Committees

Organizing Committee

Chair
H. Ohno (Tohoku Univ.)
Vice-chair
A. Toriumi (Univ. of Tokyo)
Members
  • Y. Arakawa (Univ. of Tokyo)
  • T. Asano (Kyushu Univ.)
  • S. Chung (National Chiao Tung Univ.)
  • S. Fujita (Kyoto Univ.)
  • Y. H. Jeong (POSTECH)
  • T. Hiramoto (Univ. of Tokyo)
  • D. Hisamoto (Hitachi, Ltd.)
  • T. Kanayama (AIST)
  • E. K. Kim (Hanyang Univ.)
  • M. Konagai (Tokyo City Univ.)
  • K. Masu (Tokyo Tech)
  • K. Matsumoto (Osaka Univ.)
  • Y. Miyamoto (Tokyo Tech)
  • S. Miyazaki (Nagoya Univ.)
  • T. Nakamura (Rohm Co., Ltd.)
  • M. Namba (NHK)
  • H. Oohashi (NTT Electronics Corp.)
  • T. Oomori (Mitsubishi Electric Corp.)
  • H. Shibata (Toshiba Corp.)
  • T. Shibata (JSAP)
  • T. Sogawa (NTT Basic Res. Labs.)
  • T. Someya (Univ. of Tokyo)
  • T. Tatsumi (Sony Semiconductor Solutions Corp.)
  • H. Ueda (Tokyo Electron Ltd.)
  • H. Umimoto (Panasonic Corp.)
  • E. Yano (Fujitsu Labs. Ltd.)
  • N. Yokoyama (AIST)
  • S. Yorozu (NEC Corp.)

International Advisory Committee

Members (*Tentative)
  • C. Y. Chang (NCTU)
  • G. Declerck (IMEC)
  • L. Esaki (Yokohama College of Pharmacy)
  • J. S. Harris (Stanford Univ.)
  • K. v. Klitzing (Max Planck Inst.)
  • D. L. Kwong (IME)
  • M. Nakamura (JST)
  • Y. Nishi (Stanford Univ.)
  • K. H. Ploog (Paul Drude Inst.)
  • T. Sugano (Univ. of Tokyo)
  • K. Takahashi (Tokyo Tech)

Steering Committee

Chair
T. Endoh (Tohoku Univ.)
Vice-Chair
T. Kondo (Univ. of Tokyo)
Secretary
  • M. Muraguchi (Tohoku Univ.)
  • H. Sato (Tohoku Univ.)
Members
  • T. Fukushima (Tohoku Univ.)
  • S. Iwamoto (Univ. of Tokyo)
  • H. Kino (Tohoku Univ.)
  • M. Kobayashi (Univ. of Tokyo)
  • M. Kohda (Tohoku Univ.)
  • S. Kuboya (Tohoku Univ.)
  • R. Kuroda (Tohoku Univ.)
  • K. Nagashio (Univ. of Tokyo)
  • Y. Narita (Yamagata Univ.)
  • M. Natsui (Tohoku Univ.)
  • M. Oogane (Tohoku Univ.)
  • T. Takahashi (JEOL Ltd.)
  • M. Takenaka (Univ. of Tokyo)
  • H. Yamamoto (Tohoku Univ.)

Program Committee

Chair
K. Shiraishi (Nagoya Univ.)
Vice-Chair
  • M. Koyama (Toshiba Corp.)
  • J. Nitta (Tohoku Univ.)
  • H. T. Lue (Macronix International Co., Ltd.)
  • F. Boeuf (STMicroelectronics)
Secretary
  • K. Kita (Univ. of Tokyo)
  • K. Kakushima (Tokyo Tech)
  • K. Miyaji (Shinshu Univ.)
JJAP Special Issues Editors
  • H. Kageshima (Shimane Univ.)
  • T. Hosoi (Osaka Univ.)
  • S. Iwamoto (Univ. of Tokyo)

