Committees

Organizing Committee

Chair

K. Masu (Tokyo Tech)

Vice-Chair

T. Fukui (Hokkaido Univ.)

Members

• Y. Arakawa (Univ. of Tokyo)
• T. Asano (Kyushu Univ.)
• S. Fujita (Kyoto Univ.)
• M. Fukuma (SIRIJ)
• T. Hiramoto (Univ. of Tokyo)
• D. Hisamoto (Hitachi, Ltd.)
• H. Ishiwara (Tokyo Tech)
• H. Ito (Tokyo Electron LTD.)
• A. Kamisawa (Rohm Co., Ltd.)
• T. Kanayama (AIST)
• M. Konagai (Tokyo Tech)
• M. Koyanagi (Tohoku Univ.)
• K. Kyuma (Mitsubishi Electric Corp.)
• K. Matsumoto (Osaka Univ.)
• S. Miyazaki (Nagoya Univ.)
• N. Nagashima (Sony Corp.)
• K. Natori (Tokyo Tech)
• N. Saito (NHK)
• H. Sakaki (Toyota Technological Inst.)
• T. Shibata (JSAP)
• H. Shibata (Toshiba Corp.)
• T. Sogawa (NTT Basic Res. Labs.)
• T. Someya (Univ. of Tokyo)
• S. Tahara (NEC Corp.)
• A. Takahashi (Sharp Corp.)
• K. Takeuchi (Renesas Electronics Corp.)
• H. Umimoto (Panasonic Corp.)
• E. Yano (Fujitsu Labs. Ltd.)
• N. Yokoyama (AIST)
• S. Chung (National Chiao Tung Univ.)
• Y. H. Jeong (POSTECH)
• E. K. Kim (Hanyang Univ.)

International Advisory Committee

Members

• C. Y. Chang (NCTU)
• G. Declerck (IMEC)
• L. Esaki (Yokohama College of Pharmacy)
• J. S. Harris (Stanford Univ.)
• K. v. Klitzing (Max Planck Inst.)
• D. L. Kwong (IME)
• M. Nakamura (JST)
• Y. Nishi (Stanford Univ.)
• K. H. Ploog (Paul Drude Inst.)
• T. Sugano (Univ. of Tokyo)
• K. Takahashi (Tokyo Tech)

Steering Committee

Chair

Y. Miyamoto (Tokyo Tech)

Vice-Chair

S. Hara (Hokkaido Univ.)

Secretary

N. Nishiyama (Tokyo Tech)

Members

• K. Endo (AIST)
• H. Ito (Tokyo Tech)
• S. Iwamoto (Univ. of Tokyo)
• S. Kasai (Hokkaido Univ.)
• K. Ohmori (Univ. of Tsukuba)
• T. Shinada (AIST)
• T. Suemasu (Univ. of Tsukuba)
• M. Suga (JEOL Ltd.,)
• M. Sugiyama (Univ. of Tokyo)
• T. Teraji (NIMS)
• Y. H. Cho (KAIST)
• S. H. Lee (KAIST)
• N. J. Wu (Inst. of Semiconductors)
• Y. C. Yeo (National Univ. of Singapore)
• H. W. Zan (NCTU)

Program Committee

Chair

S. Takagi (Univ. of Tokyo)

Vice-Chair

• S. Fujita (Kyoto Univ.)
• A. Fujiwara (NTT Corporation)
• H. Wakabayashi (Tokyo Tech)
• E. Y. Chang (National Chiao Tung Univ.)

Secretary

• T. Sekitani (Osaka Univ.)
• T. Kawaharamura (Kochi Univ. of Tech)
• A. Tsujimura (Panasonic Corp.)

JJAP Special Issues Editors

• S. Higashi (Hiroshima Univ.)
• K. Kita (Univ. of Tokyo)
• S. Akita (Osaka Prefecture Univ.)

Area 1 Advanced LSI Processing & Materials Science

Chair

K. Kita (Univ. of Tokyo)

Vice-chair

• S. Migita (AIST)
• P.D. Ye (Purdue Univ.)

Members

• T. Aoyama (Toshiba Corp.)
• L. Grenouillet (CEA-LETI)
• K. Kakushima (Tokyo Tech)
• H. Morioka (Fujitsu Semiconductor Ltd.)
• O. Nakatsuka (Nagoya Univ.)
• T. Nakayama (Chiba Univ.)
• H. Nohira (Tokyo City Univ.)
• S. Tsujikawa (Sony Corp.)
• T. Tsunomura (Tokyo Electron Ltd.)
• T. Yamaguchi (Renesas Electronics Corp.)

Area 2 Advanced Interconnect and 3D Integration/ Materials and Characterization

Chair

M. Ueki (Renesas Electronics Corp.)

Vice-chair

• H. Ishii (Toyohashi Univ. of Tech.)
• K.N. Chen (National Chiao Tung Univ.)

