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History of SSDM Award
| Year of the award | Awarded thesis | ||||
| Conference number held | Year of presentaion | Thesis number | Name of awardees | Title of thesis | |
| 25th (2014) | 24th | 1992 | S-IV-3 | ULSI Research Center, Toshiba Corporation | High Speed 0.1µm CMOS Devices Operating at Room Temperature |
| 24th (2013) | 9th | 1977 | C-1-1 | Fujitsu Laboratories Ltd. | C-band 10W Power GaAs MESFET with an Internal Matching Circuit |
| 9th | 1977 | C-1-2 | Central Research Laboratories, Nippon Electric Co. Ltd. | X- and Ku-band Performance of Submicron Gate GaAs Power FETs | |
| 23rd (2012) | 13th | 1981 | A-3-8 | Fujitsu Laboratories Ltd. | Ammonia annealed SiO2 films for thin gate insulator |
| 22nd (2011) | 17th | 1985 | C-3-9 LN |
Nanoelectronics Research Institute of AIST, *Nanosystem Research Institute of AIST, **(Ex) Nanoelectronics Research Institute of AIST, ***Corporate Technology Planning Center, Ricoh Company, Ltd. | XMOS Transistor for a 3D-IC |
| 21st (2010) | 18th | 1986 | A-7-4 | Univ. of Tsukuba | Thermodynamical Approach to a New High Dielectric Capacitor Structure: W/HfO2/W |
| 20th (2009) | 25th | 1993 | PB-3-9 | Univ. of Tsukuba | Ⅰ-Ⅴ Characteristics of SOI MOSFETs in Ballistic Mode |
| 19th (2008) | 2nd | 1970 | 1-1 | Tokyo Tech. | Vacancy Distribution Theory for Ion-Implanted Target |
| 18th (2007) | 3rd | 1971 | 5-2 | Univ. of Tokyo | Anistropic Channel Conductivity of a MOS Transistor on the (110) Surface of Silicon |
| 17th (2006) | 14th | 1982 | B-2-3 | Tokyo Tech. | Threshold Condition and Design of Surface Emitting GaInAsP/InP Injection Lasers |
| 16th (2005) | 19th | 1987 | C-4-2 | Kyoto Univ., Japan | Step-Controlled VPE Growth of SiC Single Crystals at Low Temperatures |
| 15th (2004) | 22th | 1990 | S-CII-4 | Mitsubishi Electric, Japan | Fabrication of Storage Capacitance-Enhanced Capacitors with a Rough Electrode |
| 22th | 1990 | S-CII-5 | NEC, Japan | A New Stacked Capacitor Structure using Hemispherical-Grain(HSG) Poly-Silicon Electrodes | |
| 14th (2003) | 24th | 1992 | S-1-1 | Meijo Univ., Japan | Room Temperature Ultraviolet/Blue Light Emitting Devices Based on AlGaN/GaN Multi-Layered Structure |
| 13th (2002) | 3th | 1971 | 5-5 | Toshiba Research and Development Center, Japan | Avalanche-Injection MOS Read-Only Memory |
| 12th (2001) | 6th | 1974 | B-3-3 | Tohoku Univ., Japan | Biomedical Cation Sensor Using Field Effect of Semiconductor |
| 11th (2000) | 4th | 1972 | 6-1 | Hitachi, Japan | Properties of MOS Structures Prepared on Substrates Having Ion-Implanted Impurity Distribution Profile |
| 9th (1998) | 12th | 1980 | C-3-9 (LN) |
Fujitsu Labs., Japan | An Enhancement-Mode High Electron Mobility Transistor for VLSI |
| 10th (1999) | 6th | 1974 | B-2-1 | Mitsubishi, Japan | The Application of Gas Plasma to the Fabrication of MOS LSI (Invited) |
| 18th | 1986 | B-8-4 | Toshiba, Japan | Improvement of Silicon Surface Quality by H2 Anneal | |
| 8th (1997) | 12th | 1980 | A-4-7 | NTT, Japan | High Speed Bipolar ICs Using Super Self-Aligned Process Technology |
| 7th (1996) | 11th | 1979 | A-3-7 | NTT, Japan | High Speed C-MOS IC Using Buried SiO2 Layers Formed by Ion Implantation |
| 6th (1995) | 5th | 1973 | 3-4 | Nippon Electric, Japan | Degradation of AlxGa1-xAs Double Heterostructure Lasers |
| 5th (1994) | 10th | 1978 | A-1-4 | Hitachi, Japan | Novel High Density, Stacked Capacitor MOS RAM |
| 4th (1993) | 7th | 1975 | A-1-1 | Toshiba, Japan | A New Chemical Dry Etching |
| 3rd (1992) | 11th | 1979 | C-3-4 | ETL, *Komatsu Electronic Metals and **Shin-Etsu Handotai, Japan | Characterization of Residual Impurities in Highly Pure Si Crystals by Photoluminescence Technique |
| 2nd (1991) | 6th | 1974 | A-1-1 | Hitachi, Japan | Buried-Heterostructure Injection Lasers |
| 1st (1990) | 1st | 1969 | 4-1 | ETL, Japan | Diffusion Self-Aligned MOST: A New Approach for High Speed Device |
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