Area 1 Advanced LSI Processing & Materials Science

Chair
O. Nakatsuka (Nagoya Univ.)
Vice-chair
  • H. Morioka (Socionext Inc.)
  • L. Grenouillet (CEA-Leti)
Member
  • H. Arimura (IMEC)
  • H. Itokawa (Toshiba Corp.)
  • M. Kadoshima (Renesas Electronics Corp.)
  • K. Kakushima (Tokyo Tech)
  • M. H. Liao (National Taiwan Univ. )
  • G. Nakamura (Tokyo Electron Ltd.)
  • T. Nakayama (Chiba Univ.)
  • H. Nohira (Tokyo City Univ.)
  • H. Ota (AIST)
  • K. Yamamoto (Kyushu Univ.)
  • S. Yoshida (Sony Semiconductor Solutions Corp.)

Area 2 Interconnect Technologies, MEMS, and Reliability

Chair
M. Fujino (Univ. of Tokyo)
Vice-chair
  • M. Mariappan (Tohoku Univ.)
  • K. N. Chen (NCTU)
Member
  • T. Fukushima (Tohoku Univ.)
  • S. Itabashi (NTT Advanced Technology Corp.)
  • H. Kanaya (Kyushu Univ.)
  • M. Kodera (Toshiba Corp.)
  • T. Minari (NIMS)
  • S. Ogawa (AIST)
  • M. Sato (Fujitsu Labs. Ltd.)
  • H. Seki (Toray Research Center, Inc.)
  • Y. Shiratori (NTT Device Tech. Labs.)
  • J. M. Song (National Chung Hsing Univ.)
  • M. B. Takeyama (Kitami Inst. of Tech.)
  • M. Ueki (Sony Semiconductor Manufacturing Corp.)

Area 3 CMOS Devices / Device Physics

Chair
N. Sugii (Hitachi, Ltd.)
Vice-chair
  • Y. Fukuzaki (Sony Corp.)
  • F. L. Yang (Academia Sinica)
Member
  • S. Cho (Gachon Univ.)
  • R. Huang (Peking Univ.)
  • M. Kobayashi (Univ. of Tokyo)
  • K. Maekawa (Renesas Electronics Corp.)
  • T. Matsukawa (AIST)
  • T. Miyata (Toshiba Corp.)
  • N. Mori (Osaka Univ.)
  • N. Planes (STMicroelectronics)
  • P. Su (NCTU)
  • K. Sukegawa (Socionext Inc.)
  • G. Tsutsui (IBM)
  • O. Weber (CEA-Leti)

Area 4 Advanced Memory Technology

Chair
T. Sakamoto (NEC Corp.)
Vice-chair
  • K. Yamamoto (Toshiba Corp.)
  • M. J. Tsai (Industrial Technology Reserch Institute)
Member
  • Y. Hikosaka (Fujitsu Semiconductor Ltd.)
  • S. Jeon (Korea Univ.)
  • Y. Jono (Micron Memory Jpan Inc.)
  • K. Kinoshita (Tottori Univ.)
  • F. M. Lee (Macronix International Co., Ltd.)
  • H. J. Lim (Samsung Electronics Co., Ltd.)
  • H. Sato (Tohoku Univ.)
  • W. T. Sun (eMemory Technology Inc.)
  • N. Takaura (Hitachi, Ltd.)
  • Z. Wei (Panasonic Corp.)

Area 5 Advanced Circuits and Systems

Chair
I. Akita (Toyohashi Tech)
Vice-chair
  • R. Kuroda (Tohoku Univ.)
  • H. Lin (National Chung Hsing Univ.)
Member
  • J. Akita (Kanazawa Univ.)
  • J. C. Guo (NCTU)
  • K. Johguchi (Shinshu Univ.)
  • D. Kanemoto (Univ. of Yamanashi)
  • H. Majima (Toshiba Corp.)
  • T. Minotani (NTT Telecon Co., Ltd.)
  • K. Takeuchi (Chuo Univ.)
  • T. Yoshida (Hiroshima Univ.)

