Committees

Organizing Committee

Chair

T. Fukui (Hokkaido Univ.)

Vice-Chair

T. Kanayama (AIST)

Members

• Y. Arakawa (Univ. of Tokyo)
• T. Asano (Kyushu Univ.)
• S. Fujita (Kyoto Univ.)
• M. Fukuma (SIRIJ)
• T. Hiramoto (Univ. of Tokyo)
• D. Hisamoto (Hitachi, Ltd.)
• H. Ishiwara (Tokyo Tech)
• H. Ito (Tokyo Electron LTD.)
• M. Konagai (Tokyo Tech)
• M. Koyanagi (Tohoku Univ.)
• K. Masu (Tokyo Tech)
• K. Matsumoto (Osaka Univ.)
• S. Miyazaki (Nagoya Univ.)
• N. Nagashima (Sony Corp.)
• T. Nakamura (Rohm Co., Ltd.)
• K. Natori (Tokyo Tech)
• H. Oohashi (NTT Electronics Corp.)
• T. Oomori (Mitsubishi Electric Corp.)
• N. Saito (NHK)
• T. Shibata (JSAP)
• H. Shibata (Toshiba Corp.)
• T. Sogawa (NTT Basic Res. Labs.)
• T. Someya (Univ. of Tokyo)
• S. Tahara (NEC Corp.)
• A. Takahashi (Sharp Corp.)
• H. Umimoto (Panasonic Corp.)
• E. Yano (Fujitsu Labs. Ltd.)
• N. Yokoyama (AIST)
• S. Chung (National Chiao Tung Univ.)
• Y. H. Jeong (POSTECH)
• E. K. Kim (Hanyang Univ.)

International Advisory Committee

Members（*Tentative）

• C. Y. Chang (NCTU)
• G. Declerck (IMEC)
• L. Esaki (Yokohama College of Pharmacy)
• J. S. Harris (Stanford Univ.)
• K. v. Klitzing (Max Planck Inst.)
• D. L. Kwong (IME)
• M. Nakamura (JST)
• Y. Nishi (Stanford Univ.)
• K. H. Ploog (Paul Drude Inst.)
• T. Sugano (Univ. of Tokyo)
• K. Takahashi (Tokyo Tech)

Steering Committee

Chair

S. Hara (Hokkaido Univ.)

Vice-Chair

M. Masahara (AIST)

Secretary

S. Kasai (Hokkaido Univ.)

Members

• M. Akazawa (Hokkaido Univ.)
• K. Endo (AIST)
• N. Fukata (NIMS)
• M. Ikebe (Hokkaido Univ.)
• Y. Ishikawa (Univ. of Tokyo)
• S. Migita (AIST)
• T. Nagahama (Hokkaido Univ.)
• H. Ota (AIST)
• T. Sato (Hokkaido Univ.)
• K. Takahashi(JEOL Ltd.)
• T. Uemura (Hokkaido Univ.)
• H. Y. Cha (Hongik Univ.)
• Y. H. Cho (KAIST)
• N. J. Wu (Chinese Academy of Sci.)
• Y. C. Yeo (TSMC)
• H. W. Zan (NCTU)

Program Committee

Chair

S. Fujita (Kyoto Univ.)

Vice-Chair

• T. Hiramoto (Univ. of Tokyo)
• T. Kita (Kobe Univ.)
• S. Sato (Fujitsu Labs. Ltd)
• E. Y. Chang (National Chiao Tung Univ.)

Secretary

• T. Kawaharamura (Kochi Univ. of Tech)
• T. Sekitani (Osaka Univ.)
• K. Miyaji (Shinshu Univ.)

JJAP Special Issues Editors

• K. Kita (Univ. of Tokyo)
• S. Iwamoto (Univ. of Tokyo)
• S. Higashi (Hiroshima Univ.)

Area 1 Advanced LSI Processing & Materials Science

Chair

S. Migita (AIST)

Vice-Chair

• O. Nakatsuka (Nagoya Univ.)
• L. Grenouillet (CEA-LETI)

Members

• T. Aoyama (Toshiba Corp.)
• K. Kakushima (Tokyo Tech)
• H. Morioka (SOCIONEXT)
• G. Nakamura (Tokyo Electron Ltd.)
• T. Nakayama (Chiba Univ.)
• H. Nohira (Tokyo City Univ.)
• T. Yamaguchi (Renesas Electronics Corp.)
• S. Yoshida (Sony Corp.)

Area 2 Interconnect Technologies and 3D Integration / Sensor / MEMS Integration / Materials and Characterization

Chair

H. Ishii (Toyohashi Univ. of Tech.)

Vice-Chair

• N. Sugiyama (Toray Research Center, Inc.)
• K.N. Chen (National Chiao Tung Univ.)

