Invited Speakers

Area 1 Advanced LSI Processing & Materials Science

• Si-passivated Ge nFET towards a reliable Ge CMOS
  Hiroaki Arimura
  (IMEC, Belgium)
  O-1-01
• Strained SiGe FinFETs for High Performance CMOS
  Pouya Hashemi
  (IBM, USA)
  O-3-01
• Ultra-thin Dielectric Insertions for Contact Resistivity Lowering in Advanced CMOS: Promise and Challenges
  Louis Hutin
  (CEA-Leti, France)
  O-6-01
• Experimental Demonstration of Negative Capacitance epi-Ge/Si FETs with Ferroelectric Hf-based Oxide Gate Stack for Swing Sub-60mV/dec and Hysteresis-Free
  Min-Hung Lee
  (National Taiwan Normal Univ., Taiwan)
  A-2-01

Area 2 Interconnect Technologies and 3D Integration / Sensor / MEMS Integration / Materials and Characterization

• CMP-Stack Trek
  Viorel Balan
  (CEA-Leti, France)
  K-2-01
• Materials Design of Electrically Conductive Pastes for Stretchable Device Packaging
  Masahiro Inoue
  (Gunma Univ., Japan)
  K-4-01
• Electrostatic Perturbations from TSV Processing during 3D Integration of Advanced CMOS Technologies
  Chandrasekharan Kothandaraman
  (IBM, USA)
  K-1-01
• Room temperature Bonding using Thin Metal Films: Technical Potential and Current Status
  Takehito Shimatsu
  (Tohoku Univ., Japan)
  M-5-01

Area 3 CMOS Devices / Device Physics

• Stackable MoS₂ FinFETs Using Solid CVD Developed Through Fully CMOS-Compatible Process Technology
  Min-Cheng Chen
  (National Nano Device Labs., Taiwan)
  A-1-02
• Monolithic 3D (M3D) Complementary Metal-Oxide-Semiconductor (CMOS)-Nano-Electromechanical (NEM) Hybrid Circuits for Low-Power and High-Speed Reconfigurable Logic (RL) Applications
  Woo Young Choi
  (Sogang Univ., Korea)
  A-1-01
• InGaAs-on-Si(Ge) 3D Monolithic Integration for CMOS and More-than-Moore Technologies
  Veeresh Deshpande
  (IBM, Switzerland)
  A-4-01
• Enabling Hetero-integration of III-V and Ge-based Transistors on Silicon with Ultra-thin Buffers formed by Interfacial Misfit Technique
  Xiao Gong
  (NUS, Singapore)
  A-5-01
• Bias Temperature Instability in Tunnel FETs
  Wataru Mizubayashi
  (AIST, Japan)
  A-6-01
• Carrier Transport Analysis of High-performance Poly-Si Nanowire Transistors
  Minoru Oda
  (Toshiba Corp., Japan)
  A-3-02

Area 4 Advanced Memory Technology

• Near-future Memory Hierarchy with Emerging Nonvolatile Memories and a Case Study of e-STT-MRAM Applications
  Shinobu Fujita
  (Toshiba Corp., Japan)
  B-5-02
• Perpendicular STT-MRAM Macro Embedded into 40nm CMOS Logic Platform
  Yu Lu
  (Hikstor Technology, Ltd., China)
  B-2-01
• Technology Challenges for Future DRAM and NAND and Technology Break through with Emerging Memories, MRAM and PRAM
  Jong Chul Park
  (Samsung Electronics Co., Ltd., Korea)
  B-5-01
• Operation Mechanism and Novel Functions of Oxide-Based Atomic
  Switches
  Tohru Tsuruoka
  (NIMS, Japan)
  B-1-01
• Memory Devices for Brain-Inspired Computing
  H.-S. Philip Wong
  (Stanford Univ., USA)
  B-7-01

Area 5 Advanced Circuits and Systems

• Integration of High Speed and Low Power CMOS Front-end Circuits with Silicon Photonic Devices
  Shawn S. H. Hsu
  (National Tsing Hua Univ., Taiwan)
  J-1-01
• Highly Time-Resolved CMOS Image Sensors Using High-Speed Charge Modulation Techniques
  Shoji Kawahito
  (Shizuoka Univ., Japan)
  J-1-02
• Roles and Expectations for LSI and MEMS Technologies in the IoT Era
  Hiroki Morimura
  (NTT Corp., Japan)
  K-3-01
• A Wearable Biomedical Sensing System with Normally-off Computing Architecture and Physical Activity Classification Algorithm
  Masahiko Yoshimoto
  (Kobe Univ., Japan)
  J-6-01

