Committees

Organizing Committee

Chair

T. Kanayama (AIST)

Vice-Chair

H. Ohno (Tohoku Univ.)

Members

• Y. Arakawa (Univ. of Tokyo)
• T. Asano (Kyushu Univ.)
• S. Chung (National Chiao Tung Univ.)
• S. Fujita (Kyoto Univ.)
• Y. H. Jeong (POSTECH)
• T. Hiramoto (Univ. of Tokyo)
• D. Hisamoto (Hitachi, Ltd.)
• H. Ito (Tokyo Electron Ltd.)
• E. K. Kim (Hanyang Univ.)
• M. Konagai (Tokyo City Univ.)
• M. Koyanagi (Tohoku Univ.)
• K. Masu (Tokyo Tech)
• K. Matsumoto (Osaka Univ.)
• Y. Miyamoto (Tokyo Tech)
• S. Miyazaki (Nagoya Univ.)
• N. Nagashima (Sony Corp.)
• T. Nakamura (Rohm Co., Ltd.)
• M. Namba (NHK)
• H. Oohashi (NTT Electronics Corp.)
• T. Oomori (Mitsubishi Electric Corp.)
• H. Shibata (Toshiba Corp.)
• T. Shibata (JSAP)
• T. Sogawa (NTT Basic Res. Labs.)
• T. Someya (Univ. of Tokyo)
• A. Toriumi (Univ. of Tokyo)
• H. Umimoto (Panasonic Corp.)
• E. Yano (Fujitsu Labs. Ltd.)
• N. Yokoyama (AIST)
• S. Yorozu (NEC Corp.)

International Advisory Committee

Members（*Tentative）

• C. Y. Chang (NCTU)
• G. Declerck (IMEC)
• L. Esaki (Yokohama College of Pharmacy)
• J. S. Harris (Stanford Univ.(Max Planck Inst.)
• D. L. Kwong (IME)
• M. Nakamura (JST)
• Y. Nishi (Stanford Univ.)
• K. H. Ploog (Paul Drude Inst.)
• T. Sugano (Univ. of Tokyo)
• K. Takahashi (Tokyo Tech)

Steering Committee

Chair

M. Masahara (AIST)

Vice-Chair

T. Endoh (Tohoku Univ.)

Secretary

K. Endo (AIST)

Members

• T. Matsukawa (AIST)
• S. Migita (AIST)
• W. Mizubayashi (AIST)
• T. Mori (AIST)
• Y. Morita (AIST)
• M. Muraguchi (Tohoku Univ.)
• T. Nagata (NIMS)
• M. Natsui (Tohoku Univ.)
• D. Okamoto (Univ. of Tsukuba)
• H. Ota (AIST)
• H. Sato (Tohoku Univ.)
• T. Suemasu (Univ. of Tsukuba)
• K. Takahashi (JEOL Ltd.)
• Y. Yamashita (NIMS)

Program Committee

Chair

T. Hiramoto (Univ. of Tokyo)

Vice-Chair

• K. Shiraishi (Nagoya Univ.)
• T. Sogawa (NTT Basic Res. Labs.)
• J. Ohta (NAIST)
• F. Boeuf (STMicroelectronics)

Secretary

• K. Miyaji (Shinshu Univ.)
• T. Kawaharamura (Kochi Univ. of Tech)
• K. Kita (Univ. of Tokyo)

JJAP Special Issues Editors

• S. Iwamoto (Univ. of Tokyo)
• H. Kageshima (Shimane Univ.)
• K. Kita (Univ. of Tokyo)

Area 1 Advanced LSI Processing & Materials Science

Chair

S. Migita (AIST)

Vice-Chair

• O. Nakatsuka (Nagoya Univ.)
• L. Grenouillet (CEA-Leti)

Member

• H. Itokawa (Toshiba Corp.)
• K. Kakushima (Tokyo Tech)
• H. Morioka (Socionext Inc.)
• G. Nakamura (Tokyo Electron Ltd.)
• T. Nakayama (Chiba Univ.)
• H. Nohira (Tokyo City Univ.)
• T. Yamaguchi (Renesas Electronics Corp.)
• K. Yamamoto (Kyushu Univ.)
• S. Yoshida (Sony Corp.)

Area 2 Interconnect Technologies and 3D Integration / Sensor / MEMS Integration / Materials and Characterization

Chair

N. Sugiyama (NIMS)

Vice-Chair

• M. Fujino (Univ. of Tokyo)
• K. N. Chen (NCTU)

Member

• S. Itabashi (NTT Advanced Technology Corp.)
• H. Kanaya (Kyushu Univ.)
• M. Kodera (Toshiba Corp.)
• M. Mariappan (Tohoku Univ.)
• T. Minari (NIMS)
• S. Ogawa (AIST)
• M. Sato (Fujitsu Labs. Ltd.)
• Y. Shiratori (NTT Device Tech. Labs.)
• J. M. Song (National Chung Hsing Univ.)
• M. B. Takeyama (Kitami Inst. of Tech.)
• M. Ueki (Sony Semiconductor Manufacturing Corp.)

