Invited Speakers

Area 1 Advanced CMOS: Material Fundamentals, Process Science and Device Physics

  • Ultralow power CMOS technology and beyond von-Neumann computing [ TBC ]
    Suman Datta(Univ. of Notre Dame, USA)
  • Vertically Stacked Gate-All-Around Si Nanowire Transistors [ TBC ]
    Hans Mertens(IMEC, Belgium)
  • Material Scaling of Atomic Layer Etching [ TBC ]
    Kazuo Nojiri(Lam Research Co., Ltd., Japan)
  • Negative-capacitance field-effect transistor (NC-FET) with a ferroelectric material as an insulator [ TBC ]
    Hiroyuki Ota (AIST, Japan)
  • Atomic sites of dopants in Si visualized by X-ray photoelectron Holography [ TBC ]
    Kazuo Tsutsui(Tokyo Tech, Japan)

Area 2 Advanced / Emerging Memories and New Applications

  • [ TBC ]
    Takahiro Hanyu(Tohoku Univ., Japan)
  • [ TBC ]
    ChiaHua Ho(Winbond Electronics Corp., China)
  • Breakthrough of Selector Technology [ TBC ]
    Soo Gil Kim(SK Hynix Inc., Korea)
  • Progress of Single-Gate Vertical Channel (SGVC) 3D NAND Technology
    Hang-Ting Lue(Macronix International Co., Ltd., Taiwan)
  • Neuromorphic Computing with memristive devices and arrays
    Jianhua (Joshua) Yang(Univ. of Massachusetts, USA)
  • Investigation of ferroelectric switching mechanism in Si doped HfO2 for FeRAM applications [ TBC ]
    Hyangkeun Yoo(SK Hynix Inc., Korea)

Area 3 Interconnection / 3D Integrations / MEMS

  • [ TBC ]
    Subramanian S. Iyer(UCLA, USA)
  • [ TBC ]
    Akitsu Shigeto(NIMS, Japan)
  • Fully Aligned Via Integration
    Devika Sil(IBM Research, USA)
  • Conductor trends for future interconnects
    Zsolt Tokei(IMEC, Belgium)
  • [ TBC ]
    Hiroshi Toshiyoshi(Univ. of Tokyo, Japan)

Area 4 Power / High-speed Devices, and Materials

  • Advances in InP Double Heterojunction Bipolar Transistors
    Colombo Bolognesi(ETH Zurich, Switzerland)
  • Evolution and prospects of gallium oxide-based materials and power devices
    Shizuo Fujita(Kyoto Univ., Japan)
  • State of the art and Future Prospective of Si-IGBT Technologies
    Thomas Laska (Infineon Technologies AG, Germany)
  • [ TBC ]
    Munetaka Noguchi(Mitsubishi Electric Corp., Japan)
  • [ TBC ]
    Tohru Oka(Toyoda Gosei Co., Ltd., Japan)
  • [ TBC ]
    Tomas Palacios(MIT, USA)
  • Diamond Electronics: Past Perspectives and Future Prospects
    Hitoshi Umezawa (AIST, Japan)

Area 5 Advanced Photonics: Devices, Integration and Related Technology

  • 32-Gbit/s Heterogeneously Integrated Mach-Zehnder Modulator with 250-μm-long III-V/Si MOS-capacitor Phase Shifter
    Tatsurou Hiraki(NTT Corp., Japan)
  • High Power Slow Light VCSEL amprifier for LiDAR application
    Fumio Koyama(Tokyo Tech, Japan)
  • High performance III-nitide photodetectors using nanoplasmonics effects
    Dabing Li(Chinese Academy of Sci., China)
  • Artificial neural networks based on Mach-Zehnder interferometers in a Si PIC
    Yichen Shen(MIT, USA)
  • [ TBC ]
    Wang Qijie(Nanyang Inst. of Tech., Singapore)

Area 6 Photovoltaic / Energy Harvesting / Battery-related Technology

  • Plasmoic nanostructures in colloidal quantum on solar cells
    Michael Adachi(Simon Fraser Univ., Canada)
  • [ TBC ]
    Tim Holme(Quantumscape Corp., USA)
  • [ TBC ]
    Ji-Young Lee(Merck Performance Materials Ltd, Korea)
  • [ TBC ]
    Yang Longkai(LeadAdvanced PV, China)
  • [ TBC ]
    Naoaki Yabuuchi(Yokohama National Univ., Japan)

Area 7 Organic / Molecular / Bio-electronics

  • [ TBC ]
    Junji Adachi(Kyulux, Inc., Japan)
  • Research on Organic Resistive Memory Devices: Integration and Mechanism
    Takhee Lee(Seoul National Univ., Korea)
  • [ TBC ]
    Takamichi Nakamoto(Tokyo Tech, Japan)
  • [ TBC ]
    Ada Poon(Stanford Univ., USA)
  • [ TBC ]
    Ayato Tagawa(Sysmex Corp., Japan)
  • [ TBC ]
    Damien Thompson (Univ. of Limerick , Ireland)

Area 8 Low Dimensional Devices and Materials

  • Indistinguishable quantum-dot single-photon-sources on a reconfigurable photonic integrated circuit
    Anthony Bennett(Cardiff Univ., UK)
  • Group IV nanowires as model systems to explore phase behaviour, nucleation and interface dynamics in nanoscale systems
    Stephan Hofmann(Cambridge Univ,, UK)
  • Theoretical study of graphene and 2D materials
    Tony Low(Minnesota Univ., USA)
  • 2D materials and their heterostructure with organic materials
    Xinran Wang(Nanjing Univ., China)
  • Using graphene as an epitaxial substrate and transparent electrode for GaN/AlGaN UV LEDs
    Helge Weman(NTNU/CrayoNano, Norway)

