Short Course

Short Courses for young researchers and students, will be held on September 8, 2014, the first day of SSDM2014.

A separate fee is required to attend the Short Course.

For Short Course registrations “Click here”

A Trends for Future Power Devices

Organizer: S. Fujita Kyoto Univ.

Evolution of power devices is undoubtfully inevitable for supporting future sustainable society, but we have not clearly drawn a roadmap which devices (materials and structures) should take which application fields; this may be due to the continuing competition between Si-based and wide band gap semiconductor-based devices both in their performance and cost. In this course we intend the participants to learn the issues on which especially the wide band gap semiconductors are, or might be facing for their future wide applications, based on their most up-to-date achievements and science lying, so that they can imagine their own roadmap for the future of power devices.

PDF Short Course A Guide
September 8, 2014
  • 13:00 - 14:20
    “Basic Requirements and Physics of Power Devices”
    J. Suda
    (Kyoto Univ., Japan)
  • --- Break ---
  • 14:30 - 15:30
    “Trends in the Development of SiC Power Devices by Manufactures”
    H. Yamamoto
    (Chiba Inst. of Tech., Japan)
  • --- Break ---
  • 15:40 - 16:40
    “High-speed switching operation of wide band-gap semiconductor and its circuit application”
    N. Satoh
    (Chiba Inst. of Tech., Japan)
  • 16:40 - 17:20
    “Gallium oxide-based electronics: Present status and future prospects”
    M. Higashiwaki
    (NICT, Japan)

B Functional Devices in Integrated Systems

Organizer: H. Wakabayashi Tokyo Tech

Evolution of functional device has been strongly expected to achieve in integrated systems, such as a smart phone, wearable electronics and beyond. In this short course, the SSDM has invited five excellent lecturers not only more Moore but also more than Moore areas to discuss in the same room.

PDF Short Course B Guide
September 8, 2014
  • 13:00 - 13:05 Introduction on topics
  • 13:05 - 13:55
    “Multigate Transistors: Pushing Moore's law to the limit”
    J.P. Colinge
    (TSMC, Taiwan)
  • 13:55 - 14:45
    “Volatile and Non-volatile Semiconductor Memories: Past, Present and Future Outlook”
    T. Watanabe
    (Toshiba Corp., Japan)
  • --- Break ---
  • 15:00 - 15:50
    “Co-designs of Devices and Circuits to improve performances of RF/Analog and High voltage I/Os in SoC/MCUs”
    Y. Hayashi
    (Renesas Electronics Corp., Japan)
  • 15:50 - 16:40
    “Recent Challenges and Solutions in Image Sensor Technology”
    H. Nomura
    (Sony Corp., Japan)
  • 16:40 - 17:30
    “Integrated MEMS Technology for Construction of Diverse Functional Devices”
    H. Takao
    (Kagawa Univ., Japan)
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