Members: |
Y.
Aoyagi (Tokyo Inst. of Technol.)
M. Fukuma (NEC)
H. Hasegawa (Hokkaido Univ.)
T. Hattori (Sony)
M. Hirose (AIST)
Y. Horiike (Univ. of Tokyo)
A. Ibaraki (Sanyo)
F. Ichikawa (Oki Electric)
T. Ikoma (Hitotsubashi Univ.)
S. Ishihara (NTT)
T. Kamiya (Natl. Inst. for Academic Degrees)
M. Kanazawa (ASET)
K. Maeguchi (Toshiba)
H. Matsunami (Kyoto Univ.)
H. Morimoto (Sharp)
A. Morino (Selete)
K. Natori (Univ. of Tsukuba)
T. Nishimura (Mistubishi Electric)
T. Ohmi (Tohoku Univ.)
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T.
Ohta (Tokyo Electron)
H. Sakaki (Univ. of Tokyo)
F. Sato (NHK)
Y. Shimanuki (Sumitomo Mitsubishi Silicon)
Y. Shiraki (Univ. of Tokyo)
T. Suga (Univ. of Tokyo)
K. Tada (Yokohama Natl. Univ.)
H. Takasu (Rohm)
E. Takeda (Hitachi)
K. Tanaka (AIST)
K. Taniguchi (Osaka Univ.)
Y. Todokoro (Matsushita Electric)
K. Tsubouchi (Tohoku Univ.)
T. Tsurushima (Kumamoto
Technopolis Foundation)
J. Ueda (SIRIJ)
Y. Yasuda (Nagoya
Univ.)
N. Yokoyama (Fujitsu Labs.)
H. Watanabe (NEC) |