Invited Speakers

Area 1 Advanced LSI Processing & Materials Science

• Annealing Techniques for Low Temperature Junctions Design
  in a 3D VLSI Integration
  Claire Fenouillet-Béranger
  (CEA-LETI, France)
• High Performance Poly-Ge p- and n-MOSFETs Fabricated by Flash Lamp Annealing
  Koji Usuda
  (Toshiba, Japan)
• High Performance Electronics Based on Novel Two Dimensional Materials
  Yanqing Wu
  (Huazhong Univ. of Sci. and Tech, China)
• Engineering high-k/InGaAs Interface for Extremely Scaled Gate Stacks
  Daryoush Hassan Zadeh
  (NTT Device Technology Labs., Japan)

Area 2 Interconnect Technologies and 3D Integration / Sensor / MEMS Integration / Materials and Characterization

• 3D Interconnection of Single Micron Pitch by Hybrid Bonding Technology
  Jun Mizuno
  (Waseda Univ., Japan)
• Nanomechanical Characterization of Intermetallic Compounds in Miniaturized Interconnections
  Jenn-Ming Song
  (National Chung Hsing Univ., Taiwan)
• Ultra-Heat Resistant Interconnection for Wide Band Gap Semiconductors
  Katsuaki Suganuma
  (Osaka Univ., Japan)
• Functionalized Insulated Molecular Wires for Molecular Electronics
  Jun Terao
  (Kyoto Univ., Japan)

Area 3 CMOS Devices / Device Physics

• Novel Steep-Slope Switch Device with Improved Figures of Merit (FOM) through Mechanism Engineering for Ultra-Low-Power Applications
  Ru Huang
  (Peking Univ., China)
• High Performance 14nm SOI FinFET Technology
  Chung-Hsun Lin
  (IBM, USA)
• Impacts of RDF, RTN, and Shot Noise on Nanowire Transistor Performance Studied by Ensemble Monte Carlo / Molecular Dynamics Simulation
  Takanobu Watanabe
  (Waseda Univ., Japan)
• Ge CMOS Devices and Logic Circuits
  Heng Wu
  (Purdue Univ., USA)

Area 4 Advanced Memory Technology

• TMO-ReRAM Based Synaptic Device for Neuromorphic Computing
  Jinfeng Kang
  (Peking Univ, China)
• Conductive Bridge RAM (CBRAM): functionality, reliability and applications
  Gabriel Molas
  (CEA-LETI, France)
• Future prospects of data storage technologies: NAND flash memory and storage class memory hybrid system
  Ken Takeuchi
  (Chuo Univ., Japan)
• Harvesting the Physics of Spin and Magnetism for Low Power Logic
  Ian A. Young
  (Intel, USA)

Area 5 Advanced Circuits and Systems

• Manufacturing Technology of All-solid-state Thin-film Lithium Secondary Battery for Stand-alone MEMS/Sensor Applications
  Koukou Suu
  (ULVAC, Japan)
• VLSI Pulse-Coupled Phase Oscillator Networks and Their Emulator toward Spike-based Computation for Intelligent Processing
  Hakaru Tamukoh
  (Kyushu Inst. of Tech, Japan)
• Electronic Device from TFT Display for Applications on Biological Cells
  Agnès Tixier-Mita
  (Univ. of Tokyo, Japan)

Area 6 Compound Semiconductor Electron Devices & Related Technologies

• 25nm InP HEMT TMIC Process with 1 THz Amplifier Circuit Gain
  Xiaobing Mei
  (Northrop Grumman, USA)
• InGaAs Channel for Low Supply Voltage
  Yasuyuki Miyamoto
  (Tokyo Tech, Japan)
• GaN Metal-Oxide-Semiconductor HEMTs: Selected Physical Aspects and Characterization
  Milan Tapajna
  (IEEE SAS, Slovakia)
• THz Devisces Based on 2D Electron Systems
  Huili Xing
  (Cornell Univ., USA)

Area 7 Photonic Devices and Related Technologies

• Ge/SiGe Quantum Well Optical Modulator
  Papichaya Chaisakul
  (Univ. Paris Sud, France)
• Si and SiN Biophotonic Technology Platform, Applied to Biosensing, Spectroscopy, and Lens-Free Imaging
  Willem Van Roy
  (IMEC, Belgium)
• Photonic Structures in LEDs and Solar Cells
  Ulrich T. Schwarz
  (Univ. of Freiburg, Germany)
• High-Density Optical Interconnection Based on Silicon Photonics
  Yu Tanaka
  (PETRA, Japan)

Area 8 Advanced Material Synthesis and Crystal Growth Technology

• Self-assembled Functional Nanocomposites
  Ying-Hao Chu
  (NCTU, Taiwan)
• Scaling and Optimization of Ferroelectric Hafnium Oxide for Memory Applications and Beyond
  Johannes Müller
  (Fraunhofer IPMS-CNT, Germany)
• Ultrapure Diamond Growth by Chemical Vapor Deposition
  Tokuyuki Teraji
  (NIMS, Japan)
• Crystal Growth of GeSn-related Group-IV Thin Films for Integrating on Si Nanoelectronics Platform
  Shigeaki Zaima
  (Nagoya Univ., Japan)

