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History of SSDM Paper Award
| Year of Award | Year of presentaion | Presentation number | Paper Title | Authors | Affiliation (Country) |
| SSDM2014 46th |
2013 | B-1-2 | Thermal and Plasma Treatments for Improved (Sub-)1nm EOT Planar and FinFET-based RMG High-k Last Devices and Enabling a Simplified Scalable CMOS Integration Scheme | A. Veloso1, G. Boccardi1, L.Å. Ragnarsson1, Y. Higuchi2, H. Arimura1,3, J.W. Lee1,3, E. Simoen1, M.J. Cho1, Ph.J. Roussel1, V. Paraschiv1, X. Shi1, T. Schram1, S.A. Chew1, S. Brus1, A. Dangol1, E. Vecchio1, F. Sebaai1, K. Kellens1, N. Heylen1, K. Devriendt1, H. Dekkers1, A. Van Ammel1, T. Witters1, T. Conard1, I. Vaesen1, O. Richard1, H. Bender1, R. Athimulam1, T. Chiarella1, A. Thean1 and N. Horiguchi1 | 1Imec, 2Panasonic and 3K. U. Leuven |
| SSDM2013 45th |
2012 | J-5-2 | Eight-bit CPU with Nonvolatile Registers Capable of Holding Data for 40 Days at 85°C Using Crystalline In-Ga-Zn Oxide Thin Film Transistors | T. Ohmaru, S. Yoneda, T. Nishijima, E. Masami, H. Dembo, M. Fujita, H. Kobayashi, K. Ohshima, T. Atsumi, Y. Shionoiri, K. Kato, Y. Maehashi, J. Koyama and S. Yamazaki | Semiconductor Energy Lab. Corp. Ltd., Japan |
| SSDM2012 44th |
2011 | F-1-2 | Studies on Static Noise Margin and Scalability for Low-Power and High-Density Nonvolatile SRAM using Spin-Transfer-Torque (STT) MTJs | T. Ohsawa, F. Iga, S. Ikeda, T. Hanyu, H. Ohno and T. Endoh | Tohoku Univ., Japan |
| SSDM2011 43rd |
2010 | D-5-4L | Stimulated Emission in Silicon Fin Light-Emitting Diode | S. Saito1,3, K. Tani1,3, T. Takahama1, M. Takahashi1, E. Nomoto1, Y. Matsuoka1, J. Yamamoto1, Y. Suwa2,3, D. Hisamoto1, S. Kimura1, H. Arimoto1, T. Sugawara1, M. Aoki1, K. Torii1 and T. Ido1,3 | 1Hitachi ,Ltd., Central Res. Lab., 2Hitachi Advanced Res. Lab. and 3PECST, Japan |
| SSDM2010 42nd |
2009 | K-4-3 | Carrier-induced Dynamic Backaction in GaAs Micromechanical Resonators | H. Okamoto1, D. Ito1,2, K. Onomitsu1, H. Sanada1, H. Gotoh1, T. Sogawa1 and H. Yamaguchi1,2 | 1NTT Basic Res. Labs. and 2Tohoku Univ., Japan |
| SSDM2009 41st |
2008 | B-1-3 | High Mobility sub-60nm Gate Length Germanium-On-Insulator Channel pMOSFETs with Metal Source/Drain and TaN MIPS Gate | K. Ikeda1, Y. Yamashita1, M. Harada1, T. Yamamoto1, S. Nakaharai1, N. Hirashita1, Y. Moriyama1, T. Tezuka1, N. Taoka2, I. Watanabe3, N. Hirose3, N. Sugiyama1 and S. Takagi2,4 | 1MIRAI-ASET, 2MIRAI-ASRC, 3NICT and 4Univ. of Tokyo, Japan |
| SSDM2008 40th |
2007 | A-3-4 | nMOSFET Reliability Improvement attributed to the Interfacial Dipole formed by La Incorporation in HfO2 | C. Y. Kang1, P. Kirsch2, D. Heh1, C. Young1, P. Sivasubramani1, G. Bersuker1, S. C. Song1, R. Choi1, B. H. Lee2, J. Lichtenwalner3, J. S. Jur3, A. I. Kingon3, and R. Jammy2 | 1SEMATECH, USA, 2IBM Assignee, USA, 3North Carolina State Univ., USA |
| D-8-5 | Fabrication of single electron transistor using cage-shaped protein supramolecule | S. Kumagai1, S. Yoshii1, N. Matsukawa1, R. Tsukamoto3, K. Nishio1, and I. Yamashita1,2,3 | 1 Matsushita Electric Industrial Co., Ltd., Japan, 2 NAIST, Japan, 3 Core Research for Evolutional Sci. and Tech., Japan | ||
| SSDM2007 39th |
2006 | A-2-2 | Optical Properties of Dynamically-Modulated Dots and Wires Formed by Surface Acoustic Waves | T. Sogawa1, H. Gotoh1, Y. Hirayama1, T. Saku1, S. Miyashita2, P. V. Santos3, and K. H. Ploog3 | 1NTT Basic Research Labs., Japan, 2NTT Advanced Technology Corp., Japan, 3Paul Drude Institute, Germany |
| SSDM2006 38th |
2005 | A-1-3 | Extendibility of High Mobility HfSiON Gate Dielectrics | S. Inumiya, T. Miura, K. Shirai, T. Matsuki, K. Torii* and Y. Nara | Semiconductor Leading Edge Technologies, Inc., Japan |
| I-1-2 | High-Voltage 4H-SiC RESURF MOSFETs Processed by Oxide Deposition and N2O Annealing | T. Kimoto, H. Kawano, M. Noborio, and J. Suda | Kyoto University, Japan | ||
| SSDM2005 37th |
2004 | H-7-4 | Observation of Light Emission at 〜1.5 µm from InAs Quantum Dots in Photonic Crystal Microcavity | S. Iwamoto, J. Tatebayashi, T. Fukuda, T. Nakaoka, S. Ishida and Y. Arakawa | University of Tokyo, Japan |
| C-10-1 | Dielectric Constant Increase of Yttrium-Doped HfO2 by Structural Phase Modification | K. Kita, K. Kyuno and A. Toriumi | University of Tokyo, Japan | ||
| SSDM2004 36th |
2003 | F-9-2 | 100-Gbit/s Full-Rate Operation of PD-EAM Optical Gate for Retiming Function | T. Yoshimatsu, S. Kodama, K. Yoshino and H. Ito | NTT Corp., Japan |
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