Y.
Aoyagi (Tokyo Inst. of Technol.)
M. Fukuma (NEC)
H. Hasegawa (Hokkaido Univ.)
T. Hattori (Sony)
M. Hirose (AIST)
Y. Horiike (Univ. of Tokyo)
A. Ibaraki (Sanyo)
F. Ichikawa (Oki Electric)
T. Ikoma (Hitotsubashi Univ.)
S. Ishihara (NTT)
T. Kamiya (Natl. Inst. for Academic Degrees)
M. Kanazawa (ASET)
A. Kitou (Sharp)
K. Maeguchi (Toshiba)
H. Matsunami (Kyoto Univ.)
A. Morino (Selete)
K. Natori (Univ. of Tsukuba)
T. Nishimura (Renesas)
T. Ohmi (Tohoku Univ.)
T.
Ohta (Tokyo Electron)
H. Sakaki (Univ. of Tokyo)
F. Sato (NHK)
Y. Shimanuki (Sumitomo Mitsubishi Silicon)
Y. Shiraki (Univ. of Tokyo)
T. Suga (Univ. of Tokyo)
K. Tada (Yokohama Natl. Univ.)
H. Takasu (Rohm)
E. Takeda (Hitachi)
K. Tanaka (AIST)
K. Taniguchi (Osaka Univ.)
Y. Todokoro (Matsushita Electric)
K. Tsubouchi (Tohoku Univ.)
T. Tsurushima (Kumamoto Technopolis Foundation)
J. Ueda (SIRIJ)
Y. Yasuda (Nagoya Univ.)
N. Yokoyama (Fujitsu Labs.)
H. Watanabe (NEC)
INTERNATIONAL
ADVISORY COMMITTEE
H.
Ahmed (Univ. of Cambridge)
G. Baccarani (Univ. of Bologna)
D. Bois (CNET)
C.Y. Chang (Natl. Chiao Tung Univ.)
B.Y.S. Chen (Inst. Microelec. Sci.)
C.H. Chung (Yonsei Univ.)
R.H. Dennard (IBM)
L. Esaki (Shibaura Inst. of Technol.)
J.S. Harris (Stanford Univ.)
S.J.
Hillenius (Bell Labs. Lucent Technol.)
Z.J. Li (Tsinghua Univ.)
S. Namba (Nagasaki Inst. of Applied Sci.)
Y. Nishi (Stanford Univ. )
K.H. Ploog (Paul-Drude-Inst.)
T. Sugano (Toyo Univ.)
K. Takahashi (Teikyo Univ. of Sci. & Technol.)
S. Tanaka (SRL)
A. Wieder (Siemens)
STEERING
COMMITTEE
Chair:
S.
Kawamura (AIST)
Vice-Chair:
K.
Masu (Tokyo Inst. of Technol.)
Members:
M.
Hiratani (Hitachi)
M. Hori (Nagoya Univ.)
S. Kimura (Hitachi)
M. Kubota (Sony)
B.
Mizuno (Ultimate Junction Technologies Inc.)
T. Nakanishi (Fujitsu)
K. Tsutsui (Tokyo Inst. of Technol.)
PROGRAM
COMMITTEE
Chair:
M.
Koyanagi (Tohoku Univ.)
Vice-Chair:
J.
Sone (NEC)
S.
Takagi (Toshiba, MIRAI-ASET)
Secretary:
H.
Kurino (Tohoku Univ.)
Subcommittee
Members:
[1] Advanced Silicon Circuits and Systems
Chair:
T.
Kuroda (Keio Univ.)
Members:
M.
Fujishima (Univ. of Tokyo)
H. Ishikuro (Toshiba)
S. Kawahito (Shizuoka Univ.)
H. Mizuno (Hitachi)
T.
Mori (Fujitsu Labs.)
M. Takamiya (NEC)
H.-J. Yoo (KAIST)
[2]
Advanced Silicon Devices and Device Physics
Chair:
T.
Mogami (NEC)
Members:
C.H.
Diaz (TSMC)
T. Eimori (Renesas)
K. Goto (Fujitsu Labs.)
A. Hiroki (Kyoto Inst. of Technol.)
T.-Y. Huang (Natl. Chiao Tung Univ.)
S.
Inaba (Toshiba)
T.-J. King (UCB)
M. Ogawa (Kobe Univ.)
K. Shibahara (Hiroshima Univ.)
N. Sugii (Hitachi)
[3]
Silicon Process / Materials Technologies
Chair:
N.
Kobayashi (Selete)
Members:
M.
Hori (Nagoya Univ.)
T. Kobayashi (Sony)
J. Koike (Tohoku Univ.)
H.-K. Kang (Samsung Electronics)
T.P. Ma (Yale Univ.)
T.
Nakamura (Fujitsu Labs.)
M. Niwa (Matsushita Electric)
M. Okuyama (Osaka Univ.)
S. Saito (NEC)
Y. Tsunashima (Toshiba Semiconductor)
[4]
New Materials and Characterization
Chair:
S.
Takagi (Toshiba, MIRAI-ASET)
Members:
Y.
Awano (Fujitsu Labs.)
K. Kikuta (NEC)
L. Manchanda (Agere Systems)
S. Miyazaki (Hiroshima Univ.)
J.
Murota (Tohoku Univ.)