Area 9 Physics and Applications of Novel Functional Devices and Materials

• Gigahertz Single-Electron Pump towards a Representation of the New Ampere
  Akira Fujiwara
  (NTT BRL, Japan)
• Ultraclean Carbon Nanotube Quantum Dots Coupled to Superconducting Impedance Matching Circuits
  Minkyung Jung
  (Univ. of Basel, Switzerland)
• Quantum Communications with Semiconductor Devices
  R. Mark Stevenson
  (Toshiba Research Europe, UK)
• Growth and Applications of Surface Oxides on Two-dimensional Transition Metal Dichalcogenides
  Mahito Yamamoto
  (NIMS, Japan)

Area 10 Organic Materials Science, Device Physics, and Applications

• Organic-Assisted Oriented Attachment of Silver Nanosheets
  Sanong Ekgasit
  (Chulalongkorn Univ., Thailand)
• Bandgap Science for Organic Solar Cells
  Masahiro Hiramoto
  (IMS, Japan)
• Controlling Light at the Nano-Scale via Molecular Tunnel Junctions
  Christian Albertus Nijhuis
  (NUS, Singapore)
• Development of New Soft Actuator using Piezoelectric Polymer Film
  Yoshiro Tajitsu
  (Kansai Univ., Japan)

Area 11 Sensors and Materials for Biology, Chemistry and Medicine

• Label-Free Integrated Plasmonic Biosensors for Cytokine Immunodiagnostics
  Katsuo Kurabayashi
  (Univ. of Michigan, USA)
• Molecular Analysis in Biological Samples by Actuator-Integrated Microfluidic Chips
  Yuzuru Takamura
  (JAIST, Japan)
• Acquiring Biological Information of Individuals Using Quantum Mechanics
  Masateru Taniguchi
  (Osaka Univ., Japan)
• Ultrasensitive Sensors Using Enhanced Surface Plasmon Resonances in Capped Metallic Nanostructures
  Kuang-Li Lee
  (Academia Sinica, Taiwan)

Area 12 Spintronics Materials and Devices

• Magneto-surface-plasmon Effect in Magnetic-/Non-magnetic Films
  Yoshito Ashizawa
  (Nihon Univ., Japan)
• Spintronics memory devices for ultralow-power and high-performance integrated circuits
  Shunsuke Fukami
  (Tohoku Univ., Japan)
• Graphene as a Versatile Spin Tunnel Barrier
  Enrique Cobas
  (Naval Research Lab., USA)
• Observation of the Quantum Anomalous Hall Effect in a Magnetic Topological Insulator Electrically Tuned Magnetic Order and Magnetoresistance in a Topo-logical Insulator
  Shuai-Hua Ji
  (Tsinghua Univ., China)

Area 13 Applications of Nanotubes, Nanowires, and Graphene

• Nanowire Growth as a Means for the Monolithic Integration of III-V Compound Semiconductors on Si
  Lutz Geelhaar
  (Paul Drude Inst., Germany)
• Transport Studies in Graphene and Black Phosphorus Field Effect Transistors
  Barbaros Özyilmaz
  (NUS, Singapore)
• Template-Assisted Selective Epitaxy (TASE) of III-V Nanoscale Devices for Heterogeneous Integration with Si
  Heike Riel
  (IBM Research Zurich, Switzerland)
• Atomically-thin Semiconductors
  Kazuhito Tsukagoshi
  (NIMS, Japan)

Area 14 Power Devices and Materials

• SiC Power Electronics - Current and Future Prospects of SiC Devices
  Peter Friedrichs
  (Infineon Technologies, Germany)
• Diamond Electronics for Power Devices and Sensing Applications
  Mutsuko Hatano
  (Tokyo Tech, Japan)
• Vertical Power Electronic Devices based on Bulk Gallium Nitride Substrates
  Isik C. Kizilyalli
  (Avogy, USA)
• Threshold-Voltage Instability in SiC MOSFETs
  Aivars J. Lelis
  (Army Research Lab., USA)

Area 15 Photovoltaic Materials and Devices

• Thin-Film Solar Cells Based on Liquid Phase Crystallized Silicon on Glass
  Daniel Amkreutz
  (Helmholtz-Zentrum Berlin, Germany)
• Low Temperature Solution Processable n-i-p Perovskite Solar Cell
  Wei-Fang Su
  (NTU, Taiwan)
• Development of CTS-Based Thin Film Solar Cells
  Hideaki Araki
  (National Institute of Technology, Nagaoka College, Japan)
• A New Concept of Solar Energy Harvesting Using Solar-Pumped Lasers Coupled with Monochromatic Photovoltaics
  Shintaro Mizuno
  (Toyota Central R&D Labs., Japan)
• Recent Results for Concentrator Photovoltaics in Japan
  Masafumi Yamaguchi
  (Toyota Tech. Inst., Japan)