COMMITTEES

Program Committees

Chair: J. Sone (NEC)
Vice-Chair: Y. Hirayama (NTT) / A. Toriumi (Univ. of Tokyo)
Secretary: T. Mogami (NEC)

Subcommittee Members:
[1] Advanced Silicon Circuits and Systems

Chair:	T. Kuroda (Keio Univ.)
Members:	M. Fujishima (Univ. of Tokyo) H. Ishikuro (Toshiba) Y. Kanno (Hitachi) M. Nagata (Kobe Univ.) M. Takamiya (NEC) Z. Wang (Tsinghua Univ.) H.J. Yoo (KAIST)

[2] Advanced Silicon Devices and Device Physics

Chair:	K. Shibahara (Hiroshima Univ.)
Members:	T.Y. Huang (National Chiao Tung Univ.) S. Inaba (Toshiba) T.J. King (Univ. of California at Berkeley) K. Kurimoto (Matsushita Electric) Y. Momiyama (Fujitsu) H. Oda (Renesas) M. Ogawa (Kobe Univ.) N. Sugii (Hitachi) K. Takeuchi (NEC) C.C. Wu (TSMC)

[3] Silicon Process / Materials Technologies

Chair:	N. Kobayashi (Selete)
Members:	M. Hori (Nagoya Univ.) H.K. Kang (Samsung Electronics) T. Kobayashi (Sony) J. Koike (Tohoku Univ.) T.P. Ma (Yale Univ.) T. Nakamura (Fujitsu Labs.) T. Noda (Matsushita Electric) M. Okuyama (Osaka Univ.) S. Saito (NEC) Y. Tsunashima (Toshiba)

[4] Silicon-on-Insulator Technologies

Chair:	A. Ogura (NEC)
Members:	O. Faynot (LETI) K. Inoh (Toshiba) T. Iwamatsu (Renesas) Y. Kado (NTT) H. Kang (Samsung Electronics) H. Matsuhashi (Oki Elecric) M.A. Mendicino (Motorola) T. Nakai (Sumitomo Mitsubishi Silicon) O. Nishino (Sharp) M. Terauchi (Hiroshima City Univ.)

[5] New Materials and Characterization for Silicon LSIs

Chair:	S. Takagi (Univ. of Tokyo)
Members:	Y. Awano (Fujitsu Labs.) K. Kikuta (NEC) C. Liu (National Taiwan Univ.) L. Manchanda (SRC) S. Miyazaki (Hiroshima Univ.) J. Murota (Tohoku Univ.) A. Sakai (Nagoya Univ.) H. Satake (Toshiba) J. Yugami (Renesas)

[6] Compound Semiconductor Materials and Devices

Chair:	K. Kojima (Mitsubishi Electric)
Members:	T. Hashizume (Hokkaido Univ.) Y. Horikosi (Waseda Univ.) J.T. Hsu (OES/ITRI) M. Ikeda (Sony) N. Kobayashi (The Univ. of Electro-Communications) K. Ohtani (Tohoku Univ.) T. Takahashi (Fujitsu Labs.)

[7] Optoelectronic Devices and Photonic Crystal Devices

Chair:	O. Wada (Kobe Univ.)
Members:	S. Arahira (Oki Electric) S. Lee (Korea Inst. of Science and Technol.) S. Matsuo (NTT Photonics Labs.) T. Mizumoto (Tokyo Tech) T. Nishimura (Mitsubishi Electric) S. Noda (Kyoto Univ.) H. Shimizu (Furukawa) N. Suzuki (Toshiba) H. Yamada (NEC)

[8] Novel Devices, Physics and Fabrication

Chair:	K. Ishibashi (RIKEN)
Members:	P. Hadley (Delft Univ. of Technol.) Y. Homma (NTT) S. Hwang (Korea Univ.) Y. Kuwahara (Osaka Univ.) K. Matsumoto (Osaka Univ.) Y. Miyamoto (Tokyo Tech) M. Tabe (Shizuoka Univ.) J.S. Tsai (NEC)

[9] Quantum Nanostructure Devices and Physics

Chair:	Y. Hirayama (NTT)
Members:	H. Akinaga (AIST) D.G. Austing (National Research Council) E.Y. Chang (National Chiao Tung Univ.) K. Hirakawa (Univ. of Tokyo) J. Motohisa (Hokkaido Univ.) R. Noetzel (Eindhoven Univ. of Technol.) Y. Ohno (Tohoku Univ.) P.V. Santos (Paul-Drude-Inst. fuer Festkoerperlektronik) M. Sugawara (Univ. of Tokyo)

[10] Non-Volatile Memory Technologies

Chair:	T. Kobayashi (Hitachi)
Members:	G. Fox (Ramtron International) J.V. Houdt (IMEC) K. Kim (Samsung Electronics) T. Nakamura (Rohm) T. Nakanishi (Fujitsu Labs.) K. Saito (NEC) Y. Shimada (Matsushita Electric) H. Takada (Mitsubishi Electric) K. Yoshikawa (Toshiba)

[11] SiGe/III-V/III-N Devices and Circuits for Wireless and Optical Communications

Chair:	N. Suematsu (Mitsubishi Electric)
Members:	Y.J. Chan (National Central Univ.) T. Enoki (NTT Photonics Labs.) H. Miyamoto (NEC) M. Madihian (NEC Labs. America) K. Morizuka (Toshiba) K. Oda (Hitachi) Y. Tateno (Fujitsu)

[12] System-Level Integration and Packaging Technologies

Chair:	K. Takahashi (ASET)
Members:	M.K. Iyer (IME) M. Aoyagi (AIST) T. Asano (Kyushu Inst. of Technol.) H. Ezawa (Toshiba) K. Fujimoto (Osaka Univ.) M. Kada (Sharp) M. Kimura (Renesas) T. Suga (Univ. of Tokyo) M. Swaminathan (Georgia Inst. of Technol.) S. Yamamichi (NEC)

[13] Organic Semiconductor Devices and Materials

Chair:	M. Iwamoto (Tokyo Tech)
Members:	C. Adachi (Chitose Inst. of Science and Techinology) T. Kamata (AIST) K. Kato (Niigata Univ.) K. Kudo (Chiba Univ.) Y.W. Park (Seoul National Univ.) A. Sugimura (Osaka Sangyo Univ.) H. Tada (Okazaki National Research Inst.) H. Usui (Tokyo Univ. of Agriculture and Technol.)

[14] Micro-Nano Electromechanical Devices for Bio- and Chemical Applications

Chair:	Y. Miyahara (NIMS)
Members:	A. Manz (ISAS Dortmund) T. Fujii (Univ. of Tokyo) T. Ichiki (Toyo Univ.) M. Kamahori (Hitachi) M. Sasaki (Tohoku Univ.) K. Sawada (Toyohashi Univ. of Technol.) K. Shimoide (Asahi Kasei) M. Sriyudthsak (Chulalongkorn Univ.) H. Tabata (Osaka Univ.)