Area 6 Compound Semiconductor Electron Devices & Related Technologies

Chair
T. Suzuki (JAIST)
Vice-chair
  • K. Tsuda (Toshiba Corp.)
  • E. Y. Chang (NCTU)
Member
  • H. Y. Cha (Hongik Univ.)
  • T. Hashizume (Hokkaido Univ.)
  • M. Kuzuhara (Univ. of Fukui)
  • E. Lind (Lund Univ.)
  • K. Maezawa (Univ. of Toyama)
  • T. Oishi (Saga Univ. )
  • S. Ozaki (Fujitsu Labs. Ltd.)
  • S. Sasa (Osaka Inst. of Tech.)
  • N. Shigekawa (Osaka City Univ.)
  • J. Suda (Kyoto Univ.)
  • S. Suzuki (Tokyo Tech)
  • T. Tanaka (Panasonic Corp.)
  • A. Wakejima (Nagoya Inst. of Tech.)

Area 7 Photonic Devices and Related Technologies

Chair
H. Isshiki (Univ. of Electro-Communications)
Vice-chair
  • N. Nishiyama (Tokyo Tech)
  • F. Boeuf (STMicroelectronics)
Member
  • S. Akiyama (Fujitsu Labs. Ltd.)
  • T. Amano (AIST)
  • S. Kuboya (Tohoku Univ.)
  • K. Ohira (Toshiba Corp.)
  • N. Ozaki (Wakayama Univ.)
  • S. Saito (Univ. of Southampton)
  • T. Shimizu (PETRA)
  • M. Shirao (Mitubishi Electric)
  • T. Tawara (NTT Basic Res. Labs.)
  • L. Vivien (Univ. of Paris Sud)
  • X. Wang (Peking Univ.)

Area 8 Advanced Material Synthesis and Crystal Growth Technology

Chair
T. Nagata (NIMS)
Vice-chair
  • A. Kikuchi (Sophia Univ.)
  • W. W. Wu (NCTU)
Member
  • O. Bierwagen (Paul-Drude-Institut)
  • A. Heya (Univ. of Hyogo)
  • T. Hoshi (NTT Device Tech. Labs.)
  • T. Iwai (Fujitsu Labs. Ltd.)
  • T. Sadoh (Kyushu Univ.)
  • H. Tatsuoka (Shizuoka Univ.)
  • T. Yamaguchi (Kogakuin Univ.)

Area 9 Physics and Applications of Novel Functional Devices and Materials

Chair
T. Tanamoto (Toshiba Corp.)
Vice-chair
  • A. Oiwa (Osaka Univ.)
  • P. W. Li (NCTU)
Member
  • P. E. Gaillardon (Univ. of Utah)
  • Y. Kaneko (Panasonic Corp.)
  • T. Kodera (Tokyo Tech)
  • G. Liang (NUS)
  • T. Miyazawa (Fujitsu Labs. Ltd.)
  • R. Moriya (Univ. of Tokyo)
  • Y. Nishi (Toshiba Corp.)
  • T. Ota (NTT Basic Res. Labs.)
  • R. M. Stevenson (Toshiba Res. Europe)
  • K. Terabe (NIMS)
  • H. Xu (Peking Univ.)

Area 10 Organic Materials Science, Device Physics, Applications and Printed Technologies

Chair
T. Shimada (Hokkaido Univ.)
Vice-chair
  • H. Okada (Univ. of Toyama)
  • C. Nijhuis (NUS)
Member
  • H. Endoh (NEC Corp.)
  • A. Fujii (Osaka Univ.)
  • T. Hayashi (NTT Basic Res. Labs.)
  • K. Ishida (Kobe Univ.)
  • T. Kaji (Tokyo Univ. of Agri. & Tech.)
  • T. Matsushima (Kyushu Univ.)
  • S. Nakajima (Japan Aviation Electronics Ind., Ltd.)
  • M. Nakamura (NAIST)
  • K. Shinbo (Niigata Univ.)
  • K. Takei (Osaka Prefecture Univ.)
  • M. Yoshida (AIST)
  • H. Yoshida (Chiba Univ.)