Members

• M. Fujino (Univ. of Tokyo)
• T. Fukushima (Tohoku Univ.)
• J. Gambino (ON Semiconductor)
• S. Itabashi (NTT Advanced Technology Corp.)
• H. Kanaya (Kyushu Univ.)
• M. Kodera (Toshiba Corp.)
• T. Minari (NIMS)
• S. Ogawa (AIST)
• S. G. Pyo (Chung-Ang Univ.)
• M. Sato (Fujitsu Labs. Ltd.)
• M. Takeyama (Kitami Inst. of Tech.)
• C. S. Tan (Nanyang Technological Univ.)
• M. Ueki (Renesas Electronics Corp.)
• M. van der Veen (UPM IMEC)
• W. Zhang (NCAP China)

Area 3 CMOS Devices / Device Physics

Chair

M. Masahara (AIST)

Vice-Chair

• N. Sugii (Hitachi, Ltd.)
• F.L. Yang (Academia Sinica)

Members

• T.-S. Chao (National Chiao Tung Univ.)
• Y. Fukuzaki (Sony Corp.)
• M. Hane (Renesas Electronics Corp.)
• M. Kobayashi (Univ. of Tokyo)
• K. Kokubun (Toshiba Corp.)
• K. Maekawa (Renesas Electronics Corp.)
• N. Mori (Osaka Univ.)
• N. Planes (STMicroelectronics)
• K. Sukegawa (SOCIONEXT)
• G. Tsutsui (IBM)
• O. Weber (CEA-LETI)

Area 4 Advanced Memory Technology

Chair

K. Hamada (Micron Memory Japan Inc.)

Vice-Chair

• Y. Sasago (Hitachi, Ltd.)
• M.J. Tsai (Industrial Tech. Res. Inst.)

Members

• H. Hwang (POSTECH)
• K. Ito (Tohoku Univ.)
• K. Kinoshita (Tottori Univ.)
• G.-H. Koh (Samsung Electronics Co.Ltd.)
• M.-H. Lee (Macronix International Co., Ltd.)
• H. Saito (Fujitsu Semiconductor Ltd.)
• T. Sakamoto (NEC Corp.)
• W.-T. Sun (eMemory Technology Inc.)
• K. Yamamoto (Toshiba Corp.)

Area 5 Advanced Circuits and Systems

Chair

Y. Mita (Univ. of Tokyo)

Vice-Chair

• H. Takao (Kagawa Univ.)
• H. Lin (National Chung-Hsing Univ.)

Members

• I. Akita (Toyohashi Tech)
• J. -C. Guo (National Chiao Tung Univ.)
• D. Kanemoto (Univ. of Yamanashi)
• R. Kuroda (Tohoku Univ.)
• T. Matsuda (Toyama Prefectural Univ.)
• T. Minotani (NTT TELECON CO.,LTD.)
• K. Takeuchi (Chuo Univ.)

Area 6 Compound Semiconductor Electron Devices & Related Technologies

Chair

N. Hara (Fujitsu Labs. Ltd.)

Vice-Chair

• T. Suzuki (Japan Advanced Inst. of Sci. & Tech.)
• E.Y. Chang (National Chiao Tung Univ.)

Members

• T. Hashizume (Hokkaido Univ.)
• R. Hattori (Mitsubishi Electric Corp.)
• M. Kuraguchi (Toshiba Corp.)
• M. Kuzuhara (Univ. of Fukui)
• E. Lind (Lund Univ.)
• K. Maezawa (Univ. of Toyama)
• S. Sasa (Osaka Inst. of Tech.)
• J. Suda (Kyoto Univ.)
• S. Suzuki (Tokyo Tech)
• T. Tanaka (Panasonic Corp.)

Area 7 Photonic Devices and Related Technologies

Chair

Y. Ishikawa (Univ. of Tokyo)

Vice-Chair

• H. Oohashi (NTT Electronics Corp.)
• F. Boeuf (STMicroelectronics)

Members

• M. Fujita (Osaka Univ.)
• H. Fukuda (NTT Device Innovation Center)
• N. Iizuka (Toshiba Corp.)
• T. Isu (Tokushima Univ.)
• K. Kojima (Tohoku Univ.)
• T. Mukaihara (Furukawa Electric Co., Ltd.)
• S. Nishikawa (Mitsubishi Electric Corp.)
• T. Pinguet (Luxtera)
• S. Saito (Univ. of Southampton)
• T. Shimizu (PETRA)
• L. Vivien (Univ. of Paris Sud)

Area 8 Advanced Material Synthesis and Crystal Growth Technology

Chair

T. Suemasu (Univ. of Tsukuba)

Vice-Chair

• T. Nagata (NIMS)
• W.W. Wu (National Chiao Tung Univ.)

Members

• N. Fujimura (Osaka Pref. Univ.)
• Y. Hotta (Univ. of Hyogo)
• T. Iwai (Fujitsu Labs. Ltd.)
• A. Kikuchi (Sophia Univ.)
• H. Tatsuoka (Shizuoka Univ.)
• E. S. Tok (National Univ. of Singapore)
• N. Watanabe (NTT Device Tech. Labs)

Area 9 Physics and Applications of Novel Functional Devices and Materials

Chair

T. Machida (Univ. of Tokyo)

Vice-Chair

• T. Tanamoto (Toshiba Corp.)
• P.W. Li (National Centeral Univ.)

