| Chair: |
M.
Koyanagi (Tohoku Univ.) |
| Vice-Chair: |
J.
Sone (NEC)
S. Takagi (Toshiba) |
| Secretary: |
H.
Kurino (Tohoku Univ.) |
 |
| Subcommittee
Members: |
| [1]
Advanced Silicon Circuits and Systems |
| Chair: |
T.
Kuroda (Keio Univ.) |
| Members: |
M.
Fujishima (Univ. of Tokyo)
H. Ishiguro (Toshiba)
S. Kawahito (Shizuoka Univ.)
H. Mizuno (Hitachi) |
|
T.
Mori (Fujitsu Labs.)
M. Takamiya (NEC)
H.-J. Yoo (KAIST) |
|
| [2]
Advanced Silicon Devices and Device Physics |
| Chair: |
T.
Mogami (NEC) |
| Members: |
C.H.
Diaz (TSMC)
T. Eimori (Mitsubishi Electric)
K. Goto (Fujitsu Labs.)
A. Hiroki (Kyoto Inst. of Technol.)
T.-Y. Huang (Natl. Chiao Tung Univ.) |
|
S.
Inaba (Toshiba)
T.-J. King (UCB)
M. Ogawa (Kobe Univ.)
K. Shibahara (Hiroshima Univ.)
N. Sugii (Hitachi) |
|
| [3]
Silicon Process / Materials Technologies |
| Chair: |
N.
Kobayashi (Selete) |
| Members: |
M.
Hori (Nagoya Univ.)
T. Kobayashi (Sony)
J. Koike (Tohoku Univ.)
H.-K. Kang (Samsung Electronics)
T.P. Ma (Yale Univ.) |
|
T.
Nakamura (Fujitsu Labs.)
M. Niwa (Matsushita Electric)
M. Okuyama (Osaka Univ.)
S. Saito (NEC)
Y. Tsunashima (Toshiba Semiconductor) |
|
| [4]
New Materials and Characterization |
| Chair: |
S.
Takagi (Toshiba) |
| Members: |
Y.
Awano (Fujitsu Labs.)
K. Kikuta (NEC)
L. Manchanda (Agere Systems)
S. Miyazaki (Hiroshima Univ.) |
|
J.
Murota (Tohoku Univ.)
A. Sakai (Nagoya Univ.)
A. Toriumi (Univ. of Tokyo) |
|
| [5]
Compound Semiconductor Materials and Devices |
| Chair: |
N.
Kobayashi (NTT) |
| Members: |
T.
Hashizume (Hokkaido Univ.)
Y. Horikoshi (Waseda Univ.)
J.T. Hsu (ITRI/OES)
M. Ikeda (Sony Shiraishi Semiconductor) |
|
K.
Kojima (Mitsubishi Electric)
H. Ohno (Tohoku Univ.)
T. Takahashi (Fujitsu Labs.) |
|
| [6]
Optoelectronic Devices and Photonic Crystal Devices |
| Chair: |
O.
Wada (Kobe Univ.) |
| Members: |
S.
Arahira (Oki Electric)
S. Lee (KIST)
S. Matsuo (NTT)
T. Mizumoto (Tokyo Inst. of Technol.)
T. Nishimura (Mitsubishi Electric) |
|
S.
Noda (Kyoto Univ.)
H. Shimizu (The Furukawa Electric)
N. Suzuki (Toshiba)
H. Yamada (NEC) |
|
| [7]
Novel Devices, Physics, and Fabrication |
| Chair: |
K.
Ishibashi (RIKEN) |
| Members: |
Y.
Homma (NTT)
P. Hadley (Delft Univ. of Technol.)
S.W. Hwang (Korea Univ.)
Y. Kuwahara (Osaka Univ.) |
|
K.
Matsumoto (AIST)
Y. Miyamoto (Tokyo Inst. of Technol.)
M. Tabe (Shizuoka Univ.)
J.-S. Tsai (NEC) |
|
| [8]
Quantum Nanostructure Devices and Physics |
| Chair: |
T.