Area 3 CMOS Devices / Device Physics

Chair

N. Sugii (Hitachi, Ltd.)

Vice-Chair

• Y. Fukuzaki (Sony Corp.)
• F. L. Yang (Academia Sinica)

Member

• S. Cho (Gachon Univ.)
• M. Hane (Renesas Electronics Corp.)
• R. Huang (Peking Univ.)
• M. Kobayashi (Univ. of Tokyo)
• K. Maekawa (Renesas Electronics Corp.)
• T. Matsukawa (AIST)
• T. Miyata (Toshiba Corp.)
• N. Mori (Osaka Univ.)
• N. Planes (STMicroelectronics)
• P. Su (NCTU)
• K. Sukegawa (Socionext Inc.)
• G. Tsutsui (IBM)
• O. Weber (CEA-Leti)

Area 4 Advanced Memory Technology

Chair

K. Hamada (Micron Memory Japan Inc.)

Vice-Chair

• T. Sakamoto (NEC Corp.)
• M. J. Tsai (Industrial Tech. Res. Inst.)

Member

• Y. Hikosaka (Fujitsu Semiconductor Ltd.)
• H. Hwang (POSTECH)
• K. Ito (Tohoku Univ.)
• K. Kinoshita (Tottori Univ.)
• M. H. Lee (Macronix International Co., Ltd.)
• H. J. Lim (Samsung Electronics Co., Ltd.)
• W. T. Sun (eMemory Technology Inc.)
• N. Takaura (Hitachi, Ltd.)
• Z. Wei (Panasonic Corp.)
• K. Yamamoto (Toshiba Corp.)

Area 5 Advanced Circuits and Systems

Chair

H. Takao (Kagawa Univ.)

Vice-Chair

• I. Akita (Toyohashi Tech)
• H. Lin (National Chung Hsing Univ.)

Member

• J. Akita (Kanazawa Univ.)
• J. C. Guo (NCTU)
• K. Johguchi (Shinshu Univ.)
• D. Kanemoto (Univ. of Yamanashi)
• R. Kuroda (Tohoku Univ.)
• H. Majima (Toshiba Corp.)
• T. Minotani (NTT Telecon Co., Ltd.)
• K. Takeuchi (Chuo Univ.)

Area 6 Compound Semiconductor Electron Devices & Related Technologies

Chair

T. Suzuki (JAIST)

Vice-Chair

• K. Tsuda (Toshiba Corp.)
• E. Y. Chang (NCTU)

Member

• H. Y. Cha (Hongik Univ.)
• T. Hashizume (Hokkaido Univ.)
• M. Kuzuhara (Univ. of Fukui)
• E. Lind (Lund Univ.)
• K. Maezawa (Univ. of Toyama)
• T. Oishi (Saga Univ. )
• S. Ozaki (Fujitsu Labs. Ltd.)
• S. Sasa (Osaka Inst. of Tech.)
• N. Shigekawa (Osaka City Univ.)
• J. Suda (Kyoto Univ.)
• S. Suzuki (Tokyo Tech)
• T. Tanaka (Panasonic Corp.)
• A. Wakejima (Nagoya Inst. of Tech.)

Area 7 Photonic Devices and Related Technologies

Chair

H. Isshiki (Univ. of Electro-Communications)

Vice-Chair

• N. Nishiyama (Tokyo Tech)
• F. Boeuf (STMicroelectronics)

Member

• S. Akiyama (Fujitsu Labs. Ltd.)
• T. Amano (AIST)
• M. Fujita (Osaka Univ.)
• K. Kojima (Tohoku Univ.)
• S. Nishikawa (Mitsubishi Electric Corp.)
• K. Ohira (Toshiba Corp.)
• N. Ozaki (Wakayama Univ.)
• S. Saito (Univ. of Southampton)
• T. Shimizu (PETRA)
• K. Tanizawa (AIST)
• T. Tawara (NTT Basic Res. Labs.)
• L. Vivien (Univ. of Paris Sud)
• X. Wang (Peking Univ.)

Area 8 Advanced Material Synthesis and Crystal Growth Technology

Chair

T. Nagata (NIMS)

Vice-Chair

• A. Kikuchi (Sophia Univ.)
• W. W. Wu (NCTU)

Member

• T. Hoshi (NTT Device Tech. Labs.)
• Y. Hotta (Univ. of Hyogo)
• T. Iwai (Fujitsu Labs. Ltd.)
• T. Sadoh (Kyushu Univ.)
• H. Tatsuoka (Shizuoka Univ.)
• E. S. Tok (National Univ. of Singapore)
• T. Yokota (Nagoya Inst. of Tech.)

