Committees

Organizing Committee

Chair
T. Hashizume (Hokkaido Univ.)
Vice-chair
S. Takagi (Univ. of Tokyo)
Members
  • Y. Arakawa (Univ. of Tokyo)
  • T. Asano (Kyushu Univ.)
  • S. Chung (National Chiao Tung Univ.)
  • T. Endoh (Tohoku Univ.)
  • S. Fujita (Kyoto Univ.)
  • H. Hidaka (Renesas Electronics Corp.)
  • T. Hiramoto (Univ. of Tokyo)
  • D. Hisamoto (Hitachi, Ltd.)
  • M. Izawa (Hitachi High-Tech Corp.)
  • T. Kanayama (AIST)
  • M. Katayama (MIRISE Technologies Corp.)
  • D. Kikuta (TOYOTA CENTRAL R&D LABS., INC.)
  • E. K. Kim (Hanyang Univ.)
  • M. Kimura (Murata Manufacturing Co., Ltd.)
  • K. Masu (Tokyo Tech)
  • K. Matsumoto (Osaka Univ.)
  • N. Matsuzawa (Panasonic Corp.)
  • Y. Miyamoto (Tokyo Tech)
  • S. Miyazaki (Nagoya Univ.)
  • K. Nakahara (Rohm Co., Ltd.)
  • M. Namba (NHK STRL)
  • T. Satake (Mitsubishi Electric Corp.)
  • S. Sato (Fujitsu Ltd.)
  • M. Shirane (NEC Corp.)
  • H. Sobukawa (EBARA Corp.)
  • T. Sogawa (NTT Basic Res. Labs.)
  • T. Someya (Univ. of Tokyo)
  • T. Tatsumi (Sony Semiconductor Solutions Corp.)
  • H. Ueda (Tokyo Electron Technology Solutions Ltd.)
  • J. Wada (Kioxia Corp.)

International Advisory Committee

Members
  • G. Declerck (Board Member, imec International / Professor Emeritus, KULeuven)
  • L. Esaki (President, Yokohama University of Pharmacy / Chairman, The Science and Technology Promotion Foundation of Ibaraki)
  • D. L. Kwong (Executive Director, Institute for Infocomm Research / Executive Director, Institute of Microelectronics / Agency for Science, Technology and Research)
  • Y. Nishi (Professor Emeritus, Stanford University / Project Professor, Kyoto Institute of Technology)
  • K. H. Ploog (Director (retired), Paul Drude Institute for Solid State Electronics)
  • T. Sugano (Professor Emeritus, The University of Tokyo)
  • K. Takahashi (Professor Emeritus, Tokyo Institute of Technology)

Steering Committee

Chair
J. Motohisa (Hokkaido Univ.)
Vice-Chair
M. Sugiyama (Univ. of Tokyo)
Secretary
  • M. Akazawa (Hokkaido Univ.)
  • K. Tomioka (Hokkaido Univ.)
Members
  • M. Akai (Osaka Univ. / Hokkaido Univ.)
  • M. Arita (Hokkaido Univ.)
  • S. Hiura (Hokkaido Univ.)
  • M. Ikebe (Hokkaido Univ.)
  • R. Kaji (Hokkaido Univ.)
  • H. Ohta (Hokkaido Univ.)
  • H. Sasakura (Hokkaido Univ.)
  • T. Sato (Hokkaido Univ.)
  • M. Takenaka (Univ. of Tokyo)
  • Y. Toda (Hokkaido Univ.)
  • T. Uemura (Hokkaido Univ.)
  • M. Yamanouchi (Hokkaido Univ.)