Hirayama (NTT) |
| Members: |
H.
Akinaga (AIST)
D. G. Austing (NRC)
K. Hirakawa (Univ. of Tokyo)
J. Motohisa (Hokkaido Univ.)
R. Noetzel (Eindhoven Univ. of Tech.) |
|
Y.
Ohno (Tohoku Univ.)
P.V. Santos (Paul-Drude Institute)
M. Sugawara (Univ. of Tokyo)
A. Takeuchi (Waseda Univ.) |
|
| [9]
Silicon-on-Insulator Technologies |
| Chair: |
A.
Ogura (NEC) |
| Members: |
K.
Ino (Toshiba)
T. Ipposhi (Mitsubishi)
Y. Kado (NTT)
H. Kang (Samsung Electronics)
H. Matsuhashi (Oki Electric) |
|
M.A.
Mendicino (Motrola)
T. Nakai (Sumitomo Mitsubishi Silicon)
O. Nishio (Sharp)
M. Terauchi (Hiroshima City Univ.) |
|
| [10]
Non-Volatile Memory Technologies |
| Chair: |
K.
Takasaki (Fujitsu Labs.) |
| Members: |
G.
Fox (Ramtron)
J. Van Houdt (IMEC)
K. Kim (Samsung Electronics)
T. Kobayashi (Hitachi)
T. Nakamura (Rohm) |
|
K.
Saito (NEC)
Y. Shimada (Matsushita Electric)
H. Takada (Mitsubishi Electric)
K. Yoshikawa (Toshiba) |
|
| [11]
SiGe/III-V/III-N Devices and Circuits for Wireless and Optical Communications |
| Chair: |
T.
Enoki (NTT) |
| Members: |
Y.-J.
Chan (Natl. Central Univ.)
M. Kuzuhara (NEC)
M. Madihian (NEC Lab. America) |
|
K.
Morizuka (Toshiba Semiconductor)
Y. Tateno (Fujitsu Quantum Device)
K. Washio (Hitachi) |
|
| [12]
System-Level Integration and Packaging Technologies |
| Chair: |
K.
Takahashi (ASET) |
| Members: |
M.
Aoyagi (AIST)
H. Ezawa (Toshiba)
K. Fujimoto (Osaka Univ.)
M. Kada (Sharp)
M. Kimura (Mitsubishi Electric) |
|
K.
Masu (Tokyo Inst. of Technol.)
A. Nakamura (Hitachi)
T. Suga (Univ. of Tokyo)
M. Swaminathan (Georgia Inst. of Technol.) |
|
| [13]
Organic Semiconductor Devices and Materials |
| Chair: |
M.
Iwamoto (Tokyo Inst. of Technol.) |
| Members: |
C.
Adachi (Chitose Inst. of Sci & Technol.)
S.R. Forrest (Princeton Univ.)
T. Kamata (AIST)
K. Kudo (Chiba Univ.) |
|
Y.
Ohmori (Osaka Univ.)
A. Sugimura (Osaka Sangyo Univ.)
H. Toda (Okazaki Natl. Reserch Inst.) |
|
| [14]
Micro-Nano Electromechanical Devices for Bio-and Chemical Applications |
| Chair: |
Y.
Miyahara (NIMS) |
| Members: |
T.
Fujii (Univ. of Tokyo)
M. Kamahori (Hitachi)
A. Manz (Imperial College) |
|
M.
Sasaki (Tohoku Univ.)
K. Shimoide (AsahiKASEI)
H. Tabata (Osaka Univ.) |
|
| Persons
in charge |
| Online
paper submission: |
| |
M.
Sasaki (Tohoku Univ.)
K. Shibahara (Hiroshima Univ.) |
|
| Online
registration: |
| |
M.
Hiratani (Hitachi) |
