Invited Speakers

Area 1 Advanced LSI Processing & Materials Science

• Band offsets at high-k oxide/semiconductor interfaces: From silicon to high-mobility channel materials
  V. V. Afanas'ev
  (KU Leuven, Belgium)
• Nickel Compound and Alloy Contacts to Nanoscale Si, Ge, and InGaAs Channels
  S. A. Dayeh
  (UCSD, USA)
• Heated Ion Implantation Technology for High Performance SOI FinFETs
  W. Mizubayashi
  (AIST, Japan)
• Negative Capacitance Transistors
  S. Salahuddin
  (UC Berkeley, USA)

Area 2 Advanced Interconnect and 3D Integration/ Materials and Characterization

• High-density Silicon Optical Interposer for Inter-chip Interconnect
  T. Nakamura
  (PETRA, Japan)
• Technology and Application Requirements of 2.5D/3D Field Programmable System-in-Package (SiP)
  A. Rahman
  (Altera, USA)
• A Possibility of Cross-Bar Wiring in Three-Dimensional Crystallographic Space
  H. M. Yamamoto
  (IMS, Japan)
• METAL-CNT CONTACTS
  C. Y. Yang
  (SCU, USA)

Area 3 CMOS Devices / Device Physics

• Tunnel-FET Transistors for 13nm Gate-Length and Beyond
  U.E. Avci
  (Intel, USA)
• Drive Current Performance of Inversion Mode Ge CMOS Transistors
  X. Gong
  (NUS, Singapore)
• Self-Heating Effects in Nanoscale Planar SOI and Fin FETs [Tentative]
  T. Takahashi
  (Keio Univ., Japan)
• A 16nm FinFET CMOS Technology for Mobile SoC and Computing Applications
  S.-Y. Wu
  (TSMC, Taiwan)

Area 4 Advanced Memory Technology

• Scaling of resistive switching devices
  D. Ielmini
  (POLIMI, Italy)
• Current Status of Cation-Based Resistive Memory
  M. N. Kozicki
  (ASU, USA)
• Trends on Advanced Semiconductor Memories
  A. Nitayama
  (Tohoku Univ., Japan)
• Switching current and thermal stability of perpendicular magnetic tunnel junction with MgO/CoFeB/Ta/CoFeB/MgO recording structure scaling down to 1X nm
  H. Sato
  (Tohoku Univ., Japan)

Area 5 Advanced Circuits and Systems

• Time Difference Amplifier and Its Application for TDC
  T. Nakura
  (Univ. of Tokyo, Japan)
• MEMS Neural Probes by CMOS Technology and Micromachining
  O. Paul
  (Univ. of Freiburg, Germany)
• Ultra-Wideband Technology for Short-Range Communications
  W. Rhee
  (Tsinghua Univ., China)

Area 6 Compound Semiconductor Electron Devices & Related Technologies

• High Performance Ⅲ-Ⅴ MOS Technologies
  M. J. W. Rodwell
  (UCSB, USA)
• Room-Temperature Resonant-Tunneling-Diode Terahertz Oscillator
  S. Suzuki
  (Tokyo Tech, Japan)
• Physical effects limiting performance and reliability of GaN High Electron Mobility Transistors
  E. Zanoni
  (Univ. of Padova, Italy)

Area 7 Photonic Devices and Related Technologies

• Hybrid Ⅲ-Ⅴ on Silicon Lasers
  B. Ben Bakir
  (CEA-Leti, France)
• Germanium Tin Light Emitters on Silicon
  E. Kasper
  (Univ. Stuttgart, Germany)
• Luxtera's Silicon Photonics Platform for Transceiver Manufacturing
  M. P. Mack
  (Luxtera, USA)
• Optical isolators and circulators on Si waveguide platforms
  T. Mizumoto
  (Tokyo Tech, Japan)

Area 8 Advanced Material Synthesis and Crystal Growth Technology

• Direct Growth of Uniform In-rich InGaN on Si: A New Basic Technology
  P. Aseev
  (ISOM, Spain)
• Epitaxial Growth, Doping, and Electron Transport of the Semiconducting Oxides In₂O₃, Ga₂O₃, and SnO₂
  O. Bierwagen
  (PDI, Germany)
• Growth, characterization, and functionalization of graphene and hexagonal boron nitride
  H. Hibino
  (NTT BRL, Japan)
• Metal-Induced Crystallization - Fundamentals and Applications
  Z. Wang
  (Max Planck Inst., Germany)

