koyanagi and N. Hashimoto Hitachi, Japan	Novel High Density, Stacked Capacitor MOS RAM
4th (1993)	7th	1975	A-1-1	Y. Horiike and M. Shibagaki Toshiba, Japan	A New Chemical Dry Etching
3rd (1992)	11th	1979	C-3-4	M. Tajima, A. Yusa, and T. Abe* ETL, Komatsu Electronic Metals and *Shin-Etsu Handotai, Japan	Characterization of Residual Impurities in Highly Pure Si Crystals by Photoluminescence Technique
2nd (1991)	6th	1974	A-1-1	T. Tsukada Hitachi, Japan	Buried-Heterostructure Injection Lasers
1st (1990)	1st	1969	4-1	Y. Tarui, Y. Hayashi, and T. Sekigawa ETL, Japan	Diffusion Self-Aligned MOST: A New Approach for High Speed Device

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