Area 6 Compound Semiconductor Electron Devices & Related Technologies

• GaN-based Polarized Semiconductor Devices for Future Power Switching Systems
  Hidetoshi Ishida
  (Panasonic Corp., Japan)
  N-2-01
• Compositionally Graded-Base InP/InGaAsSb Double Heterojunction Bipolar Transistors with 500-GHz f_T and BV_CEO > 5V
  Norihide Kashio
  (NTT Corp., Japan)
  N-1-01
• Reliability challenges for GaN-based FETs
  Martin Kuball
  (Univ. of Bristol, UK)
  N-4-01
• Single Crystal β-Ga₂O₃ Substrates
  Akito Kuramata
  (Tamura Corp., Japan)
  N-5-03
• III-Nitride-based Negative Differential Resistance and Resonant Tunneling Devices With up to THz Operation Capability
  Dimitris Pavlidis
  (Boston Univ., USA)
  N-3-01

Area 7 Photonic Devices and Related Technologies

• Barium Titanate Thin Films Embedded in Silicon Photonic Structures for Ultra-Efficient Electro-Optical Tuning
  Stefan Abel
  (IBM, Switzerland)
  C-5-01
• On-chip Silicon Photonics Technologies for WDM-based Optical Interconnects
  Seok-Hwan Jeong
  (PETRA, Japan)
  C-2-05
• Recent Progress in Quantum Dot Laser
  Takeo Kageyama
  (Univ. of Tokyo, Japan)
  C-4-01
• Retinal Imaging Laser Eyewear with Focus-Free and Augmented Reality
  Mitsuru Sugawara
  (QDLaser, Inc., Japan)
  C-2-01
• CMOS Photonics Based on SiGe and Ge for near and Mid-infrared Photonic Integrated Circuits
  Mitsuru Takenaka
  (Univ. of Tokyo, Japan)
  C-3-01
• Refractive Index Engineering of High Performance Coupler for Compact Photonic Integrated Circuits
  Zhiping J. Zhou
  (Peking Univ., China)
  C-1-01

Area 8 Advanced Material Synthesis and Crystal Growth Technology

• Kinetics of Forming Silicides in Nanowires and Nano-Heterostructures
  Yi-Chia Chou
  (NCTU, Taiwan)
  D-6-01
• Interface Engineering for High-Performance MoS₂ Field Effect
  Transistors
  Lei Liao
  (Wuhan Univ., China)
  D-2-01
  
  → Withdrawn
• Formation and Characterization of Si Quantum Dots with Ge Core for Functional Devices
  Seiichi Miyazaki
  (Nagoya Univ., Japan)
  D-5-01
• RF-MBE Growth of GaInN Ternary Alloys Using in-situ Monitoring Techniques
  Tomohiro Yamaguchi
  (Kogakuin Univ., Japan)
  D-4-01

Area 9 Physics and Applications of Novel Functional Devices and Materials

• Quantum Transport in van der Waals Junctions of Graphene and 2D Materials
  Tomoki Machida
  (Univ. of Tokyo, Japan)
  D-1-01
• Analog VLSI Circuits and Devices for Neuro-Inspired Time-Domain Computing
  Takashi Morie
  (Kyushu Inst. of Tech., Japan)
  B-7-03
• Device and Circuit considerations towards Spin-Based Logic
  Iuliana Radu
  (IMEC, Belgium)
  M-2-04
• Valley Hall Effect in Bilayer Graphene with Electrically Broken Inversion Symmetry
  Yuya Shimazaki
  (Univ. of Tokyo, Japan)
  D-1-04
• Emerging Memory Technologies for Neuromorphic Computing
  Dmitri Strukov
  (Univ. of California, Santa Barbara, USA)
  B-7-02
• Topological Phenomena in Ultracold Atoms
  Masahito Ueda
  (Univ. of Tokyo, Japan)
  M-2-01

Area 10 Organic Materials Science, Device Physics, Applications and Printed Technologies

• Organic and Hybrid Materials for Thermoelectric Applications
  Alexandre Carella
  (CEA-Liten, France)
  F-4-01
• Doped Polymer Organic Semiconductor Films with Ultra Workfunctions
  Lay-Lay Chua
  (NUS, Singapore)
  F-5-01
• SmE Liquid Crystals for High Performance Solution-processed Polycrystalline Organic Field Effect Transistors
  Jun-ichi Hanna
  (Tokyo Tech, Japan)
  F-1-01
• Design of Materials for Organic Light-Emitting Diodes
  Hironori Kaji
  (Kyoto Univ., Japan)
  F-6-01
• Bio-metamaterial: Black Ultrathin Gold Film Fabricated on Leaves of
  Plants
  Kotaro Kajikawa
  (Tokyo Tech, Japan)
  F-3-01