Area 9 Novel Functional / Quantum / Spintronic Devices and Materials

  • [ TBC ]
    Andrew Dzurak(The Univ. of New South Wales, Australia)
  • Neuromorphic Computing based on spintronics
    Tetsuo Endoh(Tohoku Univ., Japan)
  • Skyrmions in magntic multilayers
    Wanjun Jiang(Tsinghua Univ., China)
  • Spintronics in 2D materials
    Roland Kawakami(The Ohio State Univ., USA)
  • Novel device concepts based on quantum matter heterostructures [ TBC ]
    Jochen Mannhart(Max Planck Inst. for Solid State Research, Germany)
  • Electric field control of ferromagnetic thin films
    Motohiro Suzuki (RIKEN, Japan)
  • Neuromorphic Machine learning
    Diederik Verkest(IMEC, Belgium)
  • [ TBC ]
    Hiroaki Yoda(Toshiba Corp., Japan)

Area 10 Thin Film Electronics: Oxide, Non-single Crystalline and Novel Process

  • Solution-processed organic-inorganic perovskite thin film transistors
    Toshinori Matsushima(Kyushu Univ., Japan)
  • Growth and physical properties of group IV compound thin films
    Osamu Nakatsuka(Nagoya Univ., Japan)
  • Development of spinel-type ZnGa2O4 thin-film transistor and its application to flexible devices
    Makoto Nakazumi(Nikon Corp., Japan)
  • [ TBC ]
    Eric Pop(Stanford Univ., USA)

Area 11 Advanced Materials Synthesis and Advanced Characterization

  • New insights into doping behaviour of catalyst-free (In,Ga)As-based nanowires
    Gregor Koblmueller(Technical Univ. of Munich, Germany)
  • High-quality diamond epitaxial layer growth and electron devices application
    Yasuo Koide(NIMS, Japan)
  • Photoemission Study of Gate Dielectrics and Stack Interfaces
    Seiichi Miyazaki(Nagoya Univ., Japan)
  • Growth and characterization of bulk GaN substrate vy HVPE [ TBC ]
    Ke Xu(Chinese Academy of Sci., China)

Special Advanced Circuits/Systems Interacting with Innovative Devices & Materials

Topical session 1: Ion/photon coupled systems

Overview: As solid state devices and materials are utilized more than ever in bio, battery, optical sensing/communication applications and so on, ion and/or photon coupled system integrations are increasing their importance. In order to maximize the functionalities of those ion/photon coupled systems, circuit/system and device engineers must understand fundamentals of ionic and photonic behaviors and utilize them into circuit/system design. In the topical session 1, Professor Kazuaki Sawada of Toyohashi Univ. of Technology and Professor Jun Ohta of NAIST will talk about fundamentals of ion and photon coupled systems, and advanced researchers will present their latest works in this field.

  • Ion Sensor Array For Electronics – Biological Matter Interface
    Kazuaki Sawada(Toyohashi Tech, Japan)
  • Implantable optoelectronic devices for biomedical applications
    Jun Ohta(NAIST, Japan)
  • Applications of chemical imaging sensor in the field of electrochemistry
    Ko-ichiro Miyamoto(Tohoku Univ., Japan)
  • An Enegry-Autonomous Biomedical IoT Platform Using Human Computer Ion-Coupled Energy Interaction for Next-Generation Diabetes Care
    Kiichi Niitsu(Nagoya Univ., Japan)
  • Advanced LiDAR SoC for Automobile Range-Imaging
    Akihide Sai(Toshiba Corp., Japan)
  • Advanced Micro-Electrode Arrays and Image Sensors for Biomeical and Life science Applications
    George Yuan(Hong Kong Univ. of Sci. & Tech., Hong Kong)

Topical session 2: Innovative device based circuits

Overview: Researches on new materials and device structures such as Tunnel FET, Negative Capacitance FET, Graphene, CNT, 2D FETs, Memristors, and so on aiming for further supply voltage reduction and adding more functionalities to LSI have been very active. In order to practically apply these innovative devices into actual circuits and systems, research activities to directly link between processes, materials, devices researches and circuits and systems design are vital. In the topical session 2, Professor Vijaykrishnan Narayanan of the Pennsylvania State Univ. will talk about the whole picture in this research field, and the world delegates will talk about researches on modeling, benchmarking, novel circuits and system architectures leveraging the advanced characteristics of new materials and devices and demonstrate latest system level integrations.

  • Technology-Driven Emerging Computational Models and Systems
    Vijaykrishnan Narayanan(The Pennsylvania State Univ., USA)
  • Emerging Memory Based Circuits for Beyond von Neumann Applications: Nonvolatile-Logic and Computing-in-Memory [ TBC ]
    Meng-Fan Chang(National Tsing Hua Univ., Taiwan)
  • Extrememly low power LSI using C-Axis Aligned Crystalline Indium–Gallium–Zinc Oxide FET
    Tatsuya Onuki(Semiconductor Energy Lab., Japan)
  • An ultra-low-power high-speed cache memory comprising hybrid TFET-FinFET SRAM Cells [ TBC ]
    Massoud Pedram(Univ. of Southern California, USA)
  • CNT based high performance CMOS and optoelectronic devices and integrated systems
    Lian-Mao Peng(Peking Univ., China)
  • Evaluation of Negative Capacitance Ferroelectric Field-Effect Transistors For Low Power Circuit Applications
    Gong Xiao(National Univ. of Singapore, Singapore)