Members

• G. Austing (National Research Council Canada)
• Y. Ishikawa (NAIST)
• A. Kimura (Hiroshima Univ.)
• G. Liang (National Univ. of Singapore)
• K. Matsuda (Kyoto Univ.)
• T. Nakaoka (Sophia Univ.)
• A. Oiwa (Osaka Univ.)
• T. Ota (NTT Basic Res. Labs.)
• K. Terabe (NIMS)

Area 10 Organic Materials Science, Device Physics, and Applications

Chair

K. Fujita (Kyushu Univ.)

Vice-Chair

• T .Shimada (Hokkaido Univ.)

Members

• H. Endoh (NEC Corp.)
• T. Hayashi (NTT Basic Res. Labs.)
• M. Kitamura (Kobe Univ.)
• H. Murata (JAIST)
• H. Okada (Univ. of Toyama)
• K. Tajima (RIKEN)
• J. Takeya (Univ. of Tokyo)
• S. Tokito (Yamagata Univ.)
• M. Yoshida (AIST)

Area 11 Sensors and Materials for Biology, Chemistry and Medicine

Chair

J. Ohta (Nara Inst. of Sci. & Tech.)

Vice-Chair

• T. Sakata (Univ. of Tokyo)
• C.S. Lai (Chang Gung Univ.)

Members

• H.-M. Chen (National Chiao Tung Univ.)
• C.-H. Liu (National Tsing Hua Univ.)
• S. Machida (Hitachi, Ltd.)
• M. Sasaki (Toyota Technological Inst.)
• H. Tanaka (Panasonic Corp.)
• T. Tanaka (Tohoku Univ.)
• R. Tero (Toyohashi Tech)

Area 12 Spintronics Materials and Devices

Chair

Y. Suzuki (Osaka Univ.)

Vice-Chair

• J. Nitta (Tohoku Univ.)
• C.Y. You (Inha Univ.)

Members

• T. Fukumura (Tohoku Univ.)
• S. Mizukami (Tohoku Univ.)
• T. Nagahama (Hokkaido Univ.)
• Y. Ohno (Univ. of Tsukuba)
• S. Ohya (Univ. of Tokyo)
• Y. Saito (Toshiba Corp.)
• H. Shimizu (Tokyo Univ. of Agri. & Tech.)
• C. Song (Tsinghua Univ.)
• A. Tulapurkar (IIT Mumbai)

Area 13 Applications of Nanotubes, Nanowires, and Graphene

Chair

Y. Ohno (Nagoya Univ.)

Vice-Chair

• K. Kawaguchi (Univ. of Tokyo)
• G. Eda (National Univ. of Singapore)

Members

• S. Akita (Osaka Pref. Univ.)
• M. Arita (Univ. of Tokyo)
• N. Fukata (NIMS)
• S. Hara (Hokkaido Univ.)
• T. Kawai (NEC Corp.)
• S. Lehmann (Lund Univ.)
• K. Maehashi (Tokyo Univ. of Agri. & Tech.)
• H. Miyazaki (Toshiba Corp.)
• K. Nagashio (Univ. of Tokyo)
• T. Takenobu (Waseda Univ.)
• G. Zhang (NTT Corp.)

Area 14 Power Devices and Materials

Chair

H. Umezawa (AIST)

Vice-Chair

• D. Hisamoto (Hitachi, Ltd.)
• C.F. Huang (National Tsing Hua Univ.)

Members

• G. Feng (Epi World International Co., LTD)
• S. Harada (Nagoya Univ.)
• N. Iwamuro (Univ. of Tsukuba)
• Y. Kawaguchi (Toshiba Corp.)
• H. Kim (Hongik Univ.)
• R. Kosugi (AIST)
• T. Makino (AIST)
• S. Matsumoto (Kyushu Inst. of Tech.)
• K. Nishiwaki (Toyota Motor Corp.)
• T. Uesugi (Toyota Central R&D Labs. Inc.)

Area 15 Photovoltaic Materials and Devices

Chair

M. Isomura (Tokai Univ.)

Vice-Chair

• K. Ohdaira (Japan Advanced Inst. of Sci. & Tech.)

Members

• L.-S. Hong (National Taiwan University of Sci. & Tech., Presently at Taipei Economic and Cultural Representative Office in Japan)
• T. Hoshii (Univ. of Tokyo)
• M. Ikegami (Toin Univ. of Yokohama)
• Y. Kurokawa (Nagoya Univ.)
• T. Negami (Panasonic Corp.)
• T. Okamoto (Kisarazu National College of Tech.)
• H. Suzuki (Univ. of Miyazaki)
• T. Taima (Kanazawa Univ.)