Area 11 Sensors and Materials for Biology, Chemistry and Medicine

• Hydrogel-Based Cytocompatible Electrode Systems
  Matsuhiko Nishizawa
  (Tohoku Univ., Japan)
  H-1-01
• Stretchable Sensors for Bio-medical Applications
  Tsuyoshi Sekitani
  (Osaka Univ., Japan)
  H-3-01
• Beyond the Debye Length: Direct Protein Detection in Human Serum with FETs and a Portable Biomedical System
  Yu-Lin Wang
  (National Tsing Hua Univ., Taiwan)
  H-5-01
• Solid-State Nanopore System for Label-free DNA Sequencing
  Yoshimitsu Yanagawa
  (Hitachi, Ltd., Japan)
  H-2-01

Area 12 Spintronics Materials and Devices

• Preparation of Ce:YIG Thin Films on Si and Application to Integrated Optical Isolator on Si Substrate
  Taichi Goto
  (Toyohashi Univ. of Tech., Japan)
  C-5-02
• Quantum-Well Based Tunneling Magnetoresistance Effect in Double-Barrier Magnetic Tunnel Junctions
  Xiufeng Han
  (Chinese Academy of Sci., China)
  G-3-01
• Extreme Exchange Bias Effect of Nanostructured Magnetic Phase Mixture Films with Increased Internal Interface
  Jung-Il Hong
  (Daegu Gyeongbuk Inst. of Sci. & Tech., Korea)
  G-4-01
• Antiferromagnetic Domain Wall Motion Driven by Spin-orbit Torques
  Kyung-Jin Lee
  (Korea Univ., Korea)
  G-1-01
• Spin Transfer Torque in Antiferromagnet and toward the Applications
  Takahiro Moriyama
  (Kyoto Univ., Japan)
  G-1-02
• Perpendicularly Magnetized Mn-based Binary Alloy Single-crystalline Films: A Kind of Promising Material for Novel Spintronic Devices
  Jianhua Zhao
  (Chinese Academy of Sci., China)
  C-6-01

Area 13 Applications of Nanotubes, Nanowires, and Graphene and Related 2D Materials

• Nanowire Based Photovoltaics
  Enrique Barrigón
  (Lund Univ., Sweden)
  K-5-03
• Carbon Nanotube Transistor Technology for Scaling Beyond Si CMOS
  Qing Cao
  (IBM , USA)
  J-3-01
• Hurdles and Progress towards Device Applications of Graphene and Layered Materials
  Debdeep Jena
  (Cornell Univ., USA)
  J-2-01
• III-V Nanowires and Nano fins: Growth, Etching, and Devices
  Xiuling Li
  (Univ. of Illinois, USA)
  K-5-01
• Metal Oxide Nanowires for Early Disease Diagnosis
  Takao Yasui
  (Nagoya Univ., Japan)
  K-6-01

Area 14 Power Devices and Materials

• Advanced 1.2 kV Class SiC MOSFETs Fabricated on 150 mm wafers in a High-volume CMOS Fab
  Sujit Banerjee
  (Monolith Semiconductor Inc., USA)
  E-4-01
• SiC Power Devices: Technologies, Products and Applications
  Simone Rascuna
  (STMicroelectronics, Italy)
  N-2-02
• The Ideal Chip is not Enough - Issues Retarding the Success of Wide Band-Gap Devices
  Nando Kaminski
  (Univ. of Bremen, Germany)
  N-6-01
• Planer Diamond P-channel MOSFETs with Breakdown Voltage V_B > 1.8kV and High Drain Current Density by 2DHG
  Hiroshi Kawarada
  (Waseda Univ., Japan)
  N-5-01
• Opportunities to Design Thermal Oxidation and Post-Oxidation Processes to Control 4H-SiC MOS Interface Characteristics
  Koji Kita
  (Univ. of Tokyo, Japan)
  E-3-01
• Current and Future Technologies of SiC Power Devices
  Hirokazu Asahara
  (ROHM Co., Ltd., Japan)
  E-1-01

Area 15 Photovoltaic Materials and Devices

• Efficient and Stable Large-area Perovskite Solar Cells
  Liyuan Han
  (NIMS, Japan)
  F-2-01
• CoSe₂/Carbon Thin Films as the Counter Electrode for Dye-Sensitized Solar Cells
  Kuo-Chuan Ho
  (National Taiwan Univ., Taiwan)
  F-2-02
• Characterization of Transparent Conductive Oxide films and its Influence on Amorphous/Crystalline Silicon Heterojunction Solar Cells
  Fanying Meng
  (SIMIT, China)
  J-4-01
• Cu(In,Ga)(Se,S)₂ Solar Cell Research in Solar Frontier K.K. with 22.3% World-Record Efficiency
  Kong Fai Tai
  (Solar Frontier K.K., Japan)
  G-5-01