Program Committee

Chair
Y. Miyamoto (Tokyo Tech)
Vice-Chair
  • H. Wakabayashi (Tokyo Tech)
  • F. Boeuf (STMicroelectronics)
Secretary
  • N. Nishiyama (Tokyo Tech)
  • T. Hosoi (Kwansei Gakuin Univ.)
  • K. Nishiguchi (NTT Basic Res. Labs.)
JJAP Special Issues Editors
  • O. Nakatsuka (Nagoya Univ.)
  • M. Takenaka (Univ. of Tokyo)
  • K. Nagashio (Univ. of Tokyo)

Area 1

Chair
M. Kobayashi (Univ. of Tokyo)
Vice-Chair
  • H. Oishi (Sony Semiconductor Solutions Corp.)
  • F.L. Yang (Academia Sinica)
Members
  • F. Andrieu (CEA-Leti)
  • S. Cho (Gachon Univ.)
  • K. Goto (TSMC)
  • R. Huang (Peking Univ.)
  • H. Itokawa (KIOXIA Corp.)
  • H. Kageshima (Shimane Univ.)
  • C. Lee (Zhejiang Univ.)
  • M.H. Liao (National Taiwan Univ.)
  • T. Matsukawa (AIST)
  • N. Mise (Hitachi High-Tech Corp.)
  • S. Mochizuki (IBM Research)
  • G. Nakamura (Tokyo Electron Ltd. )
  • N. Planes (STMICROELECTRONICS)
  • S. Souma (Kobe Univ.)
  • P. Su (NYCU)
  • S. N. Takeda (NAIST)
  • A. Veloso (IMEC)
  • Y. Wang (Renesas Electronics Corp.)
  • K. Yamamoto (Kyushu Univ.)

Area 2

Chair
N. Takaura (Hitachi, Ltd.)
Vice-Chair
  • N. Banno (NanoBridge Semiconductor, Inc.)
  • S. Jeon (KAIST)
Members
  • L. Grenouillet (CEA-LETI)
  • A. Himeno (Panasonic Corp.)
  • Y. Jono (Micron Japan, Ltd.)
  • K. Kinoshita (Tokyo Univ. of Science)
  • M.H. Lee (Macronix International Co., Ltd.)
  • H. Lim (Samsung Electronics)
  • H. Mulaosmanovic (NaMLab gGmbH)
  • H. Naganuma (Tohoku Univ.)
  • M. Nakabayashi (FUJITSU SEMICONDUCTOR MEMORY SOLUTION Ltd.)
  • H. Sasaki (MIRISE Technologies Corp.)
  • W.T. Sun (eMemory Technology Inc.)
  • K. Yamamoto (KIOXIA Corp.)

Area 3

Chair
K. Shiojima (Univ. of Fukui)
Vice-Chair
  • T. Saito (Osaka Prefecture Univ.)
  • M.B. Takeyama (Kitami Inst. of Tech.)
  • J.D. Messemaeker (IMEC)
Members
  • X. Gu (Western Digital)
  • Y. Kashiwagi (Osaka Research Inst. of Industrial Sci. and Tech.)
  • T. Minari (NIMS)
  • T. Nogami (IBM Research)
  • J.M. Song (National Chung Hsing Univ.)
  • M. Ueki (Sony Semiconductor Manufacturing Corp.)
  • A. Yamaguchi (Univ. of Hyogo)

Area 4

Chair
K. Tsuda (Toshiba Infrastructure Systems & Solutions Corp.)
Vice-Chair
  • H. Watanabe (Osaka Univ.)
  • S. Suzuki (Tokyo Tech)
  • K.Y. Lee (National Taiwan Univ.)
Members
  • C. Bolognesi (ETH Zurich)
  • H. Kawarada (Waseda Univ.)
  • H. Kim (Hongik Univ.)
  • H. Matsuzaki (NTT Device Tech. Labs.)
  • S. Ohmagari (AIST)
  • H. Okumura (Tsukuba Univ.)
  • Y. Onozawa (Fuji Electric Co., Ltd.)
  • S. Ozaki (Fujitsu Labs. Ltd.)
  • M. Sometani (AIST)
  • T. Sugiyama (Toshiba Electronic Device & Storage Corp.)
  • T. Suzuki (JAIST)
  • T. Terashima (Mitsubishi Electric Corporation Power Device Works)
  • N. Watanabe (Hitachi, Ltd.)
  • M. Yanagihara (Rohm Co., Ltd.)
  • Y. Yao (Japan Fine Ceramics Center)
  • Q. Zhou (Univ. of Electronic Sci. and Tech.)

