Committees

Organizing Committee

Chair
H. Amano (Nagoya Univ.)
Vice-chair
A. Kurobe (Toshiba Corp.)
Members
  • Y. Arakawa (Univ. of Tokyo)
  • T. Asano (Kyushu Univ.)
  • S. Chung (National Chiao Tung Univ.)
  • T. Endoh (Tohoku Univ.)
  • S. Fujita (Kyoto Univ.)
  • K. Hashimoto (Toshiba Memory Corp.)
  • H. Hidaka (Renesas Electronics Corp.)
  • T. Hiramoto (Univ. of Tokyo)
  • D. Hisamoto (Hitachi, Ltd.)
  • M. Izawa (Hitachi High-Technologies Corp.)
  • T. Kanayama (AIST)
  • M. Katayama (DENSO Corp.)
  • T. Kato (Fujitsu Laboratories Ltd.)
  • S. Kawaji (TOYOTA CENTRAL R&D LABS., INC.)
  • E. K. Kim (Hanyang Univ.)
  • M. Kimura (Murata Manufacturing Co., Ltd.)
  • M. Konagai (Tokyo City Univ.)
  • K. Masu (Tokyo Tech)
  • K. Matsumoto (Osaka Univ.)
  • Y. Miyamoto (Tokyo Tech)
  • S. Miyazaki (Nagoya Univ.)
  • K. Nakahara (Rohm Co., Ltd.)
  • M. Namba (NHK)
  • T. Oomori (Mitsubishi Electric Corp.)
  • M. Shirane (NEC Corp.)
  • H. Sobukawa (EBARA Corp.)
  • T. Sogawa (NTT Basic Res. Labs.)
  • T. Someya (Univ. of Tokyo)
  • T. Tanaka (Panasonic Corp.)
  • T. Tatsumi (Sony Semiconductor Solutions Corp.)
  • H. Ueda (Tokyo Electron Technology Solutions Ltd.)
  • H. Watanabe (HAMAMATSU PHOTONICS K.K.)

International Advisory Committee

Members
  • C. Y. Chang (National Endowed Chair Professor, Taiwan / President Emeritus, National Chiao Tung University, Taiwan / National Academy of Engineering, USA)
  • G. Declerck (Board Member imec International / Professor Emeritus KULeuven)
  • L. Esaki (President, Yokohama University of Pharmacy / Chairman, The Science and Technology Promotion Foundation of Ibaraki)
  • K. v. Klitzing (Prof. Dr., Max-Planck-Institut FKF)
  • D. L. Kwong (Executive Director, Institute for Infocomm Research / Executive Director, Institute of Microelectronics / Agency for Science, Technology and Research)
  • Y. Nishi (Professor Emeritus, Stanford University)
  • K. H. Ploog (Director (retired), Paul Drude Institute for Solid State Electronics)
  • T. Sugano (Professor Emeritus, The University of Tokyo)
  • K. Takahashi (Professor Emeritus, Tokyo Institute of Technology)

Steering Committee

Chair
J. Suda (Nagoya Univ.)
Vice-Chair
H. Mizuta (JAIST)
Secretary
  • K. Makihara (Nagoya Univ.)
  • M. Sakashita (Nagoya Univ.)
Members
  • C. Y. Chang (TSMC)
  • M. Deki (Nagoya Univ.)
  • M. Ezaki (Toshiba Corp.)
  • M. Horita (Nagoya Univ.)
  • D. Imai (Meijyo Univ.)
  • S. H. Kim (KAIST)
  • A. Kojima (Toshiba Corp.)
  • J. Kojima (DENSO Corp.)
  • H. Kondo (Nagoya Univ.)
  • M. Kushimoto (Nagoya Univ.)
  • K. Kutsuki (TOYOTA CENTRAL R&D LABS., INC.)
  • R. Miyagawa (Nagoya Inst. of Tech.)
  • A. Ohta (Nagoya Univ.)
  • S. Shibayama (Nagoya Univ.)
  • Y. Shimura (Shizuoka Univ.)
  • T. Takahashi (JEOL Ltd.)
  • W. Takeuchi (Aichi Inst. of Tech.)
  • H. Tanaka (Nagoya Univ.)
  • N. Taoka (Nagoya Univ.)
  • T. Tsutsumi (Nagoya Univ.)
  • R. Zhang (Zhejiang Univ.)

