ADVANCE PROGRAM

RUMP SESSIONS - September 17 (Wednesday) 18:45-20:45
  Rump session 1 (Room A, FUJI, 42F)
  "Can channel material/structure engineering become a guiding principle for future CMOS device technology?"
  The simple device scaling rule has been facing to several physical and fundamental limitations, leading to severe trade-off relationships among device performance, short channel effects and power consumption. As one possible solution to avoid this difficulty, new channel structures different from conventional planar Si channel are currently stirring a strong interest. This channel engineering mainly includes two directions; one is new channel materials with high carrier mobility, such as strained-Si, SiGe and Ge, and the other is 3-dimensional channel structures to enhance gate control over channel potential, such as FinFET, double gate MOS, Gate-all-around (GAA) MOS and vertical MOS. However, a scenario for continuously improving the device characteristics under these many engineering options has not been clarified yet. Thus, it is a good timing to examine possibilities, realities and major roles of these non-classical MOSFETs for future technology nodes.
In this rump session, we would like to discuss following issues. (1) Can further and continuous improvements of CMOS characteristics be really achieved by channel material/structure engineering?
(2) What is a guiding principle for CMOS device technologies in the future nodes, still smaller size,channel materials, channel geometrical structures or anything else? (3) What are critical issues in the competition between classical vs. non-classical CMOS?
 
 

Organizer
S. Takagi
(Toshiba, MIRAI-ASET, Japan)

Panelists
T-J. King (UCB, USA)
T. Skotnicki (STMicro, France)
K. Rim (IBM, USA)
K. Ishimaru (Toshiba, Japan)
T. Takagi (Matsushita, Japan)
T. Sugii (Fujitsu, Japan)
 
FinFET, UTB SOI, Ge MOS
SON, GAA MOS, Si/SiGeC MOS
strained-Si/Strained-SOI CMOS
Advanced CMOS, Bulk CMOS
SiGe Analog Devices, SiGe/SiGeC HBT
From the viewpoint of ITRS
 
  Rump session 2 (Room B, TAKAO, 42F)
  "What paradigm can nanoelectronic devices bring about?"
  Nanotechnology is expected to be a key technology in the 21st century bringing innovations for materials and devices. What kind of innovations are expected in the electronic devices by reducing the device feature sizes to nanometer-scale or even controlling molecular and atomic structures? Are the nanoelectronic devices positioned as a post-Si CMOS in the miniaturization limit, or will they co-exist with Si-CMOS devices by realizing new functions which are hardly provided solely by present Si devices? What paradigm can the nanoelectronic devices bring about in the future information society? From those standpoints, we would like to discuss future prospect of the nanoelectronic devices in the rump session, mainly by focusing on carbon nanotube devices, molecular/atomic and organic electronic devices, spin-electronic devices, and ultra small-scaled Si devices.
 
 

Moderators
J. Sone (NEC, Japan)
Y. Wada (Waseda Univ., Japan)

Organizer
J. Sone(NEC, Japan)

 Panelists
H.-S. P. Wong (IBM, USA)
Y. Awano (Fujitsu, Japan)
K. Kudo (Chiba Univ., Japan)
M. Tanaka (Univ. of Tokyo, Japan)
T. Hiramoto (Univ. of Tokyo, Japan)
 
Carbon nanotube electronics
Carbon nanotube electronics
Organic semiconductor devices
Spin electronics
Nanostructured Si MOS
SHORT COURSES
  Two short courses will be held on September 19 (Friday) for young engineers and students. All lectures are given in Japanese. Please refer to the attached information for details.
SSDM 2003 INSTRUCTION for SPEAKERS
 

<Oral Presentation>
Presentation Time

 
Session Time
Presentation Time
Discussion
Plenary
45 min.
40 min.
5 min.
Invited
30 min.
25 min.
5 min.
Regular-1
20 min.
15 min.
5 min.
Regular-2
15 min.
12 min.
3 min.
Buzzer First: Warning, Second: End of the presentation time, Third: End of the discussion time.
 
  Audio-Visual Equipment
  The meeting room will contain the following audiovisual equipment:
  • Overhead projector
  • LCD data projector (PC is not provided)
  • Microphone
  • Projection laser pointer
It is strongly recommended that you use the Overhead projector for your presentation.
Authors wishing to present their paper using LCD projector are requested to bring overhead transparencies preparing for an unforeseen accident.
 
  <Poster Presentation>
Poster Sessions are scheduled as follows:
13:00-15:00 on Wednesday, September 17
Authors must remain in the vicinity of the bulletin board for the duration of the session to answer questions.
 
  900mm(W) x 2,100mm(H) poster board, a sign indicating your paper number and push pins will be provided at the poster room, OHGI, 4F. Presenters should display, on their poster, the paper title, authors and affiliation.
 
  Authors are requested to prepare their poster materials during:
9:00 to 12:00 of September 17.
Please put their poster materials off by:
17:00 on September 17.