Area 5

Chair
F. Boeuf (STMicroelectronics)
Vice-Chair
  • S. Iwamoto (Univ. of Tokyo)
  • N. Ozaki (Wakayama Univ.)
Members
  • M.D. Birowosuto (Nanyang Technological Univ.)
  • T. Hamaguchi (Sony Corp.)
  • K. Hassan (CEA-LETI)
  • T. Katsuyama (Sumitomo Electric Industries, Ltd.)
  • U. Koch (ETH Zurich)
  • Y.J. Lu (Academia Sinica)
  • H. Ono (PETRA)
  • M. Shirao (Mitsubishi Electric Corp.)
  • K. Suzuki (AIST)
  • X. Xu (NTT Corp.)

Area 6

Chair
Y. Kurokawa (Nagoya Univ.)
Vice-Chair
  • T. Tayagaki (AIST)
  • C.W. Chu (Academia Sinica)
Members
  • H. Araki (National Inst. of Tech., Nagaoka College)
  • M. Chikamatsu (AIST)
  • K. Gotoh (Nagoya Univ.)
  • L. Hong(TECRO)
  • T. Horiuchi (Ricoh)
  • T. Hoshii (Tokyo Tech)
  • S. Ishizuka (AIST)
  • S. Kato (Nagoya Inst. of Tech.)
  • A. Limmanee (NSTDA)
  • M. Matsui (Kobe Univ.)
  • M. Motoyama (Nagoya Univ.)
  • N. Shibayama (Toin Univ. of Yokohama)
  • H. Shinohara (Waseda Univ.)
  • S. Shiraki (Nippon Inst. of Tech.)
  • H. Suzuki (Univ. of Miyazaki)
  • M. Taguchi (Panasonic Corp.)
  • T. Taima (Kanazawa Univ.)
  • S. Yamada (Tohoku Univ.)

Area 7

Chair
H. Okada (Univ. of Toyama)
Vice-Chair
  • M. Nakamura (NAIST)
  • R. Tero (Toyohashi Univ. of Technology)
  • H.M. Chen (NYCU)
Members
  • M. Ando (Hitachi, Ltd.)
  • N. Clement (LIMMS-CNRS / Univ. of Tokyo)
  • H. Endoh (NEC Corp.)
  • A. Fuijii (Osaka Univ.)
  • K. Hashimotodani (Panasonic Corp.)
  • A. Hirano (Tohoku Univ.)
  • H. Iino (Tokyo Tech)
  • S. Kumagai (Meijo Univ.)
  • C.H. Liu (National Tsing-Hua Univ.)
  • T. Matsushima (Kyushu Univ.)
  • S. Nakajima (Japan Aviation Electronics Ind., Ltd.)
  • C. Nijihuis (National Univ. of Singapore)
  • T. Sakata (Univ. of Tokyo)
  • T. Shimada (Hokkaido Univ.)
  • K. Takei (Osaka Prefecture Univ.)
  • T. Tanaka (Tohoku Univ.)
  • T. Tokuda (Tokyo Tech)

Area 8

Chair
S. Hara (Hokkaido Univ.)
Vice-Chair
  • S. Nakaharai (NIMS)
  • Y.F. Lin (National Chung Hsing Univ.)
Members
  • T. Arie (Osaka Prefecture Univ. )
  • T. Irisawa (AIST)
  • F. Ishikawa (Ehime Univ.)
  • M. Jo (Inst. of Physical and Chemical Research)
  • R. Kaji (Hokkaido Univ.)
  • T. Kato (Tohoku Univ.)
  • T. Kawanago (Tokyo Tech)
  • K. Nagashio (Univ. of Tokyo)
  • T. Sasaki (National Inst. for Quantum and Radiological Sci. and Tech.)
  • T. Takenobu (Nagoya Univ.)
  • S. Wang (NTT Basic Research Labs)
  • T. Yanagida (Univ. of Tokyo)