Program Committee

Chair
H. Fujioka (Univ. of Tokyo)
Vice-Chair
  • K. Uchida (Univ. of Tokyo)
  • F. Boeuf (STMicroelectronics)
Secretary
  • K. Toko (Univ. of Tsukuba)
  • K. Nishiguchi (NTT Basic Res. Labs.)
  • K. Kakushima (Tokyo Tech)
JJAP Special Issues Editors
  • H. Yaguchi (Saitama Univ.)
  • M. Takenaka (Univ. of Tokyo)
  • T. Hosoi (Osaka Univ.)

Area 1 Advanced CMOS: Material Fundamentals, Process Science and Device Physics

Chair
H. Morioka (Socionext Inc.)
Vice-Chair
  • M. Kobayashi (Univ. of Tokyo)
  • O. Nakatsuka (Nagoya Univ.)
  • F. L. Yang (Academia Sinica)
Member
  • H. Arimura (IMEC)
  • S. Cho (Gachon Univ.)
  • R. Huang (Peking Univ.)
  • H. Itokawa (Toshiba Memory Corp.)
  • M. Kadoshima (Renesas Electronics Corp.)
  • H. Kageshima (Shimane Univ.)
  • Y. Kamakura (Osaka Inst. of Tech.)
  • C. Lee (Zhejiang Univ.)
  • M. H. Liao (National Taiwan Univ.)
  • T. Matsukawa (AIST)
  • N. Mise (Hitachi High-Technologies Corp.)
  • G. Nakamura (Tokyo Electron Ltd.)
  • H. Oishi (Sony Semiconductor Solutions Corp.)
  • N. Planes (STMicroelectronics)
  • P. Su (NCTU)
  • S. Takeda (NAIST)
  • O. Weber (CEA-Leti)
  • K. Yamamoto (Kyushu Univ.)

Area 2 Advanced / Emerging Memories and New Applications

Chair
K. Yamamoto (Toshiba Memory Corp.)
Vice-Chair
  • K. Kinoshita (Tokyo Univ. of Science)
  • S. Jeon (KAIST)
Member
  • L. Grenouillet (CEA-Leti)
  • Y. Hikosaka (Fujitsu Semiconductor Ltd.)
  • A. Himeno (Panasonic Corp.)
  • Y. Jono (Micron Memory Japan, G.K)
  • I. Kataeva (DENSO Corp.)
  • M. H. Lee (Macronix International Co., Ltd.)
  • H. J. Lim (Samsung Electronics Co., Ltd.)
  • H. Sato (Tohoku Univ.)
  • T. Sakamoto (NEC Corp.)
  • W. T. Sun (eMemory Technology Inc.)
  • N. Takaura (Hitachi, Ltd.)

Area 3 Interconnect / 3D Integrations / MEMS

Chair
M. B. Takeyama (Kitami Inst. of Tech.)
Vice-Chair
  • M. Mariappan (Tohoku Univ.)
  • K. Shiojima (Univ. of Fukui)
  • J. M. Song (National Chung Hsing Univ.)
Member
  • J. De Messemaeker (IMEC)
  • A. Isobayashi (Toshiba Corp.)
  • H. Kitada (Fujitsu Labs. Ltd.)
  • M. Kodera (Moses Lake Industries, Inc.)
  • T. Minari (NIMS)
  • T. Nogami (Principal Research Staff Member, IBM Research)
  • Y. Orii (NAGASE & CO., LTD.)
  • M. Ueki (Sony Semiconductor Manufacturing Corp.)

