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STRATEGIC AREAS |
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[10] Non-Volatile
Memory Technologies |
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(Chair, K.
Takasaki, Fujitsu Lab.) |
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"Non-volatile
Memories" session solicits all NV memory (Flash, FeRAM, EPROM, EEPROM,
Anti-fuse, MRAM & others) technology related papers. Topics relating
to NV devices include cell device physics & characterization, processing
& materials, tunnel dielectrics, ferroelectric materials, reliability,
failure analysis, quality assurance & testing, modeling & simulation,
integrated circuits, new concept technologies, and new applications &
systems (solid state disks, memory cards, programmable logic,-).
Invited speakers:
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"Floating
gate type nonvolatile memory reliability issues"
G. Tempel (Infineon, Germany) |
"Current
FeRAM technology developments and scaling towards 3-D capacitor cells"
D. Wouters (IMEC, Belgium) |
"32Mb Chain
FeRAM-An Overview"
D. Takashima (Toshiba, Japan) |
"Prospect
of Emerging Memories"
H. Jeong (Samsung, Korea) |
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[11] SiGe/III-V/III-N
Devices and Circuits for Wireless and Optical Communications |
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(Chair, T. Enoki,
NTT) |
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Compound-semiconductor
devices are playing important roles in wireless and optical communications
systems. Future communications systems definitely require devices and
circuits that dissipate lower energy, operate at higher bit rates or frequencies,
have lower noise, generate higher signal power, and are more compact.
This session covers advanced device and IC technologies that meet these
challenges through the use of SiGe, GaAs-based, InP-based, and N-based
materials (but not limited). Monolithic ICs or multi-chip modules integrating
optical and electrical devices will also be discussed. Papers demonstrating
breakthroughs and novel concepts, discussing on potentials and limitations,
and addressing issues in these technologies are strongly solicited for
this session.
Invited speakers:
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"High-Performance,
Low-Cost SiGe:C BiCMOS Technology"
B. Tillack (IHP, Germany) |
"High-speed
III-V HEMT and HBT devices and circuits for ETDM transmission beyond
80 Gbit/s"
R. Quay (Fraunhofer IAF, Germany) |
"GaN-based
microwave power devices: A survey on the activities in Europe"
J. Wuerfl (Ferdinand-Braun-Institut fuer Hoechstfreguenztechnik, Germany) |
"Development
of AlGaN/GaN power HFET for the application of an inverter circuit"
S. Yoshida (The Furukawa Electric, Japan) |
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[12] System-Level
Integration and Packaging Technologies |
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(Chair, K. Takahashi,
ASET) |
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The scope of this
subcommittee involves all features of advanced packaging technologies
and system-level integration technologies based on packaging technology.
Papers are solicited in, but not limited to, the following areas: (1)
Advanced packaging technologies including chip size package (CSP), wafer-level
package, stacked package, (2) Three-dimensional (3D) integration technology
including wafer stacking and chip stacking, (3) System integration technologies
including SiP (system-in-package), SoP (system-on-package), opto-electronics
integration and MEMS, (4) Design and CAD technologies for the advanced
packaging and system integration including interface design, EMI and EMC
management and ultra-high speed data transfer technologies, (5) Testing
technologies for the system integration including burn-in, known good
die (KDG) and design for test (DFT), (6) Modeling and simulation of thermal,
mechanical and electrical performance of advanced packaging and system
integration.
Invited speakers:
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"3D System
Integration by Chip-to-Wafer Stacking Technologies"
P. Ramm (Fraunhofer IZM, Germany) |
"AC Coupled
Interconnect for high density high bandwidth packaging"
P.D. Franzon (North Carolina State Univ., USA) |
"System
Packaging and Embedded WLP Technologies for Mobile Products"
T. Wakabayashi (Casio, Japan) |
"Design,
Manufacuturing and Infrastructure for All-in-One SiP Solution"
T. Fujitsu (J-SiP Walton, Japan) |
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[13] Organic
Semiconductor Devices and Materials |
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(Chair, M. Iwamoto,
Tokyo Institute of Technology) |
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Electronic and Optical
processes in organic materials and device application in the following
fields (but not limited): (1) Organic transistors, diodes and circuits
(2) Organic light emitting devices (3) Organic photodetectors and photovoltaic
devices (4) Chemical sensors and gas sensors (5) Fabrication and characterization
of organic thin films (6) Electrical and Optical properties of organic
thin film and materials (7) Organic-inorganic hybrid systems (8) Interfacial
phenomena, LC devices, etc.
Invited speakers:
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"Potential
Profile and Opto-Electronic Properties at Nano-interface of Conducting
Polymer and Metals"
K. Kaneto (Kyushu Institute of Technology, Japan) |
"Semiconductor
materials design for low-cost plastic thin film transistors"
B. Ong (Xerox, Canada) |
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[14] Micro-Nano
Electromechanical Devices for Bio- and Chemical Applications |
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(Chair, Y. Miyahara,
National Institute for Materials Science) |
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Micro/nano electromechanical
devices (M/NEMS) are now widely applied to biochemical, medical and environmental
fields and a new research field called μ-TAS or Lab. on a Chip is expanding
and being established. Fusion of microelectronic devices with materials
and methods in the chemical, biological, and mediacl fields is expected
to open up new scientific and business fields. Papers are solicited in
the following areas (but not limited): (1) Micro/nano electronic mechanical
system (M/NEMS) for RF, optical, power and others, (2) μ-TAS and Lab
on a chip, (3) Various Bio-chips for DNA, healthcare and proteins, (4)
Fabrication technologies and (5) New integrated micro/nano systems for
biochemical and medical applications.
Invited speakers:
|
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"Development
of an integrated a-Si:H photodiode detector and its evaluation for
chemical and biochemical microfluidic analysis"
T. Kamei (Univ. of California, USA) |
"DNA chips
and their medical applications"
P. Fortina (Thomas Jefferson Univ., USA) |
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