Members

• M. Fujino (Univ. of Tokyo)
• T. Fukushima (Tohoku Univ.)
• J. Gambino (IBM)
• R. Ishihara (TU Delft)
• S. Itabashi (NTT Advanced Technology Corp.)
• M. Kodera (Toshiba Corp.)
• L. Patrick (CEA-LETI)
• S. G. Pyo (Chung-Ang Univ.)
• M. Sato (Fujitsu Labs. Ltd.)
• N. Sugiyama (Toray Research Center, Inc.)
• M. van der Veen (UPM IMEC)

Area 3 CMOS Devices / Device Physics

Chair

M. Masahara (AIST)

Vice-chair

• N. Sugii (LEAP)
• F.L. Yang (Academia Sinica)

Members

• T. S. Chao (National Chiao Tung Univ.)
• Y. Fukuzaki (Sony Corp.)
• M. Goto (Toshiba Corp.)
• M. Hane (Renesas Electronics Corp.)
• T. Hiramoto (Univ. of Tokyo)
• N. Mori (Osaka Univ.)
• N. Planes (STMicroelectronics)
• K. Sukegawa (Fujitsu Ltd.)
• H. Tokita (Renesas Electronics Corp.)
• G. Tsutsui (IBM)
• O. Weber (CEA-LETI)

Area 4 Advanced Memory Technology

Chair

T. Endoh (Tohoku Univ.)

Vice-chair

• K. Hamada (Micron Memory Japan Inc.)
• M.J. Tsai (Industrial Tech. Res. Inst.)

Members

• H. Hwang (Pohang Univ. of Sci. & Tech.)
• K. Kinoshita (Tottori Univ.)
• G. H. Koh (Samsung Electronics Co., Ltd.)
• M. H. Lee (Macronix International Co., Ltd.)
• H. Saito (Fujitsu Semiconductor Ltd.)
• T. Sakamoto (LEAP)
• Y. Sasago (Hitachi, Ltd.)
• S. Shuto (Toshiba Corp.)
• E. Yang (eMemory Technology Inc.)

Area 5 Advanced Circuits and Systems

Chair

K. Kagawa (Shizuoka Univ.)

Vice-chair

• Y. Mita (Univ. of Tokyo)
• N.J. Wu (Chinese Academy of Sci.)

Members

• I. Akita (Toyohashi Univ. of Tech.)
• J. C. Guo (National Chiao Tung Univ.)
• T. Matsuda (Toyama Prefectural Univ.)
• T. Minotani (NTT TELECON CO.,LTD.)
• K. Okada (Tokyo Tech)
• H. Takao (Kagawa Univ.)
• K. Takeuchi (Chuo Univ.)

Area 6 Compound Semiconductor Electron Devices & Related Technologies

Chair

N. Hara (Fujitsu Labs. Ltd.)

Vice-chair

• T. Suzuki (Japan Advanced Inst. of Sci. & Tech.)
• E.Y. Chang (National Chiao Tung Univ.)

Members

• K. J. Chen (Hong Kong Univ. of Sci.)
• T. Hashizume (Hokkaido Univ.)
• R. Hattori (Mitsubishi Electric Corp.)
• M. Kuzuhara (Univ. of Fukui)
• J. H. Lee (Kyungpook National Univ.)
• E. Lind (Lund Univ.)
• K. Maezawa (Univ. of Toyama)
• S. Sasa (Osaka Inst. of Tech.)
• J. Suda (Kyoto Univ.)
• T. Tanaka (Panasonic Corp.)

Area 7 Photonic Devices and Related Technologies

Chair

Y. Ishikawa (Univ. of Tokyo)

Vice-chair

• H. Oohashi (NTT Electronics Corp.)
• J. Liu (Dartmouth College)

Members

• H. Aruga (Mitsubishi Electric Corp.)
• F. Boeuf (STMicroelectronics)
• M. Fujita (Osaka Univ.)
• H. Fukuda (NTT Corp.)
• N. Iizuka (Toshiba Corp.)
• T. Isu (Univ. of Tokushima)
• K. Kojima (Tohoku Univ.)
• T. Mukaihara (Furukawa Electric Co., Ltd. )
• S. Saito (Univ. of Southampton)
• T. Shimizu (PETRA)
• D. Van Thourhout (Ghent Univ.)

Area 8 Advanced Material Synthesis and Crystal Growth Technology

Chair

T. Suemasu (Univ. of Tsukuba)

Vice-chair

• T. Nagata (NIMS)
• R. Nötzel (Technical Univ. of Madrid)

Members

• N. Fujimura (Osaka Pref. Univ.)
• Y. Hotta (Univ. of Hyogo)
• T. Iwai (Fujitsu Labs. Ltd.)
• T. Kawae (Kanazawa Univ.)
• A. Kikuchi (Sophia Univ.)
• K. Kumakura (NTT Basic Res. Labs.)
• Y. Matsumoto (Tohoku Univ.)
• E. S. Tok (National Univ. of Singapore)

Area 9 Physics and Applications of Novel Functional Devices and Materials

Chair

T. Machida (Univ. of Tokyo)

Vice-chair

• T. Tanamoto (Toshiba Corp.)
• P.W. Li (National Centeral Univ.)