Area 4 Power Devices / High-speed Devices, and Materials

Chair
D. Hisamoto (Hitachi, Ltd.)
Vice-Chair
  • N. Iwamuro (Univ. of Tsukuba)
  • K. Tsuda (Toshiba Infrastructure Systems & Solutions Corp.)
  • M. Wang (Peking Univ.)
Member
  • C. R. Bolognesi (ETH Zurich)
  • H. Y. Cha (Hongik Univ.)
  • H. Fujiwara (Toyota Motor Corp.)
  • S. Harada (Nagoya Univ.)
  • K. Hirama (NTT Basic Res. Labs.)
  • K. Kakushima (Tokyo Tech)
  • K. Lee (National Taiwan Univ.)
  • T. Matsudai (Toshiba Electronic Devices & Storage Corp.)
  • S. Ohmagari (AIST)
  • T. Oshima (FLOSFIA INC.)
  • S. Ozaki (Fujitsu Labs. Ltd.)
  • M. Sometani (AIST)
  • S. Suzuki (Tokyo Tech)
  • T. Suzuki (JAIST)
  • T. Terashima (Mitsubishi Electric Corp.)
  • M. Yanagihara (Panasonic Corp.)

Area 5 Photonics: Devices, Integration and Related Technology

Chair
N. Nishiyama (Tokyo Tech)
Vice-Chair
  • T. Tawara (NTT Basic Res. Labs.)
  • F. Boeuf (STMicroelectronics)
Member
  • M. D. Birowosuto (Nanyang Technological Univ.)
  • G. Cong (AIST)
  • K. Hassan (Leti)
  • A. Hayakawa (Fujitsu Labs. Ltd.)
  • K. Kitamura (Kyoto Inst. of Tech.)
  • S. Kuboya (Mie Univ.)
  • D. Okamoto (PETRA)
  • N. Ozaki (Wakayama Univ.)
  • M. Shirao (Mitsubishi Electric Corp.)
  • L. Vivien (Univ. of Paris Sud)
  • M. Watanabe (Sumitomo Electric Industries, Ltd.)

Area 6 Photovoltaic / Energy Harvesting / Battery-related Technology

Chair
M. Ikegami (Toin Univ. of Yokohama)
Vice-Chair
  • Y. Kurokawa (Nagoya Univ.)
  • L. S. Hong (TECRO)
Member
  • H. Araki (National Institute of Technology, Nagaoka College)
  • M. Chikamatsu (AIST)
  • C. W. Chu (Academia Sinica)
  • K. Dokko (Yokohama National Univ.)
  • T. Horiuchi (Ricoh Co., Ltd.)
  • T. Hoshii (Tokyo Tech)
  • T. Kato (SHOWA SHELL SEKIYU K.K.)
  • A. Limmanee (NSTDA)
  • M. Motoyama (Nagoya Univ.)
  • K. Nakada (Tokyo Tech)
  • H. Shinohara (CEREBA)
  • S. Shiraki (Nippon Inst. of Tech.)
  • H. Suzuki (Univ. of Miyazaki)
  • T. Taima (Kanazawa Univ.)
  • T. Tayagaki (AIST)

Area 7 Organic / Molecular / Bio-electronics

Chair
T. Tanaka (Tohoku Univ.)
Vice-Chair
  • H. Okada (Univ. of Toyama)
  • T. Shimada (Hokkaido Univ.)
  • C. H. Liu (National Tsing Hua Univ.)
Member
  • M. Ando (Hitachi, Ltd.)
  • H. M. Chen (NCTU)
  • N. Clement (IIS/CNRS Univ. of Tokyo)
  • H. Endoh (NEC Corp.)
  • A. Fujii (Osaka Univ.)
  • A. Hirano (Tohoku Univ.)
  • Y. Kashimura (NTT Basic Res. Labs.)
  • S. Kumagai (Meijo Univ.)
  • T. Matsushima (Kyushu Univ.)
  • S. Nakajima (Japan Aviation Electronics Ind., Ltd.)
  • M. Nakamura (NAIST)
  • C. A. Nijhuis (NUS)
  • T. Sakata (Univ. of Tokyo)
  • K. Takei (Osaka Prefecture Univ.)
  • H. Tanaka (Panasonic Corp.)
  • R. Tero (Toyohashi Tech)
  • T. Tokuda (Tokyo Tech)

Area 8 Low Dimensional Devices and Materials

Chair
K. Nagashio (Univ. of Tokyo)
Vice-Chair
  • S. Hara (Hokkaido Univ.)
  • H. Tan (Australian National Univ.)
Member
  • T. Arie (Osaka Prefecture Univ.)
  • F. Ishikawa (Ehime Univ.)
  • R. Kaji (Hokkaido Univ.)
  • T. Kato (Tohoku Univ.)
  • K. Kawaguchi (Fujitsu Labs. Ltd.)
  • T. Kawanago (Tokyo Tech)
  • T. Mano (NIMS)
  • S. Nakaharai (NIMS)
  • M. Takamura (NTT Basic Res. Labs.)
  • T. Takenobu (Nagoya Univ.)
  • T. Yanagida (Kyushu Univ.)