Area 9 Physics and Applications of Novel Functional Devices and Materials

• Band nesting in semiconducting transition metal dichalcognide
  G. Eda
  (NUS, Singapore)
• Quantum anomalous Hall effect in magnetically doped topological insulator
  K. He
  (Tsinghua Univ., China)
• Spin-valley physics in 2D crystals
  Y. Iwasa
  (Univ. of Tokyo, Japan)
• Angular momentum conversion from single photons to single electron spins in a lateral double quantum dot
  A. Oiwa
  (Univ. of Tokyo, Japan)

Area 10 Organic Materials Science, Device Physics, and Applications

• Organic Bioelectronics
  M. Berggren
  (Linköping Univ., Sweden)
• Exciplex Forming Co-Hosts as a Platform for OLEDs with Ultimate Efficiency
  J.-J. Kim
  (SNU, Korea)
• Polymeric Optical Devices with Printable and Flexible Electrode
  Y. Ohmori
  (Osaka Univ., Japan)
• Recent progress in polymer light emitting materials
  Takeshi Yamada
  (Sumitomo Chemical Co., Ltd., Japan)

Area 11 Sensors and Materials for Biology, Chemistry and Medicine

• Device Technologies for Cell and Tissue Analysis
  T. Fujii
  (Univ. of Tokyo, Japan)
• Silicon and reduced graphene oxide device concepts for electronically interfacing individual cells in culture
  S. Ingebrandt
  (UASK, Germany)
• Multi-channel recording system with UWB wireless data transmitter for Brain-Machine Interface
  T. Suzuki
  (NICT, Japan)
• Microfluidic biochip technology for biological cell research
  M.-H. Wu
  (CGU, Taiwan)

Area 12 Spintronics Materials and Devices

• On-Chip Nonreciprocal Photonic Devices Using Magneto-Optical Oxide Thin Films
  L. Bi
  (UESTC, China)
• Engineering materials for all-optical helicity-dependent magnetic switching
  M. Cinchetti
  (Univ. of Kaiserslautern, Germany)
• Magneto-reprogrammable semiconductor logic at room temperature
  J. Hong
  (Korea Univ., Korea)
• Progress of STT-MRAM Technology and application to low-power memory system
  H. Yoda
  (TOSHIBA, Japan)

Area 13 Applications of Nanotubes, Nanowires, and Graphene

• Advanced emission properties and lasing from (In,Ga)As nanowires
  G. Koblmueller
  (WSI, Germany)
• Carbon Nanotube Computer: Transforming Scientific Discoveries into Working Systems
  M. Shulaker
  (Stanford Univ., USA)
• Majorana fermions in semiconductor nanowires
  H. Xu
  (Lund Univ./Peking Univ., Sweden/China)

Area 14 Power Devices and Materials

• The Continuing Evolution of Silicon Carbide Power MOSFETs
  J. A. Cooper
  (Purdue Univ., USA)
• Accurate physical compact models of high-voltage/power semiconductor devices for efficient design of performance-optimized circuits and systems
  H. J. Mattausch
  (Hiroshima Univ., Japan)
• Commercialization of the high voltage Gallium Nitride HEMT
  P. Parikh
  (Transphorm, USA)
• Challenges to the silicon IGBT limit with PNM structure
  M. Sumitomo
  (DENSO, Japan)

Area 15 Photovoltaic Materials and Devices

• Design and Characterizations of Perovskite Solar Cells
  W.-G. Diau
  (NCTU, Taiwan)
• High Efficiency, Flexible, Thin Film Ⅲ-Ⅴ Solar Cell Technology
  G. S. Higashi
  (Alta Devices, USA)
• Cu₂ZnSnS₄ Solar Cells Fabricated by an Electrochemical Technique
  S. Ikeda
  (Osaka Univ., Japan)
• Development of Heterojunction Back Contact Si Solar Cells
  J. Nakamura
  (SHARP, Japan)
• FUTURE PROSPECTS OF ORGANIC AND HYBRID SOLAR CELLS FOR NEXT GENERATION PHOTOVOLTAICS
  H. Segawa
  (Univ. of Tokyo, Japan)