Area 11 Sensors and Materials for Biology, Chemistry and Medicine

Chair
T. Sakata (Univ. of Tokyo)
Vice-chair
  • T. Tanaka (Tohoku Univ.)
  • C. H. Liu (National Tsing Hua Univ.)
Member
  • H. M. Chen (NCTU)
  • S. Machida (Hitachi, Ltd.)
  • M. Sasaki (Toyota Technological Inst.)
  • H. Tanaka (Panasonic Corp.)
  • R. Tero (Toyohashi Tech)
  • T. Tokuda (NAIST)

Area 12 Spintronics Materials and Devices

Chair
J. Nitta (Tohoku Univ.)
Vice-chair
  • T. Ono (Kyoto Univ.)
  • B. G. Park (KAIST)
Member
  • T. Fukumura (Tohoku Univ.)
  • T. Kondo (Toshiba Corp.)
  • M. Mizuguchi (Tohoku Univ.)
  • S. Ohya (Univ. of Tokyo)
  • H. Shimizu (Tokyo Univ. of Agri. & Tech.)
  • C. Song (Tsinghua Univ.)
  • A. Tulapurkar (IIT Bombay)
  • T. Uemura (Hokkaido Univ.)
  • H. Yang (NUS)

Area 13 Applications of Nanotubes, Nanowires, and Graphene and Related 2D Materials

Chair
K. Kawaguchi (Fujitsu Labs. Ltd.)
Vice-chair
  • K. Nagashio (Univ. of Tokyo)
  • C. W. Chen (National Taiwan Univ. )
Member
  • T. Arie (Osaka Prefecture Univ.)
  • M. Arita (Univ. of Tokyo)
  • N. Fukata (NIMS)
  • S. Hara (Hokkaido Univ.)
  • T. Kato (Tohoku Univ.)
  • T. Kawai (NEC Corp.)
  • S. Lehmann (Lund Univ.)
  • K. Maehashi (Tokyo Univ. of Agri. & Tech.)
  • H. Miyazaki (Toshiba Corp.)
  • T. Takenobu (Nagoya Univ.)
  • T. Yanagida (Kyushu Univ.)
  • G. Zhang (NTT Basic Res. Labs.)

Area 14 Power Devices and Materials

Chair
D. Hisamoto (Hitachi, Ltd.)
Vice-chair
  • S. Harada (Nagoya Univ.)
  • C. F. Huang (National Tsing Hua Univ.)
Member
  • G. Feng (EpiWorld International Co., Ltd.)
  • H. Fujiwara (Toyota Motor Corp.)
  • Y. Hijikata (Saitama Univ.)
  • T. Ide (AIST)
  • N. Iwamuro (Univ. of Tsukuba)
  • H. Kim (Hongik Univ.)
  • K. Kobayashi (Toshiba Corp.)
  • T. Makino (AIST)
  • S. Matsumoto (Kyushu Inst. of Tech.)
  • T. Oshima (Saga Univ. )
  • T. Uesugi (Toyota Central R&D Labs. Inc.)

Area 15 Photovoltaic Materials and Devices

Chair
K. Ohdaira (JAIST)
Vice-chair
  • M. Ikegami (Toin Univ. of Yokohama)
  • L. S. Hong (National Taiwan Univ. of Sci. & Tech., Presently at Taipei Economic and Cultural Representative Office in Japan)
Member
  • H. Araki (National Institute of Technology, Nagaoka College)
  • M. Chikamatsu (AIST)
  • C. W. Chu (Academia Sinica)
  • T. Hoshii (Tokyo Tech)
  • Y. Kurokawa (Nagoya Univ.)
  • T. Negami (Panasonic Corp.)
  • H. Suzuki (Univ. of Miyazaki)
  • T. Taima (Kanazawa Univ.)
  • T. Tayagaki (AIST)
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