A. Sakai (Nagoya Univ.)
A. Toriumi (Univ. of Tokyo)
[5]
Compound Semiconductor Materials and Devices
Chair:
N.
Kobayashi
(Univ. of Electro-Communications)
Members:
T.
Hashizume (Hokkaido Univ.)
Y. Horikoshi (Waseda Univ.)
J.T. Hsu (ITRI/OES)
M. Ikeda (Sony Shiroishi Semiconductor)
K.
Kojima (Mitsubishi Electric)
H. Ohno (Tohoku Univ.)
T. Takahashi (Fujitsu Labs.)
[6]
Optoelectronic Devices and Photonic Crystal Devices
Chair:
O.
Wada (Kobe Univ.)
Members:
S.
Arahira (Oki Electric)
S. Lee (KIST)
S. Matsuo (NTT)
T. Mizumoto (Tokyo Inst. of Technol.)
T. Nishimura (Mitsubishi Electric)
S.
Noda (Kyoto Univ.)
H. Shimizu (Furukawa Electric)
N. Suzuki (Toshiba)
H. Yamada (NEC)
[7]
Novel Devices, Physics, and Fabrication
Chair:
K.
Ishibashi (RIKEN)
Members:
Y.
Homma (NTT)
P. Hadley (Delft Univ. of Technol.)
S.W. Hwang (Korea Univ.)
Y. Kuwahara (Osaka Univ.)
K.
Matsumoto (Osaka Univ.)
Y. Miyamoto (Tokyo Inst. of Technol.)
M. Tabe (Shizuoka Univ.)
J.-S. Tsai (NEC)
[8]
Quantum Nanostructure Devices and Physics
Chair:
T.
Hirayama (NTT)
Members:
H.
Akinaga (AIST)
D. G. Austing (NRC)
K. Hirakawa (Univ. of Tokyo)
J. Motohisa (Hokkaido Univ.)
R. Noetzel (Eindhoven Univ. of Tech.)
Y.
Ohno(Tohoku Univ.)
P.V. Santos (Paul-Drude Inst.)
M. Sugawara (Univ. of Tokyo)
A. Takeuchi (Waseda Univ.)
[9]
Silicon-on-Insulator Technologies
Chair:
A.
Ogura (NEC)
Members:
K.
Ino (Toshiba)
T. Ipposhi (Renesas)
Y. Kado (NTT)
H. Kang (Samsung Electronics)
H. Matsuhashi (Oki Electric)
M.A.
Mendicino (Motrola)
T. Nakai (Sumitomo Mitsubishi Silicon)
O. Nishio (Sharp)
M. Terauchi (Hiroshima City Univ.)
[10]
Non-Volatile Memory Technologies
Chair:
K.
Takasaki (Fujitsu Labs.)
Members:
G.
Fox (Ramtron)
J. Van Houdt (IMEC)
K. Kim (Samsung Electronics)
T. Kobayashi (Hitachi)
T. Nakamura (Rohm)
K.
Saito(NEC)
Y. Shimada (Matsushita Electric)
H. Takada (Mitsubishi Electric)
K. Yoshikawa (Toshiba)
[11]
SiGe/III-V/III-N Devices and Circuits for Wireless and Optical Communications
Chair:
T.
Enoki (NTT)
Members:
Y.-J.
Chan (Natl. Central Univ.)
M. Kuzuhara (NEC)
M. Madihian (NEC Lab. America)
K.
Morizuka(Toshiba Semiconductor)
Y. Tateno (Fujitsu Quantum Device)
K. Washio (Hitachi)
[12]
System-Level Integration and Packaging Technologies
Chair:
K.
Takahashi (ASET)
Members:
M.
Aoyagi (AIST)
H. Ezawa (Toshiba)
K. Fujimoto (Osaka Univ.)
M. Kada (Sharp)
M.
Kimura (Renesas Technology)
K. Masu (Tokyo Inst. of Technol.)
T. Suga (Univ. of Tokyo)
M. Swaminathan (Georgia Inst. of Technol.)
[13]
Organic Semiconductor Devices and Materials
Chair:
M.
Iwamoto (Tokyo Inst. of Technol.)
Members:
C.
Adachi (Chitose Inst. of Sci & Technol.)
S.R. Forrest (Princeton Univ.)
T. Kamata (AIST)
K. Kudo (Chiba Univ.)
Y.
Ohmori (Osaka Univ.)
A. Sugimura (Osaka Sangyo Univ.)
H. Tada (Okazaki Natl. Reserch Inst.)
[14]
Micro-Nano Electromechanical Devices for Bio-and Chemical Applications
Chair:
Y.
Miyahara (NIMS)
Members:
T.
Fujii (Univ. of Tokyo)
M. Kamahori (Hitachi)
A. Manz (Imperial College)
M.
Sasaki(Tohoku Univ.)
K. Shimoide (AsahiKASEI)
H. Tabata (Osaka Univ.)
Persons
in charge
Online paper submission:
M.
Sasaki (Tohoku Univ.)
K.
Shibahara (Hiroshima Univ.)
Online
registration:
M.
Hiratani (Hitachi)
SECRETARIAT
c/o Inter Group Corp.
4-9-17, Akasaka, Minato-ku,
Tokyo 107-8486 Japan
TEL:+81-3-3479-5131
FAX:+81-3-3423-1601
E-mail: ssdm@intergroup.co.jp
Web Site: http://www.intergroup.co.jp/ssdm