Area 9

Chair
K. Terabe (NIMS)
Vice-Chair
  • H. Yuasa (Kyushu Univ.)
  • P.W. Li (NYCU)
Members
  • K. Aoshima (NHK STRL)
  • M. Ishida (NEC Corp.)
  • Y. Kaneko (Panasonic Corp.)
  • K.J. Kim (KAIST)
  • T. Kodera (Tokyo Tech)
  • Y. Matsuzaki (AIST)
  • T. Miyazawa (Fujitsu Labs. Ltd.)
  • K. Morita (Chiba Univ.)
  • K. Nemoto (NII)
  • Y. Nishi (Toshiba Corp.)
  • S. Ohya (Univ. of Tokyo)
  • T. Ono (Kyoto Univ.)
  • K. Ota (KIOXIA Corp.)
  • H. Shimizu (Tokyo Univ. of Agriculture and Tech.)
  • H. Yang (National Univ. of Singapore)

Area 10

Chair
M. Furuta (Kochi Univ. of Tech.)
Vice-Chair
  • W. Yeh (Shimane Univ.)
  • S. Kuroki (Hiroshima Univ.)
  • S.H.K. Park (KAIST)
Members
  • J.P. Bermundo (NAIST)
  • K. Hayashi (Kobe Steel Ltd.)
  • S. Higashi (Hiroshima Univ.)
  • K. Ide (Tokyo Tech)
  • H. Kakiuchi (Osaka Univ.)
  • T. Kawaharamura (Kochi Univ. of Tech.)
  • J. Koyama (Semiconductor Energy Laboratory Co., Ltd. )
  • C. Liu (Sun Yat-sen Univ.)
  • H. Nishinaka (Kyoto Inst. of Tech.)
  • K. Takechi (Tianma Japan)
  • T. Tezuka (KIOXIA Corp.)
  • K. Toko (Univ. of Tsukuba)
  • S.M. Yoon (Kyung Hee Univ.)
  • H.W. Zan (NYCU)

Area 11

Chair
H. Tatsuoka (Shizuoka Univ.)
Vice-Chair
  • T. Sadoh (Kyushu Univ.)
  • T. Hoshi (NTT Device Tech. Labs.)
  • Y.L. Chueh (National Tsing-Hua Univ.)
Members
  • A. Heya (Univ. of Hyogo)
  • A. Kikuchi (Sophia Univ.)
  • S. Ogawa (TORAY Research Center,Inc.)
  • Y. Shimura (Shizuoka Univ.)
  • Y. Tominaga (Hiroshima Univ.)
  • K. Watanabe (Shinshu Univ.)
  • W.W. Wu (NYCU)
  • J. Yamaguchi (Fujitsu Labs. Ltd.)
  • T. Yamaguchi (Kogakuin Univ.)

Area 12

Chair
K. Johguchi (Shinshu Univ.)
Vice-Chair
  • D. Kanemoto (Osaka Univ.)
  • T. Yoshida (Hiroshima Univ.)
  • H. Lin (National Chung Hsing Univ.)
Members
  • J.C. Guo (NYCU)
  • Y. Ma (Tohoku Univ.)
  • H. Majima (Toshima Electronic Devices & Storage Corp.)
  • T. Minotani (NTT Device Tech. Labs.)
  • N. Miura (Osaka Univ.)
  • K. Miyaji (Shinshu Univ.)
  • K. Niitsu (Nagoya Univ.)
  • Y. Ogasawara (AIST)
  • K. Takeuchi (Univ. of Tokyo)
  • K. Yasutomi (Shizuoka Univ.)
  • J. Yoo (National Univ. of Singapore)