FINAL ANNOUNCEMENT

STRATEGIC AREAS
[10] Non-Volatile Memory Technologies
(Chair, K. Takasaki, Fujitsu Lab.)
 

"Non-volatile Memories" session solicits all NV memory (Flash, FeRAM, EPROM, EEPROM, Anti-fuse, MRAM & others) technology related papers. Topics relating to NV devices include cell device physics & characterization, processing & materials, tunnel dielectrics, ferroelectric materials, reliability, failure analysis, quality assurance & testing, modeling & simulation, integrated circuits, new concept technologies, and new applications & systems (solid state disks, memory cards, programmable logic,-).

Invited speakers:

"Floating gate type nonvolatile memory reliability issues"
G. Tempel (Infineon, Germany)
"Current FeRAM technology developments and scaling towards 3-D capacitor cells"
D. Wouters (IMEC, Belgium)
"32Mb Chain FeRAM-An Overview"
D. Takashima (Toshiba, Japan)
"Prospect of Emerging Memories"
H. Jeong (Samsung, Korea)
 
[11] SiGe/III-V/III-N Devices and Circuits for Wireless and Optical Communications
(Chair, T. Enoki, NTT)
 

Compound-semiconductor devices are playing important roles in wireless and optical communications systems. Future communications systems definitely require devices and circuits that dissipate lower energy, operate at higher bit rates or frequencies, have lower noise, generate higher signal power, and are more compact. This session covers advanced device and IC technologies that meet these challenges through the use of SiGe, GaAs-based, InP-based, and N-based materials (but not limited). Monolithic ICs or multi-chip modules integrating optical and electrical devices will also be discussed. Papers demonstrating breakthroughs and novel concepts, discussing on potentials and limitations, and addressing issues in these technologies are strongly solicited for this session.

Invited speakers:

"High-Performance, Low-Cost SiGe:C BiCMOS Technology"
B. Tillack (IHP, Germany)
"High-speed III-V HEMT and HBT devices and circuits for ETDM transmission beyond 80 Gbit/s"
R. Quay (Fraunhofer IAF, Germany)
"GaN-based microwave power devices: A survey on the activities in Europe"
J. Wuerfl (Ferdinand-Braun-Institut fuer Hoechstfreguenztechnik, Germany)
"Development of AlGaN/GaN power HFET for the application of an inverter circuit"
S. Yoshida (The Furukawa Electric, Japan)
 
[12] System-Level Integration and Packaging Technologies
  (Chair, K. Takahashi, ASET)
 

The scope of this subcommittee involves all features of advanced packaging technologies and system-level integration technologies based on packaging technology. Papers are solicited in, but not limited to, the following areas: (1) Advanced packaging technologies including chip size package (CSP), wafer-level package, stacked package, (2) Three-dimensional (3D) integration technology including wafer stacking and chip stacking, (3) System integration technologies including SiP (system-in-package), SoP (system-on-package), opto-electronics integration and MEMS, (4) Design and CAD technologies for the advanced packaging and system integration including interface design, EMI and EMC management and ultra-high speed data transfer technologies, (5) Testing technologies for the system integration including burn-in, known good die (KDG) and design for test (DFT), (6) Modeling and simulation of thermal, mechanical and electrical performance of advanced packaging and system integration.

Invited speakers:

"3D System Integration by Chip-to-Wafer Stacking Technologies"
P. Ramm (Fraunhofer IZM, Germany)
"AC Coupled Interconnect for high density high bandwidth packaging"
P.D. Franzon (North Carolina State Univ., USA)
"System Packaging and Embedded WLP Technologies for Mobile Products"
T. Wakabayashi (Casio, Japan)
"Design, Manufacuturing and Infrastructure for All-in-One SiP Solution"
T. Fujitsu (J-SiP Walton, Japan)
 
[13] Organic Semiconductor Devices and Materials
  (Chair, M. Iwamoto, Tokyo Institute of Technology)
 

Electronic and Optical processes in organic materials and device application in the following fields (but not limited): (1) Organic transistors, diodes and circuits (2) Organic light emitting devices (3) Organic photodetectors and photovoltaic devices (4) Chemical sensors and gas sensors (5) Fabrication and characterization of organic thin films (6) Electrical and Optical properties of organic thin film and materials (7) Organic-inorganic hybrid systems (8) Interfacial phenomena, LC devices, etc.

Invited speakers:

"Potential Profile and Opto-Electronic Properties at Nano-interface of Conducting Polymer and Metals"
K. Kaneto (Kyushu Institute of Technology, Japan)
"Semiconductor materials design for low-cost plastic thin film transistors"
B. Ong (Xerox, Canada)
 
[14] Micro-Nano Electromechanical Devices for Bio- and Chemical Applications
  (Chair, Y. Miyahara, National Institute for Materials Science)
 

Micro/nano electromechanical devices (M/NEMS) are now widely applied to biochemical, medical and environmental fields and a new research field called μ-TAS or Lab. on a Chip is expanding and being established. Fusion of microelectronic devices with materials and methods in the chemical, biological, and mediacl fields is expected to open up new scientific and business fields. Papers are solicited in the following areas (but not limited): (1) Micro/nano electronic mechanical system (M/NEMS) for RF, optical, power and others, (2) μ-TAS and Lab on a chip, (3) Various Bio-chips for DNA, healthcare and proteins, (4) Fabrication technologies and (5) New integrated micro/nano systems for biochemical and medical applications.

Invited speakers:

"Development of an integrated a-Si:H photodiode detector and its evaluation for chemical and biochemical microfluidic analysis"
T. Kamei (Univ. of California, USA)
"DNA chips and their medical applications"
P. Fortina (Thomas Jefferson Univ., USA)