Members

• D. Austing (National Res. Council of Canada)
• H. Inokawa (Shizuoka Univ.)
• Y. Ishikawa (Nara Inst. of Sci. & Tech.)
• A. Kimura (Hiroshima Univ.)
• K. Kobayashi (Osaka Univ.)
• G. Liang (National Univ. of Singapore)
• K. Matsuda (Kyoto Univ.)
• T. Nakaoka (Sophia Univ.)
• T. Ota (NTT Basic Res. Labs.)
• K. Terabe (NIMS)

Area 10 Organic Materials Science, Device Physics, and Applications

Chair

T. Someya (Univ. of Tokyo)

Vice-chair

• K. Fujita (Kyushu Univ.)
• P. Ho (National Univ. of Singapore)

Members

• H. Endoh (NEC Corp.)
• T. Hayashi (NTT Basic Res. Labs.)
• H. Kajii (Osaka Univ.)
• M. Kitamura (Kobe Univ.)
• T. W. Lee (Pohang Univ. of Sci. & Tech.)
• H. Matsui (Univ. of Tokyo)
• H. Murata (Japan Advanced Inst. of Sci. & Tech.)
• H. Okada (Univ. of Toyama)
• K. Shinbo (Niigata Univ.)
• K. Tajima (RIKEN)
• J. Takeya (Univ. of Tokyo)
• S. Tokito (Yamagata Univ.)

Area 11 Sensors and Materials for Biology, Chemistry and Medicine

Chair

J. Ohta (Nara Inst. of Sci. & Tech.)

Vice-chair

• T. Sakata (Univ. of Tokyo)
• C.S. Lai (Chang Gung Univ.)

Members

• H. M. Chen (National Chiao Tung Univ.)
• C. H. Liu (National Tsing Hua Univ.)
• S. Machida (Hitachi, Ltd.)
• M. Sasaki (Toyota Technological Inst.)
• T. Tanaka (Tohoku Univ.)
• H. Tanaka (Panasonic Corp.)
• R. Tero (Toyohashi Univ. of Tech.)

Area 12 Spintronics Materials and Devices

Chair

H. Munekata (Tokyo Tech)

Vice-chair

• Y. Suzuki (Osaka Univ.)
• C.Y. You (Inha Univ.)

Members

• K. Hamaya (Osaka Univ.)
• R. Jansen (AIST)
• S. Mizukami (Tohoku Univ.)
• T. Nagahama (Hokkaido Univ.)
• J. Nitta (Tohoku Univ.)
• J. Okabayashi (Univ. of Tokyo)
• Y. Saito (Toshiba Corp.)
• H. Shimizu (Tokyo Univ. of Agri. & Tech.)

Area 13 Applications of Nanotubes, Nanowires, and Graphene

Chair

S. Hara (Hokkaido Univ.)

Vice-chair

• Y. Ohno (Nagoya Univ.)
• P.W. Chiu (National Tsing Hua Univ.)

Members

• S. Akita (Osaka Pref. Univ.)
• M. Arita (Univ. of Tokyo)
• N. Fukata (NIMS)
• K. Kawaguchi (Univ. of Tokyo)
• T. Kawai (NEC Corp.)
• S. Lehmann (Lund Univ.)
• K. Maehashi (Osaka Univ.)
• K. Nagashio (Univ. of Tokyo)
• T. Takenobu (Waseda Univ.)
• G. Zhang (NTT Corp.)
• H. Miyazaki (Toshiba Corp.)

Area 14 Power Devices and Materials

Chair

M. Kato (Nagoya Inst. of Tech.)

Vice-chair

• H. Umezawa (AIST)
• C.F. Huang (National Tsing Hua Univ.)

Members

• G. Feng (Epi World International Co., LTD)
• S. Harada (Nagoya Univ.)
• D. Hisamoto (Hitachi, Ltd.)
• Y. Kawaguchi (Toshiba Corp.)
• H. Kim (Hongik Univ.)
• T. Makino (AIST)
• S. Matsumoto (Kyushu Inst. of Tech.)
• K. Nishiwaki (Toyota Motor Corp.)
• Y. Tanaka (AIST)
• T. Uesugi (Toyota Central R&D Labs. Inc.)

Area 15 Photovoltaic Materials and Devices

Chair

M. Isomura (Tokai Univ.)

Vice-chair

• K. Ohdaira (Japan Advanced Inst. of Sci. & Tech.)
• R.E.I Schropp (Energy res. Centre of the Netherlands )

Members

• L. S. Hong (National Taiwan Univ. of Sci. & Tech.)
• M. Ikegami (Toin Univ. of Yokohama)
• N. Kojima (Toyota Technological Inst.)
• Y. Kurokawa (Tokyo Tech)
• K. Nishioka (Univ. of Miyazaki)
• T. Okamoto (Kisarazu National College of Tech.)
• T. Taima (Kanazawa Univ.)
• S. Yata (Panasonic Corp.)
• M. Zeman (TU Delft)