Area 9 Physics and Applications of Novel Functional Devices and Materials

Chair

T. Tanamoto (Toshiba Corp.)

Vice-Chair

• A. Oiwa (Osaka Univ.)
• P. W. Li (NCTU)

Member

• D. Austing (National Res. Council of Canada)
• P. E. Gaillardon (Univ. of Utah)
• H. S. Goan (National Taiwan Univ.)
• Y. Kaneko (Panasonic Corp.)
• A. Kimura (Hiroshima Univ.)
• T. Kodera (Tokyo Tech)
• G. Liang (NUS)
• K. Matsuda (Kyoto Univ.)
• R. Moriya (Univ. of Tokyo)
• T. Nakaoka (Sophia Univ.)
• T. Ota (NTT Basic Res. Labs.)
• R. M. Stevenson (Toshiba Res. Europe)
• K. Takase (NTT Basic Res. Labs.)
• K. Terabe (NIMS)
• H. Xu (Peking Univ.)

Area 10 Organic Materials Science, Device Physics, Applications and Printed Technologies

Chair

K. Fujita (Kyushu Univ.)

Vice-Chair

• T. Shimada (Hokkaido Univ.)
• C. Nijhuis (NUS)

Member

• H. Endoh (NEC Corp.)
• T. Hayashi (NTT Basic Res. Labs.)
• K. Ishida (Kobe Univ.)
• T. Kaji (Tokyo Univ. of Agri. & Tech.)
• H. Murata (JAIST)
• S. Nakajima (Japan Aviation Electronics Ind., Ltd.)
• M. Nakamura (NAIST)
• K. Shinbo (Niigata Univ.)
• M. Yoshida (AIST)

Area 11 Sensors and Materials for Biology, Chemistry and Medicine

Chair

T. Sakata (Univ. of Tokyo)

Vice-Chair

• T. Tanaka (Tohoku Univ.)
• C. S. Lai (Chang Gung Univ.)

Member

• H. M. Chen (NCTU)
• C. H. Liu (National Tsing Hua Univ.)
• S. Machida (Hitachi, Ltd.)
• M. Sasaki (Toyota Technological Inst.)
• H. Tanaka (Panasonic Corp.)
• R. Tero (Toyohashi Tech)
• T. Tokuda (NAIST)

Area 12 Spintronics Materials and Devices

Chair

Y. Suzuki (Osaka Univ.)

Vice-Chair

• J. Nitta (Tohoku Univ.)
• C. Y. You (Daegu Gyeongbuk Inst. of Sci. & Tech.)

Member

• T. Fukumura (Tohoku Univ.)
• M. Mizuguchi (Tohoku Univ.)
• Y. Nozaki (Keio Univ.)
• S. Ohya (Univ. of Tokyo)
• Y. Saito (Toshiba Corp.)
• H. Shimizu (Tokyo Univ. of Agri. & Tech.)
• C. Song (Tsinghua Univ.)
• A. Tulapurkar (IIT Bombay)
• T. Uemura (Hokkaido Univ.)
• H. Yang (NUS)

Area 13 Applications of Nanotubes, Nanowires, and Graphene and Related 2D Materials

Chair

Y. Ohno (Nagoya Univ.)

Vice-Chair

• G. Eda (NUS)
• K. Kawaguchi (Fujitsu Labs. Ltd.)

Member

• S. Akita (Osaka Pref. Univ.)
• M. Arita (Univ. of Tokyo)
• N. Fukata (NIMS)
• S. Hara (Hokkaido Univ.)
• T. Kawai (NEC Corp.)
• S. Lehmann (Lund Univ.)
• K. Maehashi (Tokyo Univ. of Agri. & Tech.)
• H. Miyazaki (Toshiba Corp.)
• K. Nagashio (Univ. of Tokyo)
• T. Takenobu (Waseda Univ.)
• T. Yanagida (Kyushu Univ.)
• G. Zhang (NTT Basic Res. Labs.)

Area 14 Power Devices and Materials

Chair

H. Umezawa (AIST)

Vice-Chair

• D. Hisamoto (Hitachi, Ltd.)
• C. F. Huang (National Tsing Hua Univ.)

Member

• G. Feng (EpiWorld International Co., Ltd.)
• H. Fujiwara (Toyota Motor Corp.)
• S. Harada (Nagoya Univ.)
• Y. Hijikata (Saitama Univ.)
• N. Iwamuro (Univ. of Tsukuba)
• H. Kim (Hongik Univ.)
• K. Kobayashi (Toshiba Corp.)
• R. Kosugi (AIST)
• T. Makino (AIST)
• S. Matsumoto (Kyushu Inst. of Tech.)
• T. Uesugi (Toyota Central R&D Labs. Inc.)

Area 15 Photovoltaic Materials and Devices

Chair

K. Ohdaira (JAIST)

Vice-Chair

M. Ikegami (Toin Univ. of Yokohama)

• L. S. Hong (National Taiwan Univ. of Sci. & Tech., Presently at Taipei Economic and Cultural Representative Office in Japan)
• T. Hoshii (Tokyo Tech)
• Y. Kurokawa (Nagoya Univ.)
• T. Negami (Panasonic Corp.)
• T. Okamoto (Kisarazu National College of Tech.)
• H. Suzuki (Univ. of Miyazaki)
• T. Taima (Kanazawa Univ.)