SCOPE

CORE AREAS

Area 1

Advanced Silicon Circuits and Systems
(Chair, T. Kuroda, Keio Univ.)

Original papers bridging the gap between materials, devices, circuits, and systems, are solicited in the subject areas including, but not limited to, the following: (1) Advanced digital, analog, mixed-signal, and memory, (2) Wireless, wireline, and optical communications, (3) Imagers, displays, and MEMS, (4) Low power technologies and power aware systems, (5) High speed circuits and systems, (6) Technologies for systems on a chip, (7) New concept and technologies; based on nanoelectronics, quantum mechanics, 3D-electronics, ferroelectrics, and photonics; using neural network, fuzzy logic, and multi-valued logic; and for bio-medical and microfluidic applications.

Invited speakers:
"Sub-100nm MOSFET Modeling for Integrated-Circuit Design"
A. Vladimirescu (UC Berkeley, USA)
"Impact of Device Scaling on High Speed I/O"
K. Yang (UCLA, USA)

Area 2

Advanced Silicon Devices and Device Physics
(Chair, K. Shibahara, Hiroshima Univ.)

The scope of this subcommittee covers all aspects of advanced silicon devices and device technologies for circuit applications. Papers are solicited in the following areas: (1) Sub-100nm silicon CMOS devices and their integration technologies including logic, memory and merged logic/memory LSIs, (2) Post-bulk-planar silicon device structures, including mobility enhancement technologies such as a strained-silicon, SiGe and Ge channels, (3) New concepts, theories and breakthroughs in silicon-related devices, passive devices and other functional devices, (4) Physics and reliability for advanced processes/devices including simulation and modeling and (5) Manufacturing and yield issues.

Invited speakers:
"Advanced CMOS Transistors with Strained Si/SiGe Channel and High-K/Metal Gate Stack"
S. Datta (Intel, USA)
"Nanoscale Device Simulation at the Scaling Limit and Beyond" (tentative)
G. Klimeck (Purdue Univ., USA)
"Gate Stress Induced Performance Enhancements" (tentative)
Z. Krivokapic (AMD, USA)
"Design Consideration of Body-Tied Double-Triple Gate MOSFET"
T. Park (Seoul National Univ., Korea)
"Ge and SiGe MOS Devices" (tentative)
K. Saraswat (Stanford Univ., USA)

Area 3

Silicon Process/Materials Technologies (Chair, N. Kobayashi, Selete)

The session consists of advanced process and materials technologies for Si ULSI applications. Strongly encouraged are the topics of material innovations to improve device performance, manufacturability, and costefficiency. Papers are solicited in, but not limited to, the following areas: (1) Novel materials technologies such as high-k, ultra-low-k insulators and metal gates to break through the scaling limitations of CMOS Logic, Memory, and new-concept devices (2) Key materials and process technologies to integrate 65-90 nm Si ULSIs such as shallow junction and strained-Si processes (3) Reliability of FEOL and BEOL processes for high-yield manufacturing.

Invited speakers:
"Interconnect Application of Carbon Nanotube"
Y. Awano (Fujitsu Labs., Japan)
"Stress Migration Phenomena of Copper Interconnect"
J. Koike (Tohoku Univ., Japan)
"Integrating Diffusionless Anneals into 45nm CMOS"
R. Lindsay (IMEC, Belgium)
"Electrical Characterization of High-k Gated MOSFETs and Interfaces"
T. P. Ma (Yale Univ., USA)

Area 4

Silicon-on-Insulator Technologies
(Chair, A. Ogura, NEC)

SOI devices are now commercially available. Simultaneously, SOI is recognized as a basic structure to realize future advanced devices such as patterned SOI, SON (Si on nothing), FinFET, SGOI (SiGe on insulator) and SSOI (strained-Si on insulator), and so on. This subcommittee covers the whole field of SOI and SOIrelated new technologies in a wide range of interests from circuit design to material issues. The topics will include, but not be limited to: (1) SOI Circuit Technology and LSI Applications (High Speed, Low Power Consumption, RF, Analog/Linear, etc), (2) New Structure Devices (Double, Triple, Quadruple Gate, FinFET, Vertical Channel, Quantum, Strained Channel, Multi-Layer Devices, etc.), (3) Process Issues for Device Manufacturing (Isolation, Silicidation, Metal Gate, Plasma Damage, etc), (4) Physics and Modeling of SOI Device/Process and Circuits (floating-body effect, self-heating, etc), (5) SOI Materials Characterization and Manufacturing, and (6) Reliability Issues (Hot Carrier Injection, GOI, Radiation Effects, ESD, etc).

Invited speakers:
"SOI Floating Body Memories for Embedded Memory Applications"
P. Fazan (Innovative Silicon S.A., Switzerland)
"Development of SGOI and sSOI for High Volume Manufacturing"
C. Mazure (SOITEC, France)
"Fully Depleted SOI Technology for Ultra-Low Power Application"
F. Ichikawa (Oki Electric, Japan)
"SOI Transistor/Power Scaling and Scaling-Strengthened Strain"
F.L. Yang (TSMC, Taiwan)

Area 5

New Materials and Characterization for Silicon LSIs
(Chair, S. Takagi, Univ. of Tokyo)

Introduction and utilization of new materials are expected as a key concept for further evolution and functionarization of Si-based logic and memory LSIs. Also, novel characterization techniques are indispensable in realizing these advance devices. Papers are solicited in the following areas (but not limited to these subjects): (1) Characterization and processing of group-IV semiconductors, high-k and low-k dielectrics and other new materials, including diamond, silicides (germanides), nano-tubes, fullerene and any other materials applicable to Si-based LSIs, (2) Physics and chemistry of surface and interface phenomena (including oxidation and nitridation), (3) Reliability physics and failure analysis of gate oxides and interconnect systems, (4) New characterization method for devices and materials including in-situ monitoring and nanometer-scale characterization. Submission of papers at a germinal stage is also encouraged.