Area 9 Novel Functional / Quantum / Spintronic Devices and Materials

Chair
A. Oiwa (Osaka Univ.)
Vice-Chair
  • T. Ono (Kyoto Univ.)
  • K. Terabe (NIMS)
  • P. W. Li (NCTU)
Member
  • K. Aoshima (Japan Broadcasting Corp.)
  • M. Ishida (NEC Corp.)
  • Y. Kaneko (Panasonic Corp.)
  • S. Kawabata (AIST)
  • T. Kodera (Tokyo Tech)
  • T. Miyazawa (Fujitsu Labs. Ltd.)
  • K. Nemoto (NII)
  • Y. Nishi (Toshiba Corp.)
  • J. Nitta (Tohoku Univ.)
  • S. Ohya (Univ. of Tokyo)
  • K. Ota (Toshiba Memory Corp.)
  • B. G. Park (KAIST)
  • H. Sanada (NTT Basic Res. Labs.)
  • H. Shimizu (Tokyo Univ. of Agri. & Tech.)
  • H. Yang (NUS)
  • H. Yuasa (Kyushu Univ.)

Area 10 Thin Film Electronics: Oxide, Non-single Crystalline and Novel Process

Chair
S. Higashi (Hiroshima Univ.)
Vice-Chair
  • M. Furuta (Kochi Univ. of Tech.)
  • S. H. K. Park (KAIST)
Member
  • K. Hayashi (Kobe Steel, Ltd.)
  • H. Ikenoue (Kyushu Univ.)
  • N. Itagaki (Kyushu Univ.)
  • H. Kakiuchi (Osaka Univ.)
  • T. Kamiya (Tokyo Tech)
  • K. Koga (Kyushu Univ.)
  • J. Koyama (Semiconductor Energy Laboratory Co.,LTD.)
  • S. Kuroki (Hiroshima Univ.)
  • P. T. Liu (NCTU)
  • H. Odaka (AGC Inc.)
  • K. Takechi (Tianma Japan, Ltd.)
  • T. Tezuka (Toshiba Memory Corp.)
  • K. Toko (Univ. of Tsukuba)
  • W. Yeh (Shimane Univ.)

Area 11 Advanced Materials Synthesis, Crystal Growth and Characterization

Chair
A. Kikuchi (Sophia Univ.)
Vice-Chair
  • H. Tatsuoka (Shizuoka Univ.)
  • W. W. Wu (NCTU)
Member
  • O. Bierwagen (Paul-Drude-Institut)
  • A. Heya (Univ. of Hyogo)
  • T. Hoshi (NTT Device Tech. Labs.)
  • S. Ogawa (Toray Research Center, Inc.)
  • T. Sadoh (Kyushu Univ.)
  • Y. Tominaga (Hiroshima Univ.)
  • K. Watanabe (Tohoku Univ.)
  • J. Yamaguchi (Fujitsu Labs. Ltd.)
  • T. Yamaguchi (Kogakuin Univ.)

Special Advanced Circuits/Systems Interacting with Innovative Devices & Materials

Chair
R. Kuroda (Tohoku Univ.)
Vice-Chair
  • K. Johguchi (Shinshu Univ.)
  • H. Majima (Toshiba Electronic Devices & Storage Corp.)
  • H. Lin (National Chung Hsing Univ.)
Member
  • J. C. Guo (NCTU)
  • D. Kanemoto (Osaka Univ.)
  • T. Minotani (NTT Device Tech. Labs.)
  • K. Niitsu (Nagoya Univ.)
  • Y. Ogasahara (AIST)
  • K. Takeuchi (Chuo Univ.)
  • T. Yoshida (Hiroshima Univ.)
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