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Direct Growth of Uniform In-rich InGaN on Si: A New Basic Technology
P. Aseev
(ISOM, Spain)
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Epitaxial Growth, Doping, and Electron Transport of the Semiconducting Oxides In2O3, Ga2O3, and SnO2
O. Bierwagen
(PDI, Germany)
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Growth, characterization, and functionalization of graphene and hexagonal boron nitride
H. Hibino
(NTT BRL, Japan)
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Metal-Induced Crystallization - Fundamentals and Applications
Z. Wang
(Max Planck Inst., Germany)