Invited speakers:
"Reliability Issues on High k Gate Dielectrics"
R. Degraeve (IMEC, Belgium)
"To be announced"
J.C. Sturm (Princeton Univ.)
"Nanoelectronic Scaling Tradeoffs: What Does Materials Physics Have to Say?"
V. Zhirnov (SRC, USA)

Area 6

Compound Semiconductor Materials and Devices
(Chair, K. Kojima, Mitsubishi Electric)

Compound semiconductors are the key materials supporting the highly information oriented society. This area deals with III-V, II-VI compound semiconductors including wide gap GaN and ZnO, and magnetic semiconductors. The materials also includes other compound semiconductors such as SiC, FeSi2 and so on. Compound Semiconductor Materials and Devices besides covers the following areas (but not limited): (1) Growth and characterization, (2) Heterostructures and superlattices, (3) Optical devices (LEDs, LDs and detectors) and electron devices (HFETs and HBTs), their device processing and reliability.

Invited speakers:
"InGaAs Based Quantum Wells for Ultrafast All-Optical Switches Using Intersubband Transitions"
T. Mozume (FESTA, Japan)
"Diamond MISFETs for High Frequency Applications"
H. Umezawa (Waseda Univ., Japan)

Area 7

Optoelectronic Devices and Photonic Crystal Devices
(Chair, O. Wada, Kobe Univ.)

Towards ubiquitous communication and computing, optoelectronic devices are expected to explore novel functions and enhance performance by utilizing novel device physics and developing advanced fabrication techniques. The scope of this subcommittee covers all aspects of emerging technologies in active, passive, and integrated optoelectronic and photonic devices, which includes (1) Laser diodes, LEDs, photodetectors, SOAs, and OEICs, (2) Photonic crystal materials and novel functional devices, (3) Optical switches, modulators, and MEMS, (4) Optical wavelength converters, nonlinear optical devices, and all-optical switches, (5) Waveguide components, PLCs and integrated photonic circuts, (6) Material and device processing and characterization techniques, (7) Hybrid and monolithic integration, packaging and moduling, and (8) Optical communication, interconnection and signal processing applications of optoelectronic and photonic devices.

Invited speakers:
"All-Optical Signal Processing Based on Ultrafast Nonlinearities in Semiconductor Optical Amplifiers"
H.J.S. Dorren (Eindhoven Univ. of Technology, Netherlands)
"PBG Resonators and Waveguides in Photonic Crystal Slabs"
M. Notomi (NTT, Japan)
"Photonic Band Fiber and Fiber Based Devices; Design and Fabrication"
M. Ogai and D.J. Trevor (OFS Fitel Labs., USA)
"InGaAsN as a Material for Novel Long-wavelength Lasers"
H. Riechert (Infineon Technologies, Germany)
"Quantum Dot SOAs for Optical Signal Processing"
M. Sugawara (Univ. of Tokyo, Japan)
"All-Optical Devices for Nx160Gb/s DWDM/OTDM Transmission Systems-"
A. Suzuki (FESTA, Japan)

Area 8

Novel Devices, Physics and Fabrication
(Chair, K. Ishibashi, RIKEN)

The aim of this subcommittee is to explore novel devices and physics, mainly in nanoscale, with inorganic and molecular materials. Papers are solicited in the following areas, but not limited to: (1) Quantum phenomena in nanoscale, (2) Quantum dots and single electron devices, (3) Solid state quantum computing, (4) Spintronics, (5) New nanoscale materials such as carbon nanotubes, (6) Molecular electronics, (7) Other novel devices such as small superconducting device and resonant tunneling device. (8) Nanofabrication, nanomechanics and characterization techniques in nanoscale.

Invited speakers:
"To be announced"
M. Fuhrer (Univ. of Maryland)
"Solid-Electrolyte Nanometer Switch Implemented in Si LSI"
T. Sakamoto (NEC, Japan)

Area 9

Quantum Nanostructure Devices and Physics
(Chair, Y. Hirayama, NTT)

The field covers recent progress in physics, fabrication, characterization and device applications of nanostructures. The main topics includes (1) Growth and processing of quantum dots and nanostructures. (2) Transport/optical properties and THz/Femto-second dynamics (3) Nanometer-scale characterization such as SPM and SNOM (4) Nano electronic/optical devices (5) Novel nanostructures and nanomaterials such as photonic crystals and magnetic nanostructures. (6) Spin and carrier control in quantum nanostructures.

Invited speakers:
"Coherent Manipulation of Electronic States in Double Quantum Dots"
T. Fujisawa (NTT, Japan)
"Nanostructure Formation Using Self-Assembled and Patterned Processes"
D.L. Huffaker (Univ. of New Mexico, USA)
"Integrated Nanoscale Mechanics and Electronics"
R. Knobel (Queen's Univ. Canada)
"Light-Emitting Diodes Based on InP Quantum Dots in GaP"
W.T. Masselink (Humboldt